Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation
Abstract In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Singh, Rahul [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Nature B.V. 2021 |
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| Übergeordnetes Werk: |
Enthalten in: Silicon - Dordrecht : Springer Netherlands, 2009, 14(2021), 8 vom: 09. Juni, Seite 4053-4062 |
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| Übergeordnetes Werk: |
volume:14 ; year:2021 ; number:8 ; day:09 ; month:06 ; pages:4053-4062 |
| Links: |
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| DOI / URN: |
10.1007/s12633-021-01191-4 |
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| Katalog-ID: |
SPR046920595 |
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| 100 | 1 | |a Singh, Rahul |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation |
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| 520 | |a Abstract In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage ($ V_{TH} $), $ I_{ON} $ current, $ I_{OFF} $ current, Subthreshold Swing (SS), and $ I_{DS} $ current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode. | ||
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| 650 | 4 | |a Biosensors |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a UBS |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a ABS |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a OBS |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Nano gap |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Cavity |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Biomolecule |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Kaim, Shweta |4 aut | |
| 700 | 1 | |a MedhaShree, Rani |4 aut | |
| 700 | 1 | |a Kumar, Anil |4 aut | |
| 700 | 1 | |a Kale, Sumit |0 (orcid)0000-0001-6131-2153 |4 aut | |
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10.1007/s12633-021-01191-4 doi (DE-627)SPR046920595 (SPR)s12633-021-01191-4-e DE-627 ger DE-627 rakwb eng Singh, Rahul verfasserin aut Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Nature B.V. 2021 Abstract In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage ($ V_{TH} $), $ I_{ON} $ current, $ I_{OFF} $ current, Subthreshold Swing (SS), and $ I_{DS} $ current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode. Dielectric engineering (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 Biosensors (dpeaa)DE-He213 UBS (dpeaa)DE-He213 ABS (dpeaa)DE-He213 OBS (dpeaa)DE-He213 Nano gap (dpeaa)DE-He213 Cavity (dpeaa)DE-He213 Biomolecule (dpeaa)DE-He213 Kaim, Shweta aut MedhaShree, Rani aut Kumar, Anil aut Kale, Sumit (orcid)0000-0001-6131-2153 aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 14(2021), 8 vom: 09. Juni, Seite 4053-4062 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:14 year:2021 number:8 day:09 month:06 pages:4053-4062 https://dx.doi.org/10.1007/s12633-021-01191-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 14 2021 8 09 06 4053-4062 |
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10.1007/s12633-021-01191-4 doi (DE-627)SPR046920595 (SPR)s12633-021-01191-4-e DE-627 ger DE-627 rakwb eng Singh, Rahul verfasserin aut Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Nature B.V. 2021 Abstract In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage ($ V_{TH} $), $ I_{ON} $ current, $ I_{OFF} $ current, Subthreshold Swing (SS), and $ I_{DS} $ current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode. Dielectric engineering (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 Biosensors (dpeaa)DE-He213 UBS (dpeaa)DE-He213 ABS (dpeaa)DE-He213 OBS (dpeaa)DE-He213 Nano gap (dpeaa)DE-He213 Cavity (dpeaa)DE-He213 Biomolecule (dpeaa)DE-He213 Kaim, Shweta aut MedhaShree, Rani aut Kumar, Anil aut Kale, Sumit (orcid)0000-0001-6131-2153 aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 14(2021), 8 vom: 09. Juni, Seite 4053-4062 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:14 year:2021 number:8 day:09 month:06 pages:4053-4062 https://dx.doi.org/10.1007/s12633-021-01191-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 14 2021 8 09 06 4053-4062 |
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10.1007/s12633-021-01191-4 doi (DE-627)SPR046920595 (SPR)s12633-021-01191-4-e DE-627 ger DE-627 rakwb eng Singh, Rahul verfasserin aut Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Nature B.V. 2021 Abstract In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage ($ V_{TH} $), $ I_{ON} $ current, $ I_{OFF} $ current, Subthreshold Swing (SS), and $ I_{DS} $ current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode. Dielectric engineering (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 Biosensors (dpeaa)DE-He213 UBS (dpeaa)DE-He213 ABS (dpeaa)DE-He213 OBS (dpeaa)DE-He213 Nano gap (dpeaa)DE-He213 Cavity (dpeaa)DE-He213 Biomolecule (dpeaa)DE-He213 Kaim, Shweta aut MedhaShree, Rani aut Kumar, Anil aut Kale, Sumit (orcid)0000-0001-6131-2153 aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 14(2021), 8 vom: 09. Juni, Seite 4053-4062 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:14 year:2021 number:8 day:09 month:06 pages:4053-4062 https://dx.doi.org/10.1007/s12633-021-01191-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 14 2021 8 09 06 4053-4062 |
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10.1007/s12633-021-01191-4 doi (DE-627)SPR046920595 (SPR)s12633-021-01191-4-e DE-627 ger DE-627 rakwb eng Singh, Rahul verfasserin aut Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Nature B.V. 2021 Abstract In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage ($ V_{TH} $), $ I_{ON} $ current, $ I_{OFF} $ current, Subthreshold Swing (SS), and $ I_{DS} $ current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode. Dielectric engineering (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 Biosensors (dpeaa)DE-He213 UBS (dpeaa)DE-He213 ABS (dpeaa)DE-He213 OBS (dpeaa)DE-He213 Nano gap (dpeaa)DE-He213 Cavity (dpeaa)DE-He213 Biomolecule (dpeaa)DE-He213 Kaim, Shweta aut MedhaShree, Rani aut Kumar, Anil aut Kale, Sumit (orcid)0000-0001-6131-2153 aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 14(2021), 8 vom: 09. Juni, Seite 4053-4062 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:14 year:2021 number:8 day:09 month:06 pages:4053-4062 https://dx.doi.org/10.1007/s12633-021-01191-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 14 2021 8 09 06 4053-4062 |
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10.1007/s12633-021-01191-4 doi (DE-627)SPR046920595 (SPR)s12633-021-01191-4-e DE-627 ger DE-627 rakwb eng Singh, Rahul verfasserin aut Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Nature B.V. 2021 Abstract In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage ($ V_{TH} $), $ I_{ON} $ current, $ I_{OFF} $ current, Subthreshold Swing (SS), and $ I_{DS} $ current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode. Dielectric engineering (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 Biosensors (dpeaa)DE-He213 UBS (dpeaa)DE-He213 ABS (dpeaa)DE-He213 OBS (dpeaa)DE-He213 Nano gap (dpeaa)DE-He213 Cavity (dpeaa)DE-He213 Biomolecule (dpeaa)DE-He213 Kaim, Shweta aut MedhaShree, Rani aut Kumar, Anil aut Kale, Sumit (orcid)0000-0001-6131-2153 aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 14(2021), 8 vom: 09. Juni, Seite 4053-4062 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:14 year:2021 number:8 day:09 month:06 pages:4053-4062 https://dx.doi.org/10.1007/s12633-021-01191-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 14 2021 8 09 06 4053-4062 |
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The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage ($ V_{TH} $), $ I_{ON} $ current, $ I_{OFF} $ current, Subthreshold Swing (SS), and $ I_{DS} $ current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). 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Singh, Rahul |
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Singh, Rahul misc Dielectric engineering misc Schottky barrier misc Biosensors misc UBS misc ABS misc OBS misc Nano gap misc Cavity misc Biomolecule Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation |
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Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation Dielectric engineering (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 Biosensors (dpeaa)DE-He213 UBS (dpeaa)DE-He213 ABS (dpeaa)DE-He213 OBS (dpeaa)DE-He213 Nano gap (dpeaa)DE-He213 Cavity (dpeaa)DE-He213 Biomolecule (dpeaa)DE-He213 |
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dielectric engineered schottky barrier mosfet for biosensor applications: proposal and investigation |
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Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation |
| abstract |
Abstract In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage ($ V_{TH} $), $ I_{ON} $ current, $ I_{OFF} $ current, Subthreshold Swing (SS), and $ I_{DS} $ current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode. © Springer Nature B.V. 2021 |
| abstractGer |
Abstract In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage ($ V_{TH} $), $ I_{ON} $ current, $ I_{OFF} $ current, Subthreshold Swing (SS), and $ I_{DS} $ current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode. © Springer Nature B.V. 2021 |
| abstract_unstemmed |
Abstract In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage ($ V_{TH} $), $ I_{ON} $ current, $ I_{OFF} $ current, Subthreshold Swing (SS), and $ I_{DS} $ current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode. © Springer Nature B.V. 2021 |
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| title_short |
Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation |
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https://dx.doi.org/10.1007/s12633-021-01191-4 |
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Kaim, Shweta MedhaShree, Rani Kumar, Anil Kale, Sumit |
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Kaim, Shweta MedhaShree, Rani Kumar, Anil Kale, Sumit |
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10.1007/s12633-021-01191-4 |
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2024-07-04T01:02:49.167Z |
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| score |
7.3996487 |