Tribological Studies of α-β-$ Ga_{2} %$ O_{3} $ Layers Paired with a Sapphire Counterface
Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the parti...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Butenko, P. N. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 11, pp. 1186–1193. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 9, pp. 1354–1362. |
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| Übergeordnetes Werk: |
Enthalten in: Technical physics - Berlin : Springer Science + Business Media, 1997, 66(2021), 11 vom: Nov., Seite 1186-1193 |
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| Übergeordnetes Werk: |
volume:66 ; year:2021 ; number:11 ; month:11 ; pages:1186-1193 |
| Links: |
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| DOI / URN: |
10.1134/S1063784221090048 |
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| Katalog-ID: |
SPR050573373 |
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| 520 | |a Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-$ Ga_{2} %$ O_{3} $ are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-$ Ga_{2} %$ O_{3} $ with a corundum structure. In addition, α- and β-$ Ga_{2} %$ O_{3} $ demonstrate extremely low values of friction coefficients: lower than those of sapphire. | ||
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| 700 | 1 | |a Chikiryaka, A. V. |4 aut | |
| 700 | 1 | |a Pechnikov, A. I. |4 aut | |
| 700 | 1 | |a Nikolaev, V. I. |4 aut | |
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10.1134/S1063784221090048 doi (DE-627)SPR050573373 (SPR)S1063784221090048-e DE-627 ger DE-627 rakwb eng Butenko, P. N. verfasserin aut Tribological Studies of α-β-$ Ga_{2} %$ O_{3} $ Layers Paired with a Sapphire Counterface 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 11, pp. 1186–1193. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 9, pp. 1354–1362. Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-$ Ga_{2} %$ O_{3} $ are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-$ Ga_{2} %$ O_{3} $ with a corundum structure. In addition, α- and β-$ Ga_{2} %$ O_{3} $ demonstrate extremely low values of friction coefficients: lower than those of sapphire. Guzilova, L. I. aut Chikiryaka, A. V. aut Pechnikov, A. I. aut Nikolaev, V. I. aut Enthalten in Technical physics Berlin : Springer Science + Business Media, 1997 66(2021), 11 vom: Nov., Seite 1186-1193 (DE-627)311278795 (DE-600)2008502-3 1090-6525 nnns volume:66 year:2021 number:11 month:11 pages:1186-1193 https://dx.doi.org/10.1134/S1063784221090048 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2021 11 11 1186-1193 |
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10.1134/S1063784221090048 doi (DE-627)SPR050573373 (SPR)S1063784221090048-e DE-627 ger DE-627 rakwb eng Butenko, P. N. verfasserin aut Tribological Studies of α-β-$ Ga_{2} %$ O_{3} $ Layers Paired with a Sapphire Counterface 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 11, pp. 1186–1193. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 9, pp. 1354–1362. Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-$ Ga_{2} %$ O_{3} $ are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-$ Ga_{2} %$ O_{3} $ with a corundum structure. In addition, α- and β-$ Ga_{2} %$ O_{3} $ demonstrate extremely low values of friction coefficients: lower than those of sapphire. Guzilova, L. I. aut Chikiryaka, A. V. aut Pechnikov, A. I. aut Nikolaev, V. I. aut Enthalten in Technical physics Berlin : Springer Science + Business Media, 1997 66(2021), 11 vom: Nov., Seite 1186-1193 (DE-627)311278795 (DE-600)2008502-3 1090-6525 nnns volume:66 year:2021 number:11 month:11 pages:1186-1193 https://dx.doi.org/10.1134/S1063784221090048 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2021 11 11 1186-1193 |
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10.1134/S1063784221090048 doi (DE-627)SPR050573373 (SPR)S1063784221090048-e DE-627 ger DE-627 rakwb eng Butenko, P. N. verfasserin aut Tribological Studies of α-β-$ Ga_{2} %$ O_{3} $ Layers Paired with a Sapphire Counterface 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 11, pp. 1186–1193. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 9, pp. 1354–1362. Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-$ Ga_{2} %$ O_{3} $ are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-$ Ga_{2} %$ O_{3} $ with a corundum structure. In addition, α- and β-$ Ga_{2} %$ O_{3} $ demonstrate extremely low values of friction coefficients: lower than those of sapphire. Guzilova, L. I. aut Chikiryaka, A. V. aut Pechnikov, A. I. aut Nikolaev, V. I. aut Enthalten in Technical physics Berlin : Springer Science + Business Media, 1997 66(2021), 11 vom: Nov., Seite 1186-1193 (DE-627)311278795 (DE-600)2008502-3 1090-6525 nnns volume:66 year:2021 number:11 month:11 pages:1186-1193 https://dx.doi.org/10.1134/S1063784221090048 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2021 11 11 1186-1193 |
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10.1134/S1063784221090048 doi (DE-627)SPR050573373 (SPR)S1063784221090048-e DE-627 ger DE-627 rakwb eng Butenko, P. N. verfasserin aut Tribological Studies of α-β-$ Ga_{2} %$ O_{3} $ Layers Paired with a Sapphire Counterface 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 11, pp. 1186–1193. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 9, pp. 1354–1362. Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-$ Ga_{2} %$ O_{3} $ are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-$ Ga_{2} %$ O_{3} $ with a corundum structure. In addition, α- and β-$ Ga_{2} %$ O_{3} $ demonstrate extremely low values of friction coefficients: lower than those of sapphire. Guzilova, L. I. aut Chikiryaka, A. V. aut Pechnikov, A. I. aut Nikolaev, V. I. aut Enthalten in Technical physics Berlin : Springer Science + Business Media, 1997 66(2021), 11 vom: Nov., Seite 1186-1193 (DE-627)311278795 (DE-600)2008502-3 1090-6525 nnns volume:66 year:2021 number:11 month:11 pages:1186-1193 https://dx.doi.org/10.1134/S1063784221090048 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2021 11 11 1186-1193 |
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10.1134/S1063784221090048 doi (DE-627)SPR050573373 (SPR)S1063784221090048-e DE-627 ger DE-627 rakwb eng Butenko, P. N. verfasserin aut Tribological Studies of α-β-$ Ga_{2} %$ O_{3} $ Layers Paired with a Sapphire Counterface 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 11, pp. 1186–1193. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 9, pp. 1354–1362. Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-$ Ga_{2} %$ O_{3} $ are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-$ Ga_{2} %$ O_{3} $ with a corundum structure. In addition, α- and β-$ Ga_{2} %$ O_{3} $ demonstrate extremely low values of friction coefficients: lower than those of sapphire. Guzilova, L. I. aut Chikiryaka, A. V. aut Pechnikov, A. I. aut Nikolaev, V. I. aut Enthalten in Technical physics Berlin : Springer Science + Business Media, 1997 66(2021), 11 vom: Nov., Seite 1186-1193 (DE-627)311278795 (DE-600)2008502-3 1090-6525 nnns volume:66 year:2021 number:11 month:11 pages:1186-1193 https://dx.doi.org/10.1134/S1063784221090048 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2021 11 11 1186-1193 |
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ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 11, pp. 1186–1193. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 9, pp. 1354–1362.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-$ Ga_{2} %$ O_{3} $ are more resistant to abrasion than the layers of the thermostable β-phase. 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Tribological Studies of α-β-$ Ga_{2} %$ O_{3} $ Layers Paired with a Sapphire Counterface |
| abstract |
Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-$ Ga_{2} %$ O_{3} $ are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-$ Ga_{2} %$ O_{3} $ with a corundum structure. In addition, α- and β-$ Ga_{2} %$ O_{3} $ demonstrate extremely low values of friction coefficients: lower than those of sapphire. © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 11, pp. 1186–1193. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 9, pp. 1354–1362. |
| abstractGer |
Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-$ Ga_{2} %$ O_{3} $ are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-$ Ga_{2} %$ O_{3} $ with a corundum structure. In addition, α- and β-$ Ga_{2} %$ O_{3} $ demonstrate extremely low values of friction coefficients: lower than those of sapphire. © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 11, pp. 1186–1193. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 9, pp. 1354–1362. |
| abstract_unstemmed |
Abstract The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-$ Ga_{2} %$ O_{3} $ are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-$ Ga_{2} %$ O_{3} $ with a corundum structure. In addition, α- and β-$ Ga_{2} %$ O_{3} $ demonstrate extremely low values of friction coefficients: lower than those of sapphire. © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 11, pp. 1186–1193. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 9, pp. 1354–1362. |
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Tribological Studies of α-β-$ Ga_{2} %$ O_{3} $ Layers Paired with a Sapphire Counterface |
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Guzilova, L. I. Chikiryaka, A. V. Pechnikov, A. I. Nikolaev, V. I. |
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Guzilova, L. I. Chikiryaka, A. V. Pechnikov, A. I. Nikolaev, V. I. |
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| score |
7.400649 |