Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques
Abstract Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the h...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kanicki, J. [verfasserIn] |
|---|
| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1988 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 118(1988), 1 vom: Dez. |
|---|---|
| Übergeordnetes Werk: |
volume:118 ; year:1988 ; number:1 ; month:12 |
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| DOI / URN: |
10.1557/PROC-118-671 |
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| 520 | |a Abstract Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the hydrogen can influence the physical, chemical, mechanical, and magnetic properties of the N-rich film. However, for a given film stoichiometry there is no clear evidence for the hydrogen content influence on optical and electrical properties; the film stoichiometry provides the main influence on these properties. The best quality gate dielectric silicon nitride is N-rich film deposited at temperatures exceeding 350°C. | ||
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10.1557/PROC-118-671 doi (DE-627)SPR04288148X (DE-599)SPRPROC-118-671-e (SPR)PROC-118-671-e DE-627 ger DE-627 rakwb eng 670 ASE Kanicki, J. verfasserin aut Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques 1988 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the hydrogen can influence the physical, chemical, mechanical, and magnetic properties of the N-rich film. However, for a given film stoichiometry there is no clear evidence for the hydrogen content influence on optical and electrical properties; the film stoichiometry provides the main influence on these properties. The best quality gate dielectric silicon nitride is N-rich film deposited at temperatures exceeding 350°C. Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 118(1988), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:118 year:1988 number:1 month:12 https://dx.doi.org/10.1557/PROC-118-671 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 118 1988 1 12 |
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10.1557/PROC-118-671 doi (DE-627)SPR04288148X (DE-599)SPRPROC-118-671-e (SPR)PROC-118-671-e DE-627 ger DE-627 rakwb eng 670 ASE Kanicki, J. verfasserin aut Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques 1988 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the hydrogen can influence the physical, chemical, mechanical, and magnetic properties of the N-rich film. However, for a given film stoichiometry there is no clear evidence for the hydrogen content influence on optical and electrical properties; the film stoichiometry provides the main influence on these properties. The best quality gate dielectric silicon nitride is N-rich film deposited at temperatures exceeding 350°C. Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 118(1988), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:118 year:1988 number:1 month:12 https://dx.doi.org/10.1557/PROC-118-671 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 118 1988 1 12 |
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10.1557/PROC-118-671 doi (DE-627)SPR04288148X (DE-599)SPRPROC-118-671-e (SPR)PROC-118-671-e DE-627 ger DE-627 rakwb eng 670 ASE Kanicki, J. verfasserin aut Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques 1988 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the hydrogen can influence the physical, chemical, mechanical, and magnetic properties of the N-rich film. However, for a given film stoichiometry there is no clear evidence for the hydrogen content influence on optical and electrical properties; the film stoichiometry provides the main influence on these properties. The best quality gate dielectric silicon nitride is N-rich film deposited at temperatures exceeding 350°C. Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 118(1988), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:118 year:1988 number:1 month:12 https://dx.doi.org/10.1557/PROC-118-671 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 118 1988 1 12 |
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10.1557/PROC-118-671 doi (DE-627)SPR04288148X (DE-599)SPRPROC-118-671-e (SPR)PROC-118-671-e DE-627 ger DE-627 rakwb eng 670 ASE Kanicki, J. verfasserin aut Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques 1988 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the hydrogen can influence the physical, chemical, mechanical, and magnetic properties of the N-rich film. However, for a given film stoichiometry there is no clear evidence for the hydrogen content influence on optical and electrical properties; the film stoichiometry provides the main influence on these properties. The best quality gate dielectric silicon nitride is N-rich film deposited at temperatures exceeding 350°C. Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 118(1988), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:118 year:1988 number:1 month:12 https://dx.doi.org/10.1557/PROC-118-671 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 118 1988 1 12 |
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10.1557/PROC-118-671 doi (DE-627)SPR04288148X (DE-599)SPRPROC-118-671-e (SPR)PROC-118-671-e DE-627 ger DE-627 rakwb eng 670 ASE Kanicki, J. verfasserin aut Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques 1988 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the hydrogen can influence the physical, chemical, mechanical, and magnetic properties of the N-rich film. However, for a given film stoichiometry there is no clear evidence for the hydrogen content influence on optical and electrical properties; the film stoichiometry provides the main influence on these properties. The best quality gate dielectric silicon nitride is N-rich film deposited at temperatures exceeding 350°C. Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 118(1988), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:118 year:1988 number:1 month:12 https://dx.doi.org/10.1557/PROC-118-671 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 118 1988 1 12 |
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role of hydrogen in silicon nitride films prepared by various deposition techniques |
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Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques |
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Abstract Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the hydrogen can influence the physical, chemical, mechanical, and magnetic properties of the N-rich film. However, for a given film stoichiometry there is no clear evidence for the hydrogen content influence on optical and electrical properties; the film stoichiometry provides the main influence on these properties. The best quality gate dielectric silicon nitride is N-rich film deposited at temperatures exceeding 350°C. |
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Abstract Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the hydrogen can influence the physical, chemical, mechanical, and magnetic properties of the N-rich film. However, for a given film stoichiometry there is no clear evidence for the hydrogen content influence on optical and electrical properties; the film stoichiometry provides the main influence on these properties. The best quality gate dielectric silicon nitride is N-rich film deposited at temperatures exceeding 350°C. |
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Abstract Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the hydrogen can influence the physical, chemical, mechanical, and magnetic properties of the N-rich film. However, for a given film stoichiometry there is no clear evidence for the hydrogen content influence on optical and electrical properties; the film stoichiometry provides the main influence on these properties. The best quality gate dielectric silicon nitride is N-rich film deposited at temperatures exceeding 350°C. |
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