Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications
Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $A...
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| Autor*in: |
Vadizadeh, Mahdi [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Anmerkung: |
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
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| Übergeordnetes Werk: |
Enthalten in: Journal of computational electronics - Dordrecht : Springer Science + Business Media B.V., 2002, 21(2022), 5 vom: 01. Aug., Seite 1127-1137 |
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| Übergeordnetes Werk: |
volume:21 ; year:2022 ; number:5 ; day:01 ; month:08 ; pages:1127-1137 |
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| DOI / URN: |
10.1007/s10825-022-01919-4 |
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| Katalog-ID: |
SPR048099643 |
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| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR048099643 | ||
| 003 | DE-627 | ||
| 005 | 20230509111525.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 220915s2022 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s10825-022-01919-4 |2 doi | |
| 035 | |a (DE-627)SPR048099643 | ||
| 035 | |a (SPR)s10825-022-01919-4-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Vadizadeh, Mahdi |e verfasserin |0 (orcid)0000-0001-7557-0620 |4 aut | |
| 245 | 1 | 0 | |a Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications |
| 264 | 1 | |c 2022 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. | ||
| 520 | |a Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications. | ||
| 650 | 4 | |a Low-noise amplifier (LNA) |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a X-Band radar applications |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Forward voltage gain |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Noise figure |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Fallahnejad, Mohammad |4 aut | |
| 700 | 1 | |a Ejlali, Reyhaneh |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of computational electronics |d Dordrecht : Springer Science + Business Media B.V., 2002 |g 21(2022), 5 vom: 01. Aug., Seite 1127-1137 |w (DE-627)340872063 |w (DE-600)2065612-9 |x 1572-8137 |7 nnns |
| 773 | 1 | 8 | |g volume:21 |g year:2022 |g number:5 |g day:01 |g month:08 |g pages:1127-1137 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s10825-022-01919-4 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_11 | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_22 | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_24 | ||
| 912 | |a GBV_ILN_31 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_39 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_60 | ||
| 912 | |a GBV_ILN_62 | ||
| 912 | |a GBV_ILN_63 | ||
| 912 | |a GBV_ILN_65 | ||
| 912 | |a GBV_ILN_69 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_73 | ||
| 912 | |a GBV_ILN_74 | ||
| 912 | |a GBV_ILN_90 | ||
| 912 | |a GBV_ILN_95 | ||
| 912 | |a GBV_ILN_100 | ||
| 912 | |a GBV_ILN_101 | ||
| 912 | |a GBV_ILN_105 | ||
| 912 | |a GBV_ILN_110 | ||
| 912 | |a GBV_ILN_120 | ||
| 912 | |a GBV_ILN_138 | ||
| 912 | |a GBV_ILN_150 | ||
| 912 | |a GBV_ILN_151 | ||
| 912 | |a GBV_ILN_152 | ||
| 912 | |a GBV_ILN_161 | ||
| 912 | |a GBV_ILN_170 | ||
| 912 | |a GBV_ILN_171 | ||
| 912 | |a GBV_ILN_187 | ||
| 912 | |a GBV_ILN_213 | ||
| 912 | |a GBV_ILN_224 | ||
| 912 | |a GBV_ILN_230 | ||
| 912 | |a GBV_ILN_250 | ||
| 912 | |a GBV_ILN_281 | ||
| 912 | |a GBV_ILN_285 | ||
| 912 | |a GBV_ILN_293 | ||
| 912 | |a GBV_ILN_370 | ||
| 912 | |a GBV_ILN_602 | ||
| 912 | |a GBV_ILN_636 | ||
| 912 | |a GBV_ILN_702 | ||
| 912 | |a GBV_ILN_2001 | ||
| 912 | |a GBV_ILN_2003 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2006 | ||
| 912 | |a GBV_ILN_2007 | ||
| 912 | |a GBV_ILN_2008 | ||
| 912 | |a GBV_ILN_2009 | ||
| 912 | |a GBV_ILN_2010 | ||
| 912 | |a GBV_ILN_2011 | ||
| 912 | |a GBV_ILN_2014 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_2021 | ||
| 912 | |a GBV_ILN_2025 | ||
| 912 | |a GBV_ILN_2026 | ||
| 912 | |a GBV_ILN_2027 | ||
| 912 | |a GBV_ILN_2031 | ||
| 912 | |a GBV_ILN_2034 | ||
| 912 | |a GBV_ILN_2037 | ||
| 912 | |a GBV_ILN_2038 | ||
| 912 | |a GBV_ILN_2039 | ||
| 912 | |a GBV_ILN_2044 | ||
| 912 | |a GBV_ILN_2048 | ||
| 912 | |a GBV_ILN_2049 | ||
| 912 | |a GBV_ILN_2050 | ||
| 912 | |a GBV_ILN_2055 | ||
| 912 | |a GBV_ILN_2056 | ||
| 912 | |a GBV_ILN_2057 | ||
| 912 | |a GBV_ILN_2059 | ||
| 912 | |a GBV_ILN_2061 | ||
| 912 | |a GBV_ILN_2064 | ||
| 912 | |a GBV_ILN_2065 | ||
| 912 | |a GBV_ILN_2068 | ||
| 912 | |a GBV_ILN_2088 | ||
| 912 | |a GBV_ILN_2093 | ||
| 912 | |a GBV_ILN_2106 | ||
| 912 | |a GBV_ILN_2107 | ||
| 912 | |a GBV_ILN_2108 | ||
| 912 | |a GBV_ILN_2110 | ||
| 912 | |a GBV_ILN_2111 | ||
| 912 | |a GBV_ILN_2112 | ||
| 912 | |a GBV_ILN_2113 | ||
| 912 | |a GBV_ILN_2118 | ||
| 912 | |a GBV_ILN_2122 | ||
| 912 | |a GBV_ILN_2129 | ||
| 912 | |a GBV_ILN_2143 | ||
| 912 | |a GBV_ILN_2144 | ||
| 912 | |a GBV_ILN_2147 | ||
| 912 | |a GBV_ILN_2148 | ||
| 912 | |a GBV_ILN_2152 | ||
| 912 | |a GBV_ILN_2153 | ||
| 912 | |a GBV_ILN_2188 | ||
| 912 | |a GBV_ILN_2190 | ||
| 912 | |a GBV_ILN_2232 | ||
| 912 | |a GBV_ILN_2336 | ||
| 912 | |a GBV_ILN_2446 | ||
| 912 | |a GBV_ILN_2470 | ||
| 912 | |a GBV_ILN_2472 | ||
| 912 | |a GBV_ILN_2507 | ||
| 912 | |a GBV_ILN_2522 | ||
| 912 | |a GBV_ILN_2548 | ||
| 912 | |a GBV_ILN_4035 | ||
| 912 | |a GBV_ILN_4037 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4112 | ||
| 912 | |a GBV_ILN_4125 | ||
| 912 | |a GBV_ILN_4126 | ||
| 912 | |a GBV_ILN_4242 | ||
| 912 | |a GBV_ILN_4246 | ||
| 912 | |a GBV_ILN_4249 | ||
| 912 | |a GBV_ILN_4251 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4306 | ||
| 912 | |a GBV_ILN_4307 | ||
| 912 | |a GBV_ILN_4313 | ||
| 912 | |a GBV_ILN_4322 | ||
| 912 | |a GBV_ILN_4323 | ||
| 912 | |a GBV_ILN_4324 | ||
| 912 | |a GBV_ILN_4325 | ||
| 912 | |a GBV_ILN_4326 | ||
| 912 | |a GBV_ILN_4328 | ||
| 912 | |a GBV_ILN_4333 | ||
| 912 | |a GBV_ILN_4334 | ||
| 912 | |a GBV_ILN_4335 | ||
| 912 | |a GBV_ILN_4336 | ||
| 912 | |a GBV_ILN_4338 | ||
| 912 | |a GBV_ILN_4393 | ||
| 912 | |a GBV_ILN_4700 | ||
| 951 | |a AR | ||
| 952 | |d 21 |j 2022 |e 5 |b 01 |c 08 |h 1127-1137 | ||
| author_variant |
m v mv m f mf r e re |
|---|---|
| matchkey_str |
article:15728137:2022----::ucinesn0g_7sasrnitrihseloigrflfrhdsgoaoniemlfewta |
| hierarchy_sort_str |
2022 |
| publishDate |
2022 |
| allfields |
10.1007/s10825-022-01919-4 doi (DE-627)SPR048099643 (SPR)s10825-022-01919-4-e DE-627 ger DE-627 rakwb eng Vadizadeh, Mahdi verfasserin (orcid)0000-0001-7557-0620 aut Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications. Low-noise amplifier (LNA) (dpeaa)DE-He213 X-Band radar applications (dpeaa)DE-He213 Forward voltage gain (dpeaa)DE-He213 Noise figure (dpeaa)DE-He213 Fallahnejad, Mohammad aut Ejlali, Reyhaneh aut Enthalten in Journal of computational electronics Dordrecht : Springer Science + Business Media B.V., 2002 21(2022), 5 vom: 01. Aug., Seite 1127-1137 (DE-627)340872063 (DE-600)2065612-9 1572-8137 nnns volume:21 year:2022 number:5 day:01 month:08 pages:1127-1137 https://dx.doi.org/10.1007/s10825-022-01919-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 21 2022 5 01 08 1127-1137 |
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10.1007/s10825-022-01919-4 doi (DE-627)SPR048099643 (SPR)s10825-022-01919-4-e DE-627 ger DE-627 rakwb eng Vadizadeh, Mahdi verfasserin (orcid)0000-0001-7557-0620 aut Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications. Low-noise amplifier (LNA) (dpeaa)DE-He213 X-Band radar applications (dpeaa)DE-He213 Forward voltage gain (dpeaa)DE-He213 Noise figure (dpeaa)DE-He213 Fallahnejad, Mohammad aut Ejlali, Reyhaneh aut Enthalten in Journal of computational electronics Dordrecht : Springer Science + Business Media B.V., 2002 21(2022), 5 vom: 01. Aug., Seite 1127-1137 (DE-627)340872063 (DE-600)2065612-9 1572-8137 nnns volume:21 year:2022 number:5 day:01 month:08 pages:1127-1137 https://dx.doi.org/10.1007/s10825-022-01919-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 21 2022 5 01 08 1127-1137 |
| allfields_unstemmed |
10.1007/s10825-022-01919-4 doi (DE-627)SPR048099643 (SPR)s10825-022-01919-4-e DE-627 ger DE-627 rakwb eng Vadizadeh, Mahdi verfasserin (orcid)0000-0001-7557-0620 aut Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications. Low-noise amplifier (LNA) (dpeaa)DE-He213 X-Band radar applications (dpeaa)DE-He213 Forward voltage gain (dpeaa)DE-He213 Noise figure (dpeaa)DE-He213 Fallahnejad, Mohammad aut Ejlali, Reyhaneh aut Enthalten in Journal of computational electronics Dordrecht : Springer Science + Business Media B.V., 2002 21(2022), 5 vom: 01. Aug., Seite 1127-1137 (DE-627)340872063 (DE-600)2065612-9 1572-8137 nnns volume:21 year:2022 number:5 day:01 month:08 pages:1127-1137 https://dx.doi.org/10.1007/s10825-022-01919-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 21 2022 5 01 08 1127-1137 |
| allfieldsGer |
10.1007/s10825-022-01919-4 doi (DE-627)SPR048099643 (SPR)s10825-022-01919-4-e DE-627 ger DE-627 rakwb eng Vadizadeh, Mahdi verfasserin (orcid)0000-0001-7557-0620 aut Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications. Low-noise amplifier (LNA) (dpeaa)DE-He213 X-Band radar applications (dpeaa)DE-He213 Forward voltage gain (dpeaa)DE-He213 Noise figure (dpeaa)DE-He213 Fallahnejad, Mohammad aut Ejlali, Reyhaneh aut Enthalten in Journal of computational electronics Dordrecht : Springer Science + Business Media B.V., 2002 21(2022), 5 vom: 01. Aug., Seite 1127-1137 (DE-627)340872063 (DE-600)2065612-9 1572-8137 nnns volume:21 year:2022 number:5 day:01 month:08 pages:1127-1137 https://dx.doi.org/10.1007/s10825-022-01919-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 21 2022 5 01 08 1127-1137 |
| allfieldsSound |
10.1007/s10825-022-01919-4 doi (DE-627)SPR048099643 (SPR)s10825-022-01919-4-e DE-627 ger DE-627 rakwb eng Vadizadeh, Mahdi verfasserin (orcid)0000-0001-7557-0620 aut Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications. Low-noise amplifier (LNA) (dpeaa)DE-He213 X-Band radar applications (dpeaa)DE-He213 Forward voltage gain (dpeaa)DE-He213 Noise figure (dpeaa)DE-He213 Fallahnejad, Mohammad aut Ejlali, Reyhaneh aut Enthalten in Journal of computational electronics Dordrecht : Springer Science + Business Media B.V., 2002 21(2022), 5 vom: 01. Aug., Seite 1127-1137 (DE-627)340872063 (DE-600)2065612-9 1572-8137 nnns volume:21 year:2022 number:5 day:01 month:08 pages:1127-1137 https://dx.doi.org/10.1007/s10825-022-01919-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 21 2022 5 01 08 1127-1137 |
| language |
English |
| source |
Enthalten in Journal of computational electronics 21(2022), 5 vom: 01. Aug., Seite 1127-1137 volume:21 year:2022 number:5 day:01 month:08 pages:1127-1137 |
| sourceStr |
Enthalten in Journal of computational electronics 21(2022), 5 vom: 01. Aug., Seite 1127-1137 volume:21 year:2022 number:5 day:01 month:08 pages:1127-1137 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Low-noise amplifier (LNA) X-Band radar applications Forward voltage gain Noise figure |
| isfreeaccess_bool |
false |
| container_title |
Journal of computational electronics |
| authorswithroles_txt_mv |
Vadizadeh, Mahdi @@aut@@ Fallahnejad, Mohammad @@aut@@ Ejlali, Reyhaneh @@aut@@ |
| publishDateDaySort_date |
2022-08-01T00:00:00Z |
| hierarchy_top_id |
340872063 |
| id |
SPR048099643 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR048099643</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230509111525.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">220915s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10825-022-01919-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR048099643</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10825-022-01919-4-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Vadizadeh, Mahdi</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0001-7557-0620</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Low-noise amplifier (LNA)</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">X-Band radar applications</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Forward voltage gain</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise figure</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fallahnejad, Mohammad</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ejlali, Reyhaneh</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of computational electronics</subfield><subfield code="d">Dordrecht : Springer Science + Business Media B.V., 2002</subfield><subfield code="g">21(2022), 5 vom: 01. Aug., Seite 1127-1137</subfield><subfield code="w">(DE-627)340872063</subfield><subfield code="w">(DE-600)2065612-9</subfield><subfield code="x">1572-8137</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:21</subfield><subfield code="g">year:2022</subfield><subfield code="g">number:5</subfield><subfield code="g">day:01</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:1127-1137</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s10825-022-01919-4</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_636</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2031</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2039</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2057</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2093</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2107</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2144</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2188</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2446</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2472</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2548</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4246</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4328</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">21</subfield><subfield code="j">2022</subfield><subfield code="e">5</subfield><subfield code="b">01</subfield><subfield code="c">08</subfield><subfield code="h">1127-1137</subfield></datafield></record></collection>
|
| author |
Vadizadeh, Mahdi |
| spellingShingle |
Vadizadeh, Mahdi misc Low-noise amplifier (LNA) misc X-Band radar applications misc Forward voltage gain misc Noise figure Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications |
| authorStr |
Vadizadeh, Mahdi |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)340872063 |
| format |
electronic Article |
| delete_txt_mv |
keep |
| author_role |
aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1572-8137 |
| topic_title |
Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications Low-noise amplifier (LNA) (dpeaa)DE-He213 X-Band radar applications (dpeaa)DE-He213 Forward voltage gain (dpeaa)DE-He213 Noise figure (dpeaa)DE-He213 |
| topic |
misc Low-noise amplifier (LNA) misc X-Band radar applications misc Forward voltage gain misc Noise figure |
| topic_unstemmed |
misc Low-noise amplifier (LNA) misc X-Band radar applications misc Forward voltage gain misc Noise figure |
| topic_browse |
misc Low-noise amplifier (LNA) misc X-Band radar applications misc Forward voltage gain misc Noise figure |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
Journal of computational electronics |
| hierarchy_parent_id |
340872063 |
| hierarchy_top_title |
Journal of computational electronics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)340872063 (DE-600)2065612-9 |
| title |
Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications |
| ctrlnum |
(DE-627)SPR048099643 (SPR)s10825-022-01919-4-e |
| title_full |
Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications |
| author_sort |
Vadizadeh, Mahdi |
| journal |
Journal of computational electronics |
| journalStr |
Journal of computational electronics |
| lang_code |
eng |
| isOA_bool |
false |
| recordtype |
marc |
| publishDateSort |
2022 |
| contenttype_str_mv |
txt |
| container_start_page |
1127 |
| author_browse |
Vadizadeh, Mahdi Fallahnejad, Mohammad Ejlali, Reyhaneh |
| container_volume |
21 |
| format_se |
Elektronische Aufsätze |
| author-letter |
Vadizadeh, Mahdi |
| doi_str_mv |
10.1007/s10825-022-01919-4 |
| normlink |
(ORCID)0000-0001-7557-0620 |
| normlink_prefix_str_mv |
(orcid)0000-0001-7557-0620 |
| title_sort |
junctionless $ in_{0.3} %$ ga_{0.7} $as/gaas transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-db noise figure for x-band applications |
| title_auth |
Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications |
| abstract |
Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| abstractGer |
Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| abstract_unstemmed |
Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 |
| container_issue |
5 |
| title_short |
Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications |
| url |
https://dx.doi.org/10.1007/s10825-022-01919-4 |
| remote_bool |
true |
| author2 |
Fallahnejad, Mohammad Ejlali, Reyhaneh |
| author2Str |
Fallahnejad, Mohammad Ejlali, Reyhaneh |
| ppnlink |
340872063 |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s10825-022-01919-4 |
| up_date |
2024-07-03T17:00:23.337Z |
| _version_ |
1803578007447666688 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR048099643</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230509111525.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">220915s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10825-022-01919-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR048099643</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10825-022-01919-4-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Vadizadeh, Mahdi</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0001-7557-0620</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Junctionless $ In_{0.3} %$ Ga_{0.7} $As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In this paper, a junctionless (JL) $ In_{0.3} %$ Ga_{0.7} $As/GaAs FET with a shell-doped channel (SDCh) for high-frequency electronics is investigated, and different electrical properties of the device are characterized through TCAD device simulations. The SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is able to achieve higher transconductance (gm1) and a lower minimum noise figure (NFmin) than a conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs. Moreover, the effect of the SDCh on the linear performance in terms of the third-order input power intermodulation intercept point (IIP3) and 1-dB compression point parameters is evaluated. For the first time, we have designed a low-noise amplifier (LNA) using a SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET and conventional JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs for X-band radar applications. An s2p model is developed for both devices and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. The key performance metrics including NF and forward voltage gain (S21) are analyzed for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. The NF and S21 parameters at f = 10 GHz show a significant improvement of 58% and 44%, respectively, for the LNA with the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET relative to the LNA with the JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET. Thus the SDCh-JL-$ In_{0.3} %$ Ga_{0.7} $As/GaAs FET is considered a good candidate for high-frequency applications.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Low-noise amplifier (LNA)</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">X-Band radar applications</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Forward voltage gain</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise figure</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fallahnejad, Mohammad</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ejlali, Reyhaneh</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of computational electronics</subfield><subfield code="d">Dordrecht : Springer Science + Business Media B.V., 2002</subfield><subfield code="g">21(2022), 5 vom: 01. Aug., Seite 1127-1137</subfield><subfield code="w">(DE-627)340872063</subfield><subfield code="w">(DE-600)2065612-9</subfield><subfield code="x">1572-8137</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:21</subfield><subfield code="g">year:2022</subfield><subfield code="g">number:5</subfield><subfield code="g">day:01</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:1127-1137</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s10825-022-01919-4</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_636</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2031</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2039</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2057</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2093</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2107</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2144</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2188</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2446</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2472</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2548</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4246</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4328</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">21</subfield><subfield code="j">2022</subfield><subfield code="e">5</subfield><subfield code="b">01</subfield><subfield code="c">08</subfield><subfield code="h">1127-1137</subfield></datafield></record></collection>
|
| score |
7.399658 |