Spin Properties of Quantum wells Incorporating Semimagnetic Semiconductors
Abstract The electronic band-edge spectrum of magnetic semiconductor quantumwells containing a diluted magnetic semiconductor as one of the constituents is studied within the envelope-function formalism. Quantum wells with normal and mutually inverted band arrangements are considered. Thesp -d hydri...
Ausführliche Beschreibung
Autor*in: |
Malkova, N. [verfasserIn] Ekenberg, U. [verfasserIn] Thylen, L. [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2001 |
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Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 690(2001), 1 vom: Dez. |
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Übergeordnetes Werk: |
volume:690 ; year:2001 ; number:1 ; month:12 |
Links: |
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DOI / URN: |
10.1557/PROC-690-F1.91 |
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SPR043072348 |
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520 | |a Abstract The electronic band-edge spectrum of magnetic semiconductor quantumwells containing a diluted magnetic semiconductor as one of the constituents is studied within the envelope-function formalism. Quantum wells with normal and mutually inverted band arrangements are considered. Thesp -d hydribization between the baresp-electron states and thed-states of the Mn atoms is shown to lead to a spin-splitting effect. The spin-splitting effect is studied as a function of external magnetic field, well width, valence band offset and fraction of magnetic atoms. The results have bearing on the perspective for using the magnetic semicondutor structures in spin electronics. | ||
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10.1557/PROC-690-F1.91 doi (DE-627)SPR043072348 (DE-599)SPRPROC-690-F1.91-e (SPR)PROC-690-F1.91-e DE-627 ger DE-627 rakwb eng 670 ASE Malkova, N. verfasserin aut Spin Properties of Quantum wells Incorporating Semimagnetic Semiconductors 2001 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electronic band-edge spectrum of magnetic semiconductor quantumwells containing a diluted magnetic semiconductor as one of the constituents is studied within the envelope-function formalism. Quantum wells with normal and mutually inverted band arrangements are considered. Thesp -d hydribization between the baresp-electron states and thed-states of the Mn atoms is shown to lead to a spin-splitting effect. The spin-splitting effect is studied as a function of external magnetic field, well width, valence band offset and fraction of magnetic atoms. The results have bearing on the perspective for using the magnetic semicondutor structures in spin electronics. Ekenberg, U. verfasserin aut Thylen, L. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 690(2001), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:690 year:2001 number:1 month:12 https://dx.doi.org/10.1557/PROC-690-F1.91 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 690 2001 1 12 |
spelling |
10.1557/PROC-690-F1.91 doi (DE-627)SPR043072348 (DE-599)SPRPROC-690-F1.91-e (SPR)PROC-690-F1.91-e DE-627 ger DE-627 rakwb eng 670 ASE Malkova, N. verfasserin aut Spin Properties of Quantum wells Incorporating Semimagnetic Semiconductors 2001 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electronic band-edge spectrum of magnetic semiconductor quantumwells containing a diluted magnetic semiconductor as one of the constituents is studied within the envelope-function formalism. Quantum wells with normal and mutually inverted band arrangements are considered. Thesp -d hydribization between the baresp-electron states and thed-states of the Mn atoms is shown to lead to a spin-splitting effect. The spin-splitting effect is studied as a function of external magnetic field, well width, valence band offset and fraction of magnetic atoms. The results have bearing on the perspective for using the magnetic semicondutor structures in spin electronics. Ekenberg, U. verfasserin aut Thylen, L. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 690(2001), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:690 year:2001 number:1 month:12 https://dx.doi.org/10.1557/PROC-690-F1.91 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 690 2001 1 12 |
allfields_unstemmed |
10.1557/PROC-690-F1.91 doi (DE-627)SPR043072348 (DE-599)SPRPROC-690-F1.91-e (SPR)PROC-690-F1.91-e DE-627 ger DE-627 rakwb eng 670 ASE Malkova, N. verfasserin aut Spin Properties of Quantum wells Incorporating Semimagnetic Semiconductors 2001 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electronic band-edge spectrum of magnetic semiconductor quantumwells containing a diluted magnetic semiconductor as one of the constituents is studied within the envelope-function formalism. Quantum wells with normal and mutually inverted band arrangements are considered. Thesp -d hydribization between the baresp-electron states and thed-states of the Mn atoms is shown to lead to a spin-splitting effect. The spin-splitting effect is studied as a function of external magnetic field, well width, valence band offset and fraction of magnetic atoms. The results have bearing on the perspective for using the magnetic semicondutor structures in spin electronics. Ekenberg, U. verfasserin aut Thylen, L. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 690(2001), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:690 year:2001 number:1 month:12 https://dx.doi.org/10.1557/PROC-690-F1.91 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 690 2001 1 12 |
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10.1557/PROC-690-F1.91 doi (DE-627)SPR043072348 (DE-599)SPRPROC-690-F1.91-e (SPR)PROC-690-F1.91-e DE-627 ger DE-627 rakwb eng 670 ASE Malkova, N. verfasserin aut Spin Properties of Quantum wells Incorporating Semimagnetic Semiconductors 2001 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electronic band-edge spectrum of magnetic semiconductor quantumwells containing a diluted magnetic semiconductor as one of the constituents is studied within the envelope-function formalism. Quantum wells with normal and mutually inverted band arrangements are considered. Thesp -d hydribization between the baresp-electron states and thed-states of the Mn atoms is shown to lead to a spin-splitting effect. The spin-splitting effect is studied as a function of external magnetic field, well width, valence band offset and fraction of magnetic atoms. The results have bearing on the perspective for using the magnetic semicondutor structures in spin electronics. Ekenberg, U. verfasserin aut Thylen, L. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 690(2001), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:690 year:2001 number:1 month:12 https://dx.doi.org/10.1557/PROC-690-F1.91 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 690 2001 1 12 |
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10.1557/PROC-690-F1.91 doi (DE-627)SPR043072348 (DE-599)SPRPROC-690-F1.91-e (SPR)PROC-690-F1.91-e DE-627 ger DE-627 rakwb eng 670 ASE Malkova, N. verfasserin aut Spin Properties of Quantum wells Incorporating Semimagnetic Semiconductors 2001 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electronic band-edge spectrum of magnetic semiconductor quantumwells containing a diluted magnetic semiconductor as one of the constituents is studied within the envelope-function formalism. Quantum wells with normal and mutually inverted band arrangements are considered. Thesp -d hydribization between the baresp-electron states and thed-states of the Mn atoms is shown to lead to a spin-splitting effect. The spin-splitting effect is studied as a function of external magnetic field, well width, valence band offset and fraction of magnetic atoms. The results have bearing on the perspective for using the magnetic semicondutor structures in spin electronics. Ekenberg, U. verfasserin aut Thylen, L. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 690(2001), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:690 year:2001 number:1 month:12 https://dx.doi.org/10.1557/PROC-690-F1.91 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 690 2001 1 12 |
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Spin Properties of Quantum wells Incorporating Semimagnetic Semiconductors |
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Abstract The electronic band-edge spectrum of magnetic semiconductor quantumwells containing a diluted magnetic semiconductor as one of the constituents is studied within the envelope-function formalism. Quantum wells with normal and mutually inverted band arrangements are considered. Thesp -d hydribization between the baresp-electron states and thed-states of the Mn atoms is shown to lead to a spin-splitting effect. The spin-splitting effect is studied as a function of external magnetic field, well width, valence band offset and fraction of magnetic atoms. The results have bearing on the perspective for using the magnetic semicondutor structures in spin electronics. |
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Abstract The electronic band-edge spectrum of magnetic semiconductor quantumwells containing a diluted magnetic semiconductor as one of the constituents is studied within the envelope-function formalism. Quantum wells with normal and mutually inverted band arrangements are considered. Thesp -d hydribization between the baresp-electron states and thed-states of the Mn atoms is shown to lead to a spin-splitting effect. The spin-splitting effect is studied as a function of external magnetic field, well width, valence band offset and fraction of magnetic atoms. The results have bearing on the perspective for using the magnetic semicondutor structures in spin electronics. |
abstract_unstemmed |
Abstract The electronic band-edge spectrum of magnetic semiconductor quantumwells containing a diluted magnetic semiconductor as one of the constituents is studied within the envelope-function formalism. Quantum wells with normal and mutually inverted band arrangements are considered. Thesp -d hydribization between the baresp-electron states and thed-states of the Mn atoms is shown to lead to a spin-splitting effect. The spin-splitting effect is studied as a function of external magnetic field, well width, valence band offset and fraction of magnetic atoms. The results have bearing on the perspective for using the magnetic semicondutor structures in spin electronics. |
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