Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry

Gespeichert in:

Autor*in:	Kozuka, Shoji [verfasserIn] Hayashi, Masaru Matsunaga, Hideki

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	1993

Schlagwörter:	Silicon carbide single crystal acid pressure decomposition inductively coupled plasma mass spectrometry

Anmerkung:	© The Japan Society for Analytical Chemistry 1993

Übergeordnetes Werk:	Enthalten in: Analytical sciences - [Cham] : Springer International Publishing, 1985, 9(1993), 5 vom: Okt., Seite 735-736
Übergeordnetes Werk:	volume:9 ; year:1993 ; number:5 ; month:10 ; pages:735-736

Links:	Volltext

DOI / URN:	10.2116/analsci.9.735

Katalog-ID:	SPR047561025

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allfields	10.2116/analsci.9.735 doi (DE-627)SPR047561025 (SPR)analsci.9.735-e DE-627 ger DE-627 rakwb eng Kozuka, Shoji verfasserin aut Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Japan Society for Analytical Chemistry 1993 Silicon carbide (dpeaa)DE-He213 single crystal (dpeaa)DE-He213 acid pressure decomposition (dpeaa)DE-He213 inductively coupled plasma mass spectrometry (dpeaa)DE-He213 Hayashi, Masaru aut Matsunaga, Hideki aut Enthalten in Analytical sciences [Cham] : Springer International Publishing, 1985 9(1993), 5 vom: Okt., Seite 735-736 (DE-627)300895925 (DE-600)1483376-1 1348-2246 nnns volume:9 year:1993 number:5 month:10 pages:735-736 https://dx.doi.org/10.2116/analsci.9.735 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 1993 5 10 735-736
spelling	10.2116/analsci.9.735 doi (DE-627)SPR047561025 (SPR)analsci.9.735-e DE-627 ger DE-627 rakwb eng Kozuka, Shoji verfasserin aut Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Japan Society for Analytical Chemistry 1993 Silicon carbide (dpeaa)DE-He213 single crystal (dpeaa)DE-He213 acid pressure decomposition (dpeaa)DE-He213 inductively coupled plasma mass spectrometry (dpeaa)DE-He213 Hayashi, Masaru aut Matsunaga, Hideki aut Enthalten in Analytical sciences [Cham] : Springer International Publishing, 1985 9(1993), 5 vom: Okt., Seite 735-736 (DE-627)300895925 (DE-600)1483376-1 1348-2246 nnns volume:9 year:1993 number:5 month:10 pages:735-736 https://dx.doi.org/10.2116/analsci.9.735 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 1993 5 10 735-736
allfields_unstemmed	10.2116/analsci.9.735 doi (DE-627)SPR047561025 (SPR)analsci.9.735-e DE-627 ger DE-627 rakwb eng Kozuka, Shoji verfasserin aut Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Japan Society for Analytical Chemistry 1993 Silicon carbide (dpeaa)DE-He213 single crystal (dpeaa)DE-He213 acid pressure decomposition (dpeaa)DE-He213 inductively coupled plasma mass spectrometry (dpeaa)DE-He213 Hayashi, Masaru aut Matsunaga, Hideki aut Enthalten in Analytical sciences [Cham] : Springer International Publishing, 1985 9(1993), 5 vom: Okt., Seite 735-736 (DE-627)300895925 (DE-600)1483376-1 1348-2246 nnns volume:9 year:1993 number:5 month:10 pages:735-736 https://dx.doi.org/10.2116/analsci.9.735 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 1993 5 10 735-736
allfieldsGer	10.2116/analsci.9.735 doi (DE-627)SPR047561025 (SPR)analsci.9.735-e DE-627 ger DE-627 rakwb eng Kozuka, Shoji verfasserin aut Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Japan Society for Analytical Chemistry 1993 Silicon carbide (dpeaa)DE-He213 single crystal (dpeaa)DE-He213 acid pressure decomposition (dpeaa)DE-He213 inductively coupled plasma mass spectrometry (dpeaa)DE-He213 Hayashi, Masaru aut Matsunaga, Hideki aut Enthalten in Analytical sciences [Cham] : Springer International Publishing, 1985 9(1993), 5 vom: Okt., Seite 735-736 (DE-627)300895925 (DE-600)1483376-1 1348-2246 nnns volume:9 year:1993 number:5 month:10 pages:735-736 https://dx.doi.org/10.2116/analsci.9.735 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 1993 5 10 735-736
allfieldsSound	10.2116/analsci.9.735 doi (DE-627)SPR047561025 (SPR)analsci.9.735-e DE-627 ger DE-627 rakwb eng Kozuka, Shoji verfasserin aut Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Japan Society for Analytical Chemistry 1993 Silicon carbide (dpeaa)DE-He213 single crystal (dpeaa)DE-He213 acid pressure decomposition (dpeaa)DE-He213 inductively coupled plasma mass spectrometry (dpeaa)DE-He213 Hayashi, Masaru aut Matsunaga, Hideki aut Enthalten in Analytical sciences [Cham] : Springer International Publishing, 1985 9(1993), 5 vom: Okt., Seite 735-736 (DE-627)300895925 (DE-600)1483376-1 1348-2246 nnns volume:9 year:1993 number:5 month:10 pages:735-736 https://dx.doi.org/10.2116/analsci.9.735 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 1993 5 10 735-736
language	English
source	Enthalten in Analytical sciences 9(1993), 5 vom: Okt., Seite 735-736 volume:9 year:1993 number:5 month:10 pages:735-736
sourceStr	Enthalten in Analytical sciences 9(1993), 5 vom: Okt., Seite 735-736 volume:9 year:1993 number:5 month:10 pages:735-736
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Silicon carbide single crystal acid pressure decomposition inductively coupled plasma mass spectrometry
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container_title	Analytical sciences
authorswithroles_txt_mv	Kozuka, Shoji @@aut@@ Hayashi, Masaru @@aut@@ Matsunaga, Hideki @@aut@@
publishDateDaySort_date	1993-10-01T00:00:00Z
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author	Kozuka, Shoji
spellingShingle	Kozuka, Shoji misc Silicon carbide misc single crystal misc acid pressure decomposition misc inductively coupled plasma mass spectrometry Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry
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topic_title	Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry Silicon carbide (dpeaa)DE-He213 single crystal (dpeaa)DE-He213 acid pressure decomposition (dpeaa)DE-He213 inductively coupled plasma mass spectrometry (dpeaa)DE-He213
topic	misc Silicon carbide misc single crystal misc acid pressure decomposition misc inductively coupled plasma mass spectrometry
topic_unstemmed	misc Silicon carbide misc single crystal misc acid pressure decomposition misc inductively coupled plasma mass spectrometry
topic_browse	misc Silicon carbide misc single crystal misc acid pressure decomposition misc inductively coupled plasma mass spectrometry
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title	Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry
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title_full	Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry
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doi_str_mv	10.2116/analsci.9.735
title_sort	determination of impurities in single-crystal silicon carbide by inductively coupled plasma mass spectrometry
title_auth	Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry
abstract	© The Japan Society for Analytical Chemistry 1993
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title_short	Determination of Impurities in Single-Crystal Silicon Carbide by Inductively Coupled Plasma Mass Spectrometry
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up_date	2024-07-03T13:32:33.094Z
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