The Role of Si-H, Si-$ H_{2} $ and Oxygen in the Photoluminescence of Porous Si
Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL ou...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lavine, J. M. [verfasserIn] Bellezza, A. J. [verfasserIn] Sawan, S. P. [verfasserIn] Shieh, Y-T. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1992 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 283(1992), 1 vom: 01. Sept., Seite 293-298 |
|---|---|
| Übergeordnetes Werk: |
volume:283 ; year:1992 ; number:1 ; day:01 ; month:09 ; pages:293-298 |
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10.1557/PROC-283-293 |
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| 520 | |a Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 $ cm^{−1} $. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 $ cm^{−1} $ under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface. | ||
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10.1557/PROC-283-293 doi (DE-627)SPR04303523X (DE-599)SPRPROC-283-293-e (SPR)PROC-283-293-e DE-627 ger DE-627 rakwb eng 670 ASE Lavine, J. M. verfasserin aut The Role of Si-H, Si-$ H_{2} $ and Oxygen in the Photoluminescence of Porous Si 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 $ cm^{−1} $. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 $ cm^{−1} $ under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface. Bellezza, A. J. verfasserin aut Sawan, S. P. verfasserin aut Shieh, Y-T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 283(1992), 1 vom: 01. Sept., Seite 293-298 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:283 year:1992 number:1 day:01 month:09 pages:293-298 https://dx.doi.org/10.1557/PROC-283-293 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 283 1992 1 01 09 293-298 |
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10.1557/PROC-283-293 doi (DE-627)SPR04303523X (DE-599)SPRPROC-283-293-e (SPR)PROC-283-293-e DE-627 ger DE-627 rakwb eng 670 ASE Lavine, J. M. verfasserin aut The Role of Si-H, Si-$ H_{2} $ and Oxygen in the Photoluminescence of Porous Si 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 $ cm^{−1} $. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 $ cm^{−1} $ under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface. Bellezza, A. J. verfasserin aut Sawan, S. P. verfasserin aut Shieh, Y-T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 283(1992), 1 vom: 01. Sept., Seite 293-298 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:283 year:1992 number:1 day:01 month:09 pages:293-298 https://dx.doi.org/10.1557/PROC-283-293 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 283 1992 1 01 09 293-298 |
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10.1557/PROC-283-293 doi (DE-627)SPR04303523X (DE-599)SPRPROC-283-293-e (SPR)PROC-283-293-e DE-627 ger DE-627 rakwb eng 670 ASE Lavine, J. M. verfasserin aut The Role of Si-H, Si-$ H_{2} $ and Oxygen in the Photoluminescence of Porous Si 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 $ cm^{−1} $. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 $ cm^{−1} $ under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface. Bellezza, A. J. verfasserin aut Sawan, S. P. verfasserin aut Shieh, Y-T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 283(1992), 1 vom: 01. Sept., Seite 293-298 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:283 year:1992 number:1 day:01 month:09 pages:293-298 https://dx.doi.org/10.1557/PROC-283-293 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 283 1992 1 01 09 293-298 |
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10.1557/PROC-283-293 doi (DE-627)SPR04303523X (DE-599)SPRPROC-283-293-e (SPR)PROC-283-293-e DE-627 ger DE-627 rakwb eng 670 ASE Lavine, J. M. verfasserin aut The Role of Si-H, Si-$ H_{2} $ and Oxygen in the Photoluminescence of Porous Si 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 $ cm^{−1} $. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 $ cm^{−1} $ under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface. Bellezza, A. J. verfasserin aut Sawan, S. P. verfasserin aut Shieh, Y-T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 283(1992), 1 vom: 01. Sept., Seite 293-298 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:283 year:1992 number:1 day:01 month:09 pages:293-298 https://dx.doi.org/10.1557/PROC-283-293 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 283 1992 1 01 09 293-298 |
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10.1557/PROC-283-293 doi (DE-627)SPR04303523X (DE-599)SPRPROC-283-293-e (SPR)PROC-283-293-e DE-627 ger DE-627 rakwb eng 670 ASE Lavine, J. M. verfasserin aut The Role of Si-H, Si-$ H_{2} $ and Oxygen in the Photoluminescence of Porous Si 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 $ cm^{−1} $. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 $ cm^{−1} $ under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface. Bellezza, A. J. verfasserin aut Sawan, S. P. verfasserin aut Shieh, Y-T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 283(1992), 1 vom: 01. Sept., Seite 293-298 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:283 year:1992 number:1 day:01 month:09 pages:293-298 https://dx.doi.org/10.1557/PROC-283-293 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 283 1992 1 01 09 293-298 |
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Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 $ cm^{−1} $. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 $ cm^{−1} $ under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface. |
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Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 $ cm^{−1} $. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 $ cm^{−1} $ under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface. |
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Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 $ cm^{−1} $. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 $ cm^{−1} $ under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR04303523X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051900.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210206s1992 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-283-293</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR04303523X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-283-293-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-283-293-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lavine, J. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="4"><subfield code="a">The Role of Si-H, Si-$ H_{2} $ and Oxygen in the Photoluminescence of Porous Si</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1992</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 $ cm^{−1} $ (Si-H) and at 912 and 2112 $ cm^{−1} $ (Si-$ H_{2} $) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 $ cm^{−1} $. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 $ cm^{−1} $ under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bellezza, A. J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sawan, S. P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shieh, Y-T.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">283(1992), 1 vom: 01. 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