Calculation and analysis of switching losses in IGBT devices based on switching transient processes
Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the m...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Hao, Bin [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Anmerkung: |
© The Author(s) under exclusive licence to The Korean Institute of Power Electronics 2022 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of power electronics - [Singapore] : Springer Singapore, 2020, 22(2022), 10 vom: 08. Juli, Seite 1801-1811 |
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| Übergeordnetes Werk: |
volume:22 ; year:2022 ; number:10 ; day:08 ; month:07 ; pages:1801-1811 |
| Links: |
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| DOI / URN: |
10.1007/s43236-022-00477-z |
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| Katalog-ID: |
SPR048181080 |
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| 245 | 1 | 0 | |a Calculation and analysis of switching losses in IGBT devices based on switching transient processes |
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| 520 | |a Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters. | ||
| 650 | 4 | |a Switching loss |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Switching transient process |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Accurate calculation method |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Approximate analytical calculation |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Peng, Cheng |4 aut | |
| 700 | 1 | |a Tang, Xinling |4 aut | |
| 700 | 1 | |a Zhao, Zhibin |4 aut | |
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10.1007/s43236-022-00477-z doi (DE-627)SPR048181080 (SPR)s43236-022-00477-z-e DE-627 ger DE-627 rakwb eng Hao, Bin verfasserin aut Calculation and analysis of switching losses in IGBT devices based on switching transient processes 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) under exclusive licence to The Korean Institute of Power Electronics 2022 Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters. Switching loss (dpeaa)DE-He213 Switching transient process (dpeaa)DE-He213 Accurate calculation method (dpeaa)DE-He213 Approximate analytical calculation (dpeaa)DE-He213 Peng, Cheng aut Tang, Xinling aut Zhao, Zhibin aut Enthalten in Journal of power electronics [Singapore] : Springer Singapore, 2020 22(2022), 10 vom: 08. Juli, Seite 1801-1811 (DE-627)1689175095 (DE-600)3007272-4 2093-4718 nnns volume:22 year:2022 number:10 day:08 month:07 pages:1801-1811 https://dx.doi.org/10.1007/s43236-022-00477-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 22 2022 10 08 07 1801-1811 |
| spelling |
10.1007/s43236-022-00477-z doi (DE-627)SPR048181080 (SPR)s43236-022-00477-z-e DE-627 ger DE-627 rakwb eng Hao, Bin verfasserin aut Calculation and analysis of switching losses in IGBT devices based on switching transient processes 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) under exclusive licence to The Korean Institute of Power Electronics 2022 Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters. Switching loss (dpeaa)DE-He213 Switching transient process (dpeaa)DE-He213 Accurate calculation method (dpeaa)DE-He213 Approximate analytical calculation (dpeaa)DE-He213 Peng, Cheng aut Tang, Xinling aut Zhao, Zhibin aut Enthalten in Journal of power electronics [Singapore] : Springer Singapore, 2020 22(2022), 10 vom: 08. Juli, Seite 1801-1811 (DE-627)1689175095 (DE-600)3007272-4 2093-4718 nnns volume:22 year:2022 number:10 day:08 month:07 pages:1801-1811 https://dx.doi.org/10.1007/s43236-022-00477-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 22 2022 10 08 07 1801-1811 |
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10.1007/s43236-022-00477-z doi (DE-627)SPR048181080 (SPR)s43236-022-00477-z-e DE-627 ger DE-627 rakwb eng Hao, Bin verfasserin aut Calculation and analysis of switching losses in IGBT devices based on switching transient processes 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) under exclusive licence to The Korean Institute of Power Electronics 2022 Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters. Switching loss (dpeaa)DE-He213 Switching transient process (dpeaa)DE-He213 Accurate calculation method (dpeaa)DE-He213 Approximate analytical calculation (dpeaa)DE-He213 Peng, Cheng aut Tang, Xinling aut Zhao, Zhibin aut Enthalten in Journal of power electronics [Singapore] : Springer Singapore, 2020 22(2022), 10 vom: 08. Juli, Seite 1801-1811 (DE-627)1689175095 (DE-600)3007272-4 2093-4718 nnns volume:22 year:2022 number:10 day:08 month:07 pages:1801-1811 https://dx.doi.org/10.1007/s43236-022-00477-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 22 2022 10 08 07 1801-1811 |
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10.1007/s43236-022-00477-z doi (DE-627)SPR048181080 (SPR)s43236-022-00477-z-e DE-627 ger DE-627 rakwb eng Hao, Bin verfasserin aut Calculation and analysis of switching losses in IGBT devices based on switching transient processes 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) under exclusive licence to The Korean Institute of Power Electronics 2022 Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters. Switching loss (dpeaa)DE-He213 Switching transient process (dpeaa)DE-He213 Accurate calculation method (dpeaa)DE-He213 Approximate analytical calculation (dpeaa)DE-He213 Peng, Cheng aut Tang, Xinling aut Zhao, Zhibin aut Enthalten in Journal of power electronics [Singapore] : Springer Singapore, 2020 22(2022), 10 vom: 08. Juli, Seite 1801-1811 (DE-627)1689175095 (DE-600)3007272-4 2093-4718 nnns volume:22 year:2022 number:10 day:08 month:07 pages:1801-1811 https://dx.doi.org/10.1007/s43236-022-00477-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 22 2022 10 08 07 1801-1811 |
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10.1007/s43236-022-00477-z doi (DE-627)SPR048181080 (SPR)s43236-022-00477-z-e DE-627 ger DE-627 rakwb eng Hao, Bin verfasserin aut Calculation and analysis of switching losses in IGBT devices based on switching transient processes 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) under exclusive licence to The Korean Institute of Power Electronics 2022 Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters. Switching loss (dpeaa)DE-He213 Switching transient process (dpeaa)DE-He213 Accurate calculation method (dpeaa)DE-He213 Approximate analytical calculation (dpeaa)DE-He213 Peng, Cheng aut Tang, Xinling aut Zhao, Zhibin aut Enthalten in Journal of power electronics [Singapore] : Springer Singapore, 2020 22(2022), 10 vom: 08. Juli, Seite 1801-1811 (DE-627)1689175095 (DE-600)3007272-4 2093-4718 nnns volume:22 year:2022 number:10 day:08 month:07 pages:1801-1811 https://dx.doi.org/10.1007/s43236-022-00477-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 22 2022 10 08 07 1801-1811 |
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Hao, Bin @@aut@@ Peng, Cheng @@aut@@ Tang, Xinling @@aut@@ Zhao, Zhibin @@aut@@ |
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Hao, Bin |
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Hao, Bin misc Switching loss misc Switching transient process misc Accurate calculation method misc Approximate analytical calculation Calculation and analysis of switching losses in IGBT devices based on switching transient processes |
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Calculation and analysis of switching losses in IGBT devices based on switching transient processes Switching loss (dpeaa)DE-He213 Switching transient process (dpeaa)DE-He213 Accurate calculation method (dpeaa)DE-He213 Approximate analytical calculation (dpeaa)DE-He213 |
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Calculation and analysis of switching losses in IGBT devices based on switching transient processes |
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Calculation and analysis of switching losses in IGBT devices based on switching transient processes |
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calculation and analysis of switching losses in igbt devices based on switching transient processes |
| title_auth |
Calculation and analysis of switching losses in IGBT devices based on switching transient processes |
| abstract |
Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters. © The Author(s) under exclusive licence to The Korean Institute of Power Electronics 2022 |
| abstractGer |
Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters. © The Author(s) under exclusive licence to The Korean Institute of Power Electronics 2022 |
| abstract_unstemmed |
Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters. © The Author(s) under exclusive licence to The Korean Institute of Power Electronics 2022 |
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Calculation and analysis of switching losses in IGBT devices based on switching transient processes |
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2024-07-03T17:33:26.313Z |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR048181080</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230509112236.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">220923s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s43236-022-00477-z</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR048181080</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s43236-022-00477-z-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hao, Bin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Calculation and analysis of switching losses in IGBT devices based on switching transient processes</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s) under exclusive licence to The Korean Institute of Power Electronics 2022</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. 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