Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD
Abstract Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the sampl...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ivashchenko, V. I. [verfasserIn] Vasin, A. V. [verfasserIn] Ivashchenko, L. A. [verfasserIn] Skrynskyy, P. L. [verfasserIn] |
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2008 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 1153(2008), 1 vom: Dez. |
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volume:1153 ; year:2008 ; number:1 ; month:12 |
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| DOI / URN: |
10.1557/PROC-1153-A16-01 |
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SPR042884918 |
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| 520 | |a Abstract Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL. | ||
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10.1557/PROC-1153-A16-01 doi (DE-627)SPR042884918 (DE-599)SPRPROC-1153-A16-01-e (SPR)PROC-1153-A16-01-e DE-627 ger DE-627 rakwb eng 670 ASE Ivashchenko, V. I. verfasserin aut Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL. Vasin, A. V. verfasserin aut Ivashchenko, L. A. verfasserin aut Skrynskyy, P. L. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1153(2008), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1153 year:2008 number:1 month:12 https://dx.doi.org/10.1557/PROC-1153-A16-01 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1153 2008 1 12 |
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10.1557/PROC-1153-A16-01 doi (DE-627)SPR042884918 (DE-599)SPRPROC-1153-A16-01-e (SPR)PROC-1153-A16-01-e DE-627 ger DE-627 rakwb eng 670 ASE Ivashchenko, V. I. verfasserin aut Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL. Vasin, A. V. verfasserin aut Ivashchenko, L. A. verfasserin aut Skrynskyy, P. L. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1153(2008), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1153 year:2008 number:1 month:12 https://dx.doi.org/10.1557/PROC-1153-A16-01 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1153 2008 1 12 |
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10.1557/PROC-1153-A16-01 doi (DE-627)SPR042884918 (DE-599)SPRPROC-1153-A16-01-e (SPR)PROC-1153-A16-01-e DE-627 ger DE-627 rakwb eng 670 ASE Ivashchenko, V. I. verfasserin aut Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL. Vasin, A. V. verfasserin aut Ivashchenko, L. A. verfasserin aut Skrynskyy, P. L. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1153(2008), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1153 year:2008 number:1 month:12 https://dx.doi.org/10.1557/PROC-1153-A16-01 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1153 2008 1 12 |
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10.1557/PROC-1153-A16-01 doi (DE-627)SPR042884918 (DE-599)SPRPROC-1153-A16-01-e (SPR)PROC-1153-A16-01-e DE-627 ger DE-627 rakwb eng 670 ASE Ivashchenko, V. I. verfasserin aut Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL. Vasin, A. V. verfasserin aut Ivashchenko, L. A. verfasserin aut Skrynskyy, P. L. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1153(2008), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1153 year:2008 number:1 month:12 https://dx.doi.org/10.1557/PROC-1153-A16-01 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1153 2008 1 12 |
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10.1557/PROC-1153-A16-01 doi (DE-627)SPR042884918 (DE-599)SPRPROC-1153-A16-01-e (SPR)PROC-1153-A16-01-e DE-627 ger DE-627 rakwb eng 670 ASE Ivashchenko, V. I. verfasserin aut Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL. Vasin, A. V. verfasserin aut Ivashchenko, L. A. verfasserin aut Skrynskyy, P. L. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1153(2008), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1153 year:2008 number:1 month:12 https://dx.doi.org/10.1557/PROC-1153-A16-01 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1153 2008 1 12 |
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Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD |
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Abstract Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL. |
| abstractGer |
Abstract Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL. |
| abstract_unstemmed |
Abstract Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL. |
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Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD |
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Vasin, A. V. Ivashchenko, L. A. Skrynskyy, P. L. |
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