Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory
Abstract Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/$ ZnO_{2} $/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thi...
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| Autor*in: |
Simanjuntak, Firman Mangasa [verfasserIn] Panda, Debashis [verfasserIn] Chandrasekaran, Sridhar [verfasserIn] Aluguri, Rakesh [verfasserIn] Lin, Chun-Chieh [verfasserIn] Tseng, Tseung-Yuen [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Schlagwörter: |
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| Anmerkung: |
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electroceramics - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997, 46(2021), 1 vom: Feb., Seite 14-19 |
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| Übergeordnetes Werk: |
volume:46 ; year:2021 ; number:1 ; month:02 ; pages:14-19 |
| Links: |
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| DOI / URN: |
10.1007/s10832-021-00239-6 |
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| Katalog-ID: |
SPR045039321 |
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| 520 | |a Abstract Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/$ ZnO_{2} $/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode. | ||
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10.1007/s10832-021-00239-6 doi (DE-627)SPR045039321 (SPR)s10832-021-00239-6-e DE-627 ger DE-627 rakwb eng 620 ASE 53.09 bkl Simanjuntak, Firman Mangasa verfasserin aut Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/$ ZnO_{2} $/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode. Conducting oxide (dpeaa)DE-He213 Transparent electronic (dpeaa)DE-He213 Resistive switching (dpeaa)DE-He213 Valence change memory (dpeaa)DE-He213 Panda, Debashis verfasserin aut Chandrasekaran, Sridhar verfasserin aut Aluguri, Rakesh verfasserin aut Lin, Chun-Chieh verfasserin aut Tseng, Tseung-Yuen verfasserin aut Enthalten in Journal of electroceramics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997 46(2021), 1 vom: Feb., Seite 14-19 (DE-627)268754381 (DE-600)1472395-5 1573-8663 nnns volume:46 year:2021 number:1 month:02 pages:14-19 https://dx.doi.org/10.1007/s10832-021-00239-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.09 ASE AR 46 2021 1 02 14-19 |
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10.1007/s10832-021-00239-6 doi (DE-627)SPR045039321 (SPR)s10832-021-00239-6-e DE-627 ger DE-627 rakwb eng 620 ASE 53.09 bkl Simanjuntak, Firman Mangasa verfasserin aut Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/$ ZnO_{2} $/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode. Conducting oxide (dpeaa)DE-He213 Transparent electronic (dpeaa)DE-He213 Resistive switching (dpeaa)DE-He213 Valence change memory (dpeaa)DE-He213 Panda, Debashis verfasserin aut Chandrasekaran, Sridhar verfasserin aut Aluguri, Rakesh verfasserin aut Lin, Chun-Chieh verfasserin aut Tseng, Tseung-Yuen verfasserin aut Enthalten in Journal of electroceramics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997 46(2021), 1 vom: Feb., Seite 14-19 (DE-627)268754381 (DE-600)1472395-5 1573-8663 nnns volume:46 year:2021 number:1 month:02 pages:14-19 https://dx.doi.org/10.1007/s10832-021-00239-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.09 ASE AR 46 2021 1 02 14-19 |
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10.1007/s10832-021-00239-6 doi (DE-627)SPR045039321 (SPR)s10832-021-00239-6-e DE-627 ger DE-627 rakwb eng 620 ASE 53.09 bkl Simanjuntak, Firman Mangasa verfasserin aut Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/$ ZnO_{2} $/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode. Conducting oxide (dpeaa)DE-He213 Transparent electronic (dpeaa)DE-He213 Resistive switching (dpeaa)DE-He213 Valence change memory (dpeaa)DE-He213 Panda, Debashis verfasserin aut Chandrasekaran, Sridhar verfasserin aut Aluguri, Rakesh verfasserin aut Lin, Chun-Chieh verfasserin aut Tseng, Tseung-Yuen verfasserin aut Enthalten in Journal of electroceramics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997 46(2021), 1 vom: Feb., Seite 14-19 (DE-627)268754381 (DE-600)1472395-5 1573-8663 nnns volume:46 year:2021 number:1 month:02 pages:14-19 https://dx.doi.org/10.1007/s10832-021-00239-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.09 ASE AR 46 2021 1 02 14-19 |
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10.1007/s10832-021-00239-6 doi (DE-627)SPR045039321 (SPR)s10832-021-00239-6-e DE-627 ger DE-627 rakwb eng 620 ASE 53.09 bkl Simanjuntak, Firman Mangasa verfasserin aut Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/$ ZnO_{2} $/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode. Conducting oxide (dpeaa)DE-He213 Transparent electronic (dpeaa)DE-He213 Resistive switching (dpeaa)DE-He213 Valence change memory (dpeaa)DE-He213 Panda, Debashis verfasserin aut Chandrasekaran, Sridhar verfasserin aut Aluguri, Rakesh verfasserin aut Lin, Chun-Chieh verfasserin aut Tseng, Tseung-Yuen verfasserin aut Enthalten in Journal of electroceramics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997 46(2021), 1 vom: Feb., Seite 14-19 (DE-627)268754381 (DE-600)1472395-5 1573-8663 nnns volume:46 year:2021 number:1 month:02 pages:14-19 https://dx.doi.org/10.1007/s10832-021-00239-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.09 ASE AR 46 2021 1 02 14-19 |
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10.1007/s10832-021-00239-6 doi (DE-627)SPR045039321 (SPR)s10832-021-00239-6-e DE-627 ger DE-627 rakwb eng 620 ASE 53.09 bkl Simanjuntak, Firman Mangasa verfasserin aut Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 Abstract Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/$ ZnO_{2} $/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode. Conducting oxide (dpeaa)DE-He213 Transparent electronic (dpeaa)DE-He213 Resistive switching (dpeaa)DE-He213 Valence change memory (dpeaa)DE-He213 Panda, Debashis verfasserin aut Chandrasekaran, Sridhar verfasserin aut Aluguri, Rakesh verfasserin aut Lin, Chun-Chieh verfasserin aut Tseng, Tseung-Yuen verfasserin aut Enthalten in Journal of electroceramics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997 46(2021), 1 vom: Feb., Seite 14-19 (DE-627)268754381 (DE-600)1472395-5 1573-8663 nnns volume:46 year:2021 number:1 month:02 pages:14-19 https://dx.doi.org/10.1007/s10832-021-00239-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.09 ASE AR 46 2021 1 02 14-19 |
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Simanjuntak, Firman Mangasa @@aut@@ Panda, Debashis @@aut@@ Chandrasekaran, Sridhar @@aut@@ Aluguri, Rakesh @@aut@@ Lin, Chun-Chieh @@aut@@ Tseng, Tseung-Yuen @@aut@@ |
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Simanjuntak, Firman Mangasa |
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Simanjuntak, Firman Mangasa ddc 620 bkl 53.09 misc Conducting oxide misc Transparent electronic misc Resistive switching misc Valence change memory Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory |
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620 ASE 53.09 bkl Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory Conducting oxide (dpeaa)DE-He213 Transparent electronic (dpeaa)DE-He213 Resistive switching (dpeaa)DE-He213 Valence change memory (dpeaa)DE-He213 |
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ddc 620 bkl 53.09 misc Conducting oxide misc Transparent electronic misc Resistive switching misc Valence change memory |
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ddc 620 bkl 53.09 misc Conducting oxide misc Transparent electronic misc Resistive switching misc Valence change memory |
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Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory |
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Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory |
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Simanjuntak, Firman Mangasa |
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Simanjuntak, Firman Mangasa Panda, Debashis Chandrasekaran, Sridhar Aluguri, Rakesh Lin, Chun-Chieh Tseng, Tseung-Yuen |
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evaluating gallium-doped zno top electrode thickness for achieving a good switch-ability in $ zno_{2} $/zno bilayer transparent valence change memory |
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Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory |
| abstract |
Abstract Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/$ ZnO_{2} $/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
| abstractGer |
Abstract Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/$ ZnO_{2} $/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
| abstract_unstemmed |
Abstract Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/$ ZnO_{2} $/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021 |
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Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in $ ZnO_{2} $/ZnO bilayer transparent valence change memory |
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https://dx.doi.org/10.1007/s10832-021-00239-6 |
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Panda, Debashis Chandrasekaran, Sridhar Aluguri, Rakesh Lin, Chun-Chieh Tseng, Tseung-Yuen |
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Panda, Debashis Chandrasekaran, Sridhar Aluguri, Rakesh Lin, Chun-Chieh Tseng, Tseung-Yuen |
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10.1007/s10832-021-00239-6 |
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| score |
7.400687 |