Characterization of europium implanted $ LiNbO_{3} $
Abstract $ LiNbO_{3} $ single crystals were implanted at room temperature with $ Eu^{+} $ ions at 70 keV with fluence ranging from 0.5 to 5 × $ 10^{16} $ ions · $ cm^{−2} $. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation sta...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Moretti, P. [verfasserIn] Canut, B. [verfasserIn] Ramos, S. M. M. [verfasserIn] Brenier, R. [verfasserIn] Thévenard, P. [verfasserIn] Poker, D. [verfasserIn] Da Cunha, J. B. M. [verfasserIn] Amaral, L. [verfasserIn] Vasquez, A. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1993 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of materials research - Berlin : Springer, 1986, 8(1993), 10 vom: 01. Okt., Seite 2679-2685 |
|---|---|
| Übergeordnetes Werk: |
volume:8 ; year:1993 ; number:10 ; day:01 ; month:10 ; pages:2679-2685 |
| Links: |
|---|
| DOI / URN: |
10.1557/JMR.1993.2679 |
|---|
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SPR042898099 |
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| 520 | |a Abstract $ LiNbO_{3} $ single crystals were implanted at room temperature with $ Eu^{+} $ ions at 70 keV with fluence ranging from 0.5 to 5 × $ 10^{16} $ ions · $ cm^{−2} $. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in $ Eu^{2+} $ and $ Eu^{3+} $ states, and the $ Nb^{5+} $ ions are driven to lower charge states. | ||
| 700 | 1 | |a Canut, B. |e verfasserin |4 aut | |
| 700 | 1 | |a Ramos, S. M. M. |e verfasserin |4 aut | |
| 700 | 1 | |a Brenier, R. |e verfasserin |4 aut | |
| 700 | 1 | |a Thévenard, P. |e verfasserin |4 aut | |
| 700 | 1 | |a Poker, D. |e verfasserin |4 aut | |
| 700 | 1 | |a Da Cunha, J. B. M. |e verfasserin |4 aut | |
| 700 | 1 | |a Amaral, L. |e verfasserin |4 aut | |
| 700 | 1 | |a Vasquez, A. |e verfasserin |4 aut | |
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10.1557/JMR.1993.2679 doi (DE-627)SPR042898099 (DE-599)SPRJMR.1993.2679-e (SPR)JMR.1993.2679-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Moretti, P. verfasserin aut Characterization of europium implanted $ LiNbO_{3} $ 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ LiNbO_{3} $ single crystals were implanted at room temperature with $ Eu^{+} $ ions at 70 keV with fluence ranging from 0.5 to 5 × $ 10^{16} $ ions · $ cm^{−2} $. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in $ Eu^{2+} $ and $ Eu^{3+} $ states, and the $ Nb^{5+} $ ions are driven to lower charge states. Canut, B. verfasserin aut Ramos, S. M. M. verfasserin aut Brenier, R. verfasserin aut Thévenard, P. verfasserin aut Poker, D. verfasserin aut Da Cunha, J. B. M. verfasserin aut Amaral, L. verfasserin aut Vasquez, A. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 8(1993), 10 vom: 01. Okt., Seite 2679-2685 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:8 year:1993 number:10 day:01 month:10 pages:2679-2685 https://dx.doi.org/10.1557/JMR.1993.2679 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 8 1993 10 01 10 2679-2685 |
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10.1557/JMR.1993.2679 doi (DE-627)SPR042898099 (DE-599)SPRJMR.1993.2679-e (SPR)JMR.1993.2679-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Moretti, P. verfasserin aut Characterization of europium implanted $ LiNbO_{3} $ 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ LiNbO_{3} $ single crystals were implanted at room temperature with $ Eu^{+} $ ions at 70 keV with fluence ranging from 0.5 to 5 × $ 10^{16} $ ions · $ cm^{−2} $. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in $ Eu^{2+} $ and $ Eu^{3+} $ states, and the $ Nb^{5+} $ ions are driven to lower charge states. Canut, B. verfasserin aut Ramos, S. M. M. verfasserin aut Brenier, R. verfasserin aut Thévenard, P. verfasserin aut Poker, D. verfasserin aut Da Cunha, J. B. M. verfasserin aut Amaral, L. verfasserin aut Vasquez, A. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 8(1993), 10 vom: 01. Okt., Seite 2679-2685 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:8 year:1993 number:10 day:01 month:10 pages:2679-2685 https://dx.doi.org/10.1557/JMR.1993.2679 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 8 1993 10 01 10 2679-2685 |
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10.1557/JMR.1993.2679 doi (DE-627)SPR042898099 (DE-599)SPRJMR.1993.2679-e (SPR)JMR.1993.2679-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Moretti, P. verfasserin aut Characterization of europium implanted $ LiNbO_{3} $ 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ LiNbO_{3} $ single crystals were implanted at room temperature with $ Eu^{+} $ ions at 70 keV with fluence ranging from 0.5 to 5 × $ 10^{16} $ ions · $ cm^{−2} $. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in $ Eu^{2+} $ and $ Eu^{3+} $ states, and the $ Nb^{5+} $ ions are driven to lower charge states. Canut, B. verfasserin aut Ramos, S. M. M. verfasserin aut Brenier, R. verfasserin aut Thévenard, P. verfasserin aut Poker, D. verfasserin aut Da Cunha, J. B. M. verfasserin aut Amaral, L. verfasserin aut Vasquez, A. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 8(1993), 10 vom: 01. Okt., Seite 2679-2685 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:8 year:1993 number:10 day:01 month:10 pages:2679-2685 https://dx.doi.org/10.1557/JMR.1993.2679 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 8 1993 10 01 10 2679-2685 |
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10.1557/JMR.1993.2679 doi (DE-627)SPR042898099 (DE-599)SPRJMR.1993.2679-e (SPR)JMR.1993.2679-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Moretti, P. verfasserin aut Characterization of europium implanted $ LiNbO_{3} $ 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ LiNbO_{3} $ single crystals were implanted at room temperature with $ Eu^{+} $ ions at 70 keV with fluence ranging from 0.5 to 5 × $ 10^{16} $ ions · $ cm^{−2} $. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in $ Eu^{2+} $ and $ Eu^{3+} $ states, and the $ Nb^{5+} $ ions are driven to lower charge states. Canut, B. verfasserin aut Ramos, S. M. M. verfasserin aut Brenier, R. verfasserin aut Thévenard, P. verfasserin aut Poker, D. verfasserin aut Da Cunha, J. B. M. verfasserin aut Amaral, L. verfasserin aut Vasquez, A. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 8(1993), 10 vom: 01. Okt., Seite 2679-2685 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:8 year:1993 number:10 day:01 month:10 pages:2679-2685 https://dx.doi.org/10.1557/JMR.1993.2679 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 8 1993 10 01 10 2679-2685 |
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10.1557/JMR.1993.2679 doi (DE-627)SPR042898099 (DE-599)SPRJMR.1993.2679-e (SPR)JMR.1993.2679-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Moretti, P. verfasserin aut Characterization of europium implanted $ LiNbO_{3} $ 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ LiNbO_{3} $ single crystals were implanted at room temperature with $ Eu^{+} $ ions at 70 keV with fluence ranging from 0.5 to 5 × $ 10^{16} $ ions · $ cm^{−2} $. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in $ Eu^{2+} $ and $ Eu^{3+} $ states, and the $ Nb^{5+} $ ions are driven to lower charge states. Canut, B. verfasserin aut Ramos, S. M. M. verfasserin aut Brenier, R. verfasserin aut Thévenard, P. verfasserin aut Poker, D. verfasserin aut Da Cunha, J. B. M. verfasserin aut Amaral, L. verfasserin aut Vasquez, A. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 8(1993), 10 vom: 01. Okt., Seite 2679-2685 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:8 year:1993 number:10 day:01 month:10 pages:2679-2685 https://dx.doi.org/10.1557/JMR.1993.2679 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 8 1993 10 01 10 2679-2685 |
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670 ASE 51.00 bkl Characterization of europium implanted $ LiNbO_{3} $ |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Journal of materials research |
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670 - Manufacturing |
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Journal of materials research |
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Characterization of europium implanted $ LiNbO_{3} $ |
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Characterization of europium implanted $ LiNbO_{3} $ |
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Moretti, P. |
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Journal of materials research |
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Journal of materials research |
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1993 |
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Moretti, P. Canut, B. Ramos, S. M. M. Brenier, R. Thévenard, P. Poker, D. Da Cunha, J. B. M. Amaral, L. Vasquez, A. |
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Elektronische Aufsätze |
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670 |
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characterization of europium implanted $ linbo_{3} $ |
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Characterization of europium implanted $ LiNbO_{3} $ |
| abstract |
Abstract $ LiNbO_{3} $ single crystals were implanted at room temperature with $ Eu^{+} $ ions at 70 keV with fluence ranging from 0.5 to 5 × $ 10^{16} $ ions · $ cm^{−2} $. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in $ Eu^{2+} $ and $ Eu^{3+} $ states, and the $ Nb^{5+} $ ions are driven to lower charge states. |
| abstractGer |
Abstract $ LiNbO_{3} $ single crystals were implanted at room temperature with $ Eu^{+} $ ions at 70 keV with fluence ranging from 0.5 to 5 × $ 10^{16} $ ions · $ cm^{−2} $. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in $ Eu^{2+} $ and $ Eu^{3+} $ states, and the $ Nb^{5+} $ ions are driven to lower charge states. |
| abstract_unstemmed |
Abstract $ LiNbO_{3} $ single crystals were implanted at room temperature with $ Eu^{+} $ ions at 70 keV with fluence ranging from 0.5 to 5 × $ 10^{16} $ ions · $ cm^{−2} $. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in $ Eu^{2+} $ and $ Eu^{3+} $ states, and the $ Nb^{5+} $ ions are driven to lower charge states. |
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Characterization of europium implanted $ LiNbO_{3} $ |
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Canut, B. Ramos, S. M. M. Brenier, R. Thévenard, P. Poker, D. Da Cunha, J. B. M. Amaral, L. Vasquez, A. |
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