Exciton States in ZnO/MgZnO Quantum Wells under Electric Field and Magnetic Field
Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material compo...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Cao, X. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1137–1144. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. |
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| Übergeordnetes Werk: |
Enthalten in: Physics of the solid state - College Park, Md. : Inst., 1997, 63(2021), 8 vom: Aug., Seite 1137-1144 |
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| Übergeordnetes Werk: |
volume:63 ; year:2021 ; number:8 ; month:08 ; pages:1137-1144 |
| Links: |
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| DOI / URN: |
10.1134/S1063783421080059 |
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| Katalog-ID: |
SPR050572830 |
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| 520 | |a Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. The exciton binding energy decreases with the increase of electric field but increases with the increase of magnetic field. The combined effects of axial electric field and transverse magnetic field on the binding energy indicate that they can compensate each other. In addition, the uncorrelated probability is investigated in the quantum well under the electric and magnetic fields. | ||
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| 700 | 1 | |a Hu, M. |4 aut | |
| 700 | 1 | |a Jia, Z. |4 aut | |
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10.1134/S1063783421080059 doi (DE-627)SPR050572830 (SPR)S1063783421080059-e DE-627 ger DE-627 rakwb eng Cao, X. verfasserin aut Exciton States in ZnO/MgZnO Quantum Wells under Electric Field and Magnetic Field 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1137–1144. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. The exciton binding energy decreases with the increase of electric field but increases with the increase of magnetic field. The combined effects of axial electric field and transverse magnetic field on the binding energy indicate that they can compensate each other. In addition, the uncorrelated probability is investigated in the quantum well under the electric and magnetic fields. Wang, H. aut Hu, M. aut Jia, Z. aut Enthalten in Physics of the solid state College Park, Md. : Inst., 1997 63(2021), 8 vom: Aug., Seite 1137-1144 (DE-627)269017275 (DE-600)1473624-X 1090-6460 nnns volume:63 year:2021 number:8 month:08 pages:1137-1144 https://dx.doi.org/10.1134/S1063783421080059 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 63 2021 8 08 1137-1144 |
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10.1134/S1063783421080059 doi (DE-627)SPR050572830 (SPR)S1063783421080059-e DE-627 ger DE-627 rakwb eng Cao, X. verfasserin aut Exciton States in ZnO/MgZnO Quantum Wells under Electric Field and Magnetic Field 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1137–1144. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. The exciton binding energy decreases with the increase of electric field but increases with the increase of magnetic field. The combined effects of axial electric field and transverse magnetic field on the binding energy indicate that they can compensate each other. In addition, the uncorrelated probability is investigated in the quantum well under the electric and magnetic fields. Wang, H. aut Hu, M. aut Jia, Z. aut Enthalten in Physics of the solid state College Park, Md. : Inst., 1997 63(2021), 8 vom: Aug., Seite 1137-1144 (DE-627)269017275 (DE-600)1473624-X 1090-6460 nnns volume:63 year:2021 number:8 month:08 pages:1137-1144 https://dx.doi.org/10.1134/S1063783421080059 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 63 2021 8 08 1137-1144 |
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10.1134/S1063783421080059 doi (DE-627)SPR050572830 (SPR)S1063783421080059-e DE-627 ger DE-627 rakwb eng Cao, X. verfasserin aut Exciton States in ZnO/MgZnO Quantum Wells under Electric Field and Magnetic Field 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1137–1144. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. The exciton binding energy decreases with the increase of electric field but increases with the increase of magnetic field. The combined effects of axial electric field and transverse magnetic field on the binding energy indicate that they can compensate each other. In addition, the uncorrelated probability is investigated in the quantum well under the electric and magnetic fields. Wang, H. aut Hu, M. aut Jia, Z. aut Enthalten in Physics of the solid state College Park, Md. : Inst., 1997 63(2021), 8 vom: Aug., Seite 1137-1144 (DE-627)269017275 (DE-600)1473624-X 1090-6460 nnns volume:63 year:2021 number:8 month:08 pages:1137-1144 https://dx.doi.org/10.1134/S1063783421080059 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 63 2021 8 08 1137-1144 |
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10.1134/S1063783421080059 doi (DE-627)SPR050572830 (SPR)S1063783421080059-e DE-627 ger DE-627 rakwb eng Cao, X. verfasserin aut Exciton States in ZnO/MgZnO Quantum Wells under Electric Field and Magnetic Field 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1137–1144. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. The exciton binding energy decreases with the increase of electric field but increases with the increase of magnetic field. The combined effects of axial electric field and transverse magnetic field on the binding energy indicate that they can compensate each other. In addition, the uncorrelated probability is investigated in the quantum well under the electric and magnetic fields. Wang, H. aut Hu, M. aut Jia, Z. aut Enthalten in Physics of the solid state College Park, Md. : Inst., 1997 63(2021), 8 vom: Aug., Seite 1137-1144 (DE-627)269017275 (DE-600)1473624-X 1090-6460 nnns volume:63 year:2021 number:8 month:08 pages:1137-1144 https://dx.doi.org/10.1134/S1063783421080059 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 63 2021 8 08 1137-1144 |
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10.1134/S1063783421080059 doi (DE-627)SPR050572830 (SPR)S1063783421080059-e DE-627 ger DE-627 rakwb eng Cao, X. verfasserin aut Exciton States in ZnO/MgZnO Quantum Wells under Electric Field and Magnetic Field 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1137–1144. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. The exciton binding energy decreases with the increase of electric field but increases with the increase of magnetic field. The combined effects of axial electric field and transverse magnetic field on the binding energy indicate that they can compensate each other. In addition, the uncorrelated probability is investigated in the quantum well under the electric and magnetic fields. Wang, H. aut Hu, M. aut Jia, Z. aut Enthalten in Physics of the solid state College Park, Md. : Inst., 1997 63(2021), 8 vom: Aug., Seite 1137-1144 (DE-627)269017275 (DE-600)1473624-X 1090-6460 nnns volume:63 year:2021 number:8 month:08 pages:1137-1144 https://dx.doi.org/10.1134/S1063783421080059 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 63 2021 8 08 1137-1144 |
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Cao, X. Exciton States in ZnO/MgZnO Quantum Wells under Electric Field and Magnetic Field |
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exciton states in zno/mgzno quantum wells under electric field and magnetic field |
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Exciton States in ZnO/MgZnO Quantum Wells under Electric Field and Magnetic Field |
| abstract |
Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. The exciton binding energy decreases with the increase of electric field but increases with the increase of magnetic field. The combined effects of axial electric field and transverse magnetic field on the binding energy indicate that they can compensate each other. In addition, the uncorrelated probability is investigated in the quantum well under the electric and magnetic fields. © Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1137–1144. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. |
| abstractGer |
Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. The exciton binding energy decreases with the increase of electric field but increases with the increase of magnetic field. The combined effects of axial electric field and transverse magnetic field on the binding energy indicate that they can compensate each other. In addition, the uncorrelated probability is investigated in the quantum well under the electric and magnetic fields. © Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1137–1144. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. |
| abstract_unstemmed |
Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. The exciton binding energy decreases with the increase of electric field but increases with the increase of magnetic field. The combined effects of axial electric field and transverse magnetic field on the binding energy indicate that they can compensate each other. In addition, the uncorrelated probability is investigated in the quantum well under the electric and magnetic fields. © Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1137–1144. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. |
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Exciton States in ZnO/MgZnO Quantum Wells under Electric Field and Magnetic Field |
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ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1137–1144. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. 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