Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films
Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has...
Ausführliche Beschreibung
Autor*in: |
Gupta, Reema [verfasserIn] Tomar, Monika [verfasserIn] Tandon, Ram Pal [verfasserIn] Gupta, Vinay [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2021 |
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Anmerkung: |
© The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021 |
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Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1973, 127(2021), 6 vom: 18. Mai |
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Übergeordnetes Werk: |
volume:127 ; year:2021 ; number:6 ; day:18 ; month:05 |
Links: |
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DOI / URN: |
10.1007/s00339-021-04552-3 |
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Katalog-ID: |
SPR044065906 |
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520 | |a Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of $ TiO_{2} $. The disappearance of cracks in PZT films deposited on $ TiO_{2} $/Pt/Ti/$ SiO_{2} $/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of $ TiO_{2} $. Reduction in the leakage current density from 4.45×$ 10^{−5} $ to 2.42×$ 10^{−10} $ A/$ cm^{2} $ is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (Ps = 45 μC/$ cm^{2} $) is achieved for the optimized $ TiO_{2} $-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×$ 10^{19} $ $ cm^{−3} $. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/$ cm^{2} $. Short circuit current (Isc) increased from 1.42 × $ 10^{−9} $ to 0.63 × $ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/$ cm^{2} $ to 24 mW/$ cm^{2} $, respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. The transient photocurrent is increased from 1.80 × $ 10^{−9} $ to 1.57×$ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $ at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×$ 10^{−7} $ to 4.98×$ 10^{−7} $ A is found with heating along with UV illumination (intensity =24 mW/$ cm^{2} $). | ||
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650 | 4 | |a Polarization |7 (dpeaa)DE-He213 | |
700 | 1 | |a Tomar, Monika |e verfasserin |4 aut | |
700 | 1 | |a Tandon, Ram Pal |e verfasserin |4 aut | |
700 | 1 | |a Gupta, Vinay |e verfasserin |4 aut | |
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10.1007/s00339-021-04552-3 doi (DE-627)SPR044065906 (SPR)s00339-021-04552-3-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Gupta, Reema verfasserin aut Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021 Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of $ TiO_{2} $. The disappearance of cracks in PZT films deposited on $ TiO_{2} $/Pt/Ti/$ SiO_{2} $/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of $ TiO_{2} $. Reduction in the leakage current density from 4.45×$ 10^{−5} $ to 2.42×$ 10^{−10} $ A/$ cm^{2} $ is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (Ps = 45 μC/$ cm^{2} $) is achieved for the optimized $ TiO_{2} $-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×$ 10^{19} $ $ cm^{−3} $. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/$ cm^{2} $. Short circuit current (Isc) increased from 1.42 × $ 10^{−9} $ to 0.63 × $ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/$ cm^{2} $ to 24 mW/$ cm^{2} $, respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. The transient photocurrent is increased from 1.80 × $ 10^{−9} $ to 1.57×$ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $ at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×$ 10^{−7} $ to 4.98×$ 10^{−7} $ A is found with heating along with UV illumination (intensity =24 mW/$ cm^{2} $). PZT (dpeaa)DE-He213 TiO (dpeaa)DE-He213 CSD (dpeaa)DE-He213 Ferroelectric (dpeaa)DE-He213 Dielectric (dpeaa)DE-He213 Photovoltaic (dpeaa)DE-He213 Polarization (dpeaa)DE-He213 Tomar, Monika verfasserin aut Tandon, Ram Pal verfasserin aut Gupta, Vinay verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 127(2021), 6 vom: 18. Mai (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:127 year:2021 number:6 day:18 month:05 https://dx.doi.org/10.1007/s00339-021-04552-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 127 2021 6 18 05 |
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10.1007/s00339-021-04552-3 doi (DE-627)SPR044065906 (SPR)s00339-021-04552-3-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Gupta, Reema verfasserin aut Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021 Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of $ TiO_{2} $. The disappearance of cracks in PZT films deposited on $ TiO_{2} $/Pt/Ti/$ SiO_{2} $/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of $ TiO_{2} $. Reduction in the leakage current density from 4.45×$ 10^{−5} $ to 2.42×$ 10^{−10} $ A/$ cm^{2} $ is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (Ps = 45 μC/$ cm^{2} $) is achieved for the optimized $ TiO_{2} $-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×$ 10^{19} $ $ cm^{−3} $. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/$ cm^{2} $. Short circuit current (Isc) increased from 1.42 × $ 10^{−9} $ to 0.63 × $ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/$ cm^{2} $ to 24 mW/$ cm^{2} $, respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. The transient photocurrent is increased from 1.80 × $ 10^{−9} $ to 1.57×$ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $ at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×$ 10^{−7} $ to 4.98×$ 10^{−7} $ A is found with heating along with UV illumination (intensity =24 mW/$ cm^{2} $). PZT (dpeaa)DE-He213 TiO (dpeaa)DE-He213 CSD (dpeaa)DE-He213 Ferroelectric (dpeaa)DE-He213 Dielectric (dpeaa)DE-He213 Photovoltaic (dpeaa)DE-He213 Polarization (dpeaa)DE-He213 Tomar, Monika verfasserin aut Tandon, Ram Pal verfasserin aut Gupta, Vinay verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 127(2021), 6 vom: 18. Mai (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:127 year:2021 number:6 day:18 month:05 https://dx.doi.org/10.1007/s00339-021-04552-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 127 2021 6 18 05 |
allfields_unstemmed |
10.1007/s00339-021-04552-3 doi (DE-627)SPR044065906 (SPR)s00339-021-04552-3-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Gupta, Reema verfasserin aut Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021 Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of $ TiO_{2} $. The disappearance of cracks in PZT films deposited on $ TiO_{2} $/Pt/Ti/$ SiO_{2} $/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of $ TiO_{2} $. Reduction in the leakage current density from 4.45×$ 10^{−5} $ to 2.42×$ 10^{−10} $ A/$ cm^{2} $ is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (Ps = 45 μC/$ cm^{2} $) is achieved for the optimized $ TiO_{2} $-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×$ 10^{19} $ $ cm^{−3} $. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/$ cm^{2} $. Short circuit current (Isc) increased from 1.42 × $ 10^{−9} $ to 0.63 × $ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/$ cm^{2} $ to 24 mW/$ cm^{2} $, respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. The transient photocurrent is increased from 1.80 × $ 10^{−9} $ to 1.57×$ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $ at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×$ 10^{−7} $ to 4.98×$ 10^{−7} $ A is found with heating along with UV illumination (intensity =24 mW/$ cm^{2} $). PZT (dpeaa)DE-He213 TiO (dpeaa)DE-He213 CSD (dpeaa)DE-He213 Ferroelectric (dpeaa)DE-He213 Dielectric (dpeaa)DE-He213 Photovoltaic (dpeaa)DE-He213 Polarization (dpeaa)DE-He213 Tomar, Monika verfasserin aut Tandon, Ram Pal verfasserin aut Gupta, Vinay verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 127(2021), 6 vom: 18. Mai (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:127 year:2021 number:6 day:18 month:05 https://dx.doi.org/10.1007/s00339-021-04552-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 127 2021 6 18 05 |
allfieldsGer |
10.1007/s00339-021-04552-3 doi (DE-627)SPR044065906 (SPR)s00339-021-04552-3-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Gupta, Reema verfasserin aut Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021 Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of $ TiO_{2} $. The disappearance of cracks in PZT films deposited on $ TiO_{2} $/Pt/Ti/$ SiO_{2} $/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of $ TiO_{2} $. Reduction in the leakage current density from 4.45×$ 10^{−5} $ to 2.42×$ 10^{−10} $ A/$ cm^{2} $ is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (Ps = 45 μC/$ cm^{2} $) is achieved for the optimized $ TiO_{2} $-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×$ 10^{19} $ $ cm^{−3} $. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/$ cm^{2} $. Short circuit current (Isc) increased from 1.42 × $ 10^{−9} $ to 0.63 × $ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/$ cm^{2} $ to 24 mW/$ cm^{2} $, respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. The transient photocurrent is increased from 1.80 × $ 10^{−9} $ to 1.57×$ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $ at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×$ 10^{−7} $ to 4.98×$ 10^{−7} $ A is found with heating along with UV illumination (intensity =24 mW/$ cm^{2} $). PZT (dpeaa)DE-He213 TiO (dpeaa)DE-He213 CSD (dpeaa)DE-He213 Ferroelectric (dpeaa)DE-He213 Dielectric (dpeaa)DE-He213 Photovoltaic (dpeaa)DE-He213 Polarization (dpeaa)DE-He213 Tomar, Monika verfasserin aut Tandon, Ram Pal verfasserin aut Gupta, Vinay verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 127(2021), 6 vom: 18. Mai (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:127 year:2021 number:6 day:18 month:05 https://dx.doi.org/10.1007/s00339-021-04552-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 127 2021 6 18 05 |
allfieldsSound |
10.1007/s00339-021-04552-3 doi (DE-627)SPR044065906 (SPR)s00339-021-04552-3-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Gupta, Reema verfasserin aut Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021 Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of $ TiO_{2} $. The disappearance of cracks in PZT films deposited on $ TiO_{2} $/Pt/Ti/$ SiO_{2} $/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of $ TiO_{2} $. Reduction in the leakage current density from 4.45×$ 10^{−5} $ to 2.42×$ 10^{−10} $ A/$ cm^{2} $ is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (Ps = 45 μC/$ cm^{2} $) is achieved for the optimized $ TiO_{2} $-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×$ 10^{19} $ $ cm^{−3} $. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/$ cm^{2} $. Short circuit current (Isc) increased from 1.42 × $ 10^{−9} $ to 0.63 × $ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/$ cm^{2} $ to 24 mW/$ cm^{2} $, respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. The transient photocurrent is increased from 1.80 × $ 10^{−9} $ to 1.57×$ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $ at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×$ 10^{−7} $ to 4.98×$ 10^{−7} $ A is found with heating along with UV illumination (intensity =24 mW/$ cm^{2} $). PZT (dpeaa)DE-He213 TiO (dpeaa)DE-He213 CSD (dpeaa)DE-He213 Ferroelectric (dpeaa)DE-He213 Dielectric (dpeaa)DE-He213 Photovoltaic (dpeaa)DE-He213 Polarization (dpeaa)DE-He213 Tomar, Monika verfasserin aut Tandon, Ram Pal verfasserin aut Gupta, Vinay verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 127(2021), 6 vom: 18. Mai (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:127 year:2021 number:6 day:18 month:05 https://dx.doi.org/10.1007/s00339-021-04552-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 127 2021 6 18 05 |
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English |
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Enthalten in Applied physics 127(2021), 6 vom: 18. Mai volume:127 year:2021 number:6 day:18 month:05 |
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Enthalten in Applied physics 127(2021), 6 vom: 18. Mai volume:127 year:2021 number:6 day:18 month:05 |
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PZT TiO CSD Ferroelectric Dielectric Photovoltaic Polarization |
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Gupta, Reema @@aut@@ Tomar, Monika @@aut@@ Tandon, Ram Pal @@aut@@ Gupta, Vinay @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR044065906</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220110173149.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210519s2021 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-021-04552-3</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR044065906</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s00339-021-04552-3-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.09</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Gupta, Reema</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of $ TiO_{2} $. The disappearance of cracks in PZT films deposited on $ TiO_{2} $/Pt/Ti/$ SiO_{2} $/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of $ TiO_{2} $. Reduction in the leakage current density from 4.45×$ 10^{−5} $ to 2.42×$ 10^{−10} $ A/$ cm^{2} $ is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (Ps = 45 μC/$ cm^{2} $) is achieved for the optimized $ TiO_{2} $-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×$ 10^{19} $ $ cm^{−3} $. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/$ cm^{2} $. Short circuit current (Isc) increased from 1.42 × $ 10^{−9} $ to 0.63 × $ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/$ cm^{2} $ to 24 mW/$ cm^{2} $, respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. The transient photocurrent is increased from 1.80 × $ 10^{−9} $ to 1.57×$ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $ at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×$ 10^{−7} $ to 4.98×$ 10^{−7} $ A is found with heating along with UV illumination (intensity =24 mW/$ cm^{2} $).</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">PZT</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TiO</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CSD</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ferroelectric</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dielectric</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photovoltaic</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Polarization</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tomar, Monika</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tandon, Ram Pal</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gupta, Vinay</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics</subfield><subfield code="d">Berlin : Springer, 1973</subfield><subfield code="g">127(2021), 6 vom: 18. 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|
author |
Gupta, Reema |
spellingShingle |
Gupta, Reema ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc PZT misc TiO misc CSD misc Ferroelectric misc Dielectric misc Photovoltaic misc Polarization Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films |
authorStr |
Gupta, Reema |
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@@773@@(DE-627)235503231 |
format |
electronic Article |
dewey-ones |
530 - Physics |
delete_txt_mv |
keep |
author_role |
aut aut aut aut |
collection |
springer |
remote_str |
true |
illustrated |
Not Illustrated |
issn |
1432-0630 |
topic_title |
530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films PZT (dpeaa)DE-He213 TiO (dpeaa)DE-He213 CSD (dpeaa)DE-He213 Ferroelectric (dpeaa)DE-He213 Dielectric (dpeaa)DE-He213 Photovoltaic (dpeaa)DE-He213 Polarization (dpeaa)DE-He213 |
topic |
ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc PZT misc TiO misc CSD misc Ferroelectric misc Dielectric misc Photovoltaic misc Polarization |
topic_unstemmed |
ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc PZT misc TiO misc CSD misc Ferroelectric misc Dielectric misc Photovoltaic misc Polarization |
topic_browse |
ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc PZT misc TiO misc CSD misc Ferroelectric misc Dielectric misc Photovoltaic misc Polarization |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Text Zeitschrift/Artikel |
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cr |
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Applied physics |
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Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films |
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Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films |
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Gupta, Reema Tomar, Monika Tandon, Ram Pal Gupta, Vinay |
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impact of $ tio_{2} $ buffer layer on the ferroelectric photovoltaic response of csd grown pzt thick films |
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Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films |
abstract |
Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of $ TiO_{2} $. The disappearance of cracks in PZT films deposited on $ TiO_{2} $/Pt/Ti/$ SiO_{2} $/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of $ TiO_{2} $. Reduction in the leakage current density from 4.45×$ 10^{−5} $ to 2.42×$ 10^{−10} $ A/$ cm^{2} $ is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (Ps = 45 μC/$ cm^{2} $) is achieved for the optimized $ TiO_{2} $-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×$ 10^{19} $ $ cm^{−3} $. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/$ cm^{2} $. Short circuit current (Isc) increased from 1.42 × $ 10^{−9} $ to 0.63 × $ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/$ cm^{2} $ to 24 mW/$ cm^{2} $, respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. The transient photocurrent is increased from 1.80 × $ 10^{−9} $ to 1.57×$ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $ at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×$ 10^{−7} $ to 4.98×$ 10^{−7} $ A is found with heating along with UV illumination (intensity =24 mW/$ cm^{2} $). © The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021 |
abstractGer |
Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of $ TiO_{2} $. The disappearance of cracks in PZT films deposited on $ TiO_{2} $/Pt/Ti/$ SiO_{2} $/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of $ TiO_{2} $. Reduction in the leakage current density from 4.45×$ 10^{−5} $ to 2.42×$ 10^{−10} $ A/$ cm^{2} $ is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (Ps = 45 μC/$ cm^{2} $) is achieved for the optimized $ TiO_{2} $-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×$ 10^{19} $ $ cm^{−3} $. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/$ cm^{2} $. Short circuit current (Isc) increased from 1.42 × $ 10^{−9} $ to 0.63 × $ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/$ cm^{2} $ to 24 mW/$ cm^{2} $, respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. The transient photocurrent is increased from 1.80 × $ 10^{−9} $ to 1.57×$ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $ at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×$ 10^{−7} $ to 4.98×$ 10^{−7} $ A is found with heating along with UV illumination (intensity =24 mW/$ cm^{2} $). © The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021 |
abstract_unstemmed |
Abstract Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/$ SiO_{2} $/Si and $ TiO_{2} $-buffered Pt/Ti/$ SiO_{2} $/Si substrates. Effect of thin $ TiO_{2} $ buffer layer on the structural, dielectric and electrical properties of PZT films has been investigated in the present work. Polycrystalline single-phase PZT thick film is achieved using the buffer layer of $ TiO_{2} $. The disappearance of cracks in PZT films deposited on $ TiO_{2} $/Pt/Ti/$ SiO_{2} $/Si substrate indicates the role of the buffer layer as a diffusion barrier for platinum into PZT. The dielectric constant of the PZT film is found to be increased from 104 to 403, while the dielectric loss is reduced from 0.19 to 0.06 at 1MHz using the buffer layer of $ TiO_{2} $. Reduction in the leakage current density from 4.45×$ 10^{−5} $ to 2.42×$ 10^{−10} $ A/$ cm^{2} $ is obtained for the titanium dioxide buffer layered PZT film. The saturation polarization (Ps = 45 μC/$ cm^{2} $) is achieved for the optimized $ TiO_{2} $-buffered PZT thick film. Optimized PZT film shows well-defined butterfly loop revealing its ferroelectric nature. Free carrier concentration of the optimized film is determined from the Mott Schottky analysis and found to be 4.28×$ 10^{19} $ $ cm^{−3} $. The ferroelectric photovoltaic device is fabricated using the optimized PZT thick film, and photovoltaic measurements are done under UV illumination with variation in UV intensity from 2 to 24 mW/$ cm^{2} $. Short circuit current (Isc) increased from 1.42 × $ 10^{−9} $ to 0.63 × $ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. However, open circuit voltage (−1.7V) is observed to remain constant with increase in the UV intensity 2 mW/$ cm^{2} $ to 24 mW/$ cm^{2} $, respectively. The power conversion efficiency is found to be increased from 0.15 to 0.58% with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $. The transient photocurrent is increased from 1.80 × $ 10^{−9} $ to 1.57×$ 10^{−7} $ A with increase in the UV intensity from 2 to 24 mW/$ cm^{2} $ at fixed DC bias voltage (5V) for the fabricated photovoltaic device. Response of the optimized fabricated photovoltaic cell to the incident UV light of different intensities is fast with excellent stability. A significant enhancement in the photocurrent from 1.68×$ 10^{−7} $ to 4.98×$ 10^{−7} $ A is found with heating along with UV illumination (intensity =24 mW/$ cm^{2} $). © The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021 |
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Impact of $ TiO_{2} $ buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films |
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|
score |
7.399892 |