Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators

Abstract The existence of a single topologically protected edge state in the first bulk bandgap for acoustic/elastic valley Hall insulators (VHIs) with zigzag interface configurations (ZICs) is well known. However, in this work, we show that an ultra-broadband edge-state pair in this bandgap can be...
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Autor*in:	Zhang, Jinhao [verfasserIn] Wang, Fengwen Sigmund, Ole Gao, Liang Christiansen, Rasmus E.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	valley Hall insulators zigzag interface configuration edge-state pair topology optimization

Anmerkung:	© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2022

Übergeordnetes Werk:	Enthalten in: Science in China - Heidelberg : Springer, 2003, 65(2022), 5 vom: 29. März
Übergeordnetes Werk:	volume:65 ; year:2022 ; number:5 ; day:29 ; month:03

Links:	Volltext

DOI / URN:	10.1007/s11433-021-1854-2

Katalog-ID:	SPR050611933

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allfields	10.1007/s11433-021-1854-2 doi (DE-627)SPR050611933 (SPR)s11433-021-1854-2-e DE-627 ger DE-627 rakwb eng Zhang, Jinhao verfasserin aut Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2022 Abstract The existence of a single topologically protected edge state in the first bulk bandgap for acoustic/elastic valley Hall insulators (VHIs) with zigzag interface configurations (ZICs) is well known. However, in this work, we show that an ultra-broadband edge-state pair in this bandgap can be created using the inverse design by topology optimization. The valley Hall insulator design increases the operational bandwidth 121% compared with an existing valley Hall insulator from recent literature and exhibits extreme field confinement, where more than 99% of the field intensity is concentrated within three unit-cells from the interface. One-way propagation and topological robustness towards small cavity defects are confirmed for the full bandwidth. The exploitation of such edge-state pairs of valley Hall insulators opens an avenue for realizing broadband confined edge modes. In tests for disorder and bend defects, we show that the additional ZIC, with a different operational frequency interval, encountered at the defects, degrades the transmission for bend and disorder defects which may prove significant for the application of VHIs. Through an alternative topology optimization method based on two ZICs, we further increase their common operational bandwidth. valley Hall insulators (dpeaa)DE-He213 zigzag interface configuration (dpeaa)DE-He213 edge-state pair (dpeaa)DE-He213 topology optimization (dpeaa)DE-He213 Wang, Fengwen aut Sigmund, Ole aut Gao, Liang aut Christiansen, Rasmus E. aut Enthalten in Science in China Heidelberg : Springer, 2003 65(2022), 5 vom: 29. März (DE-627)385614799 (DE-600)2142901-7 1862-2844 nnns volume:65 year:2022 number:5 day:29 month:03 https://dx.doi.org/10.1007/s11433-021-1854-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 AR 65 2022 5 29 03
spelling	10.1007/s11433-021-1854-2 doi (DE-627)SPR050611933 (SPR)s11433-021-1854-2-e DE-627 ger DE-627 rakwb eng Zhang, Jinhao verfasserin aut Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2022 Abstract The existence of a single topologically protected edge state in the first bulk bandgap for acoustic/elastic valley Hall insulators (VHIs) with zigzag interface configurations (ZICs) is well known. However, in this work, we show that an ultra-broadband edge-state pair in this bandgap can be created using the inverse design by topology optimization. The valley Hall insulator design increases the operational bandwidth 121% compared with an existing valley Hall insulator from recent literature and exhibits extreme field confinement, where more than 99% of the field intensity is concentrated within three unit-cells from the interface. One-way propagation and topological robustness towards small cavity defects are confirmed for the full bandwidth. The exploitation of such edge-state pairs of valley Hall insulators opens an avenue for realizing broadband confined edge modes. In tests for disorder and bend defects, we show that the additional ZIC, with a different operational frequency interval, encountered at the defects, degrades the transmission for bend and disorder defects which may prove significant for the application of VHIs. Through an alternative topology optimization method based on two ZICs, we further increase their common operational bandwidth. valley Hall insulators (dpeaa)DE-He213 zigzag interface configuration (dpeaa)DE-He213 edge-state pair (dpeaa)DE-He213 topology optimization (dpeaa)DE-He213 Wang, Fengwen aut Sigmund, Ole aut Gao, Liang aut Christiansen, Rasmus E. aut Enthalten in Science in China Heidelberg : Springer, 2003 65(2022), 5 vom: 29. März (DE-627)385614799 (DE-600)2142901-7 1862-2844 nnns volume:65 year:2022 number:5 day:29 month:03 https://dx.doi.org/10.1007/s11433-021-1854-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 AR 65 2022 5 29 03
allfields_unstemmed	10.1007/s11433-021-1854-2 doi (DE-627)SPR050611933 (SPR)s11433-021-1854-2-e DE-627 ger DE-627 rakwb eng Zhang, Jinhao verfasserin aut Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2022 Abstract The existence of a single topologically protected edge state in the first bulk bandgap for acoustic/elastic valley Hall insulators (VHIs) with zigzag interface configurations (ZICs) is well known. However, in this work, we show that an ultra-broadband edge-state pair in this bandgap can be created using the inverse design by topology optimization. The valley Hall insulator design increases the operational bandwidth 121% compared with an existing valley Hall insulator from recent literature and exhibits extreme field confinement, where more than 99% of the field intensity is concentrated within three unit-cells from the interface. One-way propagation and topological robustness towards small cavity defects are confirmed for the full bandwidth. The exploitation of such edge-state pairs of valley Hall insulators opens an avenue for realizing broadband confined edge modes. In tests for disorder and bend defects, we show that the additional ZIC, with a different operational frequency interval, encountered at the defects, degrades the transmission for bend and disorder defects which may prove significant for the application of VHIs. Through an alternative topology optimization method based on two ZICs, we further increase their common operational bandwidth. valley Hall insulators (dpeaa)DE-He213 zigzag interface configuration (dpeaa)DE-He213 edge-state pair (dpeaa)DE-He213 topology optimization (dpeaa)DE-He213 Wang, Fengwen aut Sigmund, Ole aut Gao, Liang aut Christiansen, Rasmus E. aut Enthalten in Science in China Heidelberg : Springer, 2003 65(2022), 5 vom: 29. März (DE-627)385614799 (DE-600)2142901-7 1862-2844 nnns volume:65 year:2022 number:5 day:29 month:03 https://dx.doi.org/10.1007/s11433-021-1854-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 AR 65 2022 5 29 03
allfieldsGer	10.1007/s11433-021-1854-2 doi (DE-627)SPR050611933 (SPR)s11433-021-1854-2-e DE-627 ger DE-627 rakwb eng Zhang, Jinhao verfasserin aut Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2022 Abstract The existence of a single topologically protected edge state in the first bulk bandgap for acoustic/elastic valley Hall insulators (VHIs) with zigzag interface configurations (ZICs) is well known. However, in this work, we show that an ultra-broadband edge-state pair in this bandgap can be created using the inverse design by topology optimization. The valley Hall insulator design increases the operational bandwidth 121% compared with an existing valley Hall insulator from recent literature and exhibits extreme field confinement, where more than 99% of the field intensity is concentrated within three unit-cells from the interface. One-way propagation and topological robustness towards small cavity defects are confirmed for the full bandwidth. The exploitation of such edge-state pairs of valley Hall insulators opens an avenue for realizing broadband confined edge modes. In tests for disorder and bend defects, we show that the additional ZIC, with a different operational frequency interval, encountered at the defects, degrades the transmission for bend and disorder defects which may prove significant for the application of VHIs. Through an alternative topology optimization method based on two ZICs, we further increase their common operational bandwidth. valley Hall insulators (dpeaa)DE-He213 zigzag interface configuration (dpeaa)DE-He213 edge-state pair (dpeaa)DE-He213 topology optimization (dpeaa)DE-He213 Wang, Fengwen aut Sigmund, Ole aut Gao, Liang aut Christiansen, Rasmus E. aut Enthalten in Science in China Heidelberg : Springer, 2003 65(2022), 5 vom: 29. März (DE-627)385614799 (DE-600)2142901-7 1862-2844 nnns volume:65 year:2022 number:5 day:29 month:03 https://dx.doi.org/10.1007/s11433-021-1854-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 AR 65 2022 5 29 03
allfieldsSound	10.1007/s11433-021-1854-2 doi (DE-627)SPR050611933 (SPR)s11433-021-1854-2-e DE-627 ger DE-627 rakwb eng Zhang, Jinhao verfasserin aut Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2022 Abstract The existence of a single topologically protected edge state in the first bulk bandgap for acoustic/elastic valley Hall insulators (VHIs) with zigzag interface configurations (ZICs) is well known. However, in this work, we show that an ultra-broadband edge-state pair in this bandgap can be created using the inverse design by topology optimization. The valley Hall insulator design increases the operational bandwidth 121% compared with an existing valley Hall insulator from recent literature and exhibits extreme field confinement, where more than 99% of the field intensity is concentrated within three unit-cells from the interface. One-way propagation and topological robustness towards small cavity defects are confirmed for the full bandwidth. The exploitation of such edge-state pairs of valley Hall insulators opens an avenue for realizing broadband confined edge modes. In tests for disorder and bend defects, we show that the additional ZIC, with a different operational frequency interval, encountered at the defects, degrades the transmission for bend and disorder defects which may prove significant for the application of VHIs. Through an alternative topology optimization method based on two ZICs, we further increase their common operational bandwidth. valley Hall insulators (dpeaa)DE-He213 zigzag interface configuration (dpeaa)DE-He213 edge-state pair (dpeaa)DE-He213 topology optimization (dpeaa)DE-He213 Wang, Fengwen aut Sigmund, Ole aut Gao, Liang aut Christiansen, Rasmus E. aut Enthalten in Science in China Heidelberg : Springer, 2003 65(2022), 5 vom: 29. März (DE-627)385614799 (DE-600)2142901-7 1862-2844 nnns volume:65 year:2022 number:5 day:29 month:03 https://dx.doi.org/10.1007/s11433-021-1854-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 AR 65 2022 5 29 03
language	English
source	Enthalten in Science in China 65(2022), 5 vom: 29. März volume:65 year:2022 number:5 day:29 month:03
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format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	valley Hall insulators zigzag interface configuration edge-state pair topology optimization
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container_title	Science in China
authorswithroles_txt_mv	Zhang, Jinhao @@aut@@ Wang, Fengwen @@aut@@ Sigmund, Ole @@aut@@ Gao, Liang @@aut@@ Christiansen, Rasmus E. @@aut@@
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author	Zhang, Jinhao
spellingShingle	Zhang, Jinhao misc valley Hall insulators misc zigzag interface configuration misc edge-state pair misc topology optimization Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators
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topic_title	Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators valley Hall insulators (dpeaa)DE-He213 zigzag interface configuration (dpeaa)DE-He213 edge-state pair (dpeaa)DE-He213 topology optimization (dpeaa)DE-He213
topic	misc valley Hall insulators misc zigzag interface configuration misc edge-state pair misc topology optimization
topic_unstemmed	misc valley Hall insulators misc zigzag interface configuration misc edge-state pair misc topology optimization
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title	Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators
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title_full	Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators
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title_sort	ultra-broadband edge-state pair for zigzag-interfaced valley hall insulators
title_auth	Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators
abstract	Abstract The existence of a single topologically protected edge state in the first bulk bandgap for acoustic/elastic valley Hall insulators (VHIs) with zigzag interface configurations (ZICs) is well known. However, in this work, we show that an ultra-broadband edge-state pair in this bandgap can be created using the inverse design by topology optimization. The valley Hall insulator design increases the operational bandwidth 121% compared with an existing valley Hall insulator from recent literature and exhibits extreme field confinement, where more than 99% of the field intensity is concentrated within three unit-cells from the interface. One-way propagation and topological robustness towards small cavity defects are confirmed for the full bandwidth. The exploitation of such edge-state pairs of valley Hall insulators opens an avenue for realizing broadband confined edge modes. In tests for disorder and bend defects, we show that the additional ZIC, with a different operational frequency interval, encountered at the defects, degrades the transmission for bend and disorder defects which may prove significant for the application of VHIs. Through an alternative topology optimization method based on two ZICs, we further increase their common operational bandwidth. © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2022
abstractGer	Abstract The existence of a single topologically protected edge state in the first bulk bandgap for acoustic/elastic valley Hall insulators (VHIs) with zigzag interface configurations (ZICs) is well known. However, in this work, we show that an ultra-broadband edge-state pair in this bandgap can be created using the inverse design by topology optimization. The valley Hall insulator design increases the operational bandwidth 121% compared with an existing valley Hall insulator from recent literature and exhibits extreme field confinement, where more than 99% of the field intensity is concentrated within three unit-cells from the interface. One-way propagation and topological robustness towards small cavity defects are confirmed for the full bandwidth. The exploitation of such edge-state pairs of valley Hall insulators opens an avenue for realizing broadband confined edge modes. In tests for disorder and bend defects, we show that the additional ZIC, with a different operational frequency interval, encountered at the defects, degrades the transmission for bend and disorder defects which may prove significant for the application of VHIs. Through an alternative topology optimization method based on two ZICs, we further increase their common operational bandwidth. © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2022
abstract_unstemmed	Abstract The existence of a single topologically protected edge state in the first bulk bandgap for acoustic/elastic valley Hall insulators (VHIs) with zigzag interface configurations (ZICs) is well known. However, in this work, we show that an ultra-broadband edge-state pair in this bandgap can be created using the inverse design by topology optimization. The valley Hall insulator design increases the operational bandwidth 121% compared with an existing valley Hall insulator from recent literature and exhibits extreme field confinement, where more than 99% of the field intensity is concentrated within three unit-cells from the interface. One-way propagation and topological robustness towards small cavity defects are confirmed for the full bandwidth. The exploitation of such edge-state pairs of valley Hall insulators opens an avenue for realizing broadband confined edge modes. In tests for disorder and bend defects, we show that the additional ZIC, with a different operational frequency interval, encountered at the defects, degrades the transmission for bend and disorder defects which may prove significant for the application of VHIs. Through an alternative topology optimization method based on two ZICs, we further increase their common operational bandwidth. © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2022
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title_short	Ultra-broadband edge-state pair for zigzag-interfaced valley Hall insulators
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