Nano-Scale Devices Embedded in Self-Supporting Polymer Foils
Abstract Self-supporting polymer foils of several micrometer thickness have been structured using irradiation by fast heavy ions and subsequent etching. Very deep, well defined nanostructures can be prepared in this way. These can then be used as templates for semiconductor deposition and the fabric...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Könenkamp, R. [verfasserIn] Chen, J. [verfasserIn] Klaumuenzer, S. [verfasserIn] Engelhardt, R. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2004 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 814(2004), 1 vom: 01. Okt., Seite 272-277 |
|---|---|
| Übergeordnetes Werk: |
volume:814 ; year:2004 ; number:1 ; day:01 ; month:10 ; pages:272-277 |
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| DOI / URN: |
10.1557/PROC-814-I7.4 |
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| 520 | |a Abstract Self-supporting polymer foils of several micrometer thickness have been structured using irradiation by fast heavy ions and subsequent etching. Very deep, well defined nanostructures can be prepared in this way. These can then be used as templates for semiconductor deposition and the fabrication of robust embedded electronic devices. Electron microscopy shows voidfilling poly-crystalline growth in the polymer films. Electrical experiments show low sensitivity when mechanical forces are exerted on the foil, suggesting that the embedded nanodevices can be used as reliable sensors in applications with considerable bending of the foils. Two different transistor arrangements will be discussed. | ||
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10.1557/PROC-814-I7.4 doi (DE-627)SPR043265758 (DE-599)SPRPROC-814-I7.4-e (SPR)PROC-814-I7.4-e DE-627 ger DE-627 rakwb eng 670 ASE Könenkamp, R. verfasserin aut Nano-Scale Devices Embedded in Self-Supporting Polymer Foils 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Self-supporting polymer foils of several micrometer thickness have been structured using irradiation by fast heavy ions and subsequent etching. Very deep, well defined nanostructures can be prepared in this way. These can then be used as templates for semiconductor deposition and the fabrication of robust embedded electronic devices. Electron microscopy shows voidfilling poly-crystalline growth in the polymer films. Electrical experiments show low sensitivity when mechanical forces are exerted on the foil, suggesting that the embedded nanodevices can be used as reliable sensors in applications with considerable bending of the foils. Two different transistor arrangements will be discussed. Chen, J. verfasserin aut Klaumuenzer, S. verfasserin aut Engelhardt, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 814(2004), 1 vom: 01. Okt., Seite 272-277 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:814 year:2004 number:1 day:01 month:10 pages:272-277 https://dx.doi.org/10.1557/PROC-814-I7.4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 814 2004 1 01 10 272-277 |
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Abstract Self-supporting polymer foils of several micrometer thickness have been structured using irradiation by fast heavy ions and subsequent etching. Very deep, well defined nanostructures can be prepared in this way. These can then be used as templates for semiconductor deposition and the fabrication of robust embedded electronic devices. Electron microscopy shows voidfilling poly-crystalline growth in the polymer films. Electrical experiments show low sensitivity when mechanical forces are exerted on the foil, suggesting that the embedded nanodevices can be used as reliable sensors in applications with considerable bending of the foils. Two different transistor arrangements will be discussed. |
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Abstract Self-supporting polymer foils of several micrometer thickness have been structured using irradiation by fast heavy ions and subsequent etching. Very deep, well defined nanostructures can be prepared in this way. These can then be used as templates for semiconductor deposition and the fabrication of robust embedded electronic devices. Electron microscopy shows voidfilling poly-crystalline growth in the polymer films. Electrical experiments show low sensitivity when mechanical forces are exerted on the foil, suggesting that the embedded nanodevices can be used as reliable sensors in applications with considerable bending of the foils. Two different transistor arrangements will be discussed. |
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Abstract Self-supporting polymer foils of several micrometer thickness have been structured using irradiation by fast heavy ions and subsequent etching. Very deep, well defined nanostructures can be prepared in this way. These can then be used as templates for semiconductor deposition and the fabrication of robust embedded electronic devices. Electron microscopy shows voidfilling poly-crystalline growth in the polymer films. Electrical experiments show low sensitivity when mechanical forces are exerted on the foil, suggesting that the embedded nanodevices can be used as reliable sensors in applications with considerable bending of the foils. Two different transistor arrangements will be discussed. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR043265758</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112053154.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210222s2004 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-814-I7.4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR043265758</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-814-I7.4-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-814-I7.4-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Könenkamp, R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nano-Scale Devices Embedded in Self-Supporting Polymer Foils</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2004</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Self-supporting polymer foils of several micrometer thickness have been structured using irradiation by fast heavy ions and subsequent etching. Very deep, well defined nanostructures can be prepared in this way. These can then be used as templates for semiconductor deposition and the fabrication of robust embedded electronic devices. Electron microscopy shows voidfilling poly-crystalline growth in the polymer films. Electrical experiments show low sensitivity when mechanical forces are exerted on the foil, suggesting that the embedded nanodevices can be used as reliable sensors in applications with considerable bending of the foils. Two different transistor arrangements will be discussed.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chen, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Klaumuenzer, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Engelhardt, R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">814(2004), 1 vom: 01. Okt., Seite 272-277</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:814</subfield><subfield code="g">year:2004</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:272-277</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-814-I7.4</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">814</subfield><subfield code="j">2004</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">10</subfield><subfield code="h">272-277</subfield></datafield></record></collection>
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