Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate

Abstract Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light pow...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Hu, Jiahui [verfasserIn] Wu, Feng Dai, Jiangnan Chen, Changqing

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	light-emitting diode (LED) sputtered aluminum nitride (AlN) physical vapor deposition (PVD) metal-organic chemical vapor deposition (MOCVD)

Anmerkung:	© Higher Education Press 2021

Übergeordnetes Werk:	Enthalten in: Frontiers of optoelectronics in China - [Beijing] : Higher Education Press, 2008, 14(2021), 4 vom: 07. Juni, Seite 507-512
Übergeordnetes Werk:	volume:14 ; year:2021 ; number:4 ; day:07 ; month:06 ; pages:507-512

Links:	Volltext

DOI / URN:	10.1007/s12200-021-1216-2

Katalog-ID:	SPR050378376

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allfields	10.1007/s12200-021-1216-2 doi (DE-627)SPR050378376 (SPR)s12200-021-1216-2-e DE-627 ger DE-627 rakwb eng Hu, Jiahui verfasserin aut Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Higher Education Press 2021 Abstract Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-V operating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM. light-emitting diode (LED) (dpeaa)DE-He213 sputtered aluminum nitride (AlN) (dpeaa)DE-He213 physical vapor deposition (PVD) (dpeaa)DE-He213 metal-organic chemical vapor deposition (MOCVD) (dpeaa)DE-He213 Wu, Feng aut Dai, Jiangnan aut Chen, Changqing aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 14(2021), 4 vom: 07. Juni, Seite 507-512 (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:14 year:2021 number:4 day:07 month:06 pages:507-512 https://dx.doi.org/10.1007/s12200-021-1216-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 14 2021 4 07 06 507-512
spelling	10.1007/s12200-021-1216-2 doi (DE-627)SPR050378376 (SPR)s12200-021-1216-2-e DE-627 ger DE-627 rakwb eng Hu, Jiahui verfasserin aut Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Higher Education Press 2021 Abstract Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-V operating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM. light-emitting diode (LED) (dpeaa)DE-He213 sputtered aluminum nitride (AlN) (dpeaa)DE-He213 physical vapor deposition (PVD) (dpeaa)DE-He213 metal-organic chemical vapor deposition (MOCVD) (dpeaa)DE-He213 Wu, Feng aut Dai, Jiangnan aut Chen, Changqing aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 14(2021), 4 vom: 07. Juni, Seite 507-512 (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:14 year:2021 number:4 day:07 month:06 pages:507-512 https://dx.doi.org/10.1007/s12200-021-1216-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 14 2021 4 07 06 507-512
allfields_unstemmed	10.1007/s12200-021-1216-2 doi (DE-627)SPR050378376 (SPR)s12200-021-1216-2-e DE-627 ger DE-627 rakwb eng Hu, Jiahui verfasserin aut Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Higher Education Press 2021 Abstract Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-V operating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM. light-emitting diode (LED) (dpeaa)DE-He213 sputtered aluminum nitride (AlN) (dpeaa)DE-He213 physical vapor deposition (PVD) (dpeaa)DE-He213 metal-organic chemical vapor deposition (MOCVD) (dpeaa)DE-He213 Wu, Feng aut Dai, Jiangnan aut Chen, Changqing aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 14(2021), 4 vom: 07. Juni, Seite 507-512 (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:14 year:2021 number:4 day:07 month:06 pages:507-512 https://dx.doi.org/10.1007/s12200-021-1216-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 14 2021 4 07 06 507-512
allfieldsGer	10.1007/s12200-021-1216-2 doi (DE-627)SPR050378376 (SPR)s12200-021-1216-2-e DE-627 ger DE-627 rakwb eng Hu, Jiahui verfasserin aut Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Higher Education Press 2021 Abstract Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-V operating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM. light-emitting diode (LED) (dpeaa)DE-He213 sputtered aluminum nitride (AlN) (dpeaa)DE-He213 physical vapor deposition (PVD) (dpeaa)DE-He213 metal-organic chemical vapor deposition (MOCVD) (dpeaa)DE-He213 Wu, Feng aut Dai, Jiangnan aut Chen, Changqing aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 14(2021), 4 vom: 07. Juni, Seite 507-512 (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:14 year:2021 number:4 day:07 month:06 pages:507-512 https://dx.doi.org/10.1007/s12200-021-1216-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 14 2021 4 07 06 507-512
allfieldsSound	10.1007/s12200-021-1216-2 doi (DE-627)SPR050378376 (SPR)s12200-021-1216-2-e DE-627 ger DE-627 rakwb eng Hu, Jiahui verfasserin aut Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Higher Education Press 2021 Abstract Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-V operating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM. light-emitting diode (LED) (dpeaa)DE-He213 sputtered aluminum nitride (AlN) (dpeaa)DE-He213 physical vapor deposition (PVD) (dpeaa)DE-He213 metal-organic chemical vapor deposition (MOCVD) (dpeaa)DE-He213 Wu, Feng aut Dai, Jiangnan aut Chen, Changqing aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 14(2021), 4 vom: 07. Juni, Seite 507-512 (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:14 year:2021 number:4 day:07 month:06 pages:507-512 https://dx.doi.org/10.1007/s12200-021-1216-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 14 2021 4 07 06 507-512
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author	Hu, Jiahui
spellingShingle	Hu, Jiahui misc light-emitting diode (LED) misc sputtered aluminum nitride (AlN) misc physical vapor deposition (PVD) misc metal-organic chemical vapor deposition (MOCVD) Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate
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topic_title	Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate light-emitting diode (LED) (dpeaa)DE-He213 sputtered aluminum nitride (AlN) (dpeaa)DE-He213 physical vapor deposition (PVD) (dpeaa)DE-He213 metal-organic chemical vapor deposition (MOCVD) (dpeaa)DE-He213
topic	misc light-emitting diode (LED) misc sputtered aluminum nitride (AlN) misc physical vapor deposition (PVD) misc metal-organic chemical vapor deposition (MOCVD)
topic_unstemmed	misc light-emitting diode (LED) misc sputtered aluminum nitride (AlN) misc physical vapor deposition (PVD) misc metal-organic chemical vapor deposition (MOCVD)
topic_browse	misc light-emitting diode (LED) misc sputtered aluminum nitride (AlN) misc physical vapor deposition (PVD) misc metal-organic chemical vapor deposition (MOCVD)
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title	Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate
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title_full	Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate
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doi_str_mv	10.1007/s12200-021-1216-2
title_sort	growth of ingan-based blue-led on aln/sapphire sputtered with different oxygen flow rate
title_auth	Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate
abstract	Abstract Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-V operating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM. © Higher Education Press 2021
abstractGer	Abstract Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-V operating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM. © Higher Education Press 2021
abstract_unstemmed	Abstract Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-V operating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM. © Higher Education Press 2021
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title_short	Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate
url	https://dx.doi.org/10.1007/s12200-021-1216-2
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up_date	2024-07-03T15:09:30.646Z
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Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate

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