Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET
Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the pr...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Sayyad, Pasha W. [verfasserIn] Ingle, Nikesh N. [verfasserIn] Al-Gahouari, Theeazen [verfasserIn] Mahadik, Manasi M. [verfasserIn] Bodkhe, Gajanan A. [verfasserIn] Shirsat, Sumedh M. [verfasserIn] Shirsat, Mahendra D. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1973, 127(2021), 3 vom: 05. Feb. |
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| Übergeordnetes Werk: |
volume:127 ; year:2021 ; number:3 ; day:05 ; month:02 |
| Links: |
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| DOI / URN: |
10.1007/s00339-021-04314-1 |
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| Katalog-ID: |
SPR043005764 |
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| 520 | |a Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the presence of an aqueous medium. However, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has proven its stability in both air and aqueous mediums. Nevertheless, due to inadequate structural and chemical properties of the PEDOT:PSS, it persists major obstacles and inhibits its performance in practical applications. These shortcomings can be overcome with the combination of carbon nanomaterials. Therefore, the present study deals with the effect of inclusion of reduced graphene oxide (rGO) into PEDOT:PSS, and it resulted in the enhancement of structural, morphological, and electrical properties of the PEDOT:PSS/rGO nanocomposite. The organic field-effect transistor (OFET) was fabricated with PEDOT:PSS/rGO nanocomposite to detect heavy-metal ions. This makes a highly sensitive and selective sensor platform for detecting $ Hg^{2+} $ in the linear concentration range of 1–60 nM. The presented OFET sensor manifests high sensitivity and selectivity to $ Hg^{2+} $ with a low detection limit of 2.4 nM. The variety of metal ions tested, i.e., $ Hg^{2+} $, $ Cd^{2+} $, $ Pb^{2+} $, $ Cu^{2+} $, $ Zn^{2+} $, $ Na^{+} $, and $ Fe^{3+} $, to investigate the selectivity. The sensor exhibits stable performance in an aqueous medium for the detection of $ Hg^{2+} $ in the presence of DI water. Moreover, the OFET sensor responded within 2–3 s after incubation of $ Hg^{2+} $ ions’ solution. | ||
| 650 | 4 | |a Heavy-metal ions detection |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Hg |7 (dpeaa)DE-He213 | |
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| 650 | 4 | |a Organic field-effect transistor (OFET) |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a PEDOT:PSS |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Reduced graphene oxide (rGO) |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Ingle, Nikesh N. |e verfasserin |4 aut | |
| 700 | 1 | |a Al-Gahouari, Theeazen |e verfasserin |4 aut | |
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| 700 | 1 | |a Bodkhe, Gajanan A. |e verfasserin |4 aut | |
| 700 | 1 | |a Shirsat, Sumedh M. |e verfasserin |4 aut | |
| 700 | 1 | |a Shirsat, Mahendra D. |e verfasserin |4 aut | |
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10.1007/s00339-021-04314-1 doi (DE-627)SPR043005764 (DE-599)SPRs00339-021-04314-1-e (SPR)s00339-021-04314-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Sayyad, Pasha W. verfasserin aut Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the presence of an aqueous medium. However, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has proven its stability in both air and aqueous mediums. Nevertheless, due to inadequate structural and chemical properties of the PEDOT:PSS, it persists major obstacles and inhibits its performance in practical applications. These shortcomings can be overcome with the combination of carbon nanomaterials. Therefore, the present study deals with the effect of inclusion of reduced graphene oxide (rGO) into PEDOT:PSS, and it resulted in the enhancement of structural, morphological, and electrical properties of the PEDOT:PSS/rGO nanocomposite. The organic field-effect transistor (OFET) was fabricated with PEDOT:PSS/rGO nanocomposite to detect heavy-metal ions. This makes a highly sensitive and selective sensor platform for detecting $ Hg^{2+} $ in the linear concentration range of 1–60 nM. The presented OFET sensor manifests high sensitivity and selectivity to $ Hg^{2+} $ with a low detection limit of 2.4 nM. The variety of metal ions tested, i.e., $ Hg^{2+} $, $ Cd^{2+} $, $ Pb^{2+} $, $ Cu^{2+} $, $ Zn^{2+} $, $ Na^{+} $, and $ Fe^{3+} $, to investigate the selectivity. The sensor exhibits stable performance in an aqueous medium for the detection of $ Hg^{2+} $ in the presence of DI water. Moreover, the OFET sensor responded within 2–3 s after incubation of $ Hg^{2+} $ ions’ solution. Heavy-metal ions detection (dpeaa)DE-He213 Hg (dpeaa)DE-He213 detection (dpeaa)DE-He213 Organic field-effect transistor (OFET) (dpeaa)DE-He213 PEDOT:PSS (dpeaa)DE-He213 Reduced graphene oxide (rGO) (dpeaa)DE-He213 Ingle, Nikesh N. verfasserin aut Al-Gahouari, Theeazen verfasserin aut Mahadik, Manasi M. verfasserin aut Bodkhe, Gajanan A. verfasserin aut Shirsat, Sumedh M. verfasserin aut Shirsat, Mahendra D. verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 127(2021), 3 vom: 05. Feb. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:127 year:2021 number:3 day:05 month:02 https://dx.doi.org/10.1007/s00339-021-04314-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 127 2021 3 05 02 |
| spelling |
10.1007/s00339-021-04314-1 doi (DE-627)SPR043005764 (DE-599)SPRs00339-021-04314-1-e (SPR)s00339-021-04314-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Sayyad, Pasha W. verfasserin aut Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the presence of an aqueous medium. However, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has proven its stability in both air and aqueous mediums. Nevertheless, due to inadequate structural and chemical properties of the PEDOT:PSS, it persists major obstacles and inhibits its performance in practical applications. These shortcomings can be overcome with the combination of carbon nanomaterials. Therefore, the present study deals with the effect of inclusion of reduced graphene oxide (rGO) into PEDOT:PSS, and it resulted in the enhancement of structural, morphological, and electrical properties of the PEDOT:PSS/rGO nanocomposite. The organic field-effect transistor (OFET) was fabricated with PEDOT:PSS/rGO nanocomposite to detect heavy-metal ions. This makes a highly sensitive and selective sensor platform for detecting $ Hg^{2+} $ in the linear concentration range of 1–60 nM. The presented OFET sensor manifests high sensitivity and selectivity to $ Hg^{2+} $ with a low detection limit of 2.4 nM. The variety of metal ions tested, i.e., $ Hg^{2+} $, $ Cd^{2+} $, $ Pb^{2+} $, $ Cu^{2+} $, $ Zn^{2+} $, $ Na^{+} $, and $ Fe^{3+} $, to investigate the selectivity. The sensor exhibits stable performance in an aqueous medium for the detection of $ Hg^{2+} $ in the presence of DI water. Moreover, the OFET sensor responded within 2–3 s after incubation of $ Hg^{2+} $ ions’ solution. Heavy-metal ions detection (dpeaa)DE-He213 Hg (dpeaa)DE-He213 detection (dpeaa)DE-He213 Organic field-effect transistor (OFET) (dpeaa)DE-He213 PEDOT:PSS (dpeaa)DE-He213 Reduced graphene oxide (rGO) (dpeaa)DE-He213 Ingle, Nikesh N. verfasserin aut Al-Gahouari, Theeazen verfasserin aut Mahadik, Manasi M. verfasserin aut Bodkhe, Gajanan A. verfasserin aut Shirsat, Sumedh M. verfasserin aut Shirsat, Mahendra D. verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 127(2021), 3 vom: 05. Feb. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:127 year:2021 number:3 day:05 month:02 https://dx.doi.org/10.1007/s00339-021-04314-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 127 2021 3 05 02 |
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10.1007/s00339-021-04314-1 doi (DE-627)SPR043005764 (DE-599)SPRs00339-021-04314-1-e (SPR)s00339-021-04314-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Sayyad, Pasha W. verfasserin aut Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the presence of an aqueous medium. However, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has proven its stability in both air and aqueous mediums. Nevertheless, due to inadequate structural and chemical properties of the PEDOT:PSS, it persists major obstacles and inhibits its performance in practical applications. These shortcomings can be overcome with the combination of carbon nanomaterials. Therefore, the present study deals with the effect of inclusion of reduced graphene oxide (rGO) into PEDOT:PSS, and it resulted in the enhancement of structural, morphological, and electrical properties of the PEDOT:PSS/rGO nanocomposite. The organic field-effect transistor (OFET) was fabricated with PEDOT:PSS/rGO nanocomposite to detect heavy-metal ions. This makes a highly sensitive and selective sensor platform for detecting $ Hg^{2+} $ in the linear concentration range of 1–60 nM. The presented OFET sensor manifests high sensitivity and selectivity to $ Hg^{2+} $ with a low detection limit of 2.4 nM. The variety of metal ions tested, i.e., $ Hg^{2+} $, $ Cd^{2+} $, $ Pb^{2+} $, $ Cu^{2+} $, $ Zn^{2+} $, $ Na^{+} $, and $ Fe^{3+} $, to investigate the selectivity. The sensor exhibits stable performance in an aqueous medium for the detection of $ Hg^{2+} $ in the presence of DI water. Moreover, the OFET sensor responded within 2–3 s after incubation of $ Hg^{2+} $ ions’ solution. Heavy-metal ions detection (dpeaa)DE-He213 Hg (dpeaa)DE-He213 detection (dpeaa)DE-He213 Organic field-effect transistor (OFET) (dpeaa)DE-He213 PEDOT:PSS (dpeaa)DE-He213 Reduced graphene oxide (rGO) (dpeaa)DE-He213 Ingle, Nikesh N. verfasserin aut Al-Gahouari, Theeazen verfasserin aut Mahadik, Manasi M. verfasserin aut Bodkhe, Gajanan A. verfasserin aut Shirsat, Sumedh M. verfasserin aut Shirsat, Mahendra D. verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 127(2021), 3 vom: 05. Feb. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:127 year:2021 number:3 day:05 month:02 https://dx.doi.org/10.1007/s00339-021-04314-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 127 2021 3 05 02 |
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10.1007/s00339-021-04314-1 doi (DE-627)SPR043005764 (DE-599)SPRs00339-021-04314-1-e (SPR)s00339-021-04314-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Sayyad, Pasha W. verfasserin aut Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the presence of an aqueous medium. However, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has proven its stability in both air and aqueous mediums. Nevertheless, due to inadequate structural and chemical properties of the PEDOT:PSS, it persists major obstacles and inhibits its performance in practical applications. These shortcomings can be overcome with the combination of carbon nanomaterials. Therefore, the present study deals with the effect of inclusion of reduced graphene oxide (rGO) into PEDOT:PSS, and it resulted in the enhancement of structural, morphological, and electrical properties of the PEDOT:PSS/rGO nanocomposite. The organic field-effect transistor (OFET) was fabricated with PEDOT:PSS/rGO nanocomposite to detect heavy-metal ions. This makes a highly sensitive and selective sensor platform for detecting $ Hg^{2+} $ in the linear concentration range of 1–60 nM. The presented OFET sensor manifests high sensitivity and selectivity to $ Hg^{2+} $ with a low detection limit of 2.4 nM. The variety of metal ions tested, i.e., $ Hg^{2+} $, $ Cd^{2+} $, $ Pb^{2+} $, $ Cu^{2+} $, $ Zn^{2+} $, $ Na^{+} $, and $ Fe^{3+} $, to investigate the selectivity. The sensor exhibits stable performance in an aqueous medium for the detection of $ Hg^{2+} $ in the presence of DI water. Moreover, the OFET sensor responded within 2–3 s after incubation of $ Hg^{2+} $ ions’ solution. Heavy-metal ions detection (dpeaa)DE-He213 Hg (dpeaa)DE-He213 detection (dpeaa)DE-He213 Organic field-effect transistor (OFET) (dpeaa)DE-He213 PEDOT:PSS (dpeaa)DE-He213 Reduced graphene oxide (rGO) (dpeaa)DE-He213 Ingle, Nikesh N. verfasserin aut Al-Gahouari, Theeazen verfasserin aut Mahadik, Manasi M. verfasserin aut Bodkhe, Gajanan A. verfasserin aut Shirsat, Sumedh M. verfasserin aut Shirsat, Mahendra D. verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 127(2021), 3 vom: 05. Feb. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:127 year:2021 number:3 day:05 month:02 https://dx.doi.org/10.1007/s00339-021-04314-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 127 2021 3 05 02 |
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10.1007/s00339-021-04314-1 doi (DE-627)SPR043005764 (DE-599)SPRs00339-021-04314-1-e (SPR)s00339-021-04314-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Sayyad, Pasha W. verfasserin aut Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the presence of an aqueous medium. However, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has proven its stability in both air and aqueous mediums. Nevertheless, due to inadequate structural and chemical properties of the PEDOT:PSS, it persists major obstacles and inhibits its performance in practical applications. These shortcomings can be overcome with the combination of carbon nanomaterials. Therefore, the present study deals with the effect of inclusion of reduced graphene oxide (rGO) into PEDOT:PSS, and it resulted in the enhancement of structural, morphological, and electrical properties of the PEDOT:PSS/rGO nanocomposite. The organic field-effect transistor (OFET) was fabricated with PEDOT:PSS/rGO nanocomposite to detect heavy-metal ions. This makes a highly sensitive and selective sensor platform for detecting $ Hg^{2+} $ in the linear concentration range of 1–60 nM. The presented OFET sensor manifests high sensitivity and selectivity to $ Hg^{2+} $ with a low detection limit of 2.4 nM. The variety of metal ions tested, i.e., $ Hg^{2+} $, $ Cd^{2+} $, $ Pb^{2+} $, $ Cu^{2+} $, $ Zn^{2+} $, $ Na^{+} $, and $ Fe^{3+} $, to investigate the selectivity. The sensor exhibits stable performance in an aqueous medium for the detection of $ Hg^{2+} $ in the presence of DI water. Moreover, the OFET sensor responded within 2–3 s after incubation of $ Hg^{2+} $ ions’ solution. Heavy-metal ions detection (dpeaa)DE-He213 Hg (dpeaa)DE-He213 detection (dpeaa)DE-He213 Organic field-effect transistor (OFET) (dpeaa)DE-He213 PEDOT:PSS (dpeaa)DE-He213 Reduced graphene oxide (rGO) (dpeaa)DE-He213 Ingle, Nikesh N. verfasserin aut Al-Gahouari, Theeazen verfasserin aut Mahadik, Manasi M. verfasserin aut Bodkhe, Gajanan A. verfasserin aut Shirsat, Sumedh M. verfasserin aut Shirsat, Mahendra D. verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 127(2021), 3 vom: 05. Feb. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:127 year:2021 number:3 day:05 month:02 https://dx.doi.org/10.1007/s00339-021-04314-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 127 2021 3 05 02 |
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Enthalten in Applied physics 127(2021), 3 vom: 05. Feb. volume:127 year:2021 number:3 day:05 month:02 |
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Enthalten in Applied physics 127(2021), 3 vom: 05. Feb. volume:127 year:2021 number:3 day:05 month:02 |
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Heavy-metal ions detection Hg detection Organic field-effect transistor (OFET) PEDOT:PSS Reduced graphene oxide (rGO) |
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Sayyad, Pasha W. @@aut@@ Ingle, Nikesh N. @@aut@@ Al-Gahouari, Theeazen @@aut@@ Mahadik, Manasi M. @@aut@@ Bodkhe, Gajanan A. @@aut@@ Shirsat, Sumedh M. @@aut@@ Shirsat, Mahendra D. @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR043005764</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220110173143.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210205s2021 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-021-04314-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR043005764</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRs00339-021-04314-1-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s00339-021-04314-1-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.09</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sayyad, Pasha W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the presence of an aqueous medium. However, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has proven its stability in both air and aqueous mediums. Nevertheless, due to inadequate structural and chemical properties of the PEDOT:PSS, it persists major obstacles and inhibits its performance in practical applications. These shortcomings can be overcome with the combination of carbon nanomaterials. Therefore, the present study deals with the effect of inclusion of reduced graphene oxide (rGO) into PEDOT:PSS, and it resulted in the enhancement of structural, morphological, and electrical properties of the PEDOT:PSS/rGO nanocomposite. The organic field-effect transistor (OFET) was fabricated with PEDOT:PSS/rGO nanocomposite to detect heavy-metal ions. This makes a highly sensitive and selective sensor platform for detecting $ Hg^{2+} $ in the linear concentration range of 1–60 nM. The presented OFET sensor manifests high sensitivity and selectivity to $ Hg^{2+} $ with a low detection limit of 2.4 nM. The variety of metal ions tested, i.e., $ Hg^{2+} $, $ Cd^{2+} $, $ Pb^{2+} $, $ Cu^{2+} $, $ Zn^{2+} $, $ Na^{+} $, and $ Fe^{3+} $, to investigate the selectivity. The sensor exhibits stable performance in an aqueous medium for the detection of $ Hg^{2+} $ in the presence of DI water. 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|
| author |
Sayyad, Pasha W. |
| spellingShingle |
Sayyad, Pasha W. ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc Heavy-metal ions detection misc Hg misc detection misc Organic field-effect transistor (OFET) misc PEDOT:PSS misc Reduced graphene oxide (rGO) Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET |
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Sayyad, Pasha W. |
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@@773@@(DE-627)235503231 |
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electronic Article |
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530 - Physics |
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keep |
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springer |
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1432-0630 |
| topic_title |
530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET Heavy-metal ions detection (dpeaa)DE-He213 Hg (dpeaa)DE-He213 detection (dpeaa)DE-He213 Organic field-effect transistor (OFET) (dpeaa)DE-He213 PEDOT:PSS (dpeaa)DE-He213 Reduced graphene oxide (rGO) (dpeaa)DE-He213 |
| topic |
ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc Heavy-metal ions detection misc Hg misc detection misc Organic field-effect transistor (OFET) misc PEDOT:PSS misc Reduced graphene oxide (rGO) |
| topic_unstemmed |
ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc Heavy-metal ions detection misc Hg misc detection misc Organic field-effect transistor (OFET) misc PEDOT:PSS misc Reduced graphene oxide (rGO) |
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ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc Heavy-metal ions detection misc Hg misc detection misc Organic field-effect transistor (OFET) misc PEDOT:PSS misc Reduced graphene oxide (rGO) |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Applied physics |
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235503231 |
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530 - Physics |
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Applied physics |
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Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET |
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Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET |
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Sayyad, Pasha W. |
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Applied physics |
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Sayyad, Pasha W. Ingle, Nikesh N. Al-Gahouari, Theeazen Mahadik, Manasi M. Bodkhe, Gajanan A. Shirsat, Sumedh M. Shirsat, Mahendra D. |
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selective $ hg^{2+} $ sensor: rgo-blended pedot:pss conducting polymer ofet |
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Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET |
| abstract |
Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the presence of an aqueous medium. However, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has proven its stability in both air and aqueous mediums. Nevertheless, due to inadequate structural and chemical properties of the PEDOT:PSS, it persists major obstacles and inhibits its performance in practical applications. These shortcomings can be overcome with the combination of carbon nanomaterials. Therefore, the present study deals with the effect of inclusion of reduced graphene oxide (rGO) into PEDOT:PSS, and it resulted in the enhancement of structural, morphological, and electrical properties of the PEDOT:PSS/rGO nanocomposite. The organic field-effect transistor (OFET) was fabricated with PEDOT:PSS/rGO nanocomposite to detect heavy-metal ions. This makes a highly sensitive and selective sensor platform for detecting $ Hg^{2+} $ in the linear concentration range of 1–60 nM. The presented OFET sensor manifests high sensitivity and selectivity to $ Hg^{2+} $ with a low detection limit of 2.4 nM. The variety of metal ions tested, i.e., $ Hg^{2+} $, $ Cd^{2+} $, $ Pb^{2+} $, $ Cu^{2+} $, $ Zn^{2+} $, $ Na^{+} $, and $ Fe^{3+} $, to investigate the selectivity. The sensor exhibits stable performance in an aqueous medium for the detection of $ Hg^{2+} $ in the presence of DI water. Moreover, the OFET sensor responded within 2–3 s after incubation of $ Hg^{2+} $ ions’ solution. |
| abstractGer |
Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the presence of an aqueous medium. However, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has proven its stability in both air and aqueous mediums. Nevertheless, due to inadequate structural and chemical properties of the PEDOT:PSS, it persists major obstacles and inhibits its performance in practical applications. These shortcomings can be overcome with the combination of carbon nanomaterials. Therefore, the present study deals with the effect of inclusion of reduced graphene oxide (rGO) into PEDOT:PSS, and it resulted in the enhancement of structural, morphological, and electrical properties of the PEDOT:PSS/rGO nanocomposite. The organic field-effect transistor (OFET) was fabricated with PEDOT:PSS/rGO nanocomposite to detect heavy-metal ions. This makes a highly sensitive and selective sensor platform for detecting $ Hg^{2+} $ in the linear concentration range of 1–60 nM. The presented OFET sensor manifests high sensitivity and selectivity to $ Hg^{2+} $ with a low detection limit of 2.4 nM. The variety of metal ions tested, i.e., $ Hg^{2+} $, $ Cd^{2+} $, $ Pb^{2+} $, $ Cu^{2+} $, $ Zn^{2+} $, $ Na^{+} $, and $ Fe^{3+} $, to investigate the selectivity. The sensor exhibits stable performance in an aqueous medium for the detection of $ Hg^{2+} $ in the presence of DI water. Moreover, the OFET sensor responded within 2–3 s after incubation of $ Hg^{2+} $ ions’ solution. |
| abstract_unstemmed |
Abstract The detection of water pollutants employing organic field-effect transistor (OFET) sensor requires a stable performance in an aqueous media. It is an essential condition of any sensor to present reliable measurements. Some organic-conducting polymers deteriorate almost immediately in the presence of an aqueous medium. However, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has proven its stability in both air and aqueous mediums. Nevertheless, due to inadequate structural and chemical properties of the PEDOT:PSS, it persists major obstacles and inhibits its performance in practical applications. These shortcomings can be overcome with the combination of carbon nanomaterials. Therefore, the present study deals with the effect of inclusion of reduced graphene oxide (rGO) into PEDOT:PSS, and it resulted in the enhancement of structural, morphological, and electrical properties of the PEDOT:PSS/rGO nanocomposite. The organic field-effect transistor (OFET) was fabricated with PEDOT:PSS/rGO nanocomposite to detect heavy-metal ions. This makes a highly sensitive and selective sensor platform for detecting $ Hg^{2+} $ in the linear concentration range of 1–60 nM. The presented OFET sensor manifests high sensitivity and selectivity to $ Hg^{2+} $ with a low detection limit of 2.4 nM. The variety of metal ions tested, i.e., $ Hg^{2+} $, $ Cd^{2+} $, $ Pb^{2+} $, $ Cu^{2+} $, $ Zn^{2+} $, $ Na^{+} $, and $ Fe^{3+} $, to investigate the selectivity. The sensor exhibits stable performance in an aqueous medium for the detection of $ Hg^{2+} $ in the presence of DI water. Moreover, the OFET sensor responded within 2–3 s after incubation of $ Hg^{2+} $ ions’ solution. |
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Selective $ Hg^{2+} $ sensor: rGO-blended PEDOT:PSS conducting polymer OFET |
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| score |
7.4003143 |