CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor

Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Chae, Uikyu [verfasserIn] Park, Jeongsoo [verfasserIn] Kim, Jeong-Geun [verfasserIn] Yu, Hyun-Yong [verfasserIn] Cho, Il-Joo [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	CMOS VCO MEMS tunable inductor RF MEMS

Anmerkung:	© The Author(s) 2021

Übergeordnetes Werk:	Enthalten in: Micro and Nano Systems Letters - Berlin : SpringerOpen, 2013, 9(2021), 1 vom: 26. Nov.
Übergeordnetes Werk:	volume:9 ; year:2021 ; number:1 ; day:26 ; month:11

Links:	Volltext

DOI / URN:	10.1186/s40486-021-00140-5

Katalog-ID:	SPR045685835

Internformat


LEADER	01000caa a22002652 4500
001	SPR045685835
003	DE-627
005	20230519165523.0
007	cr uuu---uuuuu
008	211127s2021 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1186/s40486-021-00140-5 \|2 doi
035			\|a (DE-627)SPR045685835
035			\|a (SPR)s40486-021-00140-5-e
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
082	0	4	\|a 540 \|q ASE
100	1		\|a Chae, Uikyu \|e verfasserin \|4 aut
245	1	0	\|a CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
264		1	\|c 2021
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
500			\|a © The Author(s) 2021
520			\|a Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz.
650		4	\|a CMOS VCO \|7 (dpeaa)DE-He213
650		4	\|a MEMS tunable inductor \|7 (dpeaa)DE-He213
650		4	\|a RF MEMS \|7 (dpeaa)DE-He213
700	1		\|a Park, Jeongsoo \|e verfasserin \|4 aut
700	1		\|a Kim, Jeong-Geun \|e verfasserin \|4 aut
700	1		\|a Yu, Hyun-Yong \|e verfasserin \|4 aut
700	1		\|a Cho, Il-Joo \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Micro and Nano Systems Letters \|d Berlin : SpringerOpen, 2013 \|g 9(2021), 1 vom: 26. Nov. \|w (DE-627)757132898 \|w (DE-600)2728392-6 \|x 2213-9621 \|7 nnns
773	1	8	\|g volume:9 \|g year:2021 \|g number:1 \|g day:26 \|g month:11
856	4	0	\|u https://dx.doi.org/10.1186/s40486-021-00140-5 \|z kostenfrei \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_SPRINGER
912			\|a SSG-OLC-PHA
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 9 \|j 2021 \|e 1 \|b 26 \|c 11

Indexfelder

author_variant	u c uc j p jp j g k jgk h y y hyy i j c ijc
matchkey_str	article:22139621:2021----::msotgcnrleoclaowthgpromne
hierarchy_sort_str	2021
publishDate	2021
allfields	10.1186/s40486-021-00140-5 doi (DE-627)SPR045685835 (SPR)s40486-021-00140-5-e DE-627 ger DE-627 rakwb eng 540 ASE Chae, Uikyu verfasserin aut CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz. CMOS VCO (dpeaa)DE-He213 MEMS tunable inductor (dpeaa)DE-He213 RF MEMS (dpeaa)DE-He213 Park, Jeongsoo verfasserin aut Kim, Jeong-Geun verfasserin aut Yu, Hyun-Yong verfasserin aut Cho, Il-Joo verfasserin aut Enthalten in Micro and Nano Systems Letters Berlin : SpringerOpen, 2013 9(2021), 1 vom: 26. Nov. (DE-627)757132898 (DE-600)2728392-6 2213-9621 nnns volume:9 year:2021 number:1 day:26 month:11 https://dx.doi.org/10.1186/s40486-021-00140-5 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2021 1 26 11
spelling	10.1186/s40486-021-00140-5 doi (DE-627)SPR045685835 (SPR)s40486-021-00140-5-e DE-627 ger DE-627 rakwb eng 540 ASE Chae, Uikyu verfasserin aut CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz. CMOS VCO (dpeaa)DE-He213 MEMS tunable inductor (dpeaa)DE-He213 RF MEMS (dpeaa)DE-He213 Park, Jeongsoo verfasserin aut Kim, Jeong-Geun verfasserin aut Yu, Hyun-Yong verfasserin aut Cho, Il-Joo verfasserin aut Enthalten in Micro and Nano Systems Letters Berlin : SpringerOpen, 2013 9(2021), 1 vom: 26. Nov. (DE-627)757132898 (DE-600)2728392-6 2213-9621 nnns volume:9 year:2021 number:1 day:26 month:11 https://dx.doi.org/10.1186/s40486-021-00140-5 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2021 1 26 11
allfields_unstemmed	10.1186/s40486-021-00140-5 doi (DE-627)SPR045685835 (SPR)s40486-021-00140-5-e DE-627 ger DE-627 rakwb eng 540 ASE Chae, Uikyu verfasserin aut CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz. CMOS VCO (dpeaa)DE-He213 MEMS tunable inductor (dpeaa)DE-He213 RF MEMS (dpeaa)DE-He213 Park, Jeongsoo verfasserin aut Kim, Jeong-Geun verfasserin aut Yu, Hyun-Yong verfasserin aut Cho, Il-Joo verfasserin aut Enthalten in Micro and Nano Systems Letters Berlin : SpringerOpen, 2013 9(2021), 1 vom: 26. Nov. (DE-627)757132898 (DE-600)2728392-6 2213-9621 nnns volume:9 year:2021 number:1 day:26 month:11 https://dx.doi.org/10.1186/s40486-021-00140-5 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2021 1 26 11
allfieldsGer	10.1186/s40486-021-00140-5 doi (DE-627)SPR045685835 (SPR)s40486-021-00140-5-e DE-627 ger DE-627 rakwb eng 540 ASE Chae, Uikyu verfasserin aut CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz. CMOS VCO (dpeaa)DE-He213 MEMS tunable inductor (dpeaa)DE-He213 RF MEMS (dpeaa)DE-He213 Park, Jeongsoo verfasserin aut Kim, Jeong-Geun verfasserin aut Yu, Hyun-Yong verfasserin aut Cho, Il-Joo verfasserin aut Enthalten in Micro and Nano Systems Letters Berlin : SpringerOpen, 2013 9(2021), 1 vom: 26. Nov. (DE-627)757132898 (DE-600)2728392-6 2213-9621 nnns volume:9 year:2021 number:1 day:26 month:11 https://dx.doi.org/10.1186/s40486-021-00140-5 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2021 1 26 11
allfieldsSound	10.1186/s40486-021-00140-5 doi (DE-627)SPR045685835 (SPR)s40486-021-00140-5-e DE-627 ger DE-627 rakwb eng 540 ASE Chae, Uikyu verfasserin aut CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz. CMOS VCO (dpeaa)DE-He213 MEMS tunable inductor (dpeaa)DE-He213 RF MEMS (dpeaa)DE-He213 Park, Jeongsoo verfasserin aut Kim, Jeong-Geun verfasserin aut Yu, Hyun-Yong verfasserin aut Cho, Il-Joo verfasserin aut Enthalten in Micro and Nano Systems Letters Berlin : SpringerOpen, 2013 9(2021), 1 vom: 26. Nov. (DE-627)757132898 (DE-600)2728392-6 2213-9621 nnns volume:9 year:2021 number:1 day:26 month:11 https://dx.doi.org/10.1186/s40486-021-00140-5 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2021 1 26 11
language	English
source	Enthalten in Micro and Nano Systems Letters 9(2021), 1 vom: 26. Nov. volume:9 year:2021 number:1 day:26 month:11
sourceStr	Enthalten in Micro and Nano Systems Letters 9(2021), 1 vom: 26. Nov. volume:9 year:2021 number:1 day:26 month:11
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	CMOS VCO MEMS tunable inductor RF MEMS
dewey-raw	540
isfreeaccess_bool	true
container_title	Micro and Nano Systems Letters
authorswithroles_txt_mv	Chae, Uikyu @@aut@@ Park, Jeongsoo @@aut@@ Kim, Jeong-Geun @@aut@@ Yu, Hyun-Yong @@aut@@ Cho, Il-Joo @@aut@@
publishDateDaySort_date	2021-11-26T00:00:00Z
hierarchy_top_id	757132898
dewey-sort	3540
id	SPR045685835
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR045685835</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230519165523.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">211127s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1186/s40486-021-00140-5</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR045685835</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s40486-021-00140-5-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chae, Uikyu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s) 2021</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS VCO</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MEMS tunable inductor</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">RF MEMS</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Park, Jeongsoo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Jeong-Geun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yu, Hyun-Yong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cho, Il-Joo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Micro and Nano Systems Letters</subfield><subfield code="d">Berlin : SpringerOpen, 2013</subfield><subfield code="g">9(2021), 1 vom: 26. Nov.</subfield><subfield code="w">(DE-627)757132898</subfield><subfield code="w">(DE-600)2728392-6</subfield><subfield code="x">2213-9621</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:9</subfield><subfield code="g">year:2021</subfield><subfield code="g">number:1</subfield><subfield code="g">day:26</subfield><subfield code="g">month:11</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1186/s40486-021-00140-5</subfield><subfield code="z">kostenfrei</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">9</subfield><subfield code="j">2021</subfield><subfield code="e">1</subfield><subfield code="b">26</subfield><subfield code="c">11</subfield></datafield></record></collection>
author	Chae, Uikyu
spellingShingle	Chae, Uikyu ddc 540 misc CMOS VCO misc MEMS tunable inductor misc RF MEMS CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
authorStr	Chae, Uikyu
ppnlink_with_tag_str_mv	@@773@@(DE-627)757132898
format	electronic Article
dewey-ones	540 - Chemistry & allied sciences
delete_txt_mv	keep
author_role	aut aut aut aut aut
collection	springer
remote_str	true
illustrated	Not Illustrated
issn	2213-9621
topic_title	540 ASE CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor CMOS VCO (dpeaa)DE-He213 MEMS tunable inductor (dpeaa)DE-He213 RF MEMS (dpeaa)DE-He213
topic	ddc 540 misc CMOS VCO misc MEMS tunable inductor misc RF MEMS
topic_unstemmed	ddc 540 misc CMOS VCO misc MEMS tunable inductor misc RF MEMS
topic_browse	ddc 540 misc CMOS VCO misc MEMS tunable inductor misc RF MEMS
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Micro and Nano Systems Letters
hierarchy_parent_id	757132898
dewey-tens	540 - Chemistry
hierarchy_top_title	Micro and Nano Systems Letters
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)757132898 (DE-600)2728392-6
title	CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
ctrlnum	(DE-627)SPR045685835 (SPR)s40486-021-00140-5-e
title_full	CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
author_sort	Chae, Uikyu
journal	Micro and Nano Systems Letters
journalStr	Micro and Nano Systems Letters
lang_code	eng
isOA_bool	true
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	2021
contenttype_str_mv	txt
author_browse	Chae, Uikyu Park, Jeongsoo Kim, Jeong-Geun Yu, Hyun-Yong Cho, Il-Joo
container_volume	9
class	540 ASE
format_se	Elektronische Aufsätze
author-letter	Chae, Uikyu
doi_str_mv	10.1186/s40486-021-00140-5
dewey-full	540
author2-role	verfasserin
title_sort	cmos voltage-controlled oscillator with high-performance mems tunable inductor
title_auth	CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
abstract	Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz. © The Author(s) 2021
abstractGer	Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz. © The Author(s) 2021
abstract_unstemmed	Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz. © The Author(s) 2021
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	1
title_short	CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
url	https://dx.doi.org/10.1186/s40486-021-00140-5
remote_bool	true
author2	Park, Jeongsoo Kim, Jeong-Geun Yu, Hyun-Yong Cho, Il-Joo
author2Str	Park, Jeongsoo Kim, Jeong-Geun Yu, Hyun-Yong Cho, Il-Joo
ppnlink	757132898
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.1186/s40486-021-00140-5
up_date	2024-07-03T17:37:58.858Z
_version_	1803580372541243392
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR045685835</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230519165523.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">211127s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1186/s40486-021-00140-5</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR045685835</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s40486-021-00140-5-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chae, Uikyu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s) 2021</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have difficulty in achieving high RF performance due to the low Q-factor of the inductor. In addition, previously reported CMOS VCOs integrated with MEMS inductors have used CMOS switches for tuning frequency bands, but they also had large signal losses on the switch. Herein, we propose a CMOS VCO that is integrated with a MEMS tunable inductor that tunes the frequency band with three MEMS switches. The proposed MEMS tunable inductor enables us to achieve high RF performance due to the suspended structure, and RF MEMS switches enable lower signal loss than CMOS switches. In this work, we successfully fabricated the proposed CMOS VCO integrated with a MEMS tunable inductor using the flip-chip bonding process, and we measured oscillation frequencies according to the actuation of the three switches. The oscillation powers were measured as − 3.03 dBm 1.39 GHz, − 5.80 @ 1.98 GHz, − 7.44 dBm @ 2.81 GHz, and − 8.77 dBm @ 3.68 GHz.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS VCO</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MEMS tunable inductor</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">RF MEMS</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Park, Jeongsoo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Jeong-Geun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yu, Hyun-Yong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cho, Il-Joo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Micro and Nano Systems Letters</subfield><subfield code="d">Berlin : SpringerOpen, 2013</subfield><subfield code="g">9(2021), 1 vom: 26. Nov.</subfield><subfield code="w">(DE-627)757132898</subfield><subfield code="w">(DE-600)2728392-6</subfield><subfield code="x">2213-9621</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:9</subfield><subfield code="g">year:2021</subfield><subfield code="g">number:1</subfield><subfield code="g">day:26</subfield><subfield code="g">month:11</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1186/s40486-021-00140-5</subfield><subfield code="z">kostenfrei</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">9</subfield><subfield code="j">2021</subfield><subfield code="e">1</subfield><subfield code="b">26</subfield><subfield code="c">11</subfield></datafield></record></collection>
score	7.3985147

Nicht das Richtige dabei?

Schreiben Sie uns!

CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?