Annealing atmosphere-dependent capacitive energy storage
Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Yang, Bing-Bing [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2023 |
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| Schlagwörter: |
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| Anmerkung: |
© Youke Publishing Co.,Ltd 2023 |
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| Übergeordnetes Werk: |
Enthalten in: Rare metals - Beijing : Yejin Gongye Chubanshe, 1989, 42(2023), 5 vom: 26. Feb., Seite 1465-1471 |
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| Übergeordnetes Werk: |
volume:42 ; year:2023 ; number:5 ; day:26 ; month:02 ; pages:1465-1471 |
| Links: |
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| DOI / URN: |
10.1007/s12598-022-02225-5 |
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| Katalog-ID: |
SPR050139185 |
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| 520 | |a Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report enhanced energy density and efficiency in the Aurivillius $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films by controlling the post-annealing atmosphere. The results demonstrate that the fabrication atmosphere has significant effects on the film texture and defects. As the increase of the oxygen pressure of annealing atmosphere, the $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films show a preferred growth orientation of (00l) and fewer defects, which leads to a higher polarization and breakdown field for the film annealed in air atmosphere and thus help to achieve an ultrahigh energy density of 59.4 J·$ cm^{−3} $ and an improved efficiency of 81.2%. Moreover, the film also exhibits excellent cycling reliability and good thermal stability. The $ Pb_{2} %$ Bi_{4} %$ T_{i5} %$ O_{18} $ films show a significant potential application for dielectric capacitors. Graphical abstract | ||
| 650 | 4 | |a Aurivillius phase film |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Annealing atmosphere |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Energy density |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Efficiency |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Tong, Hai-Yun |4 aut | |
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| 700 | 1 | |a Pan, Hao |4 aut | |
| 700 | 1 | |a Lin, Yuan-Hua |0 (orcid)0000-0002-5652-6701 |4 aut | |
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10.1007/s12598-022-02225-5 doi (DE-627)SPR050139185 (SPR)s12598-022-02225-5-e DE-627 ger DE-627 rakwb eng Yang, Bing-Bing verfasserin aut Annealing atmosphere-dependent capacitive energy storage 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Youke Publishing Co.,Ltd 2023 Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report enhanced energy density and efficiency in the Aurivillius $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films by controlling the post-annealing atmosphere. The results demonstrate that the fabrication atmosphere has significant effects on the film texture and defects. As the increase of the oxygen pressure of annealing atmosphere, the $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films show a preferred growth orientation of (00l) and fewer defects, which leads to a higher polarization and breakdown field for the film annealed in air atmosphere and thus help to achieve an ultrahigh energy density of 59.4 J·$ cm^{−3} $ and an improved efficiency of 81.2%. Moreover, the film also exhibits excellent cycling reliability and good thermal stability. The $ Pb_{2} %$ Bi_{4} %$ T_{i5} %$ O_{18} $ films show a significant potential application for dielectric capacitors. Graphical abstract Aurivillius phase film (dpeaa)DE-He213 Annealing atmosphere (dpeaa)DE-He213 Energy density (dpeaa)DE-He213 Efficiency (dpeaa)DE-He213 Tong, Hai-Yun aut Lan, Shun aut Liu, Yi-Qian aut Dou, Lv-Ye aut Pan, Hao aut Lin, Yuan-Hua (orcid)0000-0002-5652-6701 aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 42(2023), 5 vom: 26. Feb., Seite 1465-1471 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:42 year:2023 number:5 day:26 month:02 pages:1465-1471 https://dx.doi.org/10.1007/s12598-022-02225-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 42 2023 5 26 02 1465-1471 |
| spelling |
10.1007/s12598-022-02225-5 doi (DE-627)SPR050139185 (SPR)s12598-022-02225-5-e DE-627 ger DE-627 rakwb eng Yang, Bing-Bing verfasserin aut Annealing atmosphere-dependent capacitive energy storage 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Youke Publishing Co.,Ltd 2023 Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report enhanced energy density and efficiency in the Aurivillius $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films by controlling the post-annealing atmosphere. The results demonstrate that the fabrication atmosphere has significant effects on the film texture and defects. As the increase of the oxygen pressure of annealing atmosphere, the $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films show a preferred growth orientation of (00l) and fewer defects, which leads to a higher polarization and breakdown field for the film annealed in air atmosphere and thus help to achieve an ultrahigh energy density of 59.4 J·$ cm^{−3} $ and an improved efficiency of 81.2%. Moreover, the film also exhibits excellent cycling reliability and good thermal stability. The $ Pb_{2} %$ Bi_{4} %$ T_{i5} %$ O_{18} $ films show a significant potential application for dielectric capacitors. Graphical abstract Aurivillius phase film (dpeaa)DE-He213 Annealing atmosphere (dpeaa)DE-He213 Energy density (dpeaa)DE-He213 Efficiency (dpeaa)DE-He213 Tong, Hai-Yun aut Lan, Shun aut Liu, Yi-Qian aut Dou, Lv-Ye aut Pan, Hao aut Lin, Yuan-Hua (orcid)0000-0002-5652-6701 aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 42(2023), 5 vom: 26. Feb., Seite 1465-1471 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:42 year:2023 number:5 day:26 month:02 pages:1465-1471 https://dx.doi.org/10.1007/s12598-022-02225-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 42 2023 5 26 02 1465-1471 |
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10.1007/s12598-022-02225-5 doi (DE-627)SPR050139185 (SPR)s12598-022-02225-5-e DE-627 ger DE-627 rakwb eng Yang, Bing-Bing verfasserin aut Annealing atmosphere-dependent capacitive energy storage 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Youke Publishing Co.,Ltd 2023 Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report enhanced energy density and efficiency in the Aurivillius $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films by controlling the post-annealing atmosphere. The results demonstrate that the fabrication atmosphere has significant effects on the film texture and defects. As the increase of the oxygen pressure of annealing atmosphere, the $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films show a preferred growth orientation of (00l) and fewer defects, which leads to a higher polarization and breakdown field for the film annealed in air atmosphere and thus help to achieve an ultrahigh energy density of 59.4 J·$ cm^{−3} $ and an improved efficiency of 81.2%. Moreover, the film also exhibits excellent cycling reliability and good thermal stability. The $ Pb_{2} %$ Bi_{4} %$ T_{i5} %$ O_{18} $ films show a significant potential application for dielectric capacitors. Graphical abstract Aurivillius phase film (dpeaa)DE-He213 Annealing atmosphere (dpeaa)DE-He213 Energy density (dpeaa)DE-He213 Efficiency (dpeaa)DE-He213 Tong, Hai-Yun aut Lan, Shun aut Liu, Yi-Qian aut Dou, Lv-Ye aut Pan, Hao aut Lin, Yuan-Hua (orcid)0000-0002-5652-6701 aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 42(2023), 5 vom: 26. Feb., Seite 1465-1471 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:42 year:2023 number:5 day:26 month:02 pages:1465-1471 https://dx.doi.org/10.1007/s12598-022-02225-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 42 2023 5 26 02 1465-1471 |
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10.1007/s12598-022-02225-5 doi (DE-627)SPR050139185 (SPR)s12598-022-02225-5-e DE-627 ger DE-627 rakwb eng Yang, Bing-Bing verfasserin aut Annealing atmosphere-dependent capacitive energy storage 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Youke Publishing Co.,Ltd 2023 Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report enhanced energy density and efficiency in the Aurivillius $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films by controlling the post-annealing atmosphere. The results demonstrate that the fabrication atmosphere has significant effects on the film texture and defects. As the increase of the oxygen pressure of annealing atmosphere, the $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films show a preferred growth orientation of (00l) and fewer defects, which leads to a higher polarization and breakdown field for the film annealed in air atmosphere and thus help to achieve an ultrahigh energy density of 59.4 J·$ cm^{−3} $ and an improved efficiency of 81.2%. Moreover, the film also exhibits excellent cycling reliability and good thermal stability. The $ Pb_{2} %$ Bi_{4} %$ T_{i5} %$ O_{18} $ films show a significant potential application for dielectric capacitors. Graphical abstract Aurivillius phase film (dpeaa)DE-He213 Annealing atmosphere (dpeaa)DE-He213 Energy density (dpeaa)DE-He213 Efficiency (dpeaa)DE-He213 Tong, Hai-Yun aut Lan, Shun aut Liu, Yi-Qian aut Dou, Lv-Ye aut Pan, Hao aut Lin, Yuan-Hua (orcid)0000-0002-5652-6701 aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 42(2023), 5 vom: 26. Feb., Seite 1465-1471 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:42 year:2023 number:5 day:26 month:02 pages:1465-1471 https://dx.doi.org/10.1007/s12598-022-02225-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 42 2023 5 26 02 1465-1471 |
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10.1007/s12598-022-02225-5 doi (DE-627)SPR050139185 (SPR)s12598-022-02225-5-e DE-627 ger DE-627 rakwb eng Yang, Bing-Bing verfasserin aut Annealing atmosphere-dependent capacitive energy storage 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Youke Publishing Co.,Ltd 2023 Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report enhanced energy density and efficiency in the Aurivillius $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films by controlling the post-annealing atmosphere. The results demonstrate that the fabrication atmosphere has significant effects on the film texture and defects. As the increase of the oxygen pressure of annealing atmosphere, the $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films show a preferred growth orientation of (00l) and fewer defects, which leads to a higher polarization and breakdown field for the film annealed in air atmosphere and thus help to achieve an ultrahigh energy density of 59.4 J·$ cm^{−3} $ and an improved efficiency of 81.2%. Moreover, the film also exhibits excellent cycling reliability and good thermal stability. The $ Pb_{2} %$ Bi_{4} %$ T_{i5} %$ O_{18} $ films show a significant potential application for dielectric capacitors. Graphical abstract Aurivillius phase film (dpeaa)DE-He213 Annealing atmosphere (dpeaa)DE-He213 Energy density (dpeaa)DE-He213 Efficiency (dpeaa)DE-He213 Tong, Hai-Yun aut Lan, Shun aut Liu, Yi-Qian aut Dou, Lv-Ye aut Pan, Hao aut Lin, Yuan-Hua (orcid)0000-0002-5652-6701 aut Enthalten in Rare metals Beijing : Yejin Gongye Chubanshe, 1989 42(2023), 5 vom: 26. Feb., Seite 1465-1471 (DE-627)513219307 (DE-600)2238702-X 1867-7185 nnns volume:42 year:2023 number:5 day:26 month:02 pages:1465-1471 https://dx.doi.org/10.1007/s12598-022-02225-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 42 2023 5 26 02 1465-1471 |
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Enthalten in Rare metals 42(2023), 5 vom: 26. Feb., Seite 1465-1471 volume:42 year:2023 number:5 day:26 month:02 pages:1465-1471 |
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Enthalten in Rare metals 42(2023), 5 vom: 26. Feb., Seite 1465-1471 volume:42 year:2023 number:5 day:26 month:02 pages:1465-1471 |
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Aurivillius phase film Annealing atmosphere Energy density Efficiency |
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Yang, Bing-Bing @@aut@@ Tong, Hai-Yun @@aut@@ Lan, Shun @@aut@@ Liu, Yi-Qian @@aut@@ Dou, Lv-Ye @@aut@@ Pan, Hao @@aut@@ Lin, Yuan-Hua @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">SPR050139185</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230422064740.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230422s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12598-022-02225-5</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR050139185</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s12598-022-02225-5-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yang, Bing-Bing</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Annealing atmosphere-dependent capacitive energy storage</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Youke Publishing Co.,Ltd 2023</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report enhanced energy density and efficiency in the Aurivillius $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films by controlling the post-annealing atmosphere. The results demonstrate that the fabrication atmosphere has significant effects on the film texture and defects. As the increase of the oxygen pressure of annealing atmosphere, the $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films show a preferred growth orientation of (00l) and fewer defects, which leads to a higher polarization and breakdown field for the film annealed in air atmosphere and thus help to achieve an ultrahigh energy density of 59.4 J·$ cm^{−3} $ and an improved efficiency of 81.2%. Moreover, the film also exhibits excellent cycling reliability and good thermal stability. The $ Pb_{2} %$ Bi_{4} %$ T_{i5} %$ O_{18} $ films show a significant potential application for dielectric capacitors. 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Yang, Bing-Bing |
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Yang, Bing-Bing misc Aurivillius phase film misc Annealing atmosphere misc Energy density misc Efficiency Annealing atmosphere-dependent capacitive energy storage |
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Annealing atmosphere-dependent capacitive energy storage Aurivillius phase film (dpeaa)DE-He213 Annealing atmosphere (dpeaa)DE-He213 Energy density (dpeaa)DE-He213 Efficiency (dpeaa)DE-He213 |
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misc Aurivillius phase film misc Annealing atmosphere misc Energy density misc Efficiency |
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Annealing atmosphere-dependent capacitive energy storage |
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Yang, Bing-Bing Tong, Hai-Yun Lan, Shun Liu, Yi-Qian Dou, Lv-Ye Pan, Hao Lin, Yuan-Hua |
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annealing atmosphere-dependent capacitive energy storage |
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Annealing atmosphere-dependent capacitive energy storage |
| abstract |
Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report enhanced energy density and efficiency in the Aurivillius $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films by controlling the post-annealing atmosphere. The results demonstrate that the fabrication atmosphere has significant effects on the film texture and defects. As the increase of the oxygen pressure of annealing atmosphere, the $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films show a preferred growth orientation of (00l) and fewer defects, which leads to a higher polarization and breakdown field for the film annealed in air atmosphere and thus help to achieve an ultrahigh energy density of 59.4 J·$ cm^{−3} $ and an improved efficiency of 81.2%. Moreover, the film also exhibits excellent cycling reliability and good thermal stability. The $ Pb_{2} %$ Bi_{4} %$ T_{i5} %$ O_{18} $ films show a significant potential application for dielectric capacitors. Graphical abstract © Youke Publishing Co.,Ltd 2023 |
| abstractGer |
Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report enhanced energy density and efficiency in the Aurivillius $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films by controlling the post-annealing atmosphere. The results demonstrate that the fabrication atmosphere has significant effects on the film texture and defects. As the increase of the oxygen pressure of annealing atmosphere, the $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films show a preferred growth orientation of (00l) and fewer defects, which leads to a higher polarization and breakdown field for the film annealed in air atmosphere and thus help to achieve an ultrahigh energy density of 59.4 J·$ cm^{−3} $ and an improved efficiency of 81.2%. Moreover, the film also exhibits excellent cycling reliability and good thermal stability. The $ Pb_{2} %$ Bi_{4} %$ T_{i5} %$ O_{18} $ films show a significant potential application for dielectric capacitors. Graphical abstract © Youke Publishing Co.,Ltd 2023 |
| abstract_unstemmed |
Electrostatic capacitors based on dielectrics with high energy density and efficiency are desired for modern electrical systems owing to their intrinsic fast charging-discharging speed and excellent reliability. The longstanding bottleneck is their relatively small energy density. Herein, we report enhanced energy density and efficiency in the Aurivillius $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films by controlling the post-annealing atmosphere. The results demonstrate that the fabrication atmosphere has significant effects on the film texture and defects. As the increase of the oxygen pressure of annealing atmosphere, the $ Pb_{2} %$ Bi_{4} %$ Ti_{5} %$ O_{18} $ films show a preferred growth orientation of (00l) and fewer defects, which leads to a higher polarization and breakdown field for the film annealed in air atmosphere and thus help to achieve an ultrahigh energy density of 59.4 J·$ cm^{−3} $ and an improved efficiency of 81.2%. Moreover, the film also exhibits excellent cycling reliability and good thermal stability. The $ Pb_{2} %$ Bi_{4} %$ T_{i5} %$ O_{18} $ films show a significant potential application for dielectric capacitors. Graphical abstract © Youke Publishing Co.,Ltd 2023 |
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Annealing atmosphere-dependent capacitive energy storage |
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Tong, Hai-Yun Lan, Shun Liu, Yi-Qian Dou, Lv-Ye Pan, Hao Lin, Yuan-Hua |
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Tong, Hai-Yun Lan, Shun Liu, Yi-Qian Dou, Lv-Ye Pan, Hao Lin, Yuan-Hua |
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10.1007/s12598-022-02225-5 |
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2024-07-03T13:38:09.526Z |
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| score |
7.40077 |