Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor
Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Baruah, Karabi [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Anmerkung: |
© Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
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| Übergeordnetes Werk: |
Enthalten in: Indian journal of physics - New Delhi : Springer India, 2009, 97(2022), 5 vom: 30. Okt., Seite 1473-1485 |
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| Übergeordnetes Werk: |
volume:97 ; year:2022 ; number:5 ; day:30 ; month:10 ; pages:1473-1485 |
| Links: |
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| DOI / URN: |
10.1007/s12648-022-02508-8 |
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| Katalog-ID: |
SPR050139541 |
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| LEADER | 01000naa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR050139541 | ||
| 003 | DE-627 | ||
| 005 | 20230422064741.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 230422s2022 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s12648-022-02508-8 |2 doi | |
| 035 | |a (DE-627)SPR050139541 | ||
| 035 | |a (SPR)s12648-022-02508-8-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Baruah, Karabi |e verfasserin |0 (orcid)0000-0002-1683-5876 |4 aut | |
| 245 | 1 | 0 | |a Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor |
| 264 | 1 | |c 2022 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a © Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. | ||
| 520 | |a Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies. | ||
| 650 | 4 | |a Band-to-band tunneling (BTBT) |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Diffusion noise |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Flicker noise |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Generation–recombination noise |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Interfacial trap charge |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Tunnel FET (TFET) |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Baishya, Srimanta |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Indian journal of physics |d New Delhi : Springer India, 2009 |g 97(2022), 5 vom: 30. Okt., Seite 1473-1485 |w (DE-627)606030921 |w (DE-600)2508021-0 |x 0974-9845 |7 nnns |
| 773 | 1 | 8 | |g volume:97 |g year:2022 |g number:5 |g day:30 |g month:10 |g pages:1473-1485 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s12648-022-02508-8 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_11 | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_22 | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_24 | ||
| 912 | |a GBV_ILN_31 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_39 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_60 | ||
| 912 | |a GBV_ILN_62 | ||
| 912 | |a GBV_ILN_63 | ||
| 912 | |a GBV_ILN_65 | ||
| 912 | |a GBV_ILN_69 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_73 | ||
| 912 | |a GBV_ILN_74 | ||
| 912 | |a GBV_ILN_90 | ||
| 912 | |a GBV_ILN_95 | ||
| 912 | |a GBV_ILN_100 | ||
| 912 | |a GBV_ILN_101 | ||
| 912 | |a GBV_ILN_105 | ||
| 912 | |a GBV_ILN_110 | ||
| 912 | |a GBV_ILN_120 | ||
| 912 | |a GBV_ILN_138 | ||
| 912 | |a GBV_ILN_150 | ||
| 912 | |a GBV_ILN_151 | ||
| 912 | |a GBV_ILN_152 | ||
| 912 | |a GBV_ILN_161 | ||
| 912 | |a GBV_ILN_170 | ||
| 912 | |a GBV_ILN_171 | ||
| 912 | |a GBV_ILN_187 | ||
| 912 | |a GBV_ILN_213 | ||
| 912 | |a GBV_ILN_224 | ||
| 912 | |a GBV_ILN_230 | ||
| 912 | |a GBV_ILN_250 | ||
| 912 | |a GBV_ILN_281 | ||
| 912 | |a GBV_ILN_285 | ||
| 912 | |a GBV_ILN_293 | ||
| 912 | |a GBV_ILN_370 | ||
| 912 | |a GBV_ILN_602 | ||
| 912 | |a GBV_ILN_636 | ||
| 912 | |a GBV_ILN_702 | ||
| 912 | |a GBV_ILN_2001 | ||
| 912 | |a GBV_ILN_2003 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2006 | ||
| 912 | |a GBV_ILN_2007 | ||
| 912 | |a GBV_ILN_2008 | ||
| 912 | |a GBV_ILN_2009 | ||
| 912 | |a GBV_ILN_2010 | ||
| 912 | |a GBV_ILN_2011 | ||
| 912 | |a GBV_ILN_2014 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_2021 | ||
| 912 | |a GBV_ILN_2025 | ||
| 912 | |a GBV_ILN_2026 | ||
| 912 | |a GBV_ILN_2027 | ||
| 912 | |a GBV_ILN_2031 | ||
| 912 | |a GBV_ILN_2034 | ||
| 912 | |a GBV_ILN_2037 | ||
| 912 | |a GBV_ILN_2038 | ||
| 912 | |a GBV_ILN_2039 | ||
| 912 | |a GBV_ILN_2044 | ||
| 912 | |a GBV_ILN_2048 | ||
| 912 | |a GBV_ILN_2049 | ||
| 912 | |a GBV_ILN_2050 | ||
| 912 | |a GBV_ILN_2055 | ||
| 912 | |a GBV_ILN_2056 | ||
| 912 | |a GBV_ILN_2057 | ||
| 912 | |a GBV_ILN_2059 | ||
| 912 | |a GBV_ILN_2061 | ||
| 912 | |a GBV_ILN_2064 | ||
| 912 | |a GBV_ILN_2065 | ||
| 912 | |a GBV_ILN_2068 | ||
| 912 | |a GBV_ILN_2088 | ||
| 912 | |a GBV_ILN_2093 | ||
| 912 | |a GBV_ILN_2106 | ||
| 912 | |a GBV_ILN_2107 | ||
| 912 | |a GBV_ILN_2108 | ||
| 912 | |a GBV_ILN_2110 | ||
| 912 | |a GBV_ILN_2111 | ||
| 912 | |a GBV_ILN_2112 | ||
| 912 | |a GBV_ILN_2113 | ||
| 912 | |a GBV_ILN_2118 | ||
| 912 | |a GBV_ILN_2122 | ||
| 912 | |a GBV_ILN_2129 | ||
| 912 | |a GBV_ILN_2143 | ||
| 912 | |a GBV_ILN_2144 | ||
| 912 | |a GBV_ILN_2147 | ||
| 912 | |a GBV_ILN_2148 | ||
| 912 | |a GBV_ILN_2152 | ||
| 912 | |a GBV_ILN_2153 | ||
| 912 | |a GBV_ILN_2188 | ||
| 912 | |a GBV_ILN_2190 | ||
| 912 | |a GBV_ILN_2232 | ||
| 912 | |a GBV_ILN_2336 | ||
| 912 | |a GBV_ILN_2446 | ||
| 912 | |a GBV_ILN_2470 | ||
| 912 | |a GBV_ILN_2472 | ||
| 912 | |a GBV_ILN_2507 | ||
| 912 | |a GBV_ILN_2522 | ||
| 912 | |a GBV_ILN_2548 | ||
| 912 | |a GBV_ILN_4035 | ||
| 912 | |a GBV_ILN_4037 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4112 | ||
| 912 | |a GBV_ILN_4125 | ||
| 912 | |a GBV_ILN_4126 | ||
| 912 | |a GBV_ILN_4242 | ||
| 912 | |a GBV_ILN_4246 | ||
| 912 | |a GBV_ILN_4249 | ||
| 912 | |a GBV_ILN_4251 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4306 | ||
| 912 | |a GBV_ILN_4307 | ||
| 912 | |a GBV_ILN_4313 | ||
| 912 | |a GBV_ILN_4322 | ||
| 912 | |a GBV_ILN_4323 | ||
| 912 | |a GBV_ILN_4324 | ||
| 912 | |a GBV_ILN_4325 | ||
| 912 | |a GBV_ILN_4326 | ||
| 912 | |a GBV_ILN_4328 | ||
| 912 | |a GBV_ILN_4333 | ||
| 912 | |a GBV_ILN_4334 | ||
| 912 | |a GBV_ILN_4335 | ||
| 912 | |a GBV_ILN_4336 | ||
| 912 | |a GBV_ILN_4338 | ||
| 912 | |a GBV_ILN_4393 | ||
| 912 | |a GBV_ILN_4700 | ||
| 951 | |a AR | ||
| 952 | |d 97 |j 2022 |e 5 |b 30 |c 10 |h 1473-1485 | ||
| author_variant |
k b kb s b sb |
|---|---|
| matchkey_str |
article:09749845:2022----::lcrclosigsucdulgtpptnefe |
| hierarchy_sort_str |
2022 |
| publishDate |
2022 |
| allfields |
10.1007/s12648-022-02508-8 doi (DE-627)SPR050139541 (SPR)s12648-022-02508-8-e DE-627 ger DE-627 rakwb eng Baruah, Karabi verfasserin (orcid)0000-0002-1683-5876 aut Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies. Band-to-band tunneling (BTBT) (dpeaa)DE-He213 Diffusion noise (dpeaa)DE-He213 Flicker noise (dpeaa)DE-He213 Generation–recombination noise (dpeaa)DE-He213 Interfacial trap charge (dpeaa)DE-He213 Tunnel FET (TFET) (dpeaa)DE-He213 Baishya, Srimanta aut Enthalten in Indian journal of physics New Delhi : Springer India, 2009 97(2022), 5 vom: 30. Okt., Seite 1473-1485 (DE-627)606030921 (DE-600)2508021-0 0974-9845 nnns volume:97 year:2022 number:5 day:30 month:10 pages:1473-1485 https://dx.doi.org/10.1007/s12648-022-02508-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 97 2022 5 30 10 1473-1485 |
| spelling |
10.1007/s12648-022-02508-8 doi (DE-627)SPR050139541 (SPR)s12648-022-02508-8-e DE-627 ger DE-627 rakwb eng Baruah, Karabi verfasserin (orcid)0000-0002-1683-5876 aut Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies. Band-to-band tunneling (BTBT) (dpeaa)DE-He213 Diffusion noise (dpeaa)DE-He213 Flicker noise (dpeaa)DE-He213 Generation–recombination noise (dpeaa)DE-He213 Interfacial trap charge (dpeaa)DE-He213 Tunnel FET (TFET) (dpeaa)DE-He213 Baishya, Srimanta aut Enthalten in Indian journal of physics New Delhi : Springer India, 2009 97(2022), 5 vom: 30. Okt., Seite 1473-1485 (DE-627)606030921 (DE-600)2508021-0 0974-9845 nnns volume:97 year:2022 number:5 day:30 month:10 pages:1473-1485 https://dx.doi.org/10.1007/s12648-022-02508-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 97 2022 5 30 10 1473-1485 |
| allfields_unstemmed |
10.1007/s12648-022-02508-8 doi (DE-627)SPR050139541 (SPR)s12648-022-02508-8-e DE-627 ger DE-627 rakwb eng Baruah, Karabi verfasserin (orcid)0000-0002-1683-5876 aut Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies. Band-to-band tunneling (BTBT) (dpeaa)DE-He213 Diffusion noise (dpeaa)DE-He213 Flicker noise (dpeaa)DE-He213 Generation–recombination noise (dpeaa)DE-He213 Interfacial trap charge (dpeaa)DE-He213 Tunnel FET (TFET) (dpeaa)DE-He213 Baishya, Srimanta aut Enthalten in Indian journal of physics New Delhi : Springer India, 2009 97(2022), 5 vom: 30. Okt., Seite 1473-1485 (DE-627)606030921 (DE-600)2508021-0 0974-9845 nnns volume:97 year:2022 number:5 day:30 month:10 pages:1473-1485 https://dx.doi.org/10.1007/s12648-022-02508-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 97 2022 5 30 10 1473-1485 |
| allfieldsGer |
10.1007/s12648-022-02508-8 doi (DE-627)SPR050139541 (SPR)s12648-022-02508-8-e DE-627 ger DE-627 rakwb eng Baruah, Karabi verfasserin (orcid)0000-0002-1683-5876 aut Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies. Band-to-band tunneling (BTBT) (dpeaa)DE-He213 Diffusion noise (dpeaa)DE-He213 Flicker noise (dpeaa)DE-He213 Generation–recombination noise (dpeaa)DE-He213 Interfacial trap charge (dpeaa)DE-He213 Tunnel FET (TFET) (dpeaa)DE-He213 Baishya, Srimanta aut Enthalten in Indian journal of physics New Delhi : Springer India, 2009 97(2022), 5 vom: 30. Okt., Seite 1473-1485 (DE-627)606030921 (DE-600)2508021-0 0974-9845 nnns volume:97 year:2022 number:5 day:30 month:10 pages:1473-1485 https://dx.doi.org/10.1007/s12648-022-02508-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 97 2022 5 30 10 1473-1485 |
| allfieldsSound |
10.1007/s12648-022-02508-8 doi (DE-627)SPR050139541 (SPR)s12648-022-02508-8-e DE-627 ger DE-627 rakwb eng Baruah, Karabi verfasserin (orcid)0000-0002-1683-5876 aut Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies. Band-to-band tunneling (BTBT) (dpeaa)DE-He213 Diffusion noise (dpeaa)DE-He213 Flicker noise (dpeaa)DE-He213 Generation–recombination noise (dpeaa)DE-He213 Interfacial trap charge (dpeaa)DE-He213 Tunnel FET (TFET) (dpeaa)DE-He213 Baishya, Srimanta aut Enthalten in Indian journal of physics New Delhi : Springer India, 2009 97(2022), 5 vom: 30. Okt., Seite 1473-1485 (DE-627)606030921 (DE-600)2508021-0 0974-9845 nnns volume:97 year:2022 number:5 day:30 month:10 pages:1473-1485 https://dx.doi.org/10.1007/s12648-022-02508-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 97 2022 5 30 10 1473-1485 |
| language |
English |
| source |
Enthalten in Indian journal of physics 97(2022), 5 vom: 30. Okt., Seite 1473-1485 volume:97 year:2022 number:5 day:30 month:10 pages:1473-1485 |
| sourceStr |
Enthalten in Indian journal of physics 97(2022), 5 vom: 30. Okt., Seite 1473-1485 volume:97 year:2022 number:5 day:30 month:10 pages:1473-1485 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Band-to-band tunneling (BTBT) Diffusion noise Flicker noise Generation–recombination noise Interfacial trap charge Tunnel FET (TFET) |
| isfreeaccess_bool |
false |
| container_title |
Indian journal of physics |
| authorswithroles_txt_mv |
Baruah, Karabi @@aut@@ Baishya, Srimanta @@aut@@ |
| publishDateDaySort_date |
2022-10-30T00:00:00Z |
| hierarchy_top_id |
606030921 |
| id |
SPR050139541 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">SPR050139541</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230422064741.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230422s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12648-022-02508-8</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR050139541</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s12648-022-02508-8-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Baruah, Karabi</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0002-1683-5876</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Band-to-band tunneling (BTBT)</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Diffusion noise</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Flicker noise</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Generation–recombination noise</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Interfacial trap charge</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Tunnel FET (TFET)</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Baishya, Srimanta</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Indian journal of physics</subfield><subfield code="d">New Delhi : Springer India, 2009</subfield><subfield code="g">97(2022), 5 vom: 30. Okt., Seite 1473-1485</subfield><subfield code="w">(DE-627)606030921</subfield><subfield code="w">(DE-600)2508021-0</subfield><subfield code="x">0974-9845</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:97</subfield><subfield code="g">year:2022</subfield><subfield code="g">number:5</subfield><subfield code="g">day:30</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:1473-1485</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s12648-022-02508-8</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_636</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2031</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2039</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2057</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2093</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2107</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2144</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2188</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2446</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2472</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2548</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4246</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4328</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">97</subfield><subfield code="j">2022</subfield><subfield code="e">5</subfield><subfield code="b">30</subfield><subfield code="c">10</subfield><subfield code="h">1473-1485</subfield></datafield></record></collection>
|
| author |
Baruah, Karabi |
| spellingShingle |
Baruah, Karabi misc Band-to-band tunneling (BTBT) misc Diffusion noise misc Flicker noise misc Generation–recombination noise misc Interfacial trap charge misc Tunnel FET (TFET) Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor |
| authorStr |
Baruah, Karabi |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)606030921 |
| format |
electronic Article |
| delete_txt_mv |
keep |
| author_role |
aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
0974-9845 |
| topic_title |
Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor Band-to-band tunneling (BTBT) (dpeaa)DE-He213 Diffusion noise (dpeaa)DE-He213 Flicker noise (dpeaa)DE-He213 Generation–recombination noise (dpeaa)DE-He213 Interfacial trap charge (dpeaa)DE-He213 Tunnel FET (TFET) (dpeaa)DE-He213 |
| topic |
misc Band-to-band tunneling (BTBT) misc Diffusion noise misc Flicker noise misc Generation–recombination noise misc Interfacial trap charge misc Tunnel FET (TFET) |
| topic_unstemmed |
misc Band-to-band tunneling (BTBT) misc Diffusion noise misc Flicker noise misc Generation–recombination noise misc Interfacial trap charge misc Tunnel FET (TFET) |
| topic_browse |
misc Band-to-band tunneling (BTBT) misc Diffusion noise misc Flicker noise misc Generation–recombination noise misc Interfacial trap charge misc Tunnel FET (TFET) |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
Indian journal of physics |
| hierarchy_parent_id |
606030921 |
| hierarchy_top_title |
Indian journal of physics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)606030921 (DE-600)2508021-0 |
| title |
Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor |
| ctrlnum |
(DE-627)SPR050139541 (SPR)s12648-022-02508-8-e |
| title_full |
Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor |
| author_sort |
Baruah, Karabi |
| journal |
Indian journal of physics |
| journalStr |
Indian journal of physics |
| lang_code |
eng |
| isOA_bool |
false |
| recordtype |
marc |
| publishDateSort |
2022 |
| contenttype_str_mv |
txt |
| container_start_page |
1473 |
| author_browse |
Baruah, Karabi Baishya, Srimanta |
| container_volume |
97 |
| format_se |
Elektronische Aufsätze |
| author-letter |
Baruah, Karabi |
| doi_str_mv |
10.1007/s12648-022-02508-8 |
| normlink |
(ORCID)0000-0002-1683-5876 |
| normlink_prefix_str_mv |
(orcid)0000-0002-1683-5876 |
| title_sort |
electrical noise in ge-source double-gate pnpn tunnel field effect transistor |
| title_auth |
Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor |
| abstract |
Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies. © Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| abstractGer |
Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies. © Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| abstract_unstemmed |
Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies. © Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 |
| container_issue |
5 |
| title_short |
Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor |
| url |
https://dx.doi.org/10.1007/s12648-022-02508-8 |
| remote_bool |
true |
| author2 |
Baishya, Srimanta |
| author2Str |
Baishya, Srimanta |
| ppnlink |
606030921 |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s12648-022-02508-8 |
| up_date |
2024-07-03T13:38:18.369Z |
| _version_ |
1803565293508755456 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">SPR050139541</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230422064741.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230422s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12648-022-02508-8</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR050139541</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s12648-022-02508-8-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Baruah, Karabi</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0002-1683-5876</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrical noise in Ge-source double-gate PNPN tunnel field effect transistor</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Indian Association for the Cultivation of Science 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The noise behavior of a proposed Ge-source counter-doped pocket-based double-gate tunnel FET (GS-PNPN-TFET) in the presence and absence of interfacial trap charge conditions is presented. The noise behavior was studied in terms of drain current noise power spectral density (Sid, unit $ A^{2} $/Hz) and gate voltage electron noise power spectral density (Svgee, unit $ V^{2} $/Hz) against variation of various device parameters, viz., body thickness (Tsi), pocket length (Lp), gate-oxide thickness (Tox), gate-oxide material, mole fraction, and doping density using Sentaurus TCAD software. Oxide–semiconductor interfacial trap charge of Gaussian distribution was used at two frequencies − 1 MHz and 10 GHz. Our analysis also includes the impact of temperature variation on noise. As per our findings, the noise spectrums are comparable for the presence and absence of interfacial trap charges in the proposed TFET. This is because the noise spectrum depends on on-current (ION) and the ION is negligibly influenced by the interfacial trap charges in the proposed TFET. However, off-current (IOFF) degrades when trap charges are present at the interface. In comparison with other FET devices, the proposed device offers improved Sid and Svgee values of roughly 1.82 × $ 10^{–29} $ $ A^{2} $/Hz and 5.5 × $ 10^{–20} $ $ V^{2} $/Hz, respectively, at 10 GHz frequency. Furthermore, the diffusion noise predominates at higher frequencies, while the generation–recombination noise is found to be dominant at low frequencies, as expected. Flicker noise is most noticeable at low and medium frequencies but fades away at higher frequencies.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Band-to-band tunneling (BTBT)</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Diffusion noise</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Flicker noise</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Generation–recombination noise</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Interfacial trap charge</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Tunnel FET (TFET)</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Baishya, Srimanta</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Indian journal of physics</subfield><subfield code="d">New Delhi : Springer India, 2009</subfield><subfield code="g">97(2022), 5 vom: 30. Okt., Seite 1473-1485</subfield><subfield code="w">(DE-627)606030921</subfield><subfield code="w">(DE-600)2508021-0</subfield><subfield code="x">0974-9845</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:97</subfield><subfield code="g">year:2022</subfield><subfield code="g">number:5</subfield><subfield code="g">day:30</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:1473-1485</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s12648-022-02508-8</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_636</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2031</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2039</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2057</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2093</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2107</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2144</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2188</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2446</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2472</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2548</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4246</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4328</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">97</subfield><subfield code="j">2022</subfield><subfield code="e">5</subfield><subfield code="b">30</subfield><subfield code="c">10</subfield><subfield code="h">1473-1485</subfield></datafield></record></collection>
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| score |
7.4020357 |