Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source
Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ferrari, A. C. [verfasserIn] Racine, B. [verfasserIn] Morrison, N. A. [verfasserIn] Hutchings, I. [verfasserIn] Milne, W. I. [verfasserIn] Robertson, J. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1999 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 593(1999), 1 vom: Dez., Seite 523-528 |
|---|---|
| Übergeordnetes Werk: |
volume:593 ; year:1999 ; number:1 ; month:12 ; pages:523-528 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-593-523 |
|---|
| Katalog-ID: |
SPR043070752 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR043070752 | ||
| 003 | DE-627 | ||
| 005 | 20220112052727.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 210208s1999 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-593-523 |2 doi | |
| 035 | |a (DE-627)SPR043070752 | ||
| 035 | |a (DE-599)SPRPROC-593-523-e | ||
| 035 | |a (SPR)PROC-593-523-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Ferrari, A. C. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source |
| 264 | 1 | |c 1999 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV. | ||
| 700 | 1 | |a Racine, B. |e verfasserin |4 aut | |
| 700 | 1 | |a Morrison, N. A. |e verfasserin |4 aut | |
| 700 | 1 | |a Hutchings, I. |e verfasserin |4 aut | |
| 700 | 1 | |a Milne, W. I. |e verfasserin |4 aut | |
| 700 | 1 | |a Robertson, J. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 593(1999), 1 vom: Dez., Seite 523-528 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:593 |g year:1999 |g number:1 |g month:12 |g pages:523-528 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-593-523 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 593 |j 1999 |e 1 |c 12 |h 523-528 | ||
| author_variant |
a c f ac acf b r br n a m na nam i h ih w i m wi wim j r jr |
|---|---|
| matchkey_str |
article:19464274:1999----::mrhucroslcnlosrprdyhgp |
| hierarchy_sort_str |
1999 |
| publishDate |
1999 |
| allfields |
10.1557/PROC-593-523 doi (DE-627)SPR043070752 (DE-599)SPRPROC-593-523-e (SPR)PROC-593-523-e DE-627 ger DE-627 rakwb eng 670 ASE Ferrari, A. C. verfasserin aut Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV. Racine, B. verfasserin aut Morrison, N. A. verfasserin aut Hutchings, I. verfasserin aut Milne, W. I. verfasserin aut Robertson, J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 593(1999), 1 vom: Dez., Seite 523-528 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:593 year:1999 number:1 month:12 pages:523-528 https://dx.doi.org/10.1557/PROC-593-523 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 593 1999 1 12 523-528 |
| spelling |
10.1557/PROC-593-523 doi (DE-627)SPR043070752 (DE-599)SPRPROC-593-523-e (SPR)PROC-593-523-e DE-627 ger DE-627 rakwb eng 670 ASE Ferrari, A. C. verfasserin aut Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV. Racine, B. verfasserin aut Morrison, N. A. verfasserin aut Hutchings, I. verfasserin aut Milne, W. I. verfasserin aut Robertson, J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 593(1999), 1 vom: Dez., Seite 523-528 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:593 year:1999 number:1 month:12 pages:523-528 https://dx.doi.org/10.1557/PROC-593-523 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 593 1999 1 12 523-528 |
| allfields_unstemmed |
10.1557/PROC-593-523 doi (DE-627)SPR043070752 (DE-599)SPRPROC-593-523-e (SPR)PROC-593-523-e DE-627 ger DE-627 rakwb eng 670 ASE Ferrari, A. C. verfasserin aut Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV. Racine, B. verfasserin aut Morrison, N. A. verfasserin aut Hutchings, I. verfasserin aut Milne, W. I. verfasserin aut Robertson, J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 593(1999), 1 vom: Dez., Seite 523-528 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:593 year:1999 number:1 month:12 pages:523-528 https://dx.doi.org/10.1557/PROC-593-523 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 593 1999 1 12 523-528 |
| allfieldsGer |
10.1557/PROC-593-523 doi (DE-627)SPR043070752 (DE-599)SPRPROC-593-523-e (SPR)PROC-593-523-e DE-627 ger DE-627 rakwb eng 670 ASE Ferrari, A. C. verfasserin aut Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV. Racine, B. verfasserin aut Morrison, N. A. verfasserin aut Hutchings, I. verfasserin aut Milne, W. I. verfasserin aut Robertson, J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 593(1999), 1 vom: Dez., Seite 523-528 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:593 year:1999 number:1 month:12 pages:523-528 https://dx.doi.org/10.1557/PROC-593-523 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 593 1999 1 12 523-528 |
| allfieldsSound |
10.1557/PROC-593-523 doi (DE-627)SPR043070752 (DE-599)SPRPROC-593-523-e (SPR)PROC-593-523-e DE-627 ger DE-627 rakwb eng 670 ASE Ferrari, A. C. verfasserin aut Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV. Racine, B. verfasserin aut Morrison, N. A. verfasserin aut Hutchings, I. verfasserin aut Milne, W. I. verfasserin aut Robertson, J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 593(1999), 1 vom: Dez., Seite 523-528 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:593 year:1999 number:1 month:12 pages:523-528 https://dx.doi.org/10.1557/PROC-593-523 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 593 1999 1 12 523-528 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 593(1999), 1 vom: Dez., Seite 523-528 volume:593 year:1999 number:1 month:12 pages:523-528 |
| sourceStr |
Enthalten in MRS online proceedings library 593(1999), 1 vom: Dez., Seite 523-528 volume:593 year:1999 number:1 month:12 pages:523-528 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Ferrari, A. C. @@aut@@ Racine, B. @@aut@@ Morrison, N. A. @@aut@@ Hutchings, I. @@aut@@ Milne, W. I. @@aut@@ Robertson, J. @@aut@@ |
| publishDateDaySort_date |
1999-12-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR043070752 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR043070752</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052727.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210208s1999 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-593-523</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR043070752</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-593-523-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-593-523-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ferrari, A. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1999</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Racine, B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Morrison, N. A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hutchings, I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Milne, W. I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Robertson, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">593(1999), 1 vom: Dez., Seite 523-528</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:593</subfield><subfield code="g">year:1999</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:523-528</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-593-523</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">593</subfield><subfield code="j">1999</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">523-528</subfield></datafield></record></collection>
|
| author |
Ferrari, A. C. |
| spellingShingle |
Ferrari, A. C. ddc 670 Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source |
| authorStr |
Ferrari, A. C. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source |
| ctrlnum |
(DE-627)SPR043070752 (DE-599)SPRPROC-593-523-e (SPR)PROC-593-523-e |
| title_full |
Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source |
| author_sort |
Ferrari, A. C. |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1999 |
| contenttype_str_mv |
txt |
| container_start_page |
523 |
| author_browse |
Ferrari, A. C. Racine, B. Morrison, N. A. Hutchings, I. Milne, W. I. Robertson, J. |
| container_volume |
593 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Ferrari, A. C. |
| doi_str_mv |
10.1557/PROC-593-523 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
amorphous carbon-silicon alloys prepared by a high plasma density source |
| title_auth |
Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source |
| abstract |
Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV. |
| abstractGer |
Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV. |
| abstract_unstemmed |
Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source |
| url |
https://dx.doi.org/10.1557/PROC-593-523 |
| remote_bool |
true |
| author2 |
Racine, B. Morrison, N. A. Hutchings, I. Milne, W. I. Robertson, J. |
| author2Str |
Racine, B. Morrison, N. A. Hutchings, I. Milne, W. I. Robertson, J. |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-593-523 |
| up_date |
2024-07-03T16:26:43.940Z |
| _version_ |
1803575889958535168 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR043070752</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052727.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210208s1999 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-593-523</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR043070752</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-593-523-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-593-523-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ferrari, A. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Amorphous Carbon-Silicon Alloys Prepared by a High Plasma Density Source</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1999</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-$ C_{1-x} %$ Si_{x} $:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-Cl.x$ Si_{x} $:H alloys with a good optical transparency and a band gap over 2 eV.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Racine, B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Morrison, N. A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hutchings, I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Milne, W. I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Robertson, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">593(1999), 1 vom: Dez., Seite 523-528</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:593</subfield><subfield code="g">year:1999</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:523-528</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-593-523</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">593</subfield><subfield code="j">1999</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">523-528</subfield></datafield></record></collection>
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7.399828 |