Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications

Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen pla...
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Autor*in:	Shang, Zong-Wei [verfasserIn] Xu, Qian [verfasserIn] He, Guan-You [verfasserIn] Zheng, Zhi-Wei [verfasserIn] Cheng, Chun-Hu [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966, 56(2021), 10 vom: 03. Jan., Seite 6286-6291
Übergeordnetes Werk:	volume:56 ; year:2021 ; number:10 ; day:03 ; month:01 ; pages:6286-6291

Links:	Volltext

DOI / URN:	10.1007/s10853-020-05708-x

Katalog-ID:	SPR042911834

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520			\|a Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized $ SnO_{x} $ TFT device exhibited an extremely high field-effect mobility of 87.6 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, a desirable on-to-off current ratio of 1.9 × $ 10^{4} $ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type $ SnO_{x} $ TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. These present results show that the $ SnO_{x} $ TFT treated by oxygen plasma has great promise in the future high-performance flat panel display industries.
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allfields	10.1007/s10853-020-05708-x doi (DE-627)SPR042911834 (DE-599)SPRs10853-020-05708-x-e (SPR)s10853-020-05708-x-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Shang, Zong-Wei verfasserin aut Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized $ SnO_{x} $ TFT device exhibited an extremely high field-effect mobility of 87.6 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, a desirable on-to-off current ratio of 1.9 × $ 10^{4} $ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type $ SnO_{x} $ TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. These present results show that the $ SnO_{x} $ TFT treated by oxygen plasma has great promise in the future high-performance flat panel display industries. Xu, Qian verfasserin aut He, Guan-You verfasserin aut Zheng, Zhi-Wei verfasserin aut Cheng, Chun-Hu verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 56(2021), 10 vom: 03. Jan., Seite 6286-6291 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:56 year:2021 number:10 day:03 month:01 pages:6286-6291 https://dx.doi.org/10.1007/s10853-020-05708-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 56 2021 10 03 01 6286-6291
spelling	10.1007/s10853-020-05708-x doi (DE-627)SPR042911834 (DE-599)SPRs10853-020-05708-x-e (SPR)s10853-020-05708-x-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Shang, Zong-Wei verfasserin aut Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized $ SnO_{x} $ TFT device exhibited an extremely high field-effect mobility of 87.6 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, a desirable on-to-off current ratio of 1.9 × $ 10^{4} $ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type $ SnO_{x} $ TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. These present results show that the $ SnO_{x} $ TFT treated by oxygen plasma has great promise in the future high-performance flat panel display industries. Xu, Qian verfasserin aut He, Guan-You verfasserin aut Zheng, Zhi-Wei verfasserin aut Cheng, Chun-Hu verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 56(2021), 10 vom: 03. Jan., Seite 6286-6291 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:56 year:2021 number:10 day:03 month:01 pages:6286-6291 https://dx.doi.org/10.1007/s10853-020-05708-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 56 2021 10 03 01 6286-6291
allfields_unstemmed	10.1007/s10853-020-05708-x doi (DE-627)SPR042911834 (DE-599)SPRs10853-020-05708-x-e (SPR)s10853-020-05708-x-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Shang, Zong-Wei verfasserin aut Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized $ SnO_{x} $ TFT device exhibited an extremely high field-effect mobility of 87.6 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, a desirable on-to-off current ratio of 1.9 × $ 10^{4} $ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type $ SnO_{x} $ TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. These present results show that the $ SnO_{x} $ TFT treated by oxygen plasma has great promise in the future high-performance flat panel display industries. Xu, Qian verfasserin aut He, Guan-You verfasserin aut Zheng, Zhi-Wei verfasserin aut Cheng, Chun-Hu verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 56(2021), 10 vom: 03. Jan., Seite 6286-6291 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:56 year:2021 number:10 day:03 month:01 pages:6286-6291 https://dx.doi.org/10.1007/s10853-020-05708-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 56 2021 10 03 01 6286-6291
allfieldsGer	10.1007/s10853-020-05708-x doi (DE-627)SPR042911834 (DE-599)SPRs10853-020-05708-x-e (SPR)s10853-020-05708-x-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Shang, Zong-Wei verfasserin aut Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized $ SnO_{x} $ TFT device exhibited an extremely high field-effect mobility of 87.6 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, a desirable on-to-off current ratio of 1.9 × $ 10^{4} $ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type $ SnO_{x} $ TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. These present results show that the $ SnO_{x} $ TFT treated by oxygen plasma has great promise in the future high-performance flat panel display industries. Xu, Qian verfasserin aut He, Guan-You verfasserin aut Zheng, Zhi-Wei verfasserin aut Cheng, Chun-Hu verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 56(2021), 10 vom: 03. Jan., Seite 6286-6291 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:56 year:2021 number:10 day:03 month:01 pages:6286-6291 https://dx.doi.org/10.1007/s10853-020-05708-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 56 2021 10 03 01 6286-6291
allfieldsSound	10.1007/s10853-020-05708-x doi (DE-627)SPR042911834 (DE-599)SPRs10853-020-05708-x-e (SPR)s10853-020-05708-x-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Shang, Zong-Wei verfasserin aut Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized $ SnO_{x} $ TFT device exhibited an extremely high field-effect mobility of 87.6 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, a desirable on-to-off current ratio of 1.9 × $ 10^{4} $ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type $ SnO_{x} $ TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. These present results show that the $ SnO_{x} $ TFT treated by oxygen plasma has great promise in the future high-performance flat panel display industries. Xu, Qian verfasserin aut He, Guan-You verfasserin aut Zheng, Zhi-Wei verfasserin aut Cheng, Chun-Hu verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 56(2021), 10 vom: 03. Jan., Seite 6286-6291 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:56 year:2021 number:10 day:03 month:01 pages:6286-6291 https://dx.doi.org/10.1007/s10853-020-05708-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 56 2021 10 03 01 6286-6291
language	English
source	Enthalten in Journal of materials science 56(2021), 10 vom: 03. Jan., Seite 6286-6291 volume:56 year:2021 number:10 day:03 month:01 pages:6286-6291
sourceStr	Enthalten in Journal of materials science 56(2021), 10 vom: 03. Jan., Seite 6286-6291 volume:56 year:2021 number:10 day:03 month:01 pages:6286-6291
format_phy_str_mv	Article
institution	findex.gbv.de
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container_title	Journal of materials science
authorswithroles_txt_mv	Shang, Zong-Wei @@aut@@ Xu, Qian @@aut@@ He, Guan-You @@aut@@ Zheng, Zhi-Wei @@aut@@ Cheng, Chun-Hu @@aut@@
publishDateDaySort_date	2021-01-03T00:00:00Z
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fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042911834</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111004334.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210130s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10853-020-05708-x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042911834</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRs10853-020-05708-x-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10853-020-05708-x-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Shang, Zong-Wei</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized $ SnO_{x} $ TFT device exhibited an extremely high field-effect mobility of 87.6 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, a desirable on-to-off current ratio of 1.9 × $ 10^{4} $ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type $ SnO_{x} $ TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. 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author	Shang, Zong-Wei
spellingShingle	Shang, Zong-Wei ddc 670 bkl 51.00 Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
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topic_title	670 ASE 51.00 bkl Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
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title	Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
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title_full	Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
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author_browse	Shang, Zong-Wei Xu, Qian He, Guan-You Zheng, Zhi-Wei Cheng, Chun-Hu
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author-letter	Shang, Zong-Wei
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title_sort	effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
title_auth	Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
abstract	Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized $ SnO_{x} $ TFT device exhibited an extremely high field-effect mobility of 87.6 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, a desirable on-to-off current ratio of 1.9 × $ 10^{4} $ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type $ SnO_{x} $ TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. These present results show that the $ SnO_{x} $ TFT treated by oxygen plasma has great promise in the future high-performance flat panel display industries.
abstractGer	Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized $ SnO_{x} $ TFT device exhibited an extremely high field-effect mobility of 87.6 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, a desirable on-to-off current ratio of 1.9 × $ 10^{4} $ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type $ SnO_{x} $ TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. These present results show that the $ SnO_{x} $ TFT treated by oxygen plasma has great promise in the future high-performance flat panel display industries.
abstract_unstemmed	Abstract In this study, the plasma oxidation effect in tin-oxide ($ SnO_{x} $) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the $ SnO_{x} $ thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized $ SnO_{x} $ TFT device exhibited an extremely high field-effect mobility of 87.6 $ cm^{2} $ $ V^{−1} $ $ s^{−1} $, a desirable on-to-off current ratio of 1.9 × $ 10^{4} $ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type $ SnO_{x} $ TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. These present results show that the $ SnO_{x} $ TFT treated by oxygen plasma has great promise in the future high-performance flat panel display industries.
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container_issue	10
title_short	Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
url	https://dx.doi.org/10.1007/s10853-020-05708-x
remote_bool	true
author2	Xu, Qian He, Guan-You Zheng, Zhi-Wei Cheng, Chun-Hu
author2Str	Xu, Qian He, Guan-You Zheng, Zhi-Wei Cheng, Chun-Hu
ppnlink	315293969
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1007/s10853-020-05708-x
up_date	2024-07-03T15:32:11.418Z
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Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications

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