A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation

Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and ave...
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Autor*in:	Van Duong, Thiet [verfasserIn] Chung, Nguyen Xuan Phan, Hong Ngoc Nguyen, Hong Tuan Nguyen, Dung Dinh Le, Lu Trong Van Pham, Nhat

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Anmerkung:	© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 33(2022), 19 vom: 08. Juni, Seite 15385-15392
Übergeordnetes Werk:	volume:33 ; year:2022 ; number:19 ; day:08 ; month:06 ; pages:15385-15392

Links:	Volltext

DOI / URN:	10.1007/s10854-022-08446-9

Katalog-ID:	SPR047459700

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520			\|a Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and average area, respectively. The results were confirmed by Scanning Electron Microscope, Transmission Electron Microscope, and Atomic Force Microscope. X-ray diffraction and Raman spectra indicate that the SnSe nanosheets have high crystalline quality along a-axis. The SnSe nanostructured thin films were prepared in various thicknesses from 350 to 650 nm. The highest power factor value is achieved at 450 nm in 375–600 K temperature range. A simple method of fabrication and controllable thermoelectric properties of SnSe nanostructured thin films as well as other two-dimensional (2D) materials are introduced.
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allfields	10.1007/s10854-022-08446-9 doi (DE-627)SPR047459700 (SPR)s10854-022-08446-9-e DE-627 ger DE-627 rakwb eng Van Duong, Thiet verfasserin (orcid)0000-0002-6302-8129 aut A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and average area, respectively. The results were confirmed by Scanning Electron Microscope, Transmission Electron Microscope, and Atomic Force Microscope. X-ray diffraction and Raman spectra indicate that the SnSe nanosheets have high crystalline quality along a-axis. The SnSe nanostructured thin films were prepared in various thicknesses from 350 to 650 nm. The highest power factor value is achieved at 450 nm in 375–600 K temperature range. A simple method of fabrication and controllable thermoelectric properties of SnSe nanostructured thin films as well as other two-dimensional (2D) materials are introduced. Chung, Nguyen Xuan aut Phan, Hong Ngoc aut Nguyen, Hong Tuan aut Nguyen, Dung Dinh aut Le, Lu Trong aut Van Pham, Nhat aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 33(2022), 19 vom: 08. Juni, Seite 15385-15392 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:33 year:2022 number:19 day:08 month:06 pages:15385-15392 https://dx.doi.org/10.1007/s10854-022-08446-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 33 2022 19 08 06 15385-15392
spelling	10.1007/s10854-022-08446-9 doi (DE-627)SPR047459700 (SPR)s10854-022-08446-9-e DE-627 ger DE-627 rakwb eng Van Duong, Thiet verfasserin (orcid)0000-0002-6302-8129 aut A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and average area, respectively. The results were confirmed by Scanning Electron Microscope, Transmission Electron Microscope, and Atomic Force Microscope. X-ray diffraction and Raman spectra indicate that the SnSe nanosheets have high crystalline quality along a-axis. The SnSe nanostructured thin films were prepared in various thicknesses from 350 to 650 nm. The highest power factor value is achieved at 450 nm in 375–600 K temperature range. A simple method of fabrication and controllable thermoelectric properties of SnSe nanostructured thin films as well as other two-dimensional (2D) materials are introduced. Chung, Nguyen Xuan aut Phan, Hong Ngoc aut Nguyen, Hong Tuan aut Nguyen, Dung Dinh aut Le, Lu Trong aut Van Pham, Nhat aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 33(2022), 19 vom: 08. Juni, Seite 15385-15392 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:33 year:2022 number:19 day:08 month:06 pages:15385-15392 https://dx.doi.org/10.1007/s10854-022-08446-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 33 2022 19 08 06 15385-15392
allfields_unstemmed	10.1007/s10854-022-08446-9 doi (DE-627)SPR047459700 (SPR)s10854-022-08446-9-e DE-627 ger DE-627 rakwb eng Van Duong, Thiet verfasserin (orcid)0000-0002-6302-8129 aut A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and average area, respectively. The results were confirmed by Scanning Electron Microscope, Transmission Electron Microscope, and Atomic Force Microscope. X-ray diffraction and Raman spectra indicate that the SnSe nanosheets have high crystalline quality along a-axis. The SnSe nanostructured thin films were prepared in various thicknesses from 350 to 650 nm. The highest power factor value is achieved at 450 nm in 375–600 K temperature range. A simple method of fabrication and controllable thermoelectric properties of SnSe nanostructured thin films as well as other two-dimensional (2D) materials are introduced. Chung, Nguyen Xuan aut Phan, Hong Ngoc aut Nguyen, Hong Tuan aut Nguyen, Dung Dinh aut Le, Lu Trong aut Van Pham, Nhat aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 33(2022), 19 vom: 08. Juni, Seite 15385-15392 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:33 year:2022 number:19 day:08 month:06 pages:15385-15392 https://dx.doi.org/10.1007/s10854-022-08446-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 33 2022 19 08 06 15385-15392
allfieldsGer	10.1007/s10854-022-08446-9 doi (DE-627)SPR047459700 (SPR)s10854-022-08446-9-e DE-627 ger DE-627 rakwb eng Van Duong, Thiet verfasserin (orcid)0000-0002-6302-8129 aut A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and average area, respectively. The results were confirmed by Scanning Electron Microscope, Transmission Electron Microscope, and Atomic Force Microscope. X-ray diffraction and Raman spectra indicate that the SnSe nanosheets have high crystalline quality along a-axis. The SnSe nanostructured thin films were prepared in various thicknesses from 350 to 650 nm. The highest power factor value is achieved at 450 nm in 375–600 K temperature range. A simple method of fabrication and controllable thermoelectric properties of SnSe nanostructured thin films as well as other two-dimensional (2D) materials are introduced. Chung, Nguyen Xuan aut Phan, Hong Ngoc aut Nguyen, Hong Tuan aut Nguyen, Dung Dinh aut Le, Lu Trong aut Van Pham, Nhat aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 33(2022), 19 vom: 08. Juni, Seite 15385-15392 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:33 year:2022 number:19 day:08 month:06 pages:15385-15392 https://dx.doi.org/10.1007/s10854-022-08446-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 33 2022 19 08 06 15385-15392
allfieldsSound	10.1007/s10854-022-08446-9 doi (DE-627)SPR047459700 (SPR)s10854-022-08446-9-e DE-627 ger DE-627 rakwb eng Van Duong, Thiet verfasserin (orcid)0000-0002-6302-8129 aut A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and average area, respectively. The results were confirmed by Scanning Electron Microscope, Transmission Electron Microscope, and Atomic Force Microscope. X-ray diffraction and Raman spectra indicate that the SnSe nanosheets have high crystalline quality along a-axis. The SnSe nanostructured thin films were prepared in various thicknesses from 350 to 650 nm. The highest power factor value is achieved at 450 nm in 375–600 K temperature range. A simple method of fabrication and controllable thermoelectric properties of SnSe nanostructured thin films as well as other two-dimensional (2D) materials are introduced. Chung, Nguyen Xuan aut Phan, Hong Ngoc aut Nguyen, Hong Tuan aut Nguyen, Dung Dinh aut Le, Lu Trong aut Van Pham, Nhat aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 33(2022), 19 vom: 08. Juni, Seite 15385-15392 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:33 year:2022 number:19 day:08 month:06 pages:15385-15392 https://dx.doi.org/10.1007/s10854-022-08446-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 33 2022 19 08 06 15385-15392
language	English
source	Enthalten in Journal of materials science 33(2022), 19 vom: 08. Juni, Seite 15385-15392 volume:33 year:2022 number:19 day:08 month:06 pages:15385-15392
sourceStr	Enthalten in Journal of materials science 33(2022), 19 vom: 08. Juni, Seite 15385-15392 volume:33 year:2022 number:19 day:08 month:06 pages:15385-15392
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authorswithroles_txt_mv	Van Duong, Thiet @@aut@@ Chung, Nguyen Xuan @@aut@@ Phan, Hong Ngoc @@aut@@ Nguyen, Hong Tuan @@aut@@ Nguyen, Dung Dinh @@aut@@ Le, Lu Trong @@aut@@ Van Pham, Nhat @@aut@@
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author	Van Duong, Thiet
spellingShingle	Van Duong, Thiet A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation
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topic_title	A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation
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title	A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation
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title_full	A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation
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title_sort	facile way to optimize thermoelectric properties of snse thin films via sonication-assisted liquid-phase exfoliation
title_auth	A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation
abstract	Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and average area, respectively. The results were confirmed by Scanning Electron Microscope, Transmission Electron Microscope, and Atomic Force Microscope. X-ray diffraction and Raman spectra indicate that the SnSe nanosheets have high crystalline quality along a-axis. The SnSe nanostructured thin films were prepared in various thicknesses from 350 to 650 nm. The highest power factor value is achieved at 450 nm in 375–600 K temperature range. A simple method of fabrication and controllable thermoelectric properties of SnSe nanostructured thin films as well as other two-dimensional (2D) materials are introduced. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022
abstractGer	Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and average area, respectively. The results were confirmed by Scanning Electron Microscope, Transmission Electron Microscope, and Atomic Force Microscope. X-ray diffraction and Raman spectra indicate that the SnSe nanosheets have high crystalline quality along a-axis. The SnSe nanostructured thin films were prepared in various thicknesses from 350 to 650 nm. The highest power factor value is achieved at 450 nm in 375–600 K temperature range. A simple method of fabrication and controllable thermoelectric properties of SnSe nanostructured thin films as well as other two-dimensional (2D) materials are introduced. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022
abstract_unstemmed	Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and average area, respectively. The results were confirmed by Scanning Electron Microscope, Transmission Electron Microscope, and Atomic Force Microscope. X-ray diffraction and Raman spectra indicate that the SnSe nanosheets have high crystalline quality along a-axis. The SnSe nanostructured thin films were prepared in various thicknesses from 350 to 650 nm. The highest power factor value is achieved at 450 nm in 375–600 K temperature range. A simple method of fabrication and controllable thermoelectric properties of SnSe nanostructured thin films as well as other two-dimensional (2D) materials are introduced. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022
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title_short	A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation
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author2	Chung, Nguyen Xuan Phan, Hong Ngoc Nguyen, Hong Tuan Nguyen, Dung Dinh Le, Lu Trong Van Pham, Nhat
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doi_str	10.1007/s10854-022-08446-9
up_date	2024-07-04T03:11:48.817Z
_version_	1803616474968883200
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR047459700</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230509103335.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">220701s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-022-08446-9</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR047459700</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10854-022-08446-9-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Van Duong, Thiet</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0002-6302-8129</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="2"><subfield code="a">A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In our work, SnSe nanosheets and nanostructured thin films were successfully synthesized via sonication-assisted exfoliation and coating process. The SnSe nanosheets respond to a uniform lateral size, with two to three single layers by 2.82 nm and 280 $ nm^{2} $ of average thickness and average area, respectively. The results were confirmed by Scanning Electron Microscope, Transmission Electron Microscope, and Atomic Force Microscope. X-ray diffraction and Raman spectra indicate that the SnSe nanosheets have high crystalline quality along a-axis. The SnSe nanostructured thin films were prepared in various thicknesses from 350 to 650 nm. The highest power factor value is achieved at 450 nm in 375–600 K temperature range. A simple method of fabrication and controllable thermoelectric properties of SnSe nanostructured thin films as well as other two-dimensional (2D) materials are introduced.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chung, Nguyen Xuan</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Phan, Hong Ngoc</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nguyen, Hong Tuan</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nguyen, Dung Dinh</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Le, Lu Trong</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Van Pham, Nhat</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990</subfield><subfield code="g">33(2022), 19 vom: 08. 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A facile way to optimize thermoelectric properties of SnSe thin films via sonication-assisted liquid-phase exfoliation

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