A multi-value 3D crossbar array nonvolatile memory based on pure memristors
Abstract How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Sun, Jingru [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Anmerkung: |
© The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022 |
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| Übergeordnetes Werk: |
Enthalten in: European physical journal special topics - Berlin : Springer, 2007, 231(2022), 16-17 vom: 06. Mai, Seite 3119-3130 |
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| Übergeordnetes Werk: |
volume:231 ; year:2022 ; number:16-17 ; day:06 ; month:05 ; pages:3119-3130 |
| Links: |
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| DOI / URN: |
10.1140/epjs/s11734-022-00576-9 |
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| Katalog-ID: |
SPR048790451 |
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| 100 | 1 | |a Sun, Jingru |e verfasserin |0 (orcid)0000-0001-9474-7778 |4 aut | |
| 245 | 1 | 2 | |a A multi-value 3D crossbar array nonvolatile memory based on pure memristors |
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| 520 | |a Abstract How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. Moreover, the structure proposed in this paper can also be used in the circuit design of the neuromorphic network, logic circuit, and other memristive circuits. | ||
| 700 | 1 | |a Kang, Kexin |4 aut | |
| 700 | 1 | |a Sun, Yichuang |4 aut | |
| 700 | 1 | |a Hong, Qinghui |4 aut | |
| 700 | 1 | |a Wang, Chunhua |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t European physical journal special topics |d Berlin : Springer, 2007 |g 231(2022), 16-17 vom: 06. Mai, Seite 3119-3130 |w (DE-627)523571909 |w (DE-600)2267176-6 |x 1951-6401 |7 nnns |
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10.1140/epjs/s11734-022-00576-9 doi (DE-627)SPR048790451 (SPR)s11734-022-00576-9-e DE-627 ger DE-627 rakwb eng Sun, Jingru verfasserin (orcid)0000-0001-9474-7778 aut A multi-value 3D crossbar array nonvolatile memory based on pure memristors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022 Abstract How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. Moreover, the structure proposed in this paper can also be used in the circuit design of the neuromorphic network, logic circuit, and other memristive circuits. Kang, Kexin aut Sun, Yichuang aut Hong, Qinghui aut Wang, Chunhua aut Enthalten in European physical journal special topics Berlin : Springer, 2007 231(2022), 16-17 vom: 06. Mai, Seite 3119-3130 (DE-627)523571909 (DE-600)2267176-6 1951-6401 nnns volume:231 year:2022 number:16-17 day:06 month:05 pages:3119-3130 https://dx.doi.org/10.1140/epjs/s11734-022-00576-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 231 2022 16-17 06 05 3119-3130 |
| spelling |
10.1140/epjs/s11734-022-00576-9 doi (DE-627)SPR048790451 (SPR)s11734-022-00576-9-e DE-627 ger DE-627 rakwb eng Sun, Jingru verfasserin (orcid)0000-0001-9474-7778 aut A multi-value 3D crossbar array nonvolatile memory based on pure memristors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022 Abstract How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. Moreover, the structure proposed in this paper can also be used in the circuit design of the neuromorphic network, logic circuit, and other memristive circuits. Kang, Kexin aut Sun, Yichuang aut Hong, Qinghui aut Wang, Chunhua aut Enthalten in European physical journal special topics Berlin : Springer, 2007 231(2022), 16-17 vom: 06. Mai, Seite 3119-3130 (DE-627)523571909 (DE-600)2267176-6 1951-6401 nnns volume:231 year:2022 number:16-17 day:06 month:05 pages:3119-3130 https://dx.doi.org/10.1140/epjs/s11734-022-00576-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 231 2022 16-17 06 05 3119-3130 |
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10.1140/epjs/s11734-022-00576-9 doi (DE-627)SPR048790451 (SPR)s11734-022-00576-9-e DE-627 ger DE-627 rakwb eng Sun, Jingru verfasserin (orcid)0000-0001-9474-7778 aut A multi-value 3D crossbar array nonvolatile memory based on pure memristors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022 Abstract How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. Moreover, the structure proposed in this paper can also be used in the circuit design of the neuromorphic network, logic circuit, and other memristive circuits. Kang, Kexin aut Sun, Yichuang aut Hong, Qinghui aut Wang, Chunhua aut Enthalten in European physical journal special topics Berlin : Springer, 2007 231(2022), 16-17 vom: 06. Mai, Seite 3119-3130 (DE-627)523571909 (DE-600)2267176-6 1951-6401 nnns volume:231 year:2022 number:16-17 day:06 month:05 pages:3119-3130 https://dx.doi.org/10.1140/epjs/s11734-022-00576-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 231 2022 16-17 06 05 3119-3130 |
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10.1140/epjs/s11734-022-00576-9 doi (DE-627)SPR048790451 (SPR)s11734-022-00576-9-e DE-627 ger DE-627 rakwb eng Sun, Jingru verfasserin (orcid)0000-0001-9474-7778 aut A multi-value 3D crossbar array nonvolatile memory based on pure memristors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022 Abstract How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. Moreover, the structure proposed in this paper can also be used in the circuit design of the neuromorphic network, logic circuit, and other memristive circuits. Kang, Kexin aut Sun, Yichuang aut Hong, Qinghui aut Wang, Chunhua aut Enthalten in European physical journal special topics Berlin : Springer, 2007 231(2022), 16-17 vom: 06. Mai, Seite 3119-3130 (DE-627)523571909 (DE-600)2267176-6 1951-6401 nnns volume:231 year:2022 number:16-17 day:06 month:05 pages:3119-3130 https://dx.doi.org/10.1140/epjs/s11734-022-00576-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 231 2022 16-17 06 05 3119-3130 |
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10.1140/epjs/s11734-022-00576-9 doi (DE-627)SPR048790451 (SPR)s11734-022-00576-9-e DE-627 ger DE-627 rakwb eng Sun, Jingru verfasserin (orcid)0000-0001-9474-7778 aut A multi-value 3D crossbar array nonvolatile memory based on pure memristors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022 Abstract How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. Moreover, the structure proposed in this paper can also be used in the circuit design of the neuromorphic network, logic circuit, and other memristive circuits. Kang, Kexin aut Sun, Yichuang aut Hong, Qinghui aut Wang, Chunhua aut Enthalten in European physical journal special topics Berlin : Springer, 2007 231(2022), 16-17 vom: 06. Mai, Seite 3119-3130 (DE-627)523571909 (DE-600)2267176-6 1951-6401 nnns volume:231 year:2022 number:16-17 day:06 month:05 pages:3119-3130 https://dx.doi.org/10.1140/epjs/s11734-022-00576-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 231 2022 16-17 06 05 3119-3130 |
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In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. 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multi-value 3d crossbar array nonvolatile memory based on pure memristors |
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A multi-value 3D crossbar array nonvolatile memory based on pure memristors |
| abstract |
Abstract How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. Moreover, the structure proposed in this paper can also be used in the circuit design of the neuromorphic network, logic circuit, and other memristive circuits. © The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022 |
| abstractGer |
Abstract How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. Moreover, the structure proposed in this paper can also be used in the circuit design of the neuromorphic network, logic circuit, and other memristive circuits. © The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022 |
| abstract_unstemmed |
Abstract How to improve the storage density and solve the sneak path current problem has become the key to the design of nonvolatile memristive memory. In this paper, a high storage density and high reading/writing speed 3D crossbar array non-volatile memory based on pure memristors is proposed. The main works are as follows: (1) an extensible memristive cluster is proposed, (2) a memristive switch is designed, and (3) a 3D crossbar array non-volatile memory is constructed. The memory cell of the 3D crossbar array non-volatile memory is constructed by pure memristors and can be extended by adding memristor in a memristive cluster or adding memristive clusters in a memory cell to realize multi-value storage. The memristive switch can effectively reduce the sneak path current effect. The pure memristive memory cell solves the conflict between the storage density and sneak path current effect and greatly improves the storage density of memory cells. Furthermore, the 3D cross-array structure allows different memory cells on the same layer or different layers to be read and written in parallel, which greatly improves the speed of reading and writing. Simulations with PSpice verifies that the proposed memristive cluster can realize stable multi-value storage, has higher storage density, faster reading and writing speed, fewer input ports and output ports, better stability, and lower power consumption. Moreover, the structure proposed in this paper can also be used in the circuit design of the neuromorphic network, logic circuit, and other memristive circuits. © The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022 |
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A multi-value 3D crossbar array nonvolatile memory based on pure memristors |
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https://dx.doi.org/10.1140/epjs/s11734-022-00576-9 |
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Kang, Kexin Sun, Yichuang Hong, Qinghui Wang, Chunhua |
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Kang, Kexin Sun, Yichuang Hong, Qinghui Wang, Chunhua |
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| doi_str |
10.1140/epjs/s11734-022-00576-9 |
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2024-07-03T21:30:05.235Z |
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| score |
7.402128 |