Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions
Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growt...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Nishihara, Tappei [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Schlagwörter: |
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| Anmerkung: |
© The Minerals, Metals & Materials Society 2021 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 50(2021), 3 vom: 09. Jan., Seite 1474-1481 |
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| Übergeordnetes Werk: |
volume:50 ; year:2021 ; number:3 ; day:09 ; month:01 ; pages:1474-1481 |
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| DOI / URN: |
10.1007/s11664-020-08702-w |
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SPR043215130 |
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| 520 | |a Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. | ||
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| 650 | 4 | |a crystal growth |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Onishi, Kohei |4 aut | |
| 700 | 1 | |a Ohshita, Yoshio |4 aut | |
| 700 | 1 | |a Ogura, Atsushi |4 aut | |
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10.1007/s11664-020-08702-w doi (DE-627)SPR043215130 (SPR)s11664-020-08702-w-e DE-627 ger DE-627 rakwb eng Nishihara, Tappei verfasserin (orcid)0000-0002-2596-5509 aut Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2021 Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. Cz-silicon (dpeaa)DE-He213 TEM (dpeaa)DE-He213 oxygen precipitation (dpeaa)DE-He213 solar cell (dpeaa)DE-He213 crystal growth (dpeaa)DE-He213 Onishi, Kohei aut Ohshita, Yoshio aut Ogura, Atsushi aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 50(2021), 3 vom: 09. Jan., Seite 1474-1481 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:50 year:2021 number:3 day:09 month:01 pages:1474-1481 https://dx.doi.org/10.1007/s11664-020-08702-w lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 50 2021 3 09 01 1474-1481 |
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10.1007/s11664-020-08702-w doi (DE-627)SPR043215130 (SPR)s11664-020-08702-w-e DE-627 ger DE-627 rakwb eng Nishihara, Tappei verfasserin (orcid)0000-0002-2596-5509 aut Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2021 Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. Cz-silicon (dpeaa)DE-He213 TEM (dpeaa)DE-He213 oxygen precipitation (dpeaa)DE-He213 solar cell (dpeaa)DE-He213 crystal growth (dpeaa)DE-He213 Onishi, Kohei aut Ohshita, Yoshio aut Ogura, Atsushi aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 50(2021), 3 vom: 09. Jan., Seite 1474-1481 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:50 year:2021 number:3 day:09 month:01 pages:1474-1481 https://dx.doi.org/10.1007/s11664-020-08702-w lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 50 2021 3 09 01 1474-1481 |
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10.1007/s11664-020-08702-w doi (DE-627)SPR043215130 (SPR)s11664-020-08702-w-e DE-627 ger DE-627 rakwb eng Nishihara, Tappei verfasserin (orcid)0000-0002-2596-5509 aut Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2021 Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. Cz-silicon (dpeaa)DE-He213 TEM (dpeaa)DE-He213 oxygen precipitation (dpeaa)DE-He213 solar cell (dpeaa)DE-He213 crystal growth (dpeaa)DE-He213 Onishi, Kohei aut Ohshita, Yoshio aut Ogura, Atsushi aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 50(2021), 3 vom: 09. Jan., Seite 1474-1481 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:50 year:2021 number:3 day:09 month:01 pages:1474-1481 https://dx.doi.org/10.1007/s11664-020-08702-w lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 50 2021 3 09 01 1474-1481 |
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10.1007/s11664-020-08702-w doi (DE-627)SPR043215130 (SPR)s11664-020-08702-w-e DE-627 ger DE-627 rakwb eng Nishihara, Tappei verfasserin (orcid)0000-0002-2596-5509 aut Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2021 Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. Cz-silicon (dpeaa)DE-He213 TEM (dpeaa)DE-He213 oxygen precipitation (dpeaa)DE-He213 solar cell (dpeaa)DE-He213 crystal growth (dpeaa)DE-He213 Onishi, Kohei aut Ohshita, Yoshio aut Ogura, Atsushi aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 50(2021), 3 vom: 09. Jan., Seite 1474-1481 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:50 year:2021 number:3 day:09 month:01 pages:1474-1481 https://dx.doi.org/10.1007/s11664-020-08702-w lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 50 2021 3 09 01 1474-1481 |
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10.1007/s11664-020-08702-w doi (DE-627)SPR043215130 (SPR)s11664-020-08702-w-e DE-627 ger DE-627 rakwb eng Nishihara, Tappei verfasserin (orcid)0000-0002-2596-5509 aut Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2021 Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. Cz-silicon (dpeaa)DE-He213 TEM (dpeaa)DE-He213 oxygen precipitation (dpeaa)DE-He213 solar cell (dpeaa)DE-He213 crystal growth (dpeaa)DE-He213 Onishi, Kohei aut Ohshita, Yoshio aut Ogura, Atsushi aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 50(2021), 3 vom: 09. Jan., Seite 1474-1481 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:50 year:2021 number:3 day:09 month:01 pages:1474-1481 https://dx.doi.org/10.1007/s11664-020-08702-w lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 50 2021 3 09 01 1474-1481 |
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Nishihara, Tappei @@aut@@ Onishi, Kohei @@aut@@ Ohshita, Yoshio @@aut@@ Ogura, Atsushi @@aut@@ |
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| author |
Nishihara, Tappei |
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Nishihara, Tappei misc Cz-silicon misc TEM misc oxygen precipitation misc solar cell misc crystal growth Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions |
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Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions Cz-silicon (dpeaa)DE-He213 TEM (dpeaa)DE-He213 oxygen precipitation (dpeaa)DE-He213 solar cell (dpeaa)DE-He213 crystal growth (dpeaa)DE-He213 |
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misc Cz-silicon misc TEM misc oxygen precipitation misc solar cell misc crystal growth |
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misc Cz-silicon misc TEM misc oxygen precipitation misc solar cell misc crystal growth |
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misc Cz-silicon misc TEM misc oxygen precipitation misc solar cell misc crystal growth |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions |
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Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions |
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Nishihara, Tappei |
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Journal of electronic materials |
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Nishihara, Tappei Onishi, Kohei Ohshita, Yoshio Ogura, Atsushi |
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Elektronische Aufsätze |
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Nishihara, Tappei |
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10.1007/s11664-020-08702-w |
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oxygen precipitation behavior in n-type cz-si related to carbon concentration and crystal growth conditions |
| title_auth |
Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions |
| abstract |
Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. © The Minerals, Metals & Materials Society 2021 |
| abstractGer |
Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. © The Minerals, Metals & Materials Society 2021 |
| abstract_unstemmed |
Abstract The behavior of oxide precipitates during solar cell fabrication processes and the resulting effect on device performance have been investigated by transmission electron microscopy (TEM) observation. Samples were prepared with different carbon concentration and under different crystal growth conditions, namely using the conventional and an advanced process. The density of oxide precipitates increased monotonically with the carbon concentration, while the cell efficiency improved with decreasing oxygen precipitate density. When the carbon concentration was reduced to below $ 10^{16} $ $ cm^{−3} $, the oxide precipitates grew largely and dislocations were introduced. TEM observations confirmed that the morphology of the oxide precipitates clearly differed depending on the crystal growth conditions. Precipitates grown in platelet form introduced high density dislocations in their surroundings, while the dislocation density was relatively lower around polyhedral-type precipitates. These results thus reveal that oxygen precipitation can be controlled by varying the crystal growth conditions, possibly contributing to the production of high-efficiency solar cells. © The Minerals, Metals & Materials Society 2021 |
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Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions |
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https://dx.doi.org/10.1007/s11664-020-08702-w |
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Onishi, Kohei Ohshita, Yoshio Ogura, Atsushi |
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10.1007/s11664-020-08702-w |
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