Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications

Abstract Silicon and Polysilicon are used as piezoresistive materials in MEMS (Micro Electromechanical system) piezoresistive pressure sensors because of its reproducibility and enhanced sensitivity. In harsh environments like corrosive media, high radiation and high temperatures, there is a need fo...
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Autor*in:	Kanekal, Dadasikandar [verfasserIn] Jindal, Sumit Kumar

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	MEMS Silicon Carbide Piezoresistive pressure sensor Freely supported rectangular diaphragm Harsh environments Sensitivity

Anmerkung:	© The Author(s), under exclusive licence to Springer Nature B.V. 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Übergeordnetes Werk:	Enthalten in: Silicon - Dordrecht : Springer Netherlands, 2009, 15(2022), 4 vom: 06. Okt., Seite 1947-1959
Übergeordnetes Werk:	volume:15 ; year:2022 ; number:4 ; day:06 ; month:10 ; pages:1947-1959

Links:	Volltext

DOI / URN:	10.1007/s12633-022-02146-z

Katalog-ID:	SPR049577808

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allfields	10.1007/s12633-022-02146-z doi (DE-627)SPR049577808 (SPR)s12633-022-02146-z-e DE-627 ger DE-627 rakwb eng Kanekal, Dadasikandar verfasserin aut Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Nature B.V. 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Silicon and Polysilicon are used as piezoresistive materials in MEMS (Micro Electromechanical system) piezoresistive pressure sensors because of its reproducibility and enhanced sensitivity. In harsh environments like corrosive media, high radiation and high temperatures, there is a need for pressure measurement. Silicon Carbide material is a promising candidate for harsh environments because it has superior thermomechanical properties. Our proposed work presents MEMS Silicon Carbide piezoresistive pressure sensor on a freely supported rectangular diaphragm for high altitude robust applications at elevated temperature and pressure. In this work, analytical modelling and simulation approach is used to model and analysed Silicon Carbide piezoresistive pressure sensor characteristics and to determine its optimal design. An in-depth step by step derivation for key performance parameters of the sensor is examined for freely supported rectangular diaphragm piezoresistive pressure sensor. Using thin plate and small deflection theory, expressions are simulated numerically using MATLAB software to determine its sensitivity. Finite Element Analysis (FEA) is done to validate the effectiveness of the theoretical methods. The analysis conducted using FEM (Finite Element Method) dovetail perfectly with the modelled results. At the end, the simulated results have been compared with the published results reported in the literature. MEMS (dpeaa)DE-He213 Silicon Carbide (dpeaa)DE-He213 Piezoresistive pressure sensor (dpeaa)DE-He213 Freely supported rectangular diaphragm (dpeaa)DE-He213 Harsh environments (dpeaa)DE-He213 Sensitivity (dpeaa)DE-He213 Jindal, Sumit Kumar aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 15(2022), 4 vom: 06. Okt., Seite 1947-1959 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:15 year:2022 number:4 day:06 month:10 pages:1947-1959 https://dx.doi.org/10.1007/s12633-022-02146-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2022 4 06 10 1947-1959
spelling	10.1007/s12633-022-02146-z doi (DE-627)SPR049577808 (SPR)s12633-022-02146-z-e DE-627 ger DE-627 rakwb eng Kanekal, Dadasikandar verfasserin aut Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Nature B.V. 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Silicon and Polysilicon are used as piezoresistive materials in MEMS (Micro Electromechanical system) piezoresistive pressure sensors because of its reproducibility and enhanced sensitivity. In harsh environments like corrosive media, high radiation and high temperatures, there is a need for pressure measurement. Silicon Carbide material is a promising candidate for harsh environments because it has superior thermomechanical properties. Our proposed work presents MEMS Silicon Carbide piezoresistive pressure sensor on a freely supported rectangular diaphragm for high altitude robust applications at elevated temperature and pressure. In this work, analytical modelling and simulation approach is used to model and analysed Silicon Carbide piezoresistive pressure sensor characteristics and to determine its optimal design. An in-depth step by step derivation for key performance parameters of the sensor is examined for freely supported rectangular diaphragm piezoresistive pressure sensor. Using thin plate and small deflection theory, expressions are simulated numerically using MATLAB software to determine its sensitivity. Finite Element Analysis (FEA) is done to validate the effectiveness of the theoretical methods. The analysis conducted using FEM (Finite Element Method) dovetail perfectly with the modelled results. At the end, the simulated results have been compared with the published results reported in the literature. MEMS (dpeaa)DE-He213 Silicon Carbide (dpeaa)DE-He213 Piezoresistive pressure sensor (dpeaa)DE-He213 Freely supported rectangular diaphragm (dpeaa)DE-He213 Harsh environments (dpeaa)DE-He213 Sensitivity (dpeaa)DE-He213 Jindal, Sumit Kumar aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 15(2022), 4 vom: 06. Okt., Seite 1947-1959 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:15 year:2022 number:4 day:06 month:10 pages:1947-1959 https://dx.doi.org/10.1007/s12633-022-02146-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2022 4 06 10 1947-1959
allfields_unstemmed	10.1007/s12633-022-02146-z doi (DE-627)SPR049577808 (SPR)s12633-022-02146-z-e DE-627 ger DE-627 rakwb eng Kanekal, Dadasikandar verfasserin aut Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Nature B.V. 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Silicon and Polysilicon are used as piezoresistive materials in MEMS (Micro Electromechanical system) piezoresistive pressure sensors because of its reproducibility and enhanced sensitivity. In harsh environments like corrosive media, high radiation and high temperatures, there is a need for pressure measurement. Silicon Carbide material is a promising candidate for harsh environments because it has superior thermomechanical properties. Our proposed work presents MEMS Silicon Carbide piezoresistive pressure sensor on a freely supported rectangular diaphragm for high altitude robust applications at elevated temperature and pressure. In this work, analytical modelling and simulation approach is used to model and analysed Silicon Carbide piezoresistive pressure sensor characteristics and to determine its optimal design. An in-depth step by step derivation for key performance parameters of the sensor is examined for freely supported rectangular diaphragm piezoresistive pressure sensor. Using thin plate and small deflection theory, expressions are simulated numerically using MATLAB software to determine its sensitivity. Finite Element Analysis (FEA) is done to validate the effectiveness of the theoretical methods. The analysis conducted using FEM (Finite Element Method) dovetail perfectly with the modelled results. At the end, the simulated results have been compared with the published results reported in the literature. MEMS (dpeaa)DE-He213 Silicon Carbide (dpeaa)DE-He213 Piezoresistive pressure sensor (dpeaa)DE-He213 Freely supported rectangular diaphragm (dpeaa)DE-He213 Harsh environments (dpeaa)DE-He213 Sensitivity (dpeaa)DE-He213 Jindal, Sumit Kumar aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 15(2022), 4 vom: 06. Okt., Seite 1947-1959 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:15 year:2022 number:4 day:06 month:10 pages:1947-1959 https://dx.doi.org/10.1007/s12633-022-02146-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2022 4 06 10 1947-1959
allfieldsGer	10.1007/s12633-022-02146-z doi (DE-627)SPR049577808 (SPR)s12633-022-02146-z-e DE-627 ger DE-627 rakwb eng Kanekal, Dadasikandar verfasserin aut Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Nature B.V. 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Silicon and Polysilicon are used as piezoresistive materials in MEMS (Micro Electromechanical system) piezoresistive pressure sensors because of its reproducibility and enhanced sensitivity. In harsh environments like corrosive media, high radiation and high temperatures, there is a need for pressure measurement. Silicon Carbide material is a promising candidate for harsh environments because it has superior thermomechanical properties. Our proposed work presents MEMS Silicon Carbide piezoresistive pressure sensor on a freely supported rectangular diaphragm for high altitude robust applications at elevated temperature and pressure. In this work, analytical modelling and simulation approach is used to model and analysed Silicon Carbide piezoresistive pressure sensor characteristics and to determine its optimal design. An in-depth step by step derivation for key performance parameters of the sensor is examined for freely supported rectangular diaphragm piezoresistive pressure sensor. Using thin plate and small deflection theory, expressions are simulated numerically using MATLAB software to determine its sensitivity. Finite Element Analysis (FEA) is done to validate the effectiveness of the theoretical methods. The analysis conducted using FEM (Finite Element Method) dovetail perfectly with the modelled results. At the end, the simulated results have been compared with the published results reported in the literature. MEMS (dpeaa)DE-He213 Silicon Carbide (dpeaa)DE-He213 Piezoresistive pressure sensor (dpeaa)DE-He213 Freely supported rectangular diaphragm (dpeaa)DE-He213 Harsh environments (dpeaa)DE-He213 Sensitivity (dpeaa)DE-He213 Jindal, Sumit Kumar aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 15(2022), 4 vom: 06. Okt., Seite 1947-1959 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:15 year:2022 number:4 day:06 month:10 pages:1947-1959 https://dx.doi.org/10.1007/s12633-022-02146-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2022 4 06 10 1947-1959
allfieldsSound	10.1007/s12633-022-02146-z doi (DE-627)SPR049577808 (SPR)s12633-022-02146-z-e DE-627 ger DE-627 rakwb eng Kanekal, Dadasikandar verfasserin aut Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Nature B.V. 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract Silicon and Polysilicon are used as piezoresistive materials in MEMS (Micro Electromechanical system) piezoresistive pressure sensors because of its reproducibility and enhanced sensitivity. In harsh environments like corrosive media, high radiation and high temperatures, there is a need for pressure measurement. Silicon Carbide material is a promising candidate for harsh environments because it has superior thermomechanical properties. Our proposed work presents MEMS Silicon Carbide piezoresistive pressure sensor on a freely supported rectangular diaphragm for high altitude robust applications at elevated temperature and pressure. In this work, analytical modelling and simulation approach is used to model and analysed Silicon Carbide piezoresistive pressure sensor characteristics and to determine its optimal design. An in-depth step by step derivation for key performance parameters of the sensor is examined for freely supported rectangular diaphragm piezoresistive pressure sensor. Using thin plate and small deflection theory, expressions are simulated numerically using MATLAB software to determine its sensitivity. Finite Element Analysis (FEA) is done to validate the effectiveness of the theoretical methods. The analysis conducted using FEM (Finite Element Method) dovetail perfectly with the modelled results. At the end, the simulated results have been compared with the published results reported in the literature. MEMS (dpeaa)DE-He213 Silicon Carbide (dpeaa)DE-He213 Piezoresistive pressure sensor (dpeaa)DE-He213 Freely supported rectangular diaphragm (dpeaa)DE-He213 Harsh environments (dpeaa)DE-He213 Sensitivity (dpeaa)DE-He213 Jindal, Sumit Kumar aut Enthalten in Silicon Dordrecht : Springer Netherlands, 2009 15(2022), 4 vom: 06. Okt., Seite 1947-1959 (DE-627)598789545 (DE-600)2491562-2 1876-9918 nnns volume:15 year:2022 number:4 day:06 month:10 pages:1947-1959 https://dx.doi.org/10.1007/s12633-022-02146-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2022 4 06 10 1947-1959
language	English
source	Enthalten in Silicon 15(2022), 4 vom: 06. Okt., Seite 1947-1959 volume:15 year:2022 number:4 day:06 month:10 pages:1947-1959
sourceStr	Enthalten in Silicon 15(2022), 4 vom: 06. Okt., Seite 1947-1959 volume:15 year:2022 number:4 day:06 month:10 pages:1947-1959
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	MEMS Silicon Carbide Piezoresistive pressure sensor Freely supported rectangular diaphragm Harsh environments Sensitivity
isfreeaccess_bool	false
container_title	Silicon
authorswithroles_txt_mv	Kanekal, Dadasikandar @@aut@@ Jindal, Sumit Kumar @@aut@@
publishDateDaySort_date	2022-10-06T00:00:00Z
hierarchy_top_id	598789545
id	SPR049577808
language_de	englisch
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author	Kanekal, Dadasikandar
spellingShingle	Kanekal, Dadasikandar misc MEMS misc Silicon Carbide misc Piezoresistive pressure sensor misc Freely supported rectangular diaphragm misc Harsh environments misc Sensitivity Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications
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topic_title	Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications MEMS (dpeaa)DE-He213 Silicon Carbide (dpeaa)DE-He213 Piezoresistive pressure sensor (dpeaa)DE-He213 Freely supported rectangular diaphragm (dpeaa)DE-He213 Harsh environments (dpeaa)DE-He213 Sensitivity (dpeaa)DE-He213
topic	misc MEMS misc Silicon Carbide misc Piezoresistive pressure sensor misc Freely supported rectangular diaphragm misc Harsh environments misc Sensitivity
topic_unstemmed	misc MEMS misc Silicon Carbide misc Piezoresistive pressure sensor misc Freely supported rectangular diaphragm misc Harsh environments misc Sensitivity
topic_browse	misc MEMS misc Silicon Carbide misc Piezoresistive pressure sensor misc Freely supported rectangular diaphragm misc Harsh environments misc Sensitivity
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title	Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications
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title_full	Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications
author_sort	Kanekal, Dadasikandar
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author_browse	Kanekal, Dadasikandar Jindal, Sumit Kumar
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doi_str_mv	10.1007/s12633-022-02146-z
title_sort	investigation of mems piezoresistive pressure sensor with a freely supported rectangular silicon carbide diaphragm as a primary sensing element for altitudinal applications
title_auth	Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications
abstract	Abstract Silicon and Polysilicon are used as piezoresistive materials in MEMS (Micro Electromechanical system) piezoresistive pressure sensors because of its reproducibility and enhanced sensitivity. In harsh environments like corrosive media, high radiation and high temperatures, there is a need for pressure measurement. Silicon Carbide material is a promising candidate for harsh environments because it has superior thermomechanical properties. Our proposed work presents MEMS Silicon Carbide piezoresistive pressure sensor on a freely supported rectangular diaphragm for high altitude robust applications at elevated temperature and pressure. In this work, analytical modelling and simulation approach is used to model and analysed Silicon Carbide piezoresistive pressure sensor characteristics and to determine its optimal design. An in-depth step by step derivation for key performance parameters of the sensor is examined for freely supported rectangular diaphragm piezoresistive pressure sensor. Using thin plate and small deflection theory, expressions are simulated numerically using MATLAB software to determine its sensitivity. Finite Element Analysis (FEA) is done to validate the effectiveness of the theoretical methods. The analysis conducted using FEM (Finite Element Method) dovetail perfectly with the modelled results. At the end, the simulated results have been compared with the published results reported in the literature. © The Author(s), under exclusive licence to Springer Nature B.V. 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
abstractGer	Abstract Silicon and Polysilicon are used as piezoresistive materials in MEMS (Micro Electromechanical system) piezoresistive pressure sensors because of its reproducibility and enhanced sensitivity. In harsh environments like corrosive media, high radiation and high temperatures, there is a need for pressure measurement. Silicon Carbide material is a promising candidate for harsh environments because it has superior thermomechanical properties. Our proposed work presents MEMS Silicon Carbide piezoresistive pressure sensor on a freely supported rectangular diaphragm for high altitude robust applications at elevated temperature and pressure. In this work, analytical modelling and simulation approach is used to model and analysed Silicon Carbide piezoresistive pressure sensor characteristics and to determine its optimal design. An in-depth step by step derivation for key performance parameters of the sensor is examined for freely supported rectangular diaphragm piezoresistive pressure sensor. Using thin plate and small deflection theory, expressions are simulated numerically using MATLAB software to determine its sensitivity. Finite Element Analysis (FEA) is done to validate the effectiveness of the theoretical methods. The analysis conducted using FEM (Finite Element Method) dovetail perfectly with the modelled results. At the end, the simulated results have been compared with the published results reported in the literature. © The Author(s), under exclusive licence to Springer Nature B.V. 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
abstract_unstemmed	Abstract Silicon and Polysilicon are used as piezoresistive materials in MEMS (Micro Electromechanical system) piezoresistive pressure sensors because of its reproducibility and enhanced sensitivity. In harsh environments like corrosive media, high radiation and high temperatures, there is a need for pressure measurement. Silicon Carbide material is a promising candidate for harsh environments because it has superior thermomechanical properties. Our proposed work presents MEMS Silicon Carbide piezoresistive pressure sensor on a freely supported rectangular diaphragm for high altitude robust applications at elevated temperature and pressure. In this work, analytical modelling and simulation approach is used to model and analysed Silicon Carbide piezoresistive pressure sensor characteristics and to determine its optimal design. An in-depth step by step derivation for key performance parameters of the sensor is examined for freely supported rectangular diaphragm piezoresistive pressure sensor. Using thin plate and small deflection theory, expressions are simulated numerically using MATLAB software to determine its sensitivity. Finite Element Analysis (FEA) is done to validate the effectiveness of the theoretical methods. The analysis conducted using FEM (Finite Element Method) dovetail perfectly with the modelled results. At the end, the simulated results have been compared with the published results reported in the literature. © The Author(s), under exclusive licence to Springer Nature B.V. 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
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title_short	Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications
url	https://dx.doi.org/10.1007/s12633-022-02146-z
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up_date	2024-07-04T01:24:25.089Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR049577808</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230510064913.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230308s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12633-022-02146-z</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR049577808</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s12633-022-02146-z-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kanekal, Dadasikandar</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s), under exclusive licence to Springer Nature B.V. 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Silicon and Polysilicon are used as piezoresistive materials in MEMS (Micro Electromechanical system) piezoresistive pressure sensors because of its reproducibility and enhanced sensitivity. In harsh environments like corrosive media, high radiation and high temperatures, there is a need for pressure measurement. Silicon Carbide material is a promising candidate for harsh environments because it has superior thermomechanical properties. Our proposed work presents MEMS Silicon Carbide piezoresistive pressure sensor on a freely supported rectangular diaphragm for high altitude robust applications at elevated temperature and pressure. In this work, analytical modelling and simulation approach is used to model and analysed Silicon Carbide piezoresistive pressure sensor characteristics and to determine its optimal design. An in-depth step by step derivation for key performance parameters of the sensor is examined for freely supported rectangular diaphragm piezoresistive pressure sensor. Using thin plate and small deflection theory, expressions are simulated numerically using MATLAB software to determine its sensitivity. Finite Element Analysis (FEA) is done to validate the effectiveness of the theoretical methods. The analysis conducted using FEM (Finite Element Method) dovetail perfectly with the modelled results. 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Investigation of MEMS Piezoresistive Pressure Sensor with a Freely Supported Rectangular Silicon Carbide Diaphragm as a Primary Sensing Element for Altitudinal Applications

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