Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples
Abstract The addition of a small amount of Hj into Ar considerably decreased the signal intensity for a sintered zirconium oxide ($ ZrO_{2} $ sample when the discharge was operated at an rf power less than 100 W, while it increased the ion intensity of the analyte for a brass sample. Although the sp...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Tanaka, Tomokazu [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1996 |
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| Schlagwörter: |
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| Anmerkung: |
© The Japan Society for Analytical Chemistry 1996 |
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| Übergeordnetes Werk: |
Enthalten in: Analytical sciences - [Cham] : Springer International Publishing, 1985, 12(1996), 4 vom: Aug., Seite 591-595 |
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| Übergeordnetes Werk: |
volume:12 ; year:1996 ; number:4 ; month:08 ; pages:591-595 |
| Links: |
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| DOI / URN: |
10.2116/analsci.12.591 |
|---|
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SPR047589655 |
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| 100 | 1 | |a Tanaka, Tomokazu |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples |
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| 520 | |a Abstract The addition of a small amount of Hj into Ar considerably decreased the signal intensity for a sintered zirconium oxide ($ ZrO_{2} $ sample when the discharge was operated at an rf power less than 100 W, while it increased the ion intensity of the analyte for a brass sample. Although the sputtering rate of the $ ZrO_{2} $ sample varied with the concentration of added Hj, no apparent correlation between the sputtering rate and the ion intensity was observed. When the discharge was operated at 200 W, the addition of $ H_{2} $ significantly increased the ion intensity for the $ ZrO_{2} $ sample. For a sintered silicon carbide (SiC) sample, a similar behavior of the ion signals was observed, though they changed from suppression to enhancement at an rf power lower than that for a $ ZrO_{2} $ sample. This was probably due to the higher electric conductivity of SiC compared to that of $ ZrO_{2} $. When He was added into Ar, the analyte-ion intensity varied similarly to the case of $ H_{3} $. An increase in the ion intensity was also observed when $ N_{3} $ or $ O_{2} $ was added at a concentration range of 10-20wt% in Ar, although the behavior was observed for a discharge operated at a relatively high rf power of 200 W. | ||
| 650 | 4 | |a Glow-discharge mass spectrometry |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a radio frequency |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a nonconducting sample |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a mixed gas |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a sputtering rate |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Matsuno, Motoya |4 aut | |
| 700 | 1 | |a Woo, Jin-Chun |4 aut | |
| 700 | 1 | |a Kawaguchi, Hiroshi |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Analytical sciences |d [Cham] : Springer International Publishing, 1985 |g 12(1996), 4 vom: Aug., Seite 591-595 |w (DE-627)300895925 |w (DE-600)1483376-1 |x 1348-2246 |7 nnns |
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10.2116/analsci.12.591 doi (DE-627)SPR047589655 (SPR)analsci.12.591-e DE-627 ger DE-627 rakwb eng Tanaka, Tomokazu verfasserin aut Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Japan Society for Analytical Chemistry 1996 Abstract The addition of a small amount of Hj into Ar considerably decreased the signal intensity for a sintered zirconium oxide ($ ZrO_{2} $ sample when the discharge was operated at an rf power less than 100 W, while it increased the ion intensity of the analyte for a brass sample. Although the sputtering rate of the $ ZrO_{2} $ sample varied with the concentration of added Hj, no apparent correlation between the sputtering rate and the ion intensity was observed. When the discharge was operated at 200 W, the addition of $ H_{2} $ significantly increased the ion intensity for the $ ZrO_{2} $ sample. For a sintered silicon carbide (SiC) sample, a similar behavior of the ion signals was observed, though they changed from suppression to enhancement at an rf power lower than that for a $ ZrO_{2} $ sample. This was probably due to the higher electric conductivity of SiC compared to that of $ ZrO_{2} $. When He was added into Ar, the analyte-ion intensity varied similarly to the case of $ H_{3} $. An increase in the ion intensity was also observed when $ N_{3} $ or $ O_{2} $ was added at a concentration range of 10-20wt% in Ar, although the behavior was observed for a discharge operated at a relatively high rf power of 200 W. Glow-discharge mass spectrometry (dpeaa)DE-He213 radio frequency (dpeaa)DE-He213 nonconducting sample (dpeaa)DE-He213 mixed gas (dpeaa)DE-He213 sputtering rate (dpeaa)DE-He213 Matsuno, Motoya aut Woo, Jin-Chun aut Kawaguchi, Hiroshi aut Enthalten in Analytical sciences [Cham] : Springer International Publishing, 1985 12(1996), 4 vom: Aug., Seite 591-595 (DE-627)300895925 (DE-600)1483376-1 1348-2246 nnns volume:12 year:1996 number:4 month:08 pages:591-595 https://dx.doi.org/10.2116/analsci.12.591 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 1996 4 08 591-595 |
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10.2116/analsci.12.591 doi (DE-627)SPR047589655 (SPR)analsci.12.591-e DE-627 ger DE-627 rakwb eng Tanaka, Tomokazu verfasserin aut Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Japan Society for Analytical Chemistry 1996 Abstract The addition of a small amount of Hj into Ar considerably decreased the signal intensity for a sintered zirconium oxide ($ ZrO_{2} $ sample when the discharge was operated at an rf power less than 100 W, while it increased the ion intensity of the analyte for a brass sample. Although the sputtering rate of the $ ZrO_{2} $ sample varied with the concentration of added Hj, no apparent correlation between the sputtering rate and the ion intensity was observed. When the discharge was operated at 200 W, the addition of $ H_{2} $ significantly increased the ion intensity for the $ ZrO_{2} $ sample. For a sintered silicon carbide (SiC) sample, a similar behavior of the ion signals was observed, though they changed from suppression to enhancement at an rf power lower than that for a $ ZrO_{2} $ sample. This was probably due to the higher electric conductivity of SiC compared to that of $ ZrO_{2} $. When He was added into Ar, the analyte-ion intensity varied similarly to the case of $ H_{3} $. An increase in the ion intensity was also observed when $ N_{3} $ or $ O_{2} $ was added at a concentration range of 10-20wt% in Ar, although the behavior was observed for a discharge operated at a relatively high rf power of 200 W. Glow-discharge mass spectrometry (dpeaa)DE-He213 radio frequency (dpeaa)DE-He213 nonconducting sample (dpeaa)DE-He213 mixed gas (dpeaa)DE-He213 sputtering rate (dpeaa)DE-He213 Matsuno, Motoya aut Woo, Jin-Chun aut Kawaguchi, Hiroshi aut Enthalten in Analytical sciences [Cham] : Springer International Publishing, 1985 12(1996), 4 vom: Aug., Seite 591-595 (DE-627)300895925 (DE-600)1483376-1 1348-2246 nnns volume:12 year:1996 number:4 month:08 pages:591-595 https://dx.doi.org/10.2116/analsci.12.591 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 1996 4 08 591-595 |
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10.2116/analsci.12.591 doi (DE-627)SPR047589655 (SPR)analsci.12.591-e DE-627 ger DE-627 rakwb eng Tanaka, Tomokazu verfasserin aut Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Japan Society for Analytical Chemistry 1996 Abstract The addition of a small amount of Hj into Ar considerably decreased the signal intensity for a sintered zirconium oxide ($ ZrO_{2} $ sample when the discharge was operated at an rf power less than 100 W, while it increased the ion intensity of the analyte for a brass sample. Although the sputtering rate of the $ ZrO_{2} $ sample varied with the concentration of added Hj, no apparent correlation between the sputtering rate and the ion intensity was observed. When the discharge was operated at 200 W, the addition of $ H_{2} $ significantly increased the ion intensity for the $ ZrO_{2} $ sample. For a sintered silicon carbide (SiC) sample, a similar behavior of the ion signals was observed, though they changed from suppression to enhancement at an rf power lower than that for a $ ZrO_{2} $ sample. This was probably due to the higher electric conductivity of SiC compared to that of $ ZrO_{2} $. When He was added into Ar, the analyte-ion intensity varied similarly to the case of $ H_{3} $. An increase in the ion intensity was also observed when $ N_{3} $ or $ O_{2} $ was added at a concentration range of 10-20wt% in Ar, although the behavior was observed for a discharge operated at a relatively high rf power of 200 W. Glow-discharge mass spectrometry (dpeaa)DE-He213 radio frequency (dpeaa)DE-He213 nonconducting sample (dpeaa)DE-He213 mixed gas (dpeaa)DE-He213 sputtering rate (dpeaa)DE-He213 Matsuno, Motoya aut Woo, Jin-Chun aut Kawaguchi, Hiroshi aut Enthalten in Analytical sciences [Cham] : Springer International Publishing, 1985 12(1996), 4 vom: Aug., Seite 591-595 (DE-627)300895925 (DE-600)1483376-1 1348-2246 nnns volume:12 year:1996 number:4 month:08 pages:591-595 https://dx.doi.org/10.2116/analsci.12.591 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 1996 4 08 591-595 |
| allfieldsGer |
10.2116/analsci.12.591 doi (DE-627)SPR047589655 (SPR)analsci.12.591-e DE-627 ger DE-627 rakwb eng Tanaka, Tomokazu verfasserin aut Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Japan Society for Analytical Chemistry 1996 Abstract The addition of a small amount of Hj into Ar considerably decreased the signal intensity for a sintered zirconium oxide ($ ZrO_{2} $ sample when the discharge was operated at an rf power less than 100 W, while it increased the ion intensity of the analyte for a brass sample. Although the sputtering rate of the $ ZrO_{2} $ sample varied with the concentration of added Hj, no apparent correlation between the sputtering rate and the ion intensity was observed. When the discharge was operated at 200 W, the addition of $ H_{2} $ significantly increased the ion intensity for the $ ZrO_{2} $ sample. For a sintered silicon carbide (SiC) sample, a similar behavior of the ion signals was observed, though they changed from suppression to enhancement at an rf power lower than that for a $ ZrO_{2} $ sample. This was probably due to the higher electric conductivity of SiC compared to that of $ ZrO_{2} $. When He was added into Ar, the analyte-ion intensity varied similarly to the case of $ H_{3} $. An increase in the ion intensity was also observed when $ N_{3} $ or $ O_{2} $ was added at a concentration range of 10-20wt% in Ar, although the behavior was observed for a discharge operated at a relatively high rf power of 200 W. Glow-discharge mass spectrometry (dpeaa)DE-He213 radio frequency (dpeaa)DE-He213 nonconducting sample (dpeaa)DE-He213 mixed gas (dpeaa)DE-He213 sputtering rate (dpeaa)DE-He213 Matsuno, Motoya aut Woo, Jin-Chun aut Kawaguchi, Hiroshi aut Enthalten in Analytical sciences [Cham] : Springer International Publishing, 1985 12(1996), 4 vom: Aug., Seite 591-595 (DE-627)300895925 (DE-600)1483376-1 1348-2246 nnns volume:12 year:1996 number:4 month:08 pages:591-595 https://dx.doi.org/10.2116/analsci.12.591 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 1996 4 08 591-595 |
| allfieldsSound |
10.2116/analsci.12.591 doi (DE-627)SPR047589655 (SPR)analsci.12.591-e DE-627 ger DE-627 rakwb eng Tanaka, Tomokazu verfasserin aut Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Japan Society for Analytical Chemistry 1996 Abstract The addition of a small amount of Hj into Ar considerably decreased the signal intensity for a sintered zirconium oxide ($ ZrO_{2} $ sample when the discharge was operated at an rf power less than 100 W, while it increased the ion intensity of the analyte for a brass sample. Although the sputtering rate of the $ ZrO_{2} $ sample varied with the concentration of added Hj, no apparent correlation between the sputtering rate and the ion intensity was observed. When the discharge was operated at 200 W, the addition of $ H_{2} $ significantly increased the ion intensity for the $ ZrO_{2} $ sample. For a sintered silicon carbide (SiC) sample, a similar behavior of the ion signals was observed, though they changed from suppression to enhancement at an rf power lower than that for a $ ZrO_{2} $ sample. This was probably due to the higher electric conductivity of SiC compared to that of $ ZrO_{2} $. When He was added into Ar, the analyte-ion intensity varied similarly to the case of $ H_{3} $. An increase in the ion intensity was also observed when $ N_{3} $ or $ O_{2} $ was added at a concentration range of 10-20wt% in Ar, although the behavior was observed for a discharge operated at a relatively high rf power of 200 W. Glow-discharge mass spectrometry (dpeaa)DE-He213 radio frequency (dpeaa)DE-He213 nonconducting sample (dpeaa)DE-He213 mixed gas (dpeaa)DE-He213 sputtering rate (dpeaa)DE-He213 Matsuno, Motoya aut Woo, Jin-Chun aut Kawaguchi, Hiroshi aut Enthalten in Analytical sciences [Cham] : Springer International Publishing, 1985 12(1996), 4 vom: Aug., Seite 591-595 (DE-627)300895925 (DE-600)1483376-1 1348-2246 nnns volume:12 year:1996 number:4 month:08 pages:591-595 https://dx.doi.org/10.2116/analsci.12.591 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 1996 4 08 591-595 |
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Tanaka, Tomokazu @@aut@@ Matsuno, Motoya @@aut@@ Woo, Jin-Chun @@aut@@ Kawaguchi, Hiroshi @@aut@@ |
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Tanaka, Tomokazu |
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Tanaka, Tomokazu misc Glow-discharge mass spectrometry misc radio frequency misc nonconducting sample misc mixed gas misc sputtering rate Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples |
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Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples Glow-discharge mass spectrometry (dpeaa)DE-He213 radio frequency (dpeaa)DE-He213 nonconducting sample (dpeaa)DE-He213 mixed gas (dpeaa)DE-He213 sputtering rate (dpeaa)DE-He213 |
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Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples |
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Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples |
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effect of hydrogen addition to the discharge gas in radio-frequency argon glow-discharge mass spectrometry for nonconducting samples |
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Effect of Hydrogen Addition to the Discharge Gas in Radio-Frequency Argon Glow-Discharge Mass Spectrometry for Nonconducting Samples |
| abstract |
Abstract The addition of a small amount of Hj into Ar considerably decreased the signal intensity for a sintered zirconium oxide ($ ZrO_{2} $ sample when the discharge was operated at an rf power less than 100 W, while it increased the ion intensity of the analyte for a brass sample. Although the sputtering rate of the $ ZrO_{2} $ sample varied with the concentration of added Hj, no apparent correlation between the sputtering rate and the ion intensity was observed. When the discharge was operated at 200 W, the addition of $ H_{2} $ significantly increased the ion intensity for the $ ZrO_{2} $ sample. For a sintered silicon carbide (SiC) sample, a similar behavior of the ion signals was observed, though they changed from suppression to enhancement at an rf power lower than that for a $ ZrO_{2} $ sample. This was probably due to the higher electric conductivity of SiC compared to that of $ ZrO_{2} $. When He was added into Ar, the analyte-ion intensity varied similarly to the case of $ H_{3} $. An increase in the ion intensity was also observed when $ N_{3} $ or $ O_{2} $ was added at a concentration range of 10-20wt% in Ar, although the behavior was observed for a discharge operated at a relatively high rf power of 200 W. © The Japan Society for Analytical Chemistry 1996 |
| abstractGer |
Abstract The addition of a small amount of Hj into Ar considerably decreased the signal intensity for a sintered zirconium oxide ($ ZrO_{2} $ sample when the discharge was operated at an rf power less than 100 W, while it increased the ion intensity of the analyte for a brass sample. Although the sputtering rate of the $ ZrO_{2} $ sample varied with the concentration of added Hj, no apparent correlation between the sputtering rate and the ion intensity was observed. When the discharge was operated at 200 W, the addition of $ H_{2} $ significantly increased the ion intensity for the $ ZrO_{2} $ sample. For a sintered silicon carbide (SiC) sample, a similar behavior of the ion signals was observed, though they changed from suppression to enhancement at an rf power lower than that for a $ ZrO_{2} $ sample. This was probably due to the higher electric conductivity of SiC compared to that of $ ZrO_{2} $. When He was added into Ar, the analyte-ion intensity varied similarly to the case of $ H_{3} $. An increase in the ion intensity was also observed when $ N_{3} $ or $ O_{2} $ was added at a concentration range of 10-20wt% in Ar, although the behavior was observed for a discharge operated at a relatively high rf power of 200 W. © The Japan Society for Analytical Chemistry 1996 |
| abstract_unstemmed |
Abstract The addition of a small amount of Hj into Ar considerably decreased the signal intensity for a sintered zirconium oxide ($ ZrO_{2} $ sample when the discharge was operated at an rf power less than 100 W, while it increased the ion intensity of the analyte for a brass sample. Although the sputtering rate of the $ ZrO_{2} $ sample varied with the concentration of added Hj, no apparent correlation between the sputtering rate and the ion intensity was observed. When the discharge was operated at 200 W, the addition of $ H_{2} $ significantly increased the ion intensity for the $ ZrO_{2} $ sample. For a sintered silicon carbide (SiC) sample, a similar behavior of the ion signals was observed, though they changed from suppression to enhancement at an rf power lower than that for a $ ZrO_{2} $ sample. This was probably due to the higher electric conductivity of SiC compared to that of $ ZrO_{2} $. When He was added into Ar, the analyte-ion intensity varied similarly to the case of $ H_{3} $. An increase in the ion intensity was also observed when $ N_{3} $ or $ O_{2} $ was added at a concentration range of 10-20wt% in Ar, although the behavior was observed for a discharge operated at a relatively high rf power of 200 W. © The Japan Society for Analytical Chemistry 1996 |
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