Epitaxial Growth and Structure of Thin Single Crystal γ-$ Al_{2} %$ O_{3} $ Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum
Abstract We have characterized the structure of epitaxial $ Al_{2} %$ O_{3} $ films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single c...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Hong, M. [verfasserIn] Kortan, A.R. [verfasserIn] Kwo, J. [verfasserIn] Mannaerts, J.P. [verfasserIn] Wu, S.Y. [verfasserIn] |
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2003 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 811(2003), 1 vom: Dez., Seite 369-374 |
|---|---|
| Übergeordnetes Werk: |
volume:811 ; year:2003 ; number:1 ; month:12 ; pages:369-374 |
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| DOI / URN: |
10.1557/PROC-811-D9.5 |
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| 245 | 1 | 0 | |a Epitaxial Growth and Structure of Thin Single Crystal γ-$ Al_{2} %$ O_{3} $ Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum |
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| 520 | |a Abstract We have characterized the structure of epitaxial $ Al_{2} %$ O_{3} $ films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single crystal x-ray diffraction with the initial epitaxial growth observed by in-situ reflection high energy electron diffraction. The $ Al_{2} %$ O_{3} $ films grow in the cubic γ-phase with a very uniform thickness, and a high structural perfection. The <111> axes of the film and the Si substrate are well aligned. A mosaic scan of the $ Al_{2} %$ O_{3} $ (222) peak (with no in-plane component) finds a 0.3 degree (or 18') spread. All three unit cell vectors of the film and the substrate are parallel, but the in-plane cone scans of the {004} and {044} diffraction peaks about the surface normal find a ±3 degree film in-plane rotation with respect to the substrate surface orientation. | ||
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| 700 | 1 | |a Wu, S.Y. |e verfasserin |4 aut | |
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10.1557/PROC-811-D9.5 doi (DE-627)SPR043162703 (DE-599)SPRPROC-811-D9.5-e (SPR)PROC-811-D9.5-e DE-627 ger DE-627 rakwb eng 670 ASE Hong, M. verfasserin aut Epitaxial Growth and Structure of Thin Single Crystal γ-$ Al_{2} %$ O_{3} $ Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have characterized the structure of epitaxial $ Al_{2} %$ O_{3} $ films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single crystal x-ray diffraction with the initial epitaxial growth observed by in-situ reflection high energy electron diffraction. The $ Al_{2} %$ O_{3} $ films grow in the cubic γ-phase with a very uniform thickness, and a high structural perfection. The <111> axes of the film and the Si substrate are well aligned. A mosaic scan of the $ Al_{2} %$ O_{3} $ (222) peak (with no in-plane component) finds a 0.3 degree (or 18') spread. All three unit cell vectors of the film and the substrate are parallel, but the in-plane cone scans of the {004} and {044} diffraction peaks about the surface normal find a ±3 degree film in-plane rotation with respect to the substrate surface orientation. Kortan, A.R. verfasserin aut Kwo, J. verfasserin aut Mannaerts, J.P. verfasserin aut Wu, S.Y. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 811(2003), 1 vom: Dez., Seite 369-374 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:811 year:2003 number:1 month:12 pages:369-374 https://dx.doi.org/10.1557/PROC-811-D9.5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 811 2003 1 12 369-374 |
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10.1557/PROC-811-D9.5 doi (DE-627)SPR043162703 (DE-599)SPRPROC-811-D9.5-e (SPR)PROC-811-D9.5-e DE-627 ger DE-627 rakwb eng 670 ASE Hong, M. verfasserin aut Epitaxial Growth and Structure of Thin Single Crystal γ-$ Al_{2} %$ O_{3} $ Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have characterized the structure of epitaxial $ Al_{2} %$ O_{3} $ films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single crystal x-ray diffraction with the initial epitaxial growth observed by in-situ reflection high energy electron diffraction. The $ Al_{2} %$ O_{3} $ films grow in the cubic γ-phase with a very uniform thickness, and a high structural perfection. The <111> axes of the film and the Si substrate are well aligned. A mosaic scan of the $ Al_{2} %$ O_{3} $ (222) peak (with no in-plane component) finds a 0.3 degree (or 18') spread. All three unit cell vectors of the film and the substrate are parallel, but the in-plane cone scans of the {004} and {044} diffraction peaks about the surface normal find a ±3 degree film in-plane rotation with respect to the substrate surface orientation. Kortan, A.R. verfasserin aut Kwo, J. verfasserin aut Mannaerts, J.P. verfasserin aut Wu, S.Y. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 811(2003), 1 vom: Dez., Seite 369-374 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:811 year:2003 number:1 month:12 pages:369-374 https://dx.doi.org/10.1557/PROC-811-D9.5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 811 2003 1 12 369-374 |
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10.1557/PROC-811-D9.5 doi (DE-627)SPR043162703 (DE-599)SPRPROC-811-D9.5-e (SPR)PROC-811-D9.5-e DE-627 ger DE-627 rakwb eng 670 ASE Hong, M. verfasserin aut Epitaxial Growth and Structure of Thin Single Crystal γ-$ Al_{2} %$ O_{3} $ Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have characterized the structure of epitaxial $ Al_{2} %$ O_{3} $ films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single crystal x-ray diffraction with the initial epitaxial growth observed by in-situ reflection high energy electron diffraction. The $ Al_{2} %$ O_{3} $ films grow in the cubic γ-phase with a very uniform thickness, and a high structural perfection. The <111> axes of the film and the Si substrate are well aligned. A mosaic scan of the $ Al_{2} %$ O_{3} $ (222) peak (with no in-plane component) finds a 0.3 degree (or 18') spread. All three unit cell vectors of the film and the substrate are parallel, but the in-plane cone scans of the {004} and {044} diffraction peaks about the surface normal find a ±3 degree film in-plane rotation with respect to the substrate surface orientation. Kortan, A.R. verfasserin aut Kwo, J. verfasserin aut Mannaerts, J.P. verfasserin aut Wu, S.Y. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 811(2003), 1 vom: Dez., Seite 369-374 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:811 year:2003 number:1 month:12 pages:369-374 https://dx.doi.org/10.1557/PROC-811-D9.5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 811 2003 1 12 369-374 |
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10.1557/PROC-811-D9.5 doi (DE-627)SPR043162703 (DE-599)SPRPROC-811-D9.5-e (SPR)PROC-811-D9.5-e DE-627 ger DE-627 rakwb eng 670 ASE Hong, M. verfasserin aut Epitaxial Growth and Structure of Thin Single Crystal γ-$ Al_{2} %$ O_{3} $ Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have characterized the structure of epitaxial $ Al_{2} %$ O_{3} $ films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single crystal x-ray diffraction with the initial epitaxial growth observed by in-situ reflection high energy electron diffraction. The $ Al_{2} %$ O_{3} $ films grow in the cubic γ-phase with a very uniform thickness, and a high structural perfection. The <111> axes of the film and the Si substrate are well aligned. A mosaic scan of the $ Al_{2} %$ O_{3} $ (222) peak (with no in-plane component) finds a 0.3 degree (or 18') spread. All three unit cell vectors of the film and the substrate are parallel, but the in-plane cone scans of the {004} and {044} diffraction peaks about the surface normal find a ±3 degree film in-plane rotation with respect to the substrate surface orientation. Kortan, A.R. verfasserin aut Kwo, J. verfasserin aut Mannaerts, J.P. verfasserin aut Wu, S.Y. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 811(2003), 1 vom: Dez., Seite 369-374 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:811 year:2003 number:1 month:12 pages:369-374 https://dx.doi.org/10.1557/PROC-811-D9.5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 811 2003 1 12 369-374 |
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10.1557/PROC-811-D9.5 doi (DE-627)SPR043162703 (DE-599)SPRPROC-811-D9.5-e (SPR)PROC-811-D9.5-e DE-627 ger DE-627 rakwb eng 670 ASE Hong, M. verfasserin aut Epitaxial Growth and Structure of Thin Single Crystal γ-$ Al_{2} %$ O_{3} $ Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have characterized the structure of epitaxial $ Al_{2} %$ O_{3} $ films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single crystal x-ray diffraction with the initial epitaxial growth observed by in-situ reflection high energy electron diffraction. The $ Al_{2} %$ O_{3} $ films grow in the cubic γ-phase with a very uniform thickness, and a high structural perfection. The <111> axes of the film and the Si substrate are well aligned. A mosaic scan of the $ Al_{2} %$ O_{3} $ (222) peak (with no in-plane component) finds a 0.3 degree (or 18') spread. All three unit cell vectors of the film and the substrate are parallel, but the in-plane cone scans of the {004} and {044} diffraction peaks about the surface normal find a ±3 degree film in-plane rotation with respect to the substrate surface orientation. Kortan, A.R. verfasserin aut Kwo, J. verfasserin aut Mannaerts, J.P. verfasserin aut Wu, S.Y. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 811(2003), 1 vom: Dez., Seite 369-374 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:811 year:2003 number:1 month:12 pages:369-374 https://dx.doi.org/10.1557/PROC-811-D9.5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 811 2003 1 12 369-374 |
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epitaxial growth and structure of thin single crystal γ-$ al_{2} %$ o_{3} $ films on si (111) using e-beam evaporation of sapphire in ultra-high vacuum |
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Epitaxial Growth and Structure of Thin Single Crystal γ-$ Al_{2} %$ O_{3} $ Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum |
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Abstract We have characterized the structure of epitaxial $ Al_{2} %$ O_{3} $ films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single crystal x-ray diffraction with the initial epitaxial growth observed by in-situ reflection high energy electron diffraction. The $ Al_{2} %$ O_{3} $ films grow in the cubic γ-phase with a very uniform thickness, and a high structural perfection. The <111> axes of the film and the Si substrate are well aligned. A mosaic scan of the $ Al_{2} %$ O_{3} $ (222) peak (with no in-plane component) finds a 0.3 degree (or 18') spread. All three unit cell vectors of the film and the substrate are parallel, but the in-plane cone scans of the {004} and {044} diffraction peaks about the surface normal find a ±3 degree film in-plane rotation with respect to the substrate surface orientation. |
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Abstract We have characterized the structure of epitaxial $ Al_{2} %$ O_{3} $ films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single crystal x-ray diffraction with the initial epitaxial growth observed by in-situ reflection high energy electron diffraction. The $ Al_{2} %$ O_{3} $ films grow in the cubic γ-phase with a very uniform thickness, and a high structural perfection. The <111> axes of the film and the Si substrate are well aligned. A mosaic scan of the $ Al_{2} %$ O_{3} $ (222) peak (with no in-plane component) finds a 0.3 degree (or 18') spread. All three unit cell vectors of the film and the substrate are parallel, but the in-plane cone scans of the {004} and {044} diffraction peaks about the surface normal find a ±3 degree film in-plane rotation with respect to the substrate surface orientation. |
| abstract_unstemmed |
Abstract We have characterized the structure of epitaxial $ Al_{2} %$ O_{3} $ films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single crystal x-ray diffraction with the initial epitaxial growth observed by in-situ reflection high energy electron diffraction. The $ Al_{2} %$ O_{3} $ films grow in the cubic γ-phase with a very uniform thickness, and a high structural perfection. The <111> axes of the film and the Si substrate are well aligned. A mosaic scan of the $ Al_{2} %$ O_{3} $ (222) peak (with no in-plane component) finds a 0.3 degree (or 18') spread. All three unit cell vectors of the film and the substrate are parallel, but the in-plane cone scans of the {004} and {044} diffraction peaks about the surface normal find a ±3 degree film in-plane rotation with respect to the substrate surface orientation. |
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Epitaxial Growth and Structure of Thin Single Crystal γ-$ Al_{2} %$ O_{3} $ Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum |
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https://dx.doi.org/10.1557/PROC-811-D9.5 |
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Kortan, A.R. Kwo, J. Mannaerts, J.P. Wu, S.Y. |
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2024-07-03T16:57:23.790Z |
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