Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $

Abstract Herein, we reported the effect of thermal annealing on the $ ZnFe_{2} %$ O_{4} $ film and substrate/film interface. These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm,...
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Gespeichert in:

Autor*in:	Singh, Jitendra Pal [verfasserIn] Nandy, Subhajit Kim, So Hee Lim, Weon Cheol Lee, Sangsul Chae, Keun Hwa

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	Zinc Ferrite HRTEM NEXAFS Hybridization

Anmerkung:	© King Abdulaziz City for Science and Technology 2021

Übergeordnetes Werk:	Enthalten in: Applied nanoscience - Berlin : Springer, 2011, 13(2022), 5 vom: 03. Feb., Seite 3233-3244
Übergeordnetes Werk:	volume:13 ; year:2022 ; number:5 ; day:03 ; month:02 ; pages:3233-3244

Links:	Volltext

DOI / URN:	10.1007/s13204-021-02129-3

Katalog-ID:	SPR05018573X

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520			\|a Abstract Herein, we reported the effect of thermal annealing on the $ ZnFe_{2} %$ O_{4} $ film and substrate/film interface. These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm, which was observed to decrease with annealing due to the increase of film/substrate interface as determined from high-resolution electron microscopy (HRTEM). Zn K-edge X-ray absorption near edge structure (XANES) spectrum exhibits spectral features at 600 °C that are characteristics of $ ZnFe_{2} %$ O_{4} $. Annealing modulated the metal–oxygen hybridization process in these films as evidenced from the pre-edge region of O K-edge spectra. Selected area diffraction further envisages changes in the crystalline nature of films and interface regions.
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650		4	\|a Hybridization \|7 (dpeaa)DE-He213
700	1		\|a Nandy, Subhajit \|4 aut
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700	1		\|a Chae, Keun Hwa \|4 aut
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912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
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912			\|a GBV_ILN_250
912			\|a GBV_ILN_266
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
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912			\|a GBV_ILN_602
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912			\|a GBV_ILN_702
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912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
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912			\|a GBV_ILN_2031
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912			\|a GBV_ILN_2039
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allfields	10.1007/s13204-021-02129-3 doi (DE-627)SPR05018573X (SPR)s13204-021-02129-3-e DE-627 ger DE-627 rakwb eng Singh, Jitendra Pal verfasserin aut Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $ 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © King Abdulaziz City for Science and Technology 2021 Abstract Herein, we reported the effect of thermal annealing on the $ ZnFe_{2} %$ O_{4} $ film and substrate/film interface. These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm, which was observed to decrease with annealing due to the increase of film/substrate interface as determined from high-resolution electron microscopy (HRTEM). Zn K-edge X-ray absorption near edge structure (XANES) spectrum exhibits spectral features at 600 °C that are characteristics of $ ZnFe_{2} %$ O_{4} $. Annealing modulated the metal–oxygen hybridization process in these films as evidenced from the pre-edge region of O K-edge spectra. Selected area diffraction further envisages changes in the crystalline nature of films and interface regions. Zinc Ferrite (dpeaa)DE-He213 HRTEM (dpeaa)DE-He213 NEXAFS (dpeaa)DE-He213 Hybridization (dpeaa)DE-He213 Nandy, Subhajit aut Kim, So Hee aut Lim, Weon Cheol aut Lee, Sangsul aut Chae, Keun Hwa aut Enthalten in Applied nanoscience Berlin : Springer, 2011 13(2022), 5 vom: 03. Feb., Seite 3233-3244 (DE-627)658009001 (DE-600)2607723-1 2190-5517 nnns volume:13 year:2022 number:5 day:03 month:02 pages:3233-3244 https://dx.doi.org/10.1007/s13204-021-02129-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 13 2022 5 03 02 3233-3244
spelling	10.1007/s13204-021-02129-3 doi (DE-627)SPR05018573X (SPR)s13204-021-02129-3-e DE-627 ger DE-627 rakwb eng Singh, Jitendra Pal verfasserin aut Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $ 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © King Abdulaziz City for Science and Technology 2021 Abstract Herein, we reported the effect of thermal annealing on the $ ZnFe_{2} %$ O_{4} $ film and substrate/film interface. These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm, which was observed to decrease with annealing due to the increase of film/substrate interface as determined from high-resolution electron microscopy (HRTEM). Zn K-edge X-ray absorption near edge structure (XANES) spectrum exhibits spectral features at 600 °C that are characteristics of $ ZnFe_{2} %$ O_{4} $. Annealing modulated the metal–oxygen hybridization process in these films as evidenced from the pre-edge region of O K-edge spectra. Selected area diffraction further envisages changes in the crystalline nature of films and interface regions. Zinc Ferrite (dpeaa)DE-He213 HRTEM (dpeaa)DE-He213 NEXAFS (dpeaa)DE-He213 Hybridization (dpeaa)DE-He213 Nandy, Subhajit aut Kim, So Hee aut Lim, Weon Cheol aut Lee, Sangsul aut Chae, Keun Hwa aut Enthalten in Applied nanoscience Berlin : Springer, 2011 13(2022), 5 vom: 03. Feb., Seite 3233-3244 (DE-627)658009001 (DE-600)2607723-1 2190-5517 nnns volume:13 year:2022 number:5 day:03 month:02 pages:3233-3244 https://dx.doi.org/10.1007/s13204-021-02129-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 13 2022 5 03 02 3233-3244
allfields_unstemmed	10.1007/s13204-021-02129-3 doi (DE-627)SPR05018573X (SPR)s13204-021-02129-3-e DE-627 ger DE-627 rakwb eng Singh, Jitendra Pal verfasserin aut Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $ 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © King Abdulaziz City for Science and Technology 2021 Abstract Herein, we reported the effect of thermal annealing on the $ ZnFe_{2} %$ O_{4} $ film and substrate/film interface. These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm, which was observed to decrease with annealing due to the increase of film/substrate interface as determined from high-resolution electron microscopy (HRTEM). Zn K-edge X-ray absorption near edge structure (XANES) spectrum exhibits spectral features at 600 °C that are characteristics of $ ZnFe_{2} %$ O_{4} $. Annealing modulated the metal–oxygen hybridization process in these films as evidenced from the pre-edge region of O K-edge spectra. Selected area diffraction further envisages changes in the crystalline nature of films and interface regions. Zinc Ferrite (dpeaa)DE-He213 HRTEM (dpeaa)DE-He213 NEXAFS (dpeaa)DE-He213 Hybridization (dpeaa)DE-He213 Nandy, Subhajit aut Kim, So Hee aut Lim, Weon Cheol aut Lee, Sangsul aut Chae, Keun Hwa aut Enthalten in Applied nanoscience Berlin : Springer, 2011 13(2022), 5 vom: 03. Feb., Seite 3233-3244 (DE-627)658009001 (DE-600)2607723-1 2190-5517 nnns volume:13 year:2022 number:5 day:03 month:02 pages:3233-3244 https://dx.doi.org/10.1007/s13204-021-02129-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 13 2022 5 03 02 3233-3244
allfieldsGer	10.1007/s13204-021-02129-3 doi (DE-627)SPR05018573X (SPR)s13204-021-02129-3-e DE-627 ger DE-627 rakwb eng Singh, Jitendra Pal verfasserin aut Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $ 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © King Abdulaziz City for Science and Technology 2021 Abstract Herein, we reported the effect of thermal annealing on the $ ZnFe_{2} %$ O_{4} $ film and substrate/film interface. These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm, which was observed to decrease with annealing due to the increase of film/substrate interface as determined from high-resolution electron microscopy (HRTEM). Zn K-edge X-ray absorption near edge structure (XANES) spectrum exhibits spectral features at 600 °C that are characteristics of $ ZnFe_{2} %$ O_{4} $. Annealing modulated the metal–oxygen hybridization process in these films as evidenced from the pre-edge region of O K-edge spectra. Selected area diffraction further envisages changes in the crystalline nature of films and interface regions. Zinc Ferrite (dpeaa)DE-He213 HRTEM (dpeaa)DE-He213 NEXAFS (dpeaa)DE-He213 Hybridization (dpeaa)DE-He213 Nandy, Subhajit aut Kim, So Hee aut Lim, Weon Cheol aut Lee, Sangsul aut Chae, Keun Hwa aut Enthalten in Applied nanoscience Berlin : Springer, 2011 13(2022), 5 vom: 03. Feb., Seite 3233-3244 (DE-627)658009001 (DE-600)2607723-1 2190-5517 nnns volume:13 year:2022 number:5 day:03 month:02 pages:3233-3244 https://dx.doi.org/10.1007/s13204-021-02129-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 13 2022 5 03 02 3233-3244
allfieldsSound	10.1007/s13204-021-02129-3 doi (DE-627)SPR05018573X (SPR)s13204-021-02129-3-e DE-627 ger DE-627 rakwb eng Singh, Jitendra Pal verfasserin aut Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $ 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © King Abdulaziz City for Science and Technology 2021 Abstract Herein, we reported the effect of thermal annealing on the $ ZnFe_{2} %$ O_{4} $ film and substrate/film interface. These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm, which was observed to decrease with annealing due to the increase of film/substrate interface as determined from high-resolution electron microscopy (HRTEM). Zn K-edge X-ray absorption near edge structure (XANES) spectrum exhibits spectral features at 600 °C that are characteristics of $ ZnFe_{2} %$ O_{4} $. Annealing modulated the metal–oxygen hybridization process in these films as evidenced from the pre-edge region of O K-edge spectra. Selected area diffraction further envisages changes in the crystalline nature of films and interface regions. Zinc Ferrite (dpeaa)DE-He213 HRTEM (dpeaa)DE-He213 NEXAFS (dpeaa)DE-He213 Hybridization (dpeaa)DE-He213 Nandy, Subhajit aut Kim, So Hee aut Lim, Weon Cheol aut Lee, Sangsul aut Chae, Keun Hwa aut Enthalten in Applied nanoscience Berlin : Springer, 2011 13(2022), 5 vom: 03. Feb., Seite 3233-3244 (DE-627)658009001 (DE-600)2607723-1 2190-5517 nnns volume:13 year:2022 number:5 day:03 month:02 pages:3233-3244 https://dx.doi.org/10.1007/s13204-021-02129-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 13 2022 5 03 02 3233-3244
language	English
source	Enthalten in Applied nanoscience 13(2022), 5 vom: 03. Feb., Seite 3233-3244 volume:13 year:2022 number:5 day:03 month:02 pages:3233-3244
sourceStr	Enthalten in Applied nanoscience 13(2022), 5 vom: 03. Feb., Seite 3233-3244 volume:13 year:2022 number:5 day:03 month:02 pages:3233-3244
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Zinc Ferrite HRTEM NEXAFS Hybridization
isfreeaccess_bool	false
container_title	Applied nanoscience
authorswithroles_txt_mv	Singh, Jitendra Pal @@aut@@ Nandy, Subhajit @@aut@@ Kim, So Hee @@aut@@ Lim, Weon Cheol @@aut@@ Lee, Sangsul @@aut@@ Chae, Keun Hwa @@aut@@
publishDateDaySort_date	2022-02-03T00:00:00Z
hierarchy_top_id	658009001
id	SPR05018573X
language_de	englisch
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These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm, which was observed to decrease with annealing due to the increase of film/substrate interface as determined from high-resolution electron microscopy (HRTEM). Zn K-edge X-ray absorption near edge structure (XANES) spectrum exhibits spectral features at 600 °C that are characteristics of $ ZnFe_{2} %$ O_{4} $. Annealing modulated the metal–oxygen hybridization process in these films as evidenced from the pre-edge region of O K-edge spectra. Selected area diffraction further envisages changes in the crystalline nature of films and interface regions.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Zinc Ferrite</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">HRTEM</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">NEXAFS</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Hybridization</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nandy, Subhajit</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, So Hee</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lim, Weon Cheol</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, Sangsul</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chae, Keun Hwa</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied nanoscience</subfield><subfield code="d">Berlin : Springer, 2011</subfield><subfield code="g">13(2022), 5 vom: 03. 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author	Singh, Jitendra Pal
spellingShingle	Singh, Jitendra Pal misc Zinc Ferrite misc HRTEM misc NEXAFS misc Hybridization Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $
authorStr	Singh, Jitendra Pal
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topic_title	Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $ Zinc Ferrite (dpeaa)DE-He213 HRTEM (dpeaa)DE-He213 NEXAFS (dpeaa)DE-He213 Hybridization (dpeaa)DE-He213
topic	misc Zinc Ferrite misc HRTEM misc NEXAFS misc Hybridization
topic_unstemmed	misc Zinc Ferrite misc HRTEM misc NEXAFS misc Hybridization
topic_browse	misc Zinc Ferrite misc HRTEM misc NEXAFS misc Hybridization
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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hierarchy_parent_title	Applied nanoscience
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title	Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $
ctrlnum	(DE-627)SPR05018573X (SPR)s13204-021-02129-3-e
title_full	Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $
author_sort	Singh, Jitendra Pal
journal	Applied nanoscience
journalStr	Applied nanoscience
lang_code	eng
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publishDateSort	2022
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container_start_page	3233
author_browse	Singh, Jitendra Pal Nandy, Subhajit Kim, So Hee Lim, Weon Cheol Lee, Sangsul Chae, Keun Hwa
container_volume	13
format_se	Elektronische Aufsätze
author-letter	Singh, Jitendra Pal
doi_str_mv	10.1007/s13204-021-02129-3
title_sort	effect of thermal annealing on the film and substrate/film interface: the case of $ znfe_{2} %$ o_{4} $
title_auth	Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $
abstract	Abstract Herein, we reported the effect of thermal annealing on the $ ZnFe_{2} %$ O_{4} $ film and substrate/film interface. These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm, which was observed to decrease with annealing due to the increase of film/substrate interface as determined from high-resolution electron microscopy (HRTEM). Zn K-edge X-ray absorption near edge structure (XANES) spectrum exhibits spectral features at 600 °C that are characteristics of $ ZnFe_{2} %$ O_{4} $. Annealing modulated the metal–oxygen hybridization process in these films as evidenced from the pre-edge region of O K-edge spectra. Selected area diffraction further envisages changes in the crystalline nature of films and interface regions. © King Abdulaziz City for Science and Technology 2021
abstractGer	Abstract Herein, we reported the effect of thermal annealing on the $ ZnFe_{2} %$ O_{4} $ film and substrate/film interface. These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm, which was observed to decrease with annealing due to the increase of film/substrate interface as determined from high-resolution electron microscopy (HRTEM). Zn K-edge X-ray absorption near edge structure (XANES) spectrum exhibits spectral features at 600 °C that are characteristics of $ ZnFe_{2} %$ O_{4} $. Annealing modulated the metal–oxygen hybridization process in these films as evidenced from the pre-edge region of O K-edge spectra. Selected area diffraction further envisages changes in the crystalline nature of films and interface regions. © King Abdulaziz City for Science and Technology 2021
abstract_unstemmed	Abstract Herein, we reported the effect of thermal annealing on the $ ZnFe_{2} %$ O_{4} $ film and substrate/film interface. These films were grown on MgO(200) substrate using radio frequency sputtering and were further annealed at 200, 400, and 600 °C. The thickness of the as-grown film was 109 nm, which was observed to decrease with annealing due to the increase of film/substrate interface as determined from high-resolution electron microscopy (HRTEM). Zn K-edge X-ray absorption near edge structure (XANES) spectrum exhibits spectral features at 600 °C that are characteristics of $ ZnFe_{2} %$ O_{4} $. Annealing modulated the metal–oxygen hybridization process in these films as evidenced from the pre-edge region of O K-edge spectra. Selected area diffraction further envisages changes in the crystalline nature of films and interface regions. © King Abdulaziz City for Science and Technology 2021
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container_issue	5
title_short	Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $
url	https://dx.doi.org/10.1007/s13204-021-02129-3
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author2	Nandy, Subhajit Kim, So Hee Lim, Weon Cheol Lee, Sangsul Chae, Keun Hwa
author2Str	Nandy, Subhajit Kim, So Hee Lim, Weon Cheol Lee, Sangsul Chae, Keun Hwa
ppnlink	658009001
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doi_str	10.1007/s13204-021-02129-3
up_date	2024-07-03T13:55:24.322Z
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Effect of thermal annealing on the film and substrate/film interface: the case of $ ZnFe_{2} %$ O_{4} $

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