Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD
Abstract $ CO_{2} $ laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Fukuda, Nobuhiro [verfasserIn] Miyachi, Kenji [verfasserIn] Tanaka, Hirofumi [verfasserIn] Igarashi, Takashi [verfasserIn] Yamamoto, Sadaaki [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1986 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 70(1986), 1 vom: Dez., Seite 25-30 |
|---|---|
| Übergeordnetes Werk: |
volume:70 ; year:1986 ; number:1 ; month:12 ; pages:25-30 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-70-25 |
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SPR042784042 |
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| 520 | |a Abstract $ CO_{2} $ laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone. | ||
| 700 | 1 | |a Miyachi, Kenji |e verfasserin |4 aut | |
| 700 | 1 | |a Tanaka, Hirofumi |e verfasserin |4 aut | |
| 700 | 1 | |a Igarashi, Takashi |e verfasserin |4 aut | |
| 700 | 1 | |a Yamamoto, Sadaaki |e verfasserin |4 aut | |
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10.1557/PROC-70-25 doi (DE-627)SPR042784042 (DE-599)SPRPROC-70-25-e (SPR)PROC-70-25-e DE-627 ger DE-627 rakwb eng 670 ASE Fukuda, Nobuhiro verfasserin aut Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD 1986 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ CO_{2} $ laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone. Miyachi, Kenji verfasserin aut Tanaka, Hirofumi verfasserin aut Igarashi, Takashi verfasserin aut Yamamoto, Sadaaki verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 70(1986), 1 vom: Dez., Seite 25-30 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:70 year:1986 number:1 month:12 pages:25-30 https://dx.doi.org/10.1557/PROC-70-25 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 70 1986 1 12 25-30 |
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10.1557/PROC-70-25 doi (DE-627)SPR042784042 (DE-599)SPRPROC-70-25-e (SPR)PROC-70-25-e DE-627 ger DE-627 rakwb eng 670 ASE Fukuda, Nobuhiro verfasserin aut Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD 1986 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ CO_{2} $ laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone. Miyachi, Kenji verfasserin aut Tanaka, Hirofumi verfasserin aut Igarashi, Takashi verfasserin aut Yamamoto, Sadaaki verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 70(1986), 1 vom: Dez., Seite 25-30 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:70 year:1986 number:1 month:12 pages:25-30 https://dx.doi.org/10.1557/PROC-70-25 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 70 1986 1 12 25-30 |
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10.1557/PROC-70-25 doi (DE-627)SPR042784042 (DE-599)SPRPROC-70-25-e (SPR)PROC-70-25-e DE-627 ger DE-627 rakwb eng 670 ASE Fukuda, Nobuhiro verfasserin aut Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD 1986 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ CO_{2} $ laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone. Miyachi, Kenji verfasserin aut Tanaka, Hirofumi verfasserin aut Igarashi, Takashi verfasserin aut Yamamoto, Sadaaki verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 70(1986), 1 vom: Dez., Seite 25-30 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:70 year:1986 number:1 month:12 pages:25-30 https://dx.doi.org/10.1557/PROC-70-25 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 70 1986 1 12 25-30 |
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10.1557/PROC-70-25 doi (DE-627)SPR042784042 (DE-599)SPRPROC-70-25-e (SPR)PROC-70-25-e DE-627 ger DE-627 rakwb eng 670 ASE Fukuda, Nobuhiro verfasserin aut Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD 1986 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ CO_{2} $ laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone. Miyachi, Kenji verfasserin aut Tanaka, Hirofumi verfasserin aut Igarashi, Takashi verfasserin aut Yamamoto, Sadaaki verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 70(1986), 1 vom: Dez., Seite 25-30 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:70 year:1986 number:1 month:12 pages:25-30 https://dx.doi.org/10.1557/PROC-70-25 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 70 1986 1 12 25-30 |
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10.1557/PROC-70-25 doi (DE-627)SPR042784042 (DE-599)SPRPROC-70-25-e (SPR)PROC-70-25-e DE-627 ger DE-627 rakwb eng 670 ASE Fukuda, Nobuhiro verfasserin aut Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD 1986 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ CO_{2} $ laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone. Miyachi, Kenji verfasserin aut Tanaka, Hirofumi verfasserin aut Igarashi, Takashi verfasserin aut Yamamoto, Sadaaki verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 70(1986), 1 vom: Dez., Seite 25-30 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:70 year:1986 number:1 month:12 pages:25-30 https://dx.doi.org/10.1557/PROC-70-25 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 70 1986 1 12 25-30 |
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Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD |
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Abstract $ CO_{2} $ laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone. |
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Abstract $ CO_{2} $ laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone. |
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Abstract $ CO_{2} $ laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone. |
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Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD |
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