A new route for caesium lead halide perovskite deposition
Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural a...
Ausführliche Beschreibung
Autor*in: |
Falsini, Naomi [verfasserIn] Ristori, Andrea [verfasserIn] Biccari, Francesco [verfasserIn] Calisi, Nicola [verfasserIn] Roini, Giammarco [verfasserIn] Scardi, Paolo [verfasserIn] Caporali, Stefano [verfasserIn] Vinattieri, Anna [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2021 |
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Anmerkung: |
© The Author(s) 2021 |
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Übergeordnetes Werk: |
Enthalten in: Journal of the European Optical Society - London, 2006, 17(2021), 1 vom: 02. Juni |
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Übergeordnetes Werk: |
volume:17 ; year:2021 ; number:1 ; day:02 ; month:06 |
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DOI / URN: |
10.1186/s41476-021-00153-y |
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Katalog-ID: |
SPR044214626 |
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520 | |a Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications. | ||
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10.1186/s41476-021-00153-y doi (DE-627)SPR044214626 (SPR)s41476-021-00153-y-e DE-627 ger DE-627 rakwb eng 530 ASE 33.18 bkl Falsini, Naomi verfasserin aut A new route for caesium lead halide perovskite deposition 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications. Perovskites (dpeaa)DE-He213 Time resolved spectroscopy (dpeaa)DE-He213 Photoluminescence (dpeaa)DE-He213 Sputtering (dpeaa)DE-He213 Films (dpeaa)DE-He213 Ristori, Andrea verfasserin aut Biccari, Francesco verfasserin aut Calisi, Nicola verfasserin aut Roini, Giammarco verfasserin aut Scardi, Paolo verfasserin aut Caporali, Stefano verfasserin aut Vinattieri, Anna verfasserin aut Enthalten in Journal of the European Optical Society London, 2006 17(2021), 1 vom: 02. Juni (DE-627)518101673 (DE-600)2251568-9 1990-2573 nnns volume:17 year:2021 number:1 day:02 month:06 https://dx.doi.org/10.1186/s41476-021-00153-y kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 33.18 ASE AR 17 2021 1 02 06 |
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10.1186/s41476-021-00153-y doi (DE-627)SPR044214626 (SPR)s41476-021-00153-y-e DE-627 ger DE-627 rakwb eng 530 ASE 33.18 bkl Falsini, Naomi verfasserin aut A new route for caesium lead halide perovskite deposition 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications. Perovskites (dpeaa)DE-He213 Time resolved spectroscopy (dpeaa)DE-He213 Photoluminescence (dpeaa)DE-He213 Sputtering (dpeaa)DE-He213 Films (dpeaa)DE-He213 Ristori, Andrea verfasserin aut Biccari, Francesco verfasserin aut Calisi, Nicola verfasserin aut Roini, Giammarco verfasserin aut Scardi, Paolo verfasserin aut Caporali, Stefano verfasserin aut Vinattieri, Anna verfasserin aut Enthalten in Journal of the European Optical Society London, 2006 17(2021), 1 vom: 02. Juni (DE-627)518101673 (DE-600)2251568-9 1990-2573 nnns volume:17 year:2021 number:1 day:02 month:06 https://dx.doi.org/10.1186/s41476-021-00153-y kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 33.18 ASE AR 17 2021 1 02 06 |
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10.1186/s41476-021-00153-y doi (DE-627)SPR044214626 (SPR)s41476-021-00153-y-e DE-627 ger DE-627 rakwb eng 530 ASE 33.18 bkl Falsini, Naomi verfasserin aut A new route for caesium lead halide perovskite deposition 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications. Perovskites (dpeaa)DE-He213 Time resolved spectroscopy (dpeaa)DE-He213 Photoluminescence (dpeaa)DE-He213 Sputtering (dpeaa)DE-He213 Films (dpeaa)DE-He213 Ristori, Andrea verfasserin aut Biccari, Francesco verfasserin aut Calisi, Nicola verfasserin aut Roini, Giammarco verfasserin aut Scardi, Paolo verfasserin aut Caporali, Stefano verfasserin aut Vinattieri, Anna verfasserin aut Enthalten in Journal of the European Optical Society London, 2006 17(2021), 1 vom: 02. Juni (DE-627)518101673 (DE-600)2251568-9 1990-2573 nnns volume:17 year:2021 number:1 day:02 month:06 https://dx.doi.org/10.1186/s41476-021-00153-y kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 33.18 ASE AR 17 2021 1 02 06 |
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10.1186/s41476-021-00153-y doi (DE-627)SPR044214626 (SPR)s41476-021-00153-y-e DE-627 ger DE-627 rakwb eng 530 ASE 33.18 bkl Falsini, Naomi verfasserin aut A new route for caesium lead halide perovskite deposition 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications. Perovskites (dpeaa)DE-He213 Time resolved spectroscopy (dpeaa)DE-He213 Photoluminescence (dpeaa)DE-He213 Sputtering (dpeaa)DE-He213 Films (dpeaa)DE-He213 Ristori, Andrea verfasserin aut Biccari, Francesco verfasserin aut Calisi, Nicola verfasserin aut Roini, Giammarco verfasserin aut Scardi, Paolo verfasserin aut Caporali, Stefano verfasserin aut Vinattieri, Anna verfasserin aut Enthalten in Journal of the European Optical Society London, 2006 17(2021), 1 vom: 02. Juni (DE-627)518101673 (DE-600)2251568-9 1990-2573 nnns volume:17 year:2021 number:1 day:02 month:06 https://dx.doi.org/10.1186/s41476-021-00153-y kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 33.18 ASE AR 17 2021 1 02 06 |
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10.1186/s41476-021-00153-y doi (DE-627)SPR044214626 (SPR)s41476-021-00153-y-e DE-627 ger DE-627 rakwb eng 530 ASE 33.18 bkl Falsini, Naomi verfasserin aut A new route for caesium lead halide perovskite deposition 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications. Perovskites (dpeaa)DE-He213 Time resolved spectroscopy (dpeaa)DE-He213 Photoluminescence (dpeaa)DE-He213 Sputtering (dpeaa)DE-He213 Films (dpeaa)DE-He213 Ristori, Andrea verfasserin aut Biccari, Francesco verfasserin aut Calisi, Nicola verfasserin aut Roini, Giammarco verfasserin aut Scardi, Paolo verfasserin aut Caporali, Stefano verfasserin aut Vinattieri, Anna verfasserin aut Enthalten in Journal of the European Optical Society London, 2006 17(2021), 1 vom: 02. Juni (DE-627)518101673 (DE-600)2251568-9 1990-2573 nnns volume:17 year:2021 number:1 day:02 month:06 https://dx.doi.org/10.1186/s41476-021-00153-y kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 33.18 ASE AR 17 2021 1 02 06 |
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A new route for caesium lead halide perovskite deposition |
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Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications. © The Author(s) 2021 |
abstractGer |
Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications. © The Author(s) 2021 |
abstract_unstemmed |
Abstract Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications. © The Author(s) 2021 |
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The successful deposition of thin films of $ CsPbBr_{3} $ and $ CsPbCl_{3} $ has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. 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