Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer

Abstract The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffe...
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Autor*in:	Gusev, A. S. [verfasserIn] Kargin, N. I. Ryndya, S. M. Safaraliev, G. K. Siglovaya, N. V. Smirnova, M. O. Solomatin, I. O. Sultanov, A. O. Timofeev, A. A.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Anmerkung:	© Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 7, pp. 869–877. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 6, pp. 988–996.

Übergeordnetes Werk:	Enthalten in: Technical physics - Berlin : Springer Science + Business Media, 1997, 66(2021), 7 vom: Juli, Seite 869-877
Übergeordnetes Werk:	volume:66 ; year:2021 ; number:7 ; month:07 ; pages:869-877

Links:	Volltext

DOI / URN:	10.1134/S1063784221060074

Katalog-ID:	SPR050574027

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520			\|a Abstract The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples.
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allfields	10.1134/S1063784221060074 doi (DE-627)SPR050574027 (SPR)S1063784221060074-e DE-627 ger DE-627 rakwb eng Gusev, A. S. verfasserin aut Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 7, pp. 869–877. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 6, pp. 988–996. Abstract The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples. Kargin, N. I. aut Ryndya, S. M. aut Safaraliev, G. K. aut Siglovaya, N. V. aut Smirnova, M. O. aut Solomatin, I. O. aut Sultanov, A. O. aut Timofeev, A. A. aut Enthalten in Technical physics Berlin : Springer Science + Business Media, 1997 66(2021), 7 vom: Juli, Seite 869-877 (DE-627)311278795 (DE-600)2008502-3 1090-6525 nnns volume:66 year:2021 number:7 month:07 pages:869-877 https://dx.doi.org/10.1134/S1063784221060074 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2021 7 07 869-877
spelling	10.1134/S1063784221060074 doi (DE-627)SPR050574027 (SPR)S1063784221060074-e DE-627 ger DE-627 rakwb eng Gusev, A. S. verfasserin aut Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 7, pp. 869–877. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 6, pp. 988–996. Abstract The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples. Kargin, N. I. aut Ryndya, S. M. aut Safaraliev, G. K. aut Siglovaya, N. V. aut Smirnova, M. O. aut Solomatin, I. O. aut Sultanov, A. O. aut Timofeev, A. A. aut Enthalten in Technical physics Berlin : Springer Science + Business Media, 1997 66(2021), 7 vom: Juli, Seite 869-877 (DE-627)311278795 (DE-600)2008502-3 1090-6525 nnns volume:66 year:2021 number:7 month:07 pages:869-877 https://dx.doi.org/10.1134/S1063784221060074 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2021 7 07 869-877
allfields_unstemmed	10.1134/S1063784221060074 doi (DE-627)SPR050574027 (SPR)S1063784221060074-e DE-627 ger DE-627 rakwb eng Gusev, A. S. verfasserin aut Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 7, pp. 869–877. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 6, pp. 988–996. Abstract The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples. Kargin, N. I. aut Ryndya, S. M. aut Safaraliev, G. K. aut Siglovaya, N. V. aut Smirnova, M. O. aut Solomatin, I. O. aut Sultanov, A. O. aut Timofeev, A. A. aut Enthalten in Technical physics Berlin : Springer Science + Business Media, 1997 66(2021), 7 vom: Juli, Seite 869-877 (DE-627)311278795 (DE-600)2008502-3 1090-6525 nnns volume:66 year:2021 number:7 month:07 pages:869-877 https://dx.doi.org/10.1134/S1063784221060074 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2021 7 07 869-877
allfieldsGer	10.1134/S1063784221060074 doi (DE-627)SPR050574027 (SPR)S1063784221060074-e DE-627 ger DE-627 rakwb eng Gusev, A. S. verfasserin aut Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 7, pp. 869–877. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 6, pp. 988–996. Abstract The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples. Kargin, N. I. aut Ryndya, S. M. aut Safaraliev, G. K. aut Siglovaya, N. V. aut Smirnova, M. O. aut Solomatin, I. O. aut Sultanov, A. O. aut Timofeev, A. A. aut Enthalten in Technical physics Berlin : Springer Science + Business Media, 1997 66(2021), 7 vom: Juli, Seite 869-877 (DE-627)311278795 (DE-600)2008502-3 1090-6525 nnns volume:66 year:2021 number:7 month:07 pages:869-877 https://dx.doi.org/10.1134/S1063784221060074 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2021 7 07 869-877
allfieldsSound	10.1134/S1063784221060074 doi (DE-627)SPR050574027 (SPR)S1063784221060074-e DE-627 ger DE-627 rakwb eng Gusev, A. S. verfasserin aut Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 7, pp. 869–877. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 6, pp. 988–996. Abstract The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples. Kargin, N. I. aut Ryndya, S. M. aut Safaraliev, G. K. aut Siglovaya, N. V. aut Smirnova, M. O. aut Solomatin, I. O. aut Sultanov, A. O. aut Timofeev, A. A. aut Enthalten in Technical physics Berlin : Springer Science + Business Media, 1997 66(2021), 7 vom: Juli, Seite 869-877 (DE-627)311278795 (DE-600)2008502-3 1090-6525 nnns volume:66 year:2021 number:7 month:07 pages:869-877 https://dx.doi.org/10.1134/S1063784221060074 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2021 7 07 869-877
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source	Enthalten in Technical physics 66(2021), 7 vom: Juli, Seite 869-877 volume:66 year:2021 number:7 month:07 pages:869-877
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authorswithroles_txt_mv	Gusev, A. S. @@aut@@ Kargin, N. I. @@aut@@ Ryndya, S. M. @@aut@@ Safaraliev, G. K. @@aut@@ Siglovaya, N. V. @@aut@@ Smirnova, M. O. @@aut@@ Solomatin, I. O. @@aut@@ Sultanov, A. O. @@aut@@ Timofeev, A. A. @@aut@@
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author	Gusev, A. S.
spellingShingle	Gusev, A. S. Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer
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title_full	Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer
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author_browse	Gusev, A. S. Kargin, N. I. Ryndya, S. M. Safaraliev, G. K. Siglovaya, N. V. Smirnova, M. O. Solomatin, I. O. Sultanov, A. O. Timofeev, A. A.
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title_sort	relaxation of mechanical stress in epitaxial films of cubic silicon carbide on silicon substrates with a buffer porous layer
title_auth	Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer
abstract	Abstract The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples. © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 7, pp. 869–877. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 6, pp. 988–996.
abstractGer	Abstract The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples. © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 7, pp. 869–877. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 6, pp. 988–996.
abstract_unstemmed	Abstract The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples. © Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 7, pp. 869–877. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 6, pp. 988–996.
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container_issue	7
title_short	Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer
url	https://dx.doi.org/10.1134/S1063784221060074
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author2	Kargin, N. I. Ryndya, S. M. Safaraliev, G. K. Siglovaya, N. V. Smirnova, M. O. Solomatin, I. O. Sultanov, A. O. Timofeev, A. A.
author2Str	Kargin, N. I. Ryndya, S. M. Safaraliev, G. K. Siglovaya, N. V. Smirnova, M. O. Solomatin, I. O. Sultanov, A. O. Timofeev, A. A.
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doi_str	10.1134/S1063784221060074
up_date	2024-07-03T16:24:42.543Z
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Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer

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