Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

Abstract Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated t...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Li, Yang [verfasserIn] Zhang, Cheng Shi, Zhiming Ma, Chunlan Wang, Jun Zhang, Qichun

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	flexible memristor 2D material metal-organic framework covalent organic framework perovskite

Anmerkung:	© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Übergeordnetes Werk:	Enthalten in: Science China materials - Beijing : Science China Press, 2014, 65(2021), 8 vom: 28. Sept., Seite 2110-2127
Übergeordnetes Werk:	volume:65 ; year:2021 ; number:8 ; day:28 ; month:09 ; pages:2110-2127

Links:	Volltext

DOI / URN:	10.1007/s40843-021-1771-5

Katalog-ID:	SPR050850261

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520			\|a Abstract Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented.
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allfields	10.1007/s40843-021-1771-5 doi (DE-627)SPR050850261 (SPR)s40843-021-1771-5-e DE-627 ger DE-627 rakwb eng Li, Yang verfasserin aut Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021 Abstract Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented. flexible memristor (dpeaa)DE-He213 2D material (dpeaa)DE-He213 metal-organic framework (dpeaa)DE-He213 covalent organic framework (dpeaa)DE-He213 perovskite (dpeaa)DE-He213 Zhang, Cheng aut Shi, Zhiming aut Ma, Chunlan aut Wang, Jun aut Zhang, Qichun aut Enthalten in Science China materials Beijing : Science China Press, 2014 65(2021), 8 vom: 28. Sept., Seite 2110-2127 (DE-627)815914733 (DE-600)2806677-7 2199-4501 nnns volume:65 year:2021 number:8 day:28 month:09 pages:2110-2127 https://dx.doi.org/10.1007/s40843-021-1771-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 65 2021 8 28 09 2110-2127
spelling	10.1007/s40843-021-1771-5 doi (DE-627)SPR050850261 (SPR)s40843-021-1771-5-e DE-627 ger DE-627 rakwb eng Li, Yang verfasserin aut Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021 Abstract Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented. flexible memristor (dpeaa)DE-He213 2D material (dpeaa)DE-He213 metal-organic framework (dpeaa)DE-He213 covalent organic framework (dpeaa)DE-He213 perovskite (dpeaa)DE-He213 Zhang, Cheng aut Shi, Zhiming aut Ma, Chunlan aut Wang, Jun aut Zhang, Qichun aut Enthalten in Science China materials Beijing : Science China Press, 2014 65(2021), 8 vom: 28. Sept., Seite 2110-2127 (DE-627)815914733 (DE-600)2806677-7 2199-4501 nnns volume:65 year:2021 number:8 day:28 month:09 pages:2110-2127 https://dx.doi.org/10.1007/s40843-021-1771-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 65 2021 8 28 09 2110-2127
allfields_unstemmed	10.1007/s40843-021-1771-5 doi (DE-627)SPR050850261 (SPR)s40843-021-1771-5-e DE-627 ger DE-627 rakwb eng Li, Yang verfasserin aut Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021 Abstract Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented. flexible memristor (dpeaa)DE-He213 2D material (dpeaa)DE-He213 metal-organic framework (dpeaa)DE-He213 covalent organic framework (dpeaa)DE-He213 perovskite (dpeaa)DE-He213 Zhang, Cheng aut Shi, Zhiming aut Ma, Chunlan aut Wang, Jun aut Zhang, Qichun aut Enthalten in Science China materials Beijing : Science China Press, 2014 65(2021), 8 vom: 28. Sept., Seite 2110-2127 (DE-627)815914733 (DE-600)2806677-7 2199-4501 nnns volume:65 year:2021 number:8 day:28 month:09 pages:2110-2127 https://dx.doi.org/10.1007/s40843-021-1771-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 65 2021 8 28 09 2110-2127
allfieldsGer	10.1007/s40843-021-1771-5 doi (DE-627)SPR050850261 (SPR)s40843-021-1771-5-e DE-627 ger DE-627 rakwb eng Li, Yang verfasserin aut Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021 Abstract Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented. flexible memristor (dpeaa)DE-He213 2D material (dpeaa)DE-He213 metal-organic framework (dpeaa)DE-He213 covalent organic framework (dpeaa)DE-He213 perovskite (dpeaa)DE-He213 Zhang, Cheng aut Shi, Zhiming aut Ma, Chunlan aut Wang, Jun aut Zhang, Qichun aut Enthalten in Science China materials Beijing : Science China Press, 2014 65(2021), 8 vom: 28. Sept., Seite 2110-2127 (DE-627)815914733 (DE-600)2806677-7 2199-4501 nnns volume:65 year:2021 number:8 day:28 month:09 pages:2110-2127 https://dx.doi.org/10.1007/s40843-021-1771-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 65 2021 8 28 09 2110-2127
allfieldsSound	10.1007/s40843-021-1771-5 doi (DE-627)SPR050850261 (SPR)s40843-021-1771-5-e DE-627 ger DE-627 rakwb eng Li, Yang verfasserin aut Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021 Abstract Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented. flexible memristor (dpeaa)DE-He213 2D material (dpeaa)DE-He213 metal-organic framework (dpeaa)DE-He213 covalent organic framework (dpeaa)DE-He213 perovskite (dpeaa)DE-He213 Zhang, Cheng aut Shi, Zhiming aut Ma, Chunlan aut Wang, Jun aut Zhang, Qichun aut Enthalten in Science China materials Beijing : Science China Press, 2014 65(2021), 8 vom: 28. Sept., Seite 2110-2127 (DE-627)815914733 (DE-600)2806677-7 2199-4501 nnns volume:65 year:2021 number:8 day:28 month:09 pages:2110-2127 https://dx.doi.org/10.1007/s40843-021-1771-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 65 2021 8 28 09 2110-2127
language	English
source	Enthalten in Science China materials 65(2021), 8 vom: 28. Sept., Seite 2110-2127 volume:65 year:2021 number:8 day:28 month:09 pages:2110-2127
sourceStr	Enthalten in Science China materials 65(2021), 8 vom: 28. Sept., Seite 2110-2127 volume:65 year:2021 number:8 day:28 month:09 pages:2110-2127
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	flexible memristor 2D material metal-organic framework covalent organic framework perovskite
isfreeaccess_bool	false
container_title	Science China materials
authorswithroles_txt_mv	Li, Yang @@aut@@ Zhang, Cheng @@aut@@ Shi, Zhiming @@aut@@ Ma, Chunlan @@aut@@ Wang, Jun @@aut@@ Zhang, Qichun @@aut@@
publishDateDaySort_date	2021-09-28T00:00:00Z
hierarchy_top_id	815914733
id	SPR050850261
language_de	englisch
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author	Li, Yang
spellingShingle	Li, Yang misc flexible memristor misc 2D material misc metal-organic framework misc covalent organic framework misc perovskite Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications
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topic_title	Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications flexible memristor (dpeaa)DE-He213 2D material (dpeaa)DE-He213 metal-organic framework (dpeaa)DE-He213 covalent organic framework (dpeaa)DE-He213 perovskite (dpeaa)DE-He213
topic	misc flexible memristor misc 2D material misc metal-organic framework misc covalent organic framework misc perovskite
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title	Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications
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title_full	Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications
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author_browse	Li, Yang Zhang, Cheng Shi, Zhiming Ma, Chunlan Wang, Jun Zhang, Qichun
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doi_str_mv	10.1007/s40843-021-1771-5
title_sort	recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications
title_auth	Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications
abstract	Abstract Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented. © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
abstractGer	Abstract Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented. © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
abstract_unstemmed	Abstract Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented. © Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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container_issue	8
title_short	Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications
url	https://dx.doi.org/10.1007/s40843-021-1771-5
remote_bool	true
author2	Zhang, Cheng Shi, Zhiming Ma, Chunlan Wang, Jun Zhang, Qichun
author2Str	Zhang, Cheng Shi, Zhiming Ma, Chunlan Wang, Jun Zhang, Qichun
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doi_str	10.1007/s40843-021-1771-5
up_date	2024-07-03T18:10:47.191Z
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Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

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