Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers
Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Hebard, A. F. [verfasserIn] Eom, C.-B. [verfasserIn] Haddon, R. C. [verfasserIn] Phillips, Julia M. [verfasserIn] Marshall, J. H. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1994 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 359(1994), 1 vom: Dez., Seite 387-392 |
|---|---|
| Übergeordnetes Werk: |
volume:359 ; year:1994 ; number:1 ; month:12 ; pages:387-392 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-359-387 |
|---|
| Katalog-ID: |
SPR043065805 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR043065805 | ||
| 003 | DE-627 | ||
| 005 | 20220112052126.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 210208s1994 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-359-387 |2 doi | |
| 035 | |a (DE-627)SPR043065805 | ||
| 035 | |a (DE-599)SPRPROC-359-387-e | ||
| 035 | |a (SPR)PROC-359-387-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Hebard, A. F. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers |
| 264 | 1 | |c 1994 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth. | ||
| 700 | 1 | |a Eom, C.-B. |e verfasserin |4 aut | |
| 700 | 1 | |a Haddon, R. C. |e verfasserin |4 aut | |
| 700 | 1 | |a Phillips, Julia M. |e verfasserin |4 aut | |
| 700 | 1 | |a Marshall, J. H. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 359(1994), 1 vom: Dez., Seite 387-392 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:359 |g year:1994 |g number:1 |g month:12 |g pages:387-392 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-359-387 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 359 |j 1994 |e 1 |c 12 |h 387-392 | ||
| author_variant |
a f h af afh c b e cbe r c h rc rch j m p jm jmp j h m jh jhm |
|---|---|
| matchkey_str |
article:19464274:1994----::eaflncetoadrwhn_0n |
| hierarchy_sort_str |
1994 |
| publishDate |
1994 |
| allfields |
10.1557/PROC-359-387 doi (DE-627)SPR043065805 (DE-599)SPRPROC-359-387-e (SPR)PROC-359-387-e DE-627 ger DE-627 rakwb eng 670 ASE Hebard, A. F. verfasserin aut Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth. Eom, C.-B. verfasserin aut Haddon, R. C. verfasserin aut Phillips, Julia M. verfasserin aut Marshall, J. H. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 359(1994), 1 vom: Dez., Seite 387-392 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:359 year:1994 number:1 month:12 pages:387-392 https://dx.doi.org/10.1557/PROC-359-387 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 359 1994 1 12 387-392 |
| spelling |
10.1557/PROC-359-387 doi (DE-627)SPR043065805 (DE-599)SPRPROC-359-387-e (SPR)PROC-359-387-e DE-627 ger DE-627 rakwb eng 670 ASE Hebard, A. F. verfasserin aut Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth. Eom, C.-B. verfasserin aut Haddon, R. C. verfasserin aut Phillips, Julia M. verfasserin aut Marshall, J. H. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 359(1994), 1 vom: Dez., Seite 387-392 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:359 year:1994 number:1 month:12 pages:387-392 https://dx.doi.org/10.1557/PROC-359-387 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 359 1994 1 12 387-392 |
| allfields_unstemmed |
10.1557/PROC-359-387 doi (DE-627)SPR043065805 (DE-599)SPRPROC-359-387-e (SPR)PROC-359-387-e DE-627 ger DE-627 rakwb eng 670 ASE Hebard, A. F. verfasserin aut Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth. Eom, C.-B. verfasserin aut Haddon, R. C. verfasserin aut Phillips, Julia M. verfasserin aut Marshall, J. H. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 359(1994), 1 vom: Dez., Seite 387-392 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:359 year:1994 number:1 month:12 pages:387-392 https://dx.doi.org/10.1557/PROC-359-387 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 359 1994 1 12 387-392 |
| allfieldsGer |
10.1557/PROC-359-387 doi (DE-627)SPR043065805 (DE-599)SPRPROC-359-387-e (SPR)PROC-359-387-e DE-627 ger DE-627 rakwb eng 670 ASE Hebard, A. F. verfasserin aut Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth. Eom, C.-B. verfasserin aut Haddon, R. C. verfasserin aut Phillips, Julia M. verfasserin aut Marshall, J. H. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 359(1994), 1 vom: Dez., Seite 387-392 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:359 year:1994 number:1 month:12 pages:387-392 https://dx.doi.org/10.1557/PROC-359-387 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 359 1994 1 12 387-392 |
| allfieldsSound |
10.1557/PROC-359-387 doi (DE-627)SPR043065805 (DE-599)SPRPROC-359-387-e (SPR)PROC-359-387-e DE-627 ger DE-627 rakwb eng 670 ASE Hebard, A. F. verfasserin aut Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth. Eom, C.-B. verfasserin aut Haddon, R. C. verfasserin aut Phillips, Julia M. verfasserin aut Marshall, J. H. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 359(1994), 1 vom: Dez., Seite 387-392 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:359 year:1994 number:1 month:12 pages:387-392 https://dx.doi.org/10.1557/PROC-359-387 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 359 1994 1 12 387-392 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 359(1994), 1 vom: Dez., Seite 387-392 volume:359 year:1994 number:1 month:12 pages:387-392 |
| sourceStr |
Enthalten in MRS online proceedings library 359(1994), 1 vom: Dez., Seite 387-392 volume:359 year:1994 number:1 month:12 pages:387-392 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Hebard, A. F. @@aut@@ Eom, C.-B. @@aut@@ Haddon, R. C. @@aut@@ Phillips, Julia M. @@aut@@ Marshall, J. H. @@aut@@ |
| publishDateDaySort_date |
1994-12-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR043065805 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR043065805</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052126.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210208s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-359-387</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR043065805</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-359-387-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-359-387-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hebard, A. F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Eom, C.-B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Haddon, R. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Phillips, Julia M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Marshall, J. H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">359(1994), 1 vom: Dez., Seite 387-392</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:359</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:387-392</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-359-387</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">359</subfield><subfield code="j">1994</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">387-392</subfield></datafield></record></collection>
|
| author |
Hebard, A. F. |
| spellingShingle |
Hebard, A. F. ddc 670 Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers |
| authorStr |
Hebard, A. F. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers |
| ctrlnum |
(DE-627)SPR043065805 (DE-599)SPRPROC-359-387-e (SPR)PROC-359-387-e |
| title_full |
Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers |
| author_sort |
Hebard, A. F. |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1994 |
| contenttype_str_mv |
txt |
| container_start_page |
387 |
| author_browse |
Hebard, A. F. Eom, C.-B. Haddon, R. C. Phillips, Julia M. Marshall, J. H. |
| container_volume |
359 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Hebard, A. F. |
| doi_str_mv |
10.1557/PROC-359-387 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
metal film nucleation and growth on $ c_{60} $ interfacial layers |
| title_auth |
Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers |
| abstract |
Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth. |
| abstractGer |
Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth. |
| abstract_unstemmed |
Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers |
| url |
https://dx.doi.org/10.1557/PROC-359-387 |
| remote_bool |
true |
| author2 |
Eom, C.-B. Haddon, R. C. Phillips, Julia M. Marshall, J. H. |
| author2Str |
Eom, C.-B. Haddon, R. C. Phillips, Julia M. Marshall, J. H. |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-359-387 |
| up_date |
2024-07-03T16:25:37.028Z |
| _version_ |
1803575819794120704 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR043065805</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052126.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210208s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-359-387</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR043065805</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-359-387-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-359-387-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hebard, A. F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Metal Film Nucleation and Growth on $ C_{60} $ Interfacial Layers</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The effect that the presence or absence of interfacial C 60 layers has on the nucleation and subsequent growth of overlying thin metal films has been studied using in situ resistivity measurements. Comparisons are made for Al and Cu films grown on quartz and yttria stabilized zir-conia (YSZ) substrates. Our results indicate that electron donation across M/$ C_{60} $ (M=A1, Cu) interfaces reduces the percolation threshold for conductivity while simultaneously giving rise to an increased resistance in the metal due to electron depletion. Additional physical processes that are taken into account include the effect of different interfacial energies at the M/$ C_{60} $ and M/substrate boundaries and the effect of substrate tunneling between percolating metallic islands during the initial stages of film growth.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Eom, C.-B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Haddon, R. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Phillips, Julia M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Marshall, J. H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">359(1994), 1 vom: Dez., Seite 387-392</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:359</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:387-392</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-359-387</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">359</subfield><subfield code="j">1994</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">387-392</subfield></datafield></record></collection>
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