Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs
Abstract GaN has a wide band gap energy, high electron mobility, high saturation velocity, and excellent thermal properties making it a promising material for high power and high frequency electronic devices. The development of enhancement mode GaN metal oxide semiconductor (MOS) transistors has bee...
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| Autor*in: |
Saripalli, Y.N. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2005 |
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| Anmerkung: |
© The Materials Research Society 2006 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Springer International Publishing, 1998, 892(2005), 1 vom: Dez. |
|---|---|
| Übergeordnetes Werk: |
volume:892 ; year:2005 ; number:1 ; month:12 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-0892-FF16-01 |
|---|
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SPR043292860 |
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| 520 | |a Abstract GaN has a wide band gap energy, high electron mobility, high saturation velocity, and excellent thermal properties making it a promising material for high power and high frequency electronic devices. The development of enhancement mode GaN metal oxide semiconductor (MOS) transistors has been elusive due to the non-availability of a good insulating gate dielectric and the difficulty in forming of ohmic source/drain regions. Ion-implantation of dopants causes severe lattice damage requiring a high temperature post-implant anneal and has not been a successful method to obtain acceptable low-resistance source/drain regions. At the same time, gate dielectrics for most compound semiconductors, in addition to difficulties in minimizing the density of interface states which pin the Fermi level by inducing trap levels in the midgap, are degraded by instabilities as a result of high temperature annealing. The paper presents the development ohmic source/drain contacts for GaN MOSFETs by selected area epitaxial regrowth. Re-growth of GaN on patterned substrates by metal-organic chemical vapor deposition (MOCVD) employs a growth regime to decrease the enhanced growth rates and island formation that result from the diffusion of precursors to the selected area. The enhanced growth rate is 4.5μm/hr compared to 0.5μm/hr of the as-grown GaN on the unpatterned substrate. The enhanced growth rate also results in heavily porous GaN. Selected area growth, device processing, the material and device characterization results will be presented. In particular the selected area growth of doped contacts in the 800°C temperature range leads to superior morphology and contact resistance as compared to similar contacts grown at 1060°C. The contact resistivity of the n+ re-growth region measured was ∼2×$ 10^{−4} $ Ω-m and the morphology of the re-grown region was comparable to the as-grown GaN with an RMS roughness ∼1.4nm. The success of fabricating low temperature contacts for GaN enhancement mode MOS transistors is a critical step in fabricating these devices opening new applications. | ||
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| 700 | 1 | |a Jin, Y. |4 aut | |
| 700 | 1 | |a Long, J.P. |4 aut | |
| 700 | 1 | |a Grenko, J.A. |4 aut | |
| 700 | 1 | |a Dandu, K. |4 aut | |
| 700 | 1 | |a Johnson, M.A.L |4 aut | |
| 700 | 1 | |a Barlage, D.W. |4 aut | |
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10.1557/PROC-0892-FF16-01 doi (DE-627)SPR043292860 (SPR)PROC-0892-FF16-01-e DE-627 ger DE-627 rakwb eng 670 VZ Saripalli, Y.N. verfasserin aut Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Materials Research Society 2006 Abstract GaN has a wide band gap energy, high electron mobility, high saturation velocity, and excellent thermal properties making it a promising material for high power and high frequency electronic devices. The development of enhancement mode GaN metal oxide semiconductor (MOS) transistors has been elusive due to the non-availability of a good insulating gate dielectric and the difficulty in forming of ohmic source/drain regions. Ion-implantation of dopants causes severe lattice damage requiring a high temperature post-implant anneal and has not been a successful method to obtain acceptable low-resistance source/drain regions. At the same time, gate dielectrics for most compound semiconductors, in addition to difficulties in minimizing the density of interface states which pin the Fermi level by inducing trap levels in the midgap, are degraded by instabilities as a result of high temperature annealing. The paper presents the development ohmic source/drain contacts for GaN MOSFETs by selected area epitaxial regrowth. Re-growth of GaN on patterned substrates by metal-organic chemical vapor deposition (MOCVD) employs a growth regime to decrease the enhanced growth rates and island formation that result from the diffusion of precursors to the selected area. The enhanced growth rate is 4.5μm/hr compared to 0.5μm/hr of the as-grown GaN on the unpatterned substrate. The enhanced growth rate also results in heavily porous GaN. Selected area growth, device processing, the material and device characterization results will be presented. In particular the selected area growth of doped contacts in the 800°C temperature range leads to superior morphology and contact resistance as compared to similar contacts grown at 1060°C. The contact resistivity of the n+ re-growth region measured was ∼2×$ 10^{−4} $ Ω-m and the morphology of the re-grown region was comparable to the as-grown GaN with an RMS roughness ∼1.4nm. The success of fabricating low temperature contacts for GaN enhancement mode MOS transistors is a critical step in fabricating these devices opening new applications. Zeng, C. aut Jin, Y. aut Long, J.P. aut Grenko, J.A. aut Dandu, K. aut Johnson, M.A.L aut Barlage, D.W. aut Enthalten in MRS online proceedings library Springer International Publishing, 1998 892(2005), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:892 year:2005 number:1 month:12 https://dx.doi.org/10.1557/PROC-0892-FF16-01 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_2005 AR 892 2005 1 12 |
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10.1557/PROC-0892-FF16-01 doi (DE-627)SPR043292860 (SPR)PROC-0892-FF16-01-e DE-627 ger DE-627 rakwb eng 670 VZ Saripalli, Y.N. verfasserin aut Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Materials Research Society 2006 Abstract GaN has a wide band gap energy, high electron mobility, high saturation velocity, and excellent thermal properties making it a promising material for high power and high frequency electronic devices. The development of enhancement mode GaN metal oxide semiconductor (MOS) transistors has been elusive due to the non-availability of a good insulating gate dielectric and the difficulty in forming of ohmic source/drain regions. Ion-implantation of dopants causes severe lattice damage requiring a high temperature post-implant anneal and has not been a successful method to obtain acceptable low-resistance source/drain regions. At the same time, gate dielectrics for most compound semiconductors, in addition to difficulties in minimizing the density of interface states which pin the Fermi level by inducing trap levels in the midgap, are degraded by instabilities as a result of high temperature annealing. The paper presents the development ohmic source/drain contacts for GaN MOSFETs by selected area epitaxial regrowth. Re-growth of GaN on patterned substrates by metal-organic chemical vapor deposition (MOCVD) employs a growth regime to decrease the enhanced growth rates and island formation that result from the diffusion of precursors to the selected area. The enhanced growth rate is 4.5μm/hr compared to 0.5μm/hr of the as-grown GaN on the unpatterned substrate. The enhanced growth rate also results in heavily porous GaN. Selected area growth, device processing, the material and device characterization results will be presented. In particular the selected area growth of doped contacts in the 800°C temperature range leads to superior morphology and contact resistance as compared to similar contacts grown at 1060°C. The contact resistivity of the n+ re-growth region measured was ∼2×$ 10^{−4} $ Ω-m and the morphology of the re-grown region was comparable to the as-grown GaN with an RMS roughness ∼1.4nm. The success of fabricating low temperature contacts for GaN enhancement mode MOS transistors is a critical step in fabricating these devices opening new applications. Zeng, C. aut Jin, Y. aut Long, J.P. aut Grenko, J.A. aut Dandu, K. aut Johnson, M.A.L aut Barlage, D.W. aut Enthalten in MRS online proceedings library Springer International Publishing, 1998 892(2005), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:892 year:2005 number:1 month:12 https://dx.doi.org/10.1557/PROC-0892-FF16-01 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_2005 AR 892 2005 1 12 |
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10.1557/PROC-0892-FF16-01 doi (DE-627)SPR043292860 (SPR)PROC-0892-FF16-01-e DE-627 ger DE-627 rakwb eng 670 VZ Saripalli, Y.N. verfasserin aut Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Materials Research Society 2006 Abstract GaN has a wide band gap energy, high electron mobility, high saturation velocity, and excellent thermal properties making it a promising material for high power and high frequency electronic devices. The development of enhancement mode GaN metal oxide semiconductor (MOS) transistors has been elusive due to the non-availability of a good insulating gate dielectric and the difficulty in forming of ohmic source/drain regions. Ion-implantation of dopants causes severe lattice damage requiring a high temperature post-implant anneal and has not been a successful method to obtain acceptable low-resistance source/drain regions. At the same time, gate dielectrics for most compound semiconductors, in addition to difficulties in minimizing the density of interface states which pin the Fermi level by inducing trap levels in the midgap, are degraded by instabilities as a result of high temperature annealing. The paper presents the development ohmic source/drain contacts for GaN MOSFETs by selected area epitaxial regrowth. Re-growth of GaN on patterned substrates by metal-organic chemical vapor deposition (MOCVD) employs a growth regime to decrease the enhanced growth rates and island formation that result from the diffusion of precursors to the selected area. The enhanced growth rate is 4.5μm/hr compared to 0.5μm/hr of the as-grown GaN on the unpatterned substrate. The enhanced growth rate also results in heavily porous GaN. Selected area growth, device processing, the material and device characterization results will be presented. In particular the selected area growth of doped contacts in the 800°C temperature range leads to superior morphology and contact resistance as compared to similar contacts grown at 1060°C. The contact resistivity of the n+ re-growth region measured was ∼2×$ 10^{−4} $ Ω-m and the morphology of the re-grown region was comparable to the as-grown GaN with an RMS roughness ∼1.4nm. The success of fabricating low temperature contacts for GaN enhancement mode MOS transistors is a critical step in fabricating these devices opening new applications. Zeng, C. aut Jin, Y. aut Long, J.P. aut Grenko, J.A. aut Dandu, K. aut Johnson, M.A.L aut Barlage, D.W. aut Enthalten in MRS online proceedings library Springer International Publishing, 1998 892(2005), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:892 year:2005 number:1 month:12 https://dx.doi.org/10.1557/PROC-0892-FF16-01 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_2005 AR 892 2005 1 12 |
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10.1557/PROC-0892-FF16-01 doi (DE-627)SPR043292860 (SPR)PROC-0892-FF16-01-e DE-627 ger DE-627 rakwb eng 670 VZ Saripalli, Y.N. verfasserin aut Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Materials Research Society 2006 Abstract GaN has a wide band gap energy, high electron mobility, high saturation velocity, and excellent thermal properties making it a promising material for high power and high frequency electronic devices. The development of enhancement mode GaN metal oxide semiconductor (MOS) transistors has been elusive due to the non-availability of a good insulating gate dielectric and the difficulty in forming of ohmic source/drain regions. Ion-implantation of dopants causes severe lattice damage requiring a high temperature post-implant anneal and has not been a successful method to obtain acceptable low-resistance source/drain regions. At the same time, gate dielectrics for most compound semiconductors, in addition to difficulties in minimizing the density of interface states which pin the Fermi level by inducing trap levels in the midgap, are degraded by instabilities as a result of high temperature annealing. The paper presents the development ohmic source/drain contacts for GaN MOSFETs by selected area epitaxial regrowth. Re-growth of GaN on patterned substrates by metal-organic chemical vapor deposition (MOCVD) employs a growth regime to decrease the enhanced growth rates and island formation that result from the diffusion of precursors to the selected area. The enhanced growth rate is 4.5μm/hr compared to 0.5μm/hr of the as-grown GaN on the unpatterned substrate. The enhanced growth rate also results in heavily porous GaN. Selected area growth, device processing, the material and device characterization results will be presented. In particular the selected area growth of doped contacts in the 800°C temperature range leads to superior morphology and contact resistance as compared to similar contacts grown at 1060°C. The contact resistivity of the n+ re-growth region measured was ∼2×$ 10^{−4} $ Ω-m and the morphology of the re-grown region was comparable to the as-grown GaN with an RMS roughness ∼1.4nm. The success of fabricating low temperature contacts for GaN enhancement mode MOS transistors is a critical step in fabricating these devices opening new applications. Zeng, C. aut Jin, Y. aut Long, J.P. aut Grenko, J.A. aut Dandu, K. aut Johnson, M.A.L aut Barlage, D.W. aut Enthalten in MRS online proceedings library Springer International Publishing, 1998 892(2005), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:892 year:2005 number:1 month:12 https://dx.doi.org/10.1557/PROC-0892-FF16-01 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_2005 AR 892 2005 1 12 |
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10.1557/PROC-0892-FF16-01 doi (DE-627)SPR043292860 (SPR)PROC-0892-FF16-01-e DE-627 ger DE-627 rakwb eng 670 VZ Saripalli, Y.N. verfasserin aut Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Materials Research Society 2006 Abstract GaN has a wide band gap energy, high electron mobility, high saturation velocity, and excellent thermal properties making it a promising material for high power and high frequency electronic devices. The development of enhancement mode GaN metal oxide semiconductor (MOS) transistors has been elusive due to the non-availability of a good insulating gate dielectric and the difficulty in forming of ohmic source/drain regions. Ion-implantation of dopants causes severe lattice damage requiring a high temperature post-implant anneal and has not been a successful method to obtain acceptable low-resistance source/drain regions. At the same time, gate dielectrics for most compound semiconductors, in addition to difficulties in minimizing the density of interface states which pin the Fermi level by inducing trap levels in the midgap, are degraded by instabilities as a result of high temperature annealing. The paper presents the development ohmic source/drain contacts for GaN MOSFETs by selected area epitaxial regrowth. Re-growth of GaN on patterned substrates by metal-organic chemical vapor deposition (MOCVD) employs a growth regime to decrease the enhanced growth rates and island formation that result from the diffusion of precursors to the selected area. The enhanced growth rate is 4.5μm/hr compared to 0.5μm/hr of the as-grown GaN on the unpatterned substrate. The enhanced growth rate also results in heavily porous GaN. Selected area growth, device processing, the material and device characterization results will be presented. In particular the selected area growth of doped contacts in the 800°C temperature range leads to superior morphology and contact resistance as compared to similar contacts grown at 1060°C. The contact resistivity of the n+ re-growth region measured was ∼2×$ 10^{−4} $ Ω-m and the morphology of the re-grown region was comparable to the as-grown GaN with an RMS roughness ∼1.4nm. The success of fabricating low temperature contacts for GaN enhancement mode MOS transistors is a critical step in fabricating these devices opening new applications. Zeng, C. aut Jin, Y. aut Long, J.P. aut Grenko, J.A. aut Dandu, K. aut Johnson, M.A.L aut Barlage, D.W. aut Enthalten in MRS online proceedings library Springer International Publishing, 1998 892(2005), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:892 year:2005 number:1 month:12 https://dx.doi.org/10.1557/PROC-0892-FF16-01 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_2005 AR 892 2005 1 12 |
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Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs |
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Saripalli, Y.N. |
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MRS online proceedings library |
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MRS online proceedings library |
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eng |
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600 - Technology |
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marc |
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2005 |
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txt |
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Saripalli, Y.N. Zeng, C. Jin, Y. Long, J.P. Grenko, J.A. Dandu, K. Johnson, M.A.L Barlage, D.W. |
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892 |
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670 VZ |
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Elektronische Aufsätze |
| author-letter |
Saripalli, Y.N. |
| doi_str_mv |
10.1557/PROC-0892-FF16-01 |
| dewey-full |
670 |
| title_sort |
low temperature selected area re-growth of ohmic contacts for iii-n fets |
| title_auth |
Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs |
| abstract |
Abstract GaN has a wide band gap energy, high electron mobility, high saturation velocity, and excellent thermal properties making it a promising material for high power and high frequency electronic devices. The development of enhancement mode GaN metal oxide semiconductor (MOS) transistors has been elusive due to the non-availability of a good insulating gate dielectric and the difficulty in forming of ohmic source/drain regions. Ion-implantation of dopants causes severe lattice damage requiring a high temperature post-implant anneal and has not been a successful method to obtain acceptable low-resistance source/drain regions. At the same time, gate dielectrics for most compound semiconductors, in addition to difficulties in minimizing the density of interface states which pin the Fermi level by inducing trap levels in the midgap, are degraded by instabilities as a result of high temperature annealing. The paper presents the development ohmic source/drain contacts for GaN MOSFETs by selected area epitaxial regrowth. Re-growth of GaN on patterned substrates by metal-organic chemical vapor deposition (MOCVD) employs a growth regime to decrease the enhanced growth rates and island formation that result from the diffusion of precursors to the selected area. The enhanced growth rate is 4.5μm/hr compared to 0.5μm/hr of the as-grown GaN on the unpatterned substrate. The enhanced growth rate also results in heavily porous GaN. Selected area growth, device processing, the material and device characterization results will be presented. In particular the selected area growth of doped contacts in the 800°C temperature range leads to superior morphology and contact resistance as compared to similar contacts grown at 1060°C. The contact resistivity of the n+ re-growth region measured was ∼2×$ 10^{−4} $ Ω-m and the morphology of the re-grown region was comparable to the as-grown GaN with an RMS roughness ∼1.4nm. The success of fabricating low temperature contacts for GaN enhancement mode MOS transistors is a critical step in fabricating these devices opening new applications. © The Materials Research Society 2006 |
| abstractGer |
Abstract GaN has a wide band gap energy, high electron mobility, high saturation velocity, and excellent thermal properties making it a promising material for high power and high frequency electronic devices. The development of enhancement mode GaN metal oxide semiconductor (MOS) transistors has been elusive due to the non-availability of a good insulating gate dielectric and the difficulty in forming of ohmic source/drain regions. Ion-implantation of dopants causes severe lattice damage requiring a high temperature post-implant anneal and has not been a successful method to obtain acceptable low-resistance source/drain regions. At the same time, gate dielectrics for most compound semiconductors, in addition to difficulties in minimizing the density of interface states which pin the Fermi level by inducing trap levels in the midgap, are degraded by instabilities as a result of high temperature annealing. The paper presents the development ohmic source/drain contacts for GaN MOSFETs by selected area epitaxial regrowth. Re-growth of GaN on patterned substrates by metal-organic chemical vapor deposition (MOCVD) employs a growth regime to decrease the enhanced growth rates and island formation that result from the diffusion of precursors to the selected area. The enhanced growth rate is 4.5μm/hr compared to 0.5μm/hr of the as-grown GaN on the unpatterned substrate. The enhanced growth rate also results in heavily porous GaN. Selected area growth, device processing, the material and device characterization results will be presented. In particular the selected area growth of doped contacts in the 800°C temperature range leads to superior morphology and contact resistance as compared to similar contacts grown at 1060°C. The contact resistivity of the n+ re-growth region measured was ∼2×$ 10^{−4} $ Ω-m and the morphology of the re-grown region was comparable to the as-grown GaN with an RMS roughness ∼1.4nm. The success of fabricating low temperature contacts for GaN enhancement mode MOS transistors is a critical step in fabricating these devices opening new applications. © The Materials Research Society 2006 |
| abstract_unstemmed |
Abstract GaN has a wide band gap energy, high electron mobility, high saturation velocity, and excellent thermal properties making it a promising material for high power and high frequency electronic devices. The development of enhancement mode GaN metal oxide semiconductor (MOS) transistors has been elusive due to the non-availability of a good insulating gate dielectric and the difficulty in forming of ohmic source/drain regions. Ion-implantation of dopants causes severe lattice damage requiring a high temperature post-implant anneal and has not been a successful method to obtain acceptable low-resistance source/drain regions. At the same time, gate dielectrics for most compound semiconductors, in addition to difficulties in minimizing the density of interface states which pin the Fermi level by inducing trap levels in the midgap, are degraded by instabilities as a result of high temperature annealing. The paper presents the development ohmic source/drain contacts for GaN MOSFETs by selected area epitaxial regrowth. Re-growth of GaN on patterned substrates by metal-organic chemical vapor deposition (MOCVD) employs a growth regime to decrease the enhanced growth rates and island formation that result from the diffusion of precursors to the selected area. The enhanced growth rate is 4.5μm/hr compared to 0.5μm/hr of the as-grown GaN on the unpatterned substrate. The enhanced growth rate also results in heavily porous GaN. Selected area growth, device processing, the material and device characterization results will be presented. In particular the selected area growth of doped contacts in the 800°C temperature range leads to superior morphology and contact resistance as compared to similar contacts grown at 1060°C. The contact resistivity of the n+ re-growth region measured was ∼2×$ 10^{−4} $ Ω-m and the morphology of the re-grown region was comparable to the as-grown GaN with an RMS roughness ∼1.4nm. The success of fabricating low temperature contacts for GaN enhancement mode MOS transistors is a critical step in fabricating these devices opening new applications. © The Materials Research Society 2006 |
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1 |
| title_short |
Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs |
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https://dx.doi.org/10.1557/PROC-0892-FF16-01 |
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| author2 |
Zeng, C. Jin, Y. Long, J.P. Grenko, J.A. Dandu, K. Johnson, M.A.L Barlage, D.W. |
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Zeng, C. Jin, Y. Long, J.P. Grenko, J.A. Dandu, K. Johnson, M.A.L Barlage, D.W. |
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57782046X |
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2024-07-03T17:44:49.443Z |
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Re-growth of GaN on patterned substrates by metal-organic chemical vapor deposition (MOCVD) employs a growth regime to decrease the enhanced growth rates and island formation that result from the diffusion of precursors to the selected area. The enhanced growth rate is 4.5μm/hr compared to 0.5μm/hr of the as-grown GaN on the unpatterned substrate. The enhanced growth rate also results in heavily porous GaN. Selected area growth, device processing, the material and device characterization results will be presented. In particular the selected area growth of doped contacts in the 800°C temperature range leads to superior morphology and contact resistance as compared to similar contacts grown at 1060°C. The contact resistivity of the n+ re-growth region measured was ∼2×$ 10^{−4} $ Ω-m and the morphology of the re-grown region was comparable to the as-grown GaN with an RMS roughness ∼1.4nm. 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