In-Situ Fluorescence Strain Sensing of the Stress in Interconnects
Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film,...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Wen, Q. [verfasserIn] Ma, Q. [verfasserIn] Clarke, D. R. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1994 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 356(1994), 1 vom: Dez., Seite 591-596 |
|---|---|
| Übergeordnetes Werk: |
volume:356 ; year:1994 ; number:1 ; month:12 ; pages:591-596 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-356-591 |
|---|
| Katalog-ID: |
SPR042816483 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR042816483 | ||
| 003 | DE-627 | ||
| 005 | 20220112052112.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 210122s1994 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-356-591 |2 doi | |
| 035 | |a (DE-627)SPR042816483 | ||
| 035 | |a (DE-599)SPRPROC-356-591-e | ||
| 035 | |a (SPR)PROC-356-591-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Wen, Q. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a In-Situ Fluorescence Strain Sensing of the Stress in Interconnects |
| 264 | 1 | |c 1994 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects. | ||
| 700 | 1 | |a Ma, Q. |e verfasserin |4 aut | |
| 700 | 1 | |a Clarke, D. R. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 356(1994), 1 vom: Dez., Seite 591-596 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:356 |g year:1994 |g number:1 |g month:12 |g pages:591-596 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-356-591 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 356 |j 1994 |e 1 |c 12 |h 591-596 | ||
| author_variant |
q w qw q m qm d r c dr drc |
|---|---|
| matchkey_str |
article:19464274:1994----::niuloecnetanesnotetes |
| hierarchy_sort_str |
1994 |
| publishDate |
1994 |
| allfields |
10.1557/PROC-356-591 doi (DE-627)SPR042816483 (DE-599)SPRPROC-356-591-e (SPR)PROC-356-591-e DE-627 ger DE-627 rakwb eng 670 ASE Wen, Q. verfasserin aut In-Situ Fluorescence Strain Sensing of the Stress in Interconnects 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects. Ma, Q. verfasserin aut Clarke, D. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 356(1994), 1 vom: Dez., Seite 591-596 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:356 year:1994 number:1 month:12 pages:591-596 https://dx.doi.org/10.1557/PROC-356-591 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 356 1994 1 12 591-596 |
| spelling |
10.1557/PROC-356-591 doi (DE-627)SPR042816483 (DE-599)SPRPROC-356-591-e (SPR)PROC-356-591-e DE-627 ger DE-627 rakwb eng 670 ASE Wen, Q. verfasserin aut In-Situ Fluorescence Strain Sensing of the Stress in Interconnects 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects. Ma, Q. verfasserin aut Clarke, D. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 356(1994), 1 vom: Dez., Seite 591-596 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:356 year:1994 number:1 month:12 pages:591-596 https://dx.doi.org/10.1557/PROC-356-591 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 356 1994 1 12 591-596 |
| allfields_unstemmed |
10.1557/PROC-356-591 doi (DE-627)SPR042816483 (DE-599)SPRPROC-356-591-e (SPR)PROC-356-591-e DE-627 ger DE-627 rakwb eng 670 ASE Wen, Q. verfasserin aut In-Situ Fluorescence Strain Sensing of the Stress in Interconnects 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects. Ma, Q. verfasserin aut Clarke, D. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 356(1994), 1 vom: Dez., Seite 591-596 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:356 year:1994 number:1 month:12 pages:591-596 https://dx.doi.org/10.1557/PROC-356-591 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 356 1994 1 12 591-596 |
| allfieldsGer |
10.1557/PROC-356-591 doi (DE-627)SPR042816483 (DE-599)SPRPROC-356-591-e (SPR)PROC-356-591-e DE-627 ger DE-627 rakwb eng 670 ASE Wen, Q. verfasserin aut In-Situ Fluorescence Strain Sensing of the Stress in Interconnects 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects. Ma, Q. verfasserin aut Clarke, D. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 356(1994), 1 vom: Dez., Seite 591-596 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:356 year:1994 number:1 month:12 pages:591-596 https://dx.doi.org/10.1557/PROC-356-591 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 356 1994 1 12 591-596 |
| allfieldsSound |
10.1557/PROC-356-591 doi (DE-627)SPR042816483 (DE-599)SPRPROC-356-591-e (SPR)PROC-356-591-e DE-627 ger DE-627 rakwb eng 670 ASE Wen, Q. verfasserin aut In-Situ Fluorescence Strain Sensing of the Stress in Interconnects 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects. Ma, Q. verfasserin aut Clarke, D. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 356(1994), 1 vom: Dez., Seite 591-596 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:356 year:1994 number:1 month:12 pages:591-596 https://dx.doi.org/10.1557/PROC-356-591 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 356 1994 1 12 591-596 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 356(1994), 1 vom: Dez., Seite 591-596 volume:356 year:1994 number:1 month:12 pages:591-596 |
| sourceStr |
Enthalten in MRS online proceedings library 356(1994), 1 vom: Dez., Seite 591-596 volume:356 year:1994 number:1 month:12 pages:591-596 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Wen, Q. @@aut@@ Ma, Q. @@aut@@ Clarke, D. R. @@aut@@ |
| publishDateDaySort_date |
1994-12-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR042816483 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042816483</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052112.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210122s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-356-591</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042816483</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-356-591-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-356-591-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Wen, Q.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">In-Situ Fluorescence Strain Sensing of the Stress in Interconnects</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Q.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Clarke, D. R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">356(1994), 1 vom: Dez., Seite 591-596</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:356</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:591-596</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-356-591</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">356</subfield><subfield code="j">1994</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">591-596</subfield></datafield></record></collection>
|
| author |
Wen, Q. |
| spellingShingle |
Wen, Q. ddc 670 In-Situ Fluorescence Strain Sensing of the Stress in Interconnects |
| authorStr |
Wen, Q. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE In-Situ Fluorescence Strain Sensing of the Stress in Interconnects |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
In-Situ Fluorescence Strain Sensing of the Stress in Interconnects |
| ctrlnum |
(DE-627)SPR042816483 (DE-599)SPRPROC-356-591-e (SPR)PROC-356-591-e |
| title_full |
In-Situ Fluorescence Strain Sensing of the Stress in Interconnects |
| author_sort |
Wen, Q. |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1994 |
| contenttype_str_mv |
txt |
| container_start_page |
591 |
| author_browse |
Wen, Q. Ma, Q. Clarke, D. R. |
| container_volume |
356 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Wen, Q. |
| doi_str_mv |
10.1557/PROC-356-591 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
in-situ fluorescence strain sensing of the stress in interconnects |
| title_auth |
In-Situ Fluorescence Strain Sensing of the Stress in Interconnects |
| abstract |
Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects. |
| abstractGer |
Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects. |
| abstract_unstemmed |
Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
In-Situ Fluorescence Strain Sensing of the Stress in Interconnects |
| url |
https://dx.doi.org/10.1557/PROC-356-591 |
| remote_bool |
true |
| author2 |
Ma, Q. Clarke, D. R. |
| author2Str |
Ma, Q. Clarke, D. R. |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-356-591 |
| up_date |
2024-07-03T14:59:07.109Z |
| _version_ |
1803570377772761088 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042816483</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052112.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210122s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-356-591</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042816483</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-356-591-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-356-591-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Wen, Q.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">In-Situ Fluorescence Strain Sensing of the Stress in Interconnects</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract An optical fluorescence method is introduced for determining the localized stresses in passivated aluminum lines on sapphire substrates containing a thin epitaxial ruby film at the AI/$ AI_{2} %$ O_{3} $ interface. The method is based on the piezo-spectroscopic properties of the ruby film, which acts as an in situ sensor. By focusing a laser beam through the sapphire substrate and onto the bottom of an aluminum line, the fluorescence from the ruby sensor can be excited and collected through an optical microscope. The frequency shift of the fluorescence lines is proportional to the stress in the aluminum line. To illustrate our observations two sets of measurements are presented: the spatial variation perpendicular to an interconnect line; and the temperature dependence on heating upto the deposition temperature of the SiN used to passivate the interconnects.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Q.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Clarke, D. R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">356(1994), 1 vom: Dez., Seite 591-596</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:356</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:591-596</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-356-591</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">356</subfield><subfield code="j">1994</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">591-596</subfield></datafield></record></collection>
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