Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films
Abstract Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall...
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| Autor*in: |
Mayandi, J. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Schlagwörter: |
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| Anmerkung: |
© The Author(s) 2021 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 51(2021), 2 vom: 01. Dez., Seite 803-812 |
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| Übergeordnetes Werk: |
volume:51 ; year:2021 ; number:2 ; day:01 ; month:12 ; pages:803-812 |
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| DOI / URN: |
10.1007/s11664-021-09343-3 |
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| Katalog-ID: |
SPR045988692 |
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| 520 | |a Abstract Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall effect measurements down to 10 K to study the transport mechanisms and correlate that with structural measurements by x-ray diffraction and scanning electron microscopy. The measured/effective resistivity could be varied between 1.3 × $ 10^{−4} $ Ω cm and 1.2 × $ 10^{−3} $ Ω cm by post-deposition processing. The temperature coefficient of resistivity could be varied between − 1.2 × $ 10^{−3} $ $ K^{−1} $ through 0 and to + 0.7 × $ 10^{−3} $ $ K^{−1} $. The key to the variation is controlling the morphology and topology of the film. The conduction of charge carriers is dominated by the relative contribution of weak localization and alloy scattering by varying the degree of disorder in the metallic high-entropy alloy and its topology. | ||
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| 700 | 1 | |a Finstad, T. G. |0 (orcid)0000-0003-1293-3126 |4 aut | |
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| 700 | 1 | |a Løvvik, O. M. |4 aut | |
| 700 | 1 | |a Diplas, S. |4 aut | |
| 700 | 1 | |a Carvalho, P. A. |4 aut | |
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10.1007/s11664-021-09343-3 doi (DE-627)SPR045988692 (SPR)s11664-021-09343-3-e DE-627 ger DE-627 rakwb eng Mayandi, J. verfasserin aut Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall effect measurements down to 10 K to study the transport mechanisms and correlate that with structural measurements by x-ray diffraction and scanning electron microscopy. The measured/effective resistivity could be varied between 1.3 × $ 10^{−4} $ Ω cm and 1.2 × $ 10^{−3} $ Ω cm by post-deposition processing. The temperature coefficient of resistivity could be varied between − 1.2 × $ 10^{−3} $ $ K^{−1} $ through 0 and to + 0.7 × $ 10^{−3} $ $ K^{−1} $. The key to the variation is controlling the morphology and topology of the film. The conduction of charge carriers is dominated by the relative contribution of weak localization and alloy scattering by varying the degree of disorder in the metallic high-entropy alloy and its topology. High-entropy alloy (dpeaa)DE-He213 thin film current transport (dpeaa)DE-He213 sputtering (dpeaa)DE-He213 Finstad, T. G. (orcid)0000-0003-1293-3126 aut Stange, M. aut Vásque, G. C. aut Sunding, M. F. aut Løvvik, O. M. aut Diplas, S. aut Carvalho, P. A. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 51(2021), 2 vom: 01. Dez., Seite 803-812 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:51 year:2021 number:2 day:01 month:12 pages:803-812 https://dx.doi.org/10.1007/s11664-021-09343-3 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 51 2021 2 01 12 803-812 |
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10.1007/s11664-021-09343-3 doi (DE-627)SPR045988692 (SPR)s11664-021-09343-3-e DE-627 ger DE-627 rakwb eng Mayandi, J. verfasserin aut Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall effect measurements down to 10 K to study the transport mechanisms and correlate that with structural measurements by x-ray diffraction and scanning electron microscopy. The measured/effective resistivity could be varied between 1.3 × $ 10^{−4} $ Ω cm and 1.2 × $ 10^{−3} $ Ω cm by post-deposition processing. The temperature coefficient of resistivity could be varied between − 1.2 × $ 10^{−3} $ $ K^{−1} $ through 0 and to + 0.7 × $ 10^{−3} $ $ K^{−1} $. The key to the variation is controlling the morphology and topology of the film. The conduction of charge carriers is dominated by the relative contribution of weak localization and alloy scattering by varying the degree of disorder in the metallic high-entropy alloy and its topology. High-entropy alloy (dpeaa)DE-He213 thin film current transport (dpeaa)DE-He213 sputtering (dpeaa)DE-He213 Finstad, T. G. (orcid)0000-0003-1293-3126 aut Stange, M. aut Vásque, G. C. aut Sunding, M. F. aut Løvvik, O. M. aut Diplas, S. aut Carvalho, P. A. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 51(2021), 2 vom: 01. Dez., Seite 803-812 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:51 year:2021 number:2 day:01 month:12 pages:803-812 https://dx.doi.org/10.1007/s11664-021-09343-3 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 51 2021 2 01 12 803-812 |
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10.1007/s11664-021-09343-3 doi (DE-627)SPR045988692 (SPR)s11664-021-09343-3-e DE-627 ger DE-627 rakwb eng Mayandi, J. verfasserin aut Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall effect measurements down to 10 K to study the transport mechanisms and correlate that with structural measurements by x-ray diffraction and scanning electron microscopy. The measured/effective resistivity could be varied between 1.3 × $ 10^{−4} $ Ω cm and 1.2 × $ 10^{−3} $ Ω cm by post-deposition processing. The temperature coefficient of resistivity could be varied between − 1.2 × $ 10^{−3} $ $ K^{−1} $ through 0 and to + 0.7 × $ 10^{−3} $ $ K^{−1} $. The key to the variation is controlling the morphology and topology of the film. The conduction of charge carriers is dominated by the relative contribution of weak localization and alloy scattering by varying the degree of disorder in the metallic high-entropy alloy and its topology. High-entropy alloy (dpeaa)DE-He213 thin film current transport (dpeaa)DE-He213 sputtering (dpeaa)DE-He213 Finstad, T. G. (orcid)0000-0003-1293-3126 aut Stange, M. aut Vásque, G. C. aut Sunding, M. F. aut Løvvik, O. M. aut Diplas, S. aut Carvalho, P. A. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 51(2021), 2 vom: 01. Dez., Seite 803-812 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:51 year:2021 number:2 day:01 month:12 pages:803-812 https://dx.doi.org/10.1007/s11664-021-09343-3 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 51 2021 2 01 12 803-812 |
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10.1007/s11664-021-09343-3 doi (DE-627)SPR045988692 (SPR)s11664-021-09343-3-e DE-627 ger DE-627 rakwb eng Mayandi, J. verfasserin aut Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall effect measurements down to 10 K to study the transport mechanisms and correlate that with structural measurements by x-ray diffraction and scanning electron microscopy. The measured/effective resistivity could be varied between 1.3 × $ 10^{−4} $ Ω cm and 1.2 × $ 10^{−3} $ Ω cm by post-deposition processing. The temperature coefficient of resistivity could be varied between − 1.2 × $ 10^{−3} $ $ K^{−1} $ through 0 and to + 0.7 × $ 10^{−3} $ $ K^{−1} $. The key to the variation is controlling the morphology and topology of the film. The conduction of charge carriers is dominated by the relative contribution of weak localization and alloy scattering by varying the degree of disorder in the metallic high-entropy alloy and its topology. High-entropy alloy (dpeaa)DE-He213 thin film current transport (dpeaa)DE-He213 sputtering (dpeaa)DE-He213 Finstad, T. G. (orcid)0000-0003-1293-3126 aut Stange, M. aut Vásque, G. C. aut Sunding, M. F. aut Løvvik, O. M. aut Diplas, S. aut Carvalho, P. A. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 51(2021), 2 vom: 01. Dez., Seite 803-812 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:51 year:2021 number:2 day:01 month:12 pages:803-812 https://dx.doi.org/10.1007/s11664-021-09343-3 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 51 2021 2 01 12 803-812 |
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10.1007/s11664-021-09343-3 doi (DE-627)SPR045988692 (SPR)s11664-021-09343-3-e DE-627 ger DE-627 rakwb eng Mayandi, J. verfasserin aut Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2021 Abstract Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall effect measurements down to 10 K to study the transport mechanisms and correlate that with structural measurements by x-ray diffraction and scanning electron microscopy. The measured/effective resistivity could be varied between 1.3 × $ 10^{−4} $ Ω cm and 1.2 × $ 10^{−3} $ Ω cm by post-deposition processing. The temperature coefficient of resistivity could be varied between − 1.2 × $ 10^{−3} $ $ K^{−1} $ through 0 and to + 0.7 × $ 10^{−3} $ $ K^{−1} $. The key to the variation is controlling the morphology and topology of the film. The conduction of charge carriers is dominated by the relative contribution of weak localization and alloy scattering by varying the degree of disorder in the metallic high-entropy alloy and its topology. High-entropy alloy (dpeaa)DE-He213 thin film current transport (dpeaa)DE-He213 sputtering (dpeaa)DE-He213 Finstad, T. G. (orcid)0000-0003-1293-3126 aut Stange, M. aut Vásque, G. C. aut Sunding, M. F. aut Løvvik, O. M. aut Diplas, S. aut Carvalho, P. A. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 51(2021), 2 vom: 01. Dez., Seite 803-812 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:51 year:2021 number:2 day:01 month:12 pages:803-812 https://dx.doi.org/10.1007/s11664-021-09343-3 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 51 2021 2 01 12 803-812 |
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Mayandi, J. @@aut@@ Finstad, T. G. @@aut@@ Stange, M. @@aut@@ Vásque, G. C. @@aut@@ Sunding, M. F. @@aut@@ Løvvik, O. M. @@aut@@ Diplas, S. @@aut@@ Carvalho, P. A. @@aut@@ |
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Mayandi, J. |
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Mayandi, J. misc High-entropy alloy misc thin film current transport misc sputtering Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films |
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Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films High-entropy alloy (dpeaa)DE-He213 thin film current transport (dpeaa)DE-He213 sputtering (dpeaa)DE-He213 |
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Mayandi, J. Finstad, T. G. Stange, M. Vásque, G. C. Sunding, M. F. Løvvik, O. M. Diplas, S. Carvalho, P. A. |
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controlling the electrical properties of reactively sputtered high entropy alloy crfenicocu films |
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Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films |
| abstract |
Abstract Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall effect measurements down to 10 K to study the transport mechanisms and correlate that with structural measurements by x-ray diffraction and scanning electron microscopy. The measured/effective resistivity could be varied between 1.3 × $ 10^{−4} $ Ω cm and 1.2 × $ 10^{−3} $ Ω cm by post-deposition processing. The temperature coefficient of resistivity could be varied between − 1.2 × $ 10^{−3} $ $ K^{−1} $ through 0 and to + 0.7 × $ 10^{−3} $ $ K^{−1} $. The key to the variation is controlling the morphology and topology of the film. The conduction of charge carriers is dominated by the relative contribution of weak localization and alloy scattering by varying the degree of disorder in the metallic high-entropy alloy and its topology. © The Author(s) 2021 |
| abstractGer |
Abstract Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall effect measurements down to 10 K to study the transport mechanisms and correlate that with structural measurements by x-ray diffraction and scanning electron microscopy. The measured/effective resistivity could be varied between 1.3 × $ 10^{−4} $ Ω cm and 1.2 × $ 10^{−3} $ Ω cm by post-deposition processing. The temperature coefficient of resistivity could be varied between − 1.2 × $ 10^{−3} $ $ K^{−1} $ through 0 and to + 0.7 × $ 10^{−3} $ $ K^{−1} $. The key to the variation is controlling the morphology and topology of the film. The conduction of charge carriers is dominated by the relative contribution of weak localization and alloy scattering by varying the degree of disorder in the metallic high-entropy alloy and its topology. © The Author(s) 2021 |
| abstract_unstemmed |
Abstract Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall effect measurements down to 10 K to study the transport mechanisms and correlate that with structural measurements by x-ray diffraction and scanning electron microscopy. The measured/effective resistivity could be varied between 1.3 × $ 10^{−4} $ Ω cm and 1.2 × $ 10^{−3} $ Ω cm by post-deposition processing. The temperature coefficient of resistivity could be varied between − 1.2 × $ 10^{−3} $ $ K^{−1} $ through 0 and to + 0.7 × $ 10^{−3} $ $ K^{−1} $. The key to the variation is controlling the morphology and topology of the film. The conduction of charge carriers is dominated by the relative contribution of weak localization and alloy scattering by varying the degree of disorder in the metallic high-entropy alloy and its topology. © The Author(s) 2021 |
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Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films |
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Finstad, T. G. Stange, M. Vásque, G. C. Sunding, M. F. Løvvik, O. M. Diplas, S. Carvalho, P. A. |
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Finstad, T. G. Stange, M. Vásque, G. C. Sunding, M. F. Løvvik, O. M. Diplas, S. Carvalho, P. A. |
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| score |
7.3986883 |