Material removal mechanism of RB-SiC ceramics in dry impulse electrical discharge machining
Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lu, Yanjun [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Anmerkung: |
© The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
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| Übergeordnetes Werk: |
Enthalten in: The international journal of advanced manufacturing technology - London : Springer, 1985, 122(2022), 5-6 vom: Sept., Seite 2407-2417 |
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| Übergeordnetes Werk: |
volume:122 ; year:2022 ; number:5-6 ; month:09 ; pages:2407-2417 |
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| DOI / URN: |
10.1007/s00170-022-10023-7 |
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SPR048137618 |
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| 520 | |a Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative regardless of its hardness. However, the relationship between machining efficiency and machining quality is difficult to coordinate because the material removal mechanism of EDM has not been understood. In this paper, the dry single impulse EDM is proposed to machine RB-SiC to reveal the material removal mechanism based on the viewpoints of topographies and phase components of the machined surface. The material removals of Si matrix and SiC particles were analyzed using scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and Raman spectroscopy. Five levels of discharge energy by setting pulse-on time were used to investigate the variation of material removal. The results reveal that short pulse-on time mainly caused material removal of Si matrix due to its lower electrical resistivity and melting temperature. The material removal mechanism of SiC particles was attributed to spalling induced by thermal shock and decomposition at high temperatures. Material migration and oxidation were also found on the electrical discharged machined (EDMed) surface. | ||
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| 650 | 4 | |a Phase components |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Rao, Xiaoshuang |0 (orcid)0000-0003-3509-5006 |4 aut | |
| 700 | 1 | |a Du, Jiaxuan |4 aut | |
| 700 | 1 | |a Guan, Weifeng |4 aut | |
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10.1007/s00170-022-10023-7 doi (DE-627)SPR048137618 (SPR)s00170-022-10023-7-e DE-627 ger DE-627 rakwb eng Lu, Yanjun verfasserin aut Material removal mechanism of RB-SiC ceramics in dry impulse electrical discharge machining 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative regardless of its hardness. However, the relationship between machining efficiency and machining quality is difficult to coordinate because the material removal mechanism of EDM has not been understood. In this paper, the dry single impulse EDM is proposed to machine RB-SiC to reveal the material removal mechanism based on the viewpoints of topographies and phase components of the machined surface. The material removals of Si matrix and SiC particles were analyzed using scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and Raman spectroscopy. Five levels of discharge energy by setting pulse-on time were used to investigate the variation of material removal. The results reveal that short pulse-on time mainly caused material removal of Si matrix due to its lower electrical resistivity and melting temperature. The material removal mechanism of SiC particles was attributed to spalling induced by thermal shock and decomposition at high temperatures. Material migration and oxidation were also found on the electrical discharged machined (EDMed) surface. Material removal mechanism (dpeaa)DE-He213 RB-SiC (dpeaa)DE-He213 Dry EDM (dpeaa)DE-He213 Phase components (dpeaa)DE-He213 Rao, Xiaoshuang (orcid)0000-0003-3509-5006 aut Du, Jiaxuan aut Guan, Weifeng aut Enthalten in The international journal of advanced manufacturing technology London : Springer, 1985 122(2022), 5-6 vom: Sept., Seite 2407-2417 (DE-627)270127712 (DE-600)1476510-X 1433-3015 nnns volume:122 year:2022 number:5-6 month:09 pages:2407-2417 https://dx.doi.org/10.1007/s00170-022-10023-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2022 5-6 09 2407-2417 |
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10.1007/s00170-022-10023-7 doi (DE-627)SPR048137618 (SPR)s00170-022-10023-7-e DE-627 ger DE-627 rakwb eng Lu, Yanjun verfasserin aut Material removal mechanism of RB-SiC ceramics in dry impulse electrical discharge machining 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative regardless of its hardness. However, the relationship between machining efficiency and machining quality is difficult to coordinate because the material removal mechanism of EDM has not been understood. In this paper, the dry single impulse EDM is proposed to machine RB-SiC to reveal the material removal mechanism based on the viewpoints of topographies and phase components of the machined surface. The material removals of Si matrix and SiC particles were analyzed using scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and Raman spectroscopy. Five levels of discharge energy by setting pulse-on time were used to investigate the variation of material removal. The results reveal that short pulse-on time mainly caused material removal of Si matrix due to its lower electrical resistivity and melting temperature. The material removal mechanism of SiC particles was attributed to spalling induced by thermal shock and decomposition at high temperatures. Material migration and oxidation were also found on the electrical discharged machined (EDMed) surface. Material removal mechanism (dpeaa)DE-He213 RB-SiC (dpeaa)DE-He213 Dry EDM (dpeaa)DE-He213 Phase components (dpeaa)DE-He213 Rao, Xiaoshuang (orcid)0000-0003-3509-5006 aut Du, Jiaxuan aut Guan, Weifeng aut Enthalten in The international journal of advanced manufacturing technology London : Springer, 1985 122(2022), 5-6 vom: Sept., Seite 2407-2417 (DE-627)270127712 (DE-600)1476510-X 1433-3015 nnns volume:122 year:2022 number:5-6 month:09 pages:2407-2417 https://dx.doi.org/10.1007/s00170-022-10023-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2022 5-6 09 2407-2417 |
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10.1007/s00170-022-10023-7 doi (DE-627)SPR048137618 (SPR)s00170-022-10023-7-e DE-627 ger DE-627 rakwb eng Lu, Yanjun verfasserin aut Material removal mechanism of RB-SiC ceramics in dry impulse electrical discharge machining 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative regardless of its hardness. However, the relationship between machining efficiency and machining quality is difficult to coordinate because the material removal mechanism of EDM has not been understood. In this paper, the dry single impulse EDM is proposed to machine RB-SiC to reveal the material removal mechanism based on the viewpoints of topographies and phase components of the machined surface. The material removals of Si matrix and SiC particles were analyzed using scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and Raman spectroscopy. Five levels of discharge energy by setting pulse-on time were used to investigate the variation of material removal. The results reveal that short pulse-on time mainly caused material removal of Si matrix due to its lower electrical resistivity and melting temperature. The material removal mechanism of SiC particles was attributed to spalling induced by thermal shock and decomposition at high temperatures. Material migration and oxidation were also found on the electrical discharged machined (EDMed) surface. Material removal mechanism (dpeaa)DE-He213 RB-SiC (dpeaa)DE-He213 Dry EDM (dpeaa)DE-He213 Phase components (dpeaa)DE-He213 Rao, Xiaoshuang (orcid)0000-0003-3509-5006 aut Du, Jiaxuan aut Guan, Weifeng aut Enthalten in The international journal of advanced manufacturing technology London : Springer, 1985 122(2022), 5-6 vom: Sept., Seite 2407-2417 (DE-627)270127712 (DE-600)1476510-X 1433-3015 nnns volume:122 year:2022 number:5-6 month:09 pages:2407-2417 https://dx.doi.org/10.1007/s00170-022-10023-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2022 5-6 09 2407-2417 |
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10.1007/s00170-022-10023-7 doi (DE-627)SPR048137618 (SPR)s00170-022-10023-7-e DE-627 ger DE-627 rakwb eng Lu, Yanjun verfasserin aut Material removal mechanism of RB-SiC ceramics in dry impulse electrical discharge machining 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative regardless of its hardness. However, the relationship between machining efficiency and machining quality is difficult to coordinate because the material removal mechanism of EDM has not been understood. In this paper, the dry single impulse EDM is proposed to machine RB-SiC to reveal the material removal mechanism based on the viewpoints of topographies and phase components of the machined surface. The material removals of Si matrix and SiC particles were analyzed using scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and Raman spectroscopy. Five levels of discharge energy by setting pulse-on time were used to investigate the variation of material removal. The results reveal that short pulse-on time mainly caused material removal of Si matrix due to its lower electrical resistivity and melting temperature. The material removal mechanism of SiC particles was attributed to spalling induced by thermal shock and decomposition at high temperatures. Material migration and oxidation were also found on the electrical discharged machined (EDMed) surface. Material removal mechanism (dpeaa)DE-He213 RB-SiC (dpeaa)DE-He213 Dry EDM (dpeaa)DE-He213 Phase components (dpeaa)DE-He213 Rao, Xiaoshuang (orcid)0000-0003-3509-5006 aut Du, Jiaxuan aut Guan, Weifeng aut Enthalten in The international journal of advanced manufacturing technology London : Springer, 1985 122(2022), 5-6 vom: Sept., Seite 2407-2417 (DE-627)270127712 (DE-600)1476510-X 1433-3015 nnns volume:122 year:2022 number:5-6 month:09 pages:2407-2417 https://dx.doi.org/10.1007/s00170-022-10023-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2022 5-6 09 2407-2417 |
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10.1007/s00170-022-10023-7 doi (DE-627)SPR048137618 (SPR)s00170-022-10023-7-e DE-627 ger DE-627 rakwb eng Lu, Yanjun verfasserin aut Material removal mechanism of RB-SiC ceramics in dry impulse electrical discharge machining 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative regardless of its hardness. However, the relationship between machining efficiency and machining quality is difficult to coordinate because the material removal mechanism of EDM has not been understood. In this paper, the dry single impulse EDM is proposed to machine RB-SiC to reveal the material removal mechanism based on the viewpoints of topographies and phase components of the machined surface. The material removals of Si matrix and SiC particles were analyzed using scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and Raman spectroscopy. Five levels of discharge energy by setting pulse-on time were used to investigate the variation of material removal. The results reveal that short pulse-on time mainly caused material removal of Si matrix due to its lower electrical resistivity and melting temperature. The material removal mechanism of SiC particles was attributed to spalling induced by thermal shock and decomposition at high temperatures. Material migration and oxidation were also found on the electrical discharged machined (EDMed) surface. Material removal mechanism (dpeaa)DE-He213 RB-SiC (dpeaa)DE-He213 Dry EDM (dpeaa)DE-He213 Phase components (dpeaa)DE-He213 Rao, Xiaoshuang (orcid)0000-0003-3509-5006 aut Du, Jiaxuan aut Guan, Weifeng aut Enthalten in The international journal of advanced manufacturing technology London : Springer, 1985 122(2022), 5-6 vom: Sept., Seite 2407-2417 (DE-627)270127712 (DE-600)1476510-X 1433-3015 nnns volume:122 year:2022 number:5-6 month:09 pages:2407-2417 https://dx.doi.org/10.1007/s00170-022-10023-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2022 5-6 09 2407-2417 |
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Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative regardless of its hardness. However, the relationship between machining efficiency and machining quality is difficult to coordinate because the material removal mechanism of EDM has not been understood. In this paper, the dry single impulse EDM is proposed to machine RB-SiC to reveal the material removal mechanism based on the viewpoints of topographies and phase components of the machined surface. The material removals of Si matrix and SiC particles were analyzed using scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and Raman spectroscopy. Five levels of discharge energy by setting pulse-on time were used to investigate the variation of material removal. The results reveal that short pulse-on time mainly caused material removal of Si matrix due to its lower electrical resistivity and melting temperature. The material removal mechanism of SiC particles was attributed to spalling induced by thermal shock and decomposition at high temperatures. 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material removal mechanism of rb-sic ceramics in dry impulse electrical discharge machining |
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Material removal mechanism of RB-SiC ceramics in dry impulse electrical discharge machining |
| abstract |
Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative regardless of its hardness. However, the relationship between machining efficiency and machining quality is difficult to coordinate because the material removal mechanism of EDM has not been understood. In this paper, the dry single impulse EDM is proposed to machine RB-SiC to reveal the material removal mechanism based on the viewpoints of topographies and phase components of the machined surface. The material removals of Si matrix and SiC particles were analyzed using scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and Raman spectroscopy. Five levels of discharge energy by setting pulse-on time were used to investigate the variation of material removal. The results reveal that short pulse-on time mainly caused material removal of Si matrix due to its lower electrical resistivity and melting temperature. The material removal mechanism of SiC particles was attributed to spalling induced by thermal shock and decomposition at high temperatures. Material migration and oxidation were also found on the electrical discharged machined (EDMed) surface. © The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| abstractGer |
Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative regardless of its hardness. However, the relationship between machining efficiency and machining quality is difficult to coordinate because the material removal mechanism of EDM has not been understood. In this paper, the dry single impulse EDM is proposed to machine RB-SiC to reveal the material removal mechanism based on the viewpoints of topographies and phase components of the machined surface. The material removals of Si matrix and SiC particles were analyzed using scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and Raman spectroscopy. Five levels of discharge energy by setting pulse-on time were used to investigate the variation of material removal. The results reveal that short pulse-on time mainly caused material removal of Si matrix due to its lower electrical resistivity and melting temperature. The material removal mechanism of SiC particles was attributed to spalling induced by thermal shock and decomposition at high temperatures. Material migration and oxidation were also found on the electrical discharged machined (EDMed) surface. © The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| abstract_unstemmed |
Abstract Reaction-bonded silicon carbide (RB-SiC) is a high hardness ceramic material with two-phase Si matrix and SiC particles so it is very difficult to machine due to their different electrochemical and mechanical properties. Electrical discharge machining (EDM) provides an effective alternative regardless of its hardness. However, the relationship between machining efficiency and machining quality is difficult to coordinate because the material removal mechanism of EDM has not been understood. In this paper, the dry single impulse EDM is proposed to machine RB-SiC to reveal the material removal mechanism based on the viewpoints of topographies and phase components of the machined surface. The material removals of Si matrix and SiC particles were analyzed using scanning electron microscopy (SEM), energy dispersion spectrum (EDS), and Raman spectroscopy. Five levels of discharge energy by setting pulse-on time were used to investigate the variation of material removal. The results reveal that short pulse-on time mainly caused material removal of Si matrix due to its lower electrical resistivity and melting temperature. The material removal mechanism of SiC particles was attributed to spalling induced by thermal shock and decomposition at high temperatures. Material migration and oxidation were also found on the electrical discharged machined (EDMed) surface. © The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
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Material removal mechanism of RB-SiC ceramics in dry impulse electrical discharge machining |
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https://dx.doi.org/10.1007/s00170-022-10023-7 |
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Rao, Xiaoshuang Du, Jiaxuan Guan, Weifeng |
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Rao, Xiaoshuang Du, Jiaxuan Guan, Weifeng |
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| doi_str |
10.1007/s00170-022-10023-7 |
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2024-07-03T17:14:56.874Z |
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| score |
7.4026756 |