Characterization of Thin Film CdTe photovoltaic materials deposited by high plasma density magnetron sputtering
Abstract A new magnetron sputtering strategy is introduced that utilizes high plasma density (~5mA.cm-2) to avoid or reduce high temperature processing. The technique uses magnetrons of opposing magnetic polarity to create a “closed field” in which the plasma density is enhanced without the need for...
Ausführliche Beschreibung
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| Autor*in: |
Abbas, A. [verfasserIn] Bowers, J. W. [verfasserIn] Maniscalco, B. [verfasserIn] Moh, S. [verfasserIn] West, G. D. [verfasserIn] Rowley, P. N. [verfasserIn] Upadhyaya, H. M. [verfasserIn] Walls, M. J. [verfasserIn] |
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Englisch |
| Erschienen: |
2011 |
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Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 1323(2011), 1 vom: 01. Apr. |
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volume:1323 ; year:2011 ; number:1 ; day:01 ; month:04 |
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10.1557/opl.2011.835 |
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| 520 | |a Abstract A new magnetron sputtering strategy is introduced that utilizes high plasma density (~5mA.cm-2) to avoid or reduce high temperature processing. The technique uses magnetrons of opposing magnetic polarity to create a “closed field” in which the plasma density is enhanced without the need for high applied Voltages. A batch system has been used which employs a rotating vertical drum as the substrate carrier and a symmetrical array of linear magnetrons. The magnetrons are fitted with target materials for each of the thin films required in the photovoltaic (PV) stack including the CdTe absorber layer, CdS window layer, metal contact using the conventional superstrate configuration. The “closed field” sputtering technology allows scale up not only for larger batch system designs but it is also configurable for “in-line” or “roll to roll” formats for large scale production. The morphology of each of the layers is characterized using a variety of structural and optical techniques including Field Emission Gun SEM and X-ray diffraction (XRD). | ||
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| 700 | 1 | |a Upadhyaya, H. M. |e verfasserin |4 aut | |
| 700 | 1 | |a Walls, M. J. |e verfasserin |4 aut | |
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10.1557/opl.2011.835 doi (DE-627)SPR042769167 (DE-599)SPRopl.2011.835-e (SPR)opl.2011.835-e DE-627 ger DE-627 rakwb eng 670 ASE Abbas, A. verfasserin aut Characterization of Thin Film CdTe photovoltaic materials deposited by high plasma density magnetron sputtering 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A new magnetron sputtering strategy is introduced that utilizes high plasma density (~5mA.cm-2) to avoid or reduce high temperature processing. The technique uses magnetrons of opposing magnetic polarity to create a “closed field” in which the plasma density is enhanced without the need for high applied Voltages. A batch system has been used which employs a rotating vertical drum as the substrate carrier and a symmetrical array of linear magnetrons. The magnetrons are fitted with target materials for each of the thin films required in the photovoltaic (PV) stack including the CdTe absorber layer, CdS window layer, metal contact using the conventional superstrate configuration. The “closed field” sputtering technology allows scale up not only for larger batch system designs but it is also configurable for “in-line” or “roll to roll” formats for large scale production. The morphology of each of the layers is characterized using a variety of structural and optical techniques including Field Emission Gun SEM and X-ray diffraction (XRD). Bowers, J. W. verfasserin aut Maniscalco, B. verfasserin aut Moh, S. verfasserin aut West, G. D. verfasserin aut Rowley, P. N. verfasserin aut Upadhyaya, H. M. verfasserin aut Walls, M. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1323(2011), 1 vom: 01. Apr. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1323 year:2011 number:1 day:01 month:04 https://dx.doi.org/10.1557/opl.2011.835 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1323 2011 1 01 04 |
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10.1557/opl.2011.835 doi (DE-627)SPR042769167 (DE-599)SPRopl.2011.835-e (SPR)opl.2011.835-e DE-627 ger DE-627 rakwb eng 670 ASE Abbas, A. verfasserin aut Characterization of Thin Film CdTe photovoltaic materials deposited by high plasma density magnetron sputtering 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A new magnetron sputtering strategy is introduced that utilizes high plasma density (~5mA.cm-2) to avoid or reduce high temperature processing. The technique uses magnetrons of opposing magnetic polarity to create a “closed field” in which the plasma density is enhanced without the need for high applied Voltages. A batch system has been used which employs a rotating vertical drum as the substrate carrier and a symmetrical array of linear magnetrons. The magnetrons are fitted with target materials for each of the thin films required in the photovoltaic (PV) stack including the CdTe absorber layer, CdS window layer, metal contact using the conventional superstrate configuration. The “closed field” sputtering technology allows scale up not only for larger batch system designs but it is also configurable for “in-line” or “roll to roll” formats for large scale production. The morphology of each of the layers is characterized using a variety of structural and optical techniques including Field Emission Gun SEM and X-ray diffraction (XRD). Bowers, J. W. verfasserin aut Maniscalco, B. verfasserin aut Moh, S. verfasserin aut West, G. D. verfasserin aut Rowley, P. N. verfasserin aut Upadhyaya, H. M. verfasserin aut Walls, M. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1323(2011), 1 vom: 01. Apr. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1323 year:2011 number:1 day:01 month:04 https://dx.doi.org/10.1557/opl.2011.835 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1323 2011 1 01 04 |
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10.1557/opl.2011.835 doi (DE-627)SPR042769167 (DE-599)SPRopl.2011.835-e (SPR)opl.2011.835-e DE-627 ger DE-627 rakwb eng 670 ASE Abbas, A. verfasserin aut Characterization of Thin Film CdTe photovoltaic materials deposited by high plasma density magnetron sputtering 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A new magnetron sputtering strategy is introduced that utilizes high plasma density (~5mA.cm-2) to avoid or reduce high temperature processing. The technique uses magnetrons of opposing magnetic polarity to create a “closed field” in which the plasma density is enhanced without the need for high applied Voltages. A batch system has been used which employs a rotating vertical drum as the substrate carrier and a symmetrical array of linear magnetrons. The magnetrons are fitted with target materials for each of the thin films required in the photovoltaic (PV) stack including the CdTe absorber layer, CdS window layer, metal contact using the conventional superstrate configuration. The “closed field” sputtering technology allows scale up not only for larger batch system designs but it is also configurable for “in-line” or “roll to roll” formats for large scale production. The morphology of each of the layers is characterized using a variety of structural and optical techniques including Field Emission Gun SEM and X-ray diffraction (XRD). Bowers, J. W. verfasserin aut Maniscalco, B. verfasserin aut Moh, S. verfasserin aut West, G. D. verfasserin aut Rowley, P. N. verfasserin aut Upadhyaya, H. M. verfasserin aut Walls, M. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1323(2011), 1 vom: 01. Apr. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1323 year:2011 number:1 day:01 month:04 https://dx.doi.org/10.1557/opl.2011.835 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1323 2011 1 01 04 |
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10.1557/opl.2011.835 doi (DE-627)SPR042769167 (DE-599)SPRopl.2011.835-e (SPR)opl.2011.835-e DE-627 ger DE-627 rakwb eng 670 ASE Abbas, A. verfasserin aut Characterization of Thin Film CdTe photovoltaic materials deposited by high plasma density magnetron sputtering 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A new magnetron sputtering strategy is introduced that utilizes high plasma density (~5mA.cm-2) to avoid or reduce high temperature processing. The technique uses magnetrons of opposing magnetic polarity to create a “closed field” in which the plasma density is enhanced without the need for high applied Voltages. A batch system has been used which employs a rotating vertical drum as the substrate carrier and a symmetrical array of linear magnetrons. The magnetrons are fitted with target materials for each of the thin films required in the photovoltaic (PV) stack including the CdTe absorber layer, CdS window layer, metal contact using the conventional superstrate configuration. The “closed field” sputtering technology allows scale up not only for larger batch system designs but it is also configurable for “in-line” or “roll to roll” formats for large scale production. The morphology of each of the layers is characterized using a variety of structural and optical techniques including Field Emission Gun SEM and X-ray diffraction (XRD). Bowers, J. W. verfasserin aut Maniscalco, B. verfasserin aut Moh, S. verfasserin aut West, G. D. verfasserin aut Rowley, P. N. verfasserin aut Upadhyaya, H. M. verfasserin aut Walls, M. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1323(2011), 1 vom: 01. Apr. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1323 year:2011 number:1 day:01 month:04 https://dx.doi.org/10.1557/opl.2011.835 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1323 2011 1 01 04 |
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Abstract A new magnetron sputtering strategy is introduced that utilizes high plasma density (~5mA.cm-2) to avoid or reduce high temperature processing. The technique uses magnetrons of opposing magnetic polarity to create a “closed field” in which the plasma density is enhanced without the need for high applied Voltages. A batch system has been used which employs a rotating vertical drum as the substrate carrier and a symmetrical array of linear magnetrons. The magnetrons are fitted with target materials for each of the thin films required in the photovoltaic (PV) stack including the CdTe absorber layer, CdS window layer, metal contact using the conventional superstrate configuration. The “closed field” sputtering technology allows scale up not only for larger batch system designs but it is also configurable for “in-line” or “roll to roll” formats for large scale production. The morphology of each of the layers is characterized using a variety of structural and optical techniques including Field Emission Gun SEM and X-ray diffraction (XRD). |
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Abstract A new magnetron sputtering strategy is introduced that utilizes high plasma density (~5mA.cm-2) to avoid or reduce high temperature processing. The technique uses magnetrons of opposing magnetic polarity to create a “closed field” in which the plasma density is enhanced without the need for high applied Voltages. A batch system has been used which employs a rotating vertical drum as the substrate carrier and a symmetrical array of linear magnetrons. The magnetrons are fitted with target materials for each of the thin films required in the photovoltaic (PV) stack including the CdTe absorber layer, CdS window layer, metal contact using the conventional superstrate configuration. The “closed field” sputtering technology allows scale up not only for larger batch system designs but it is also configurable for “in-line” or “roll to roll” formats for large scale production. The morphology of each of the layers is characterized using a variety of structural and optical techniques including Field Emission Gun SEM and X-ray diffraction (XRD). |
| abstract_unstemmed |
Abstract A new magnetron sputtering strategy is introduced that utilizes high plasma density (~5mA.cm-2) to avoid or reduce high temperature processing. The technique uses magnetrons of opposing magnetic polarity to create a “closed field” in which the plasma density is enhanced without the need for high applied Voltages. A batch system has been used which employs a rotating vertical drum as the substrate carrier and a symmetrical array of linear magnetrons. The magnetrons are fitted with target materials for each of the thin films required in the photovoltaic (PV) stack including the CdTe absorber layer, CdS window layer, metal contact using the conventional superstrate configuration. The “closed field” sputtering technology allows scale up not only for larger batch system designs but it is also configurable for “in-line” or “roll to roll” formats for large scale production. The morphology of each of the layers is characterized using a variety of structural and optical techniques including Field Emission Gun SEM and X-ray diffraction (XRD). |
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Characterization of Thin Film CdTe photovoltaic materials deposited by high plasma density magnetron sputtering |
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https://dx.doi.org/10.1557/opl.2011.835 |
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Bowers, J. W. Maniscalco, B. Moh, S. West, G. D. Rowley, P. N. Upadhyaya, H. M. Walls, M. J. |
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Bowers, J. W. Maniscalco, B. Moh, S. West, G. D. Rowley, P. N. Upadhyaya, H. M. Walls, M. J. |
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10.1557/opl.2011.835 |
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