Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate
Abstract Transmission electron microscopy is used to study the crystalline granular structure of a low-temperature GaAs epitaxial layer grown on a Si(100) substrate. The grain sizes are determined using a series of electron-microscopy images acquired in a small range of tilt angles of a plan-view sp...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Sazonov, V. A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2022. ISSN 1027-4510, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2022, Vol. 16, No. 4, pp. 490–496. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2022, published in Poverkhnost’, 2022, No. 7, pp. 57–64. |
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| Übergeordnetes Werk: |
Enthalten in: Journal of surface investigation - Moscow : MAIK Nauka/Interperiodics Publ., 2007, 16(2022), 4 vom: Aug., Seite 490-496 |
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| Übergeordnetes Werk: |
volume:16 ; year:2022 ; number:4 ; month:08 ; pages:490-496 |
| Links: |
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| DOI / URN: |
10.1134/S1027451022040164 |
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| Katalog-ID: |
SPR050898787 |
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| 520 | |a Abstract Transmission electron microscopy is used to study the crystalline granular structure of a low-temperature GaAs epitaxial layer grown on a Si(100) substrate. The grain sizes are determined using a series of electron-microscopy images acquired in a small range of tilt angles of a plan-view specimen around the Si[110] and Si[1%$\bar {1}%$0] directions. The grain boundaries can be unambiguously identified by the digital processing of images obtained by bright-field transmission electron microscopy and using electrons scattered at small angles by scanning transmission electron microscopy. The effectiveness of a semi-automated method for detecting grain boundaries is demonstrated; the method is used to plot and analyze a histogram of the grain distribution by their lateral sizes. | ||
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| 700 | 1 | |a Kukin, V. N. |4 aut | |
| 700 | 1 | |a Kazakov, I. P. |4 aut | |
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10.1134/S1027451022040164 doi (DE-627)SPR050898787 (SPR)S1027451022040164-e DE-627 ger DE-627 rakwb eng Sazonov, V. A. verfasserin aut Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2022. ISSN 1027-4510, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2022, Vol. 16, No. 4, pp. 490–496. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2022, published in Poverkhnost’, 2022, No. 7, pp. 57–64. Abstract Transmission electron microscopy is used to study the crystalline granular structure of a low-temperature GaAs epitaxial layer grown on a Si(100) substrate. The grain sizes are determined using a series of electron-microscopy images acquired in a small range of tilt angles of a plan-view specimen around the Si[110] and Si[1%$\bar {1}%$0] directions. The grain boundaries can be unambiguously identified by the digital processing of images obtained by bright-field transmission electron microscopy and using electrons scattered at small angles by scanning transmission electron microscopy. The effectiveness of a semi-automated method for detecting grain boundaries is demonstrated; the method is used to plot and analyze a histogram of the grain distribution by their lateral sizes. Borgardt, N. I. aut Kukin, V. N. aut Kazakov, I. P. aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 16(2022), 4 vom: Aug., Seite 490-496 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:16 year:2022 number:4 month:08 pages:490-496 https://dx.doi.org/10.1134/S1027451022040164 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 16 2022 4 08 490-496 |
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10.1134/S1027451022040164 doi (DE-627)SPR050898787 (SPR)S1027451022040164-e DE-627 ger DE-627 rakwb eng Sazonov, V. A. verfasserin aut Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2022. ISSN 1027-4510, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2022, Vol. 16, No. 4, pp. 490–496. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2022, published in Poverkhnost’, 2022, No. 7, pp. 57–64. Abstract Transmission electron microscopy is used to study the crystalline granular structure of a low-temperature GaAs epitaxial layer grown on a Si(100) substrate. The grain sizes are determined using a series of electron-microscopy images acquired in a small range of tilt angles of a plan-view specimen around the Si[110] and Si[1%$\bar {1}%$0] directions. The grain boundaries can be unambiguously identified by the digital processing of images obtained by bright-field transmission electron microscopy and using electrons scattered at small angles by scanning transmission electron microscopy. The effectiveness of a semi-automated method for detecting grain boundaries is demonstrated; the method is used to plot and analyze a histogram of the grain distribution by their lateral sizes. Borgardt, N. I. aut Kukin, V. N. aut Kazakov, I. P. aut Enthalten in Journal of surface investigation Moscow : MAIK Nauka/Interperiodics Publ., 2007 16(2022), 4 vom: Aug., Seite 490-496 (DE-627)546007252 (DE-600)2389417-9 1819-7094 nnns volume:16 year:2022 number:4 month:08 pages:490-496 https://dx.doi.org/10.1134/S1027451022040164 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 16 2022 4 08 490-496 |
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Sazonov, V. A. |
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Sazonov, V. A. Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate |
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Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate |
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Sazonov, V. A. Borgardt, N. I. Kukin, V. N. Kazakov, I. P. |
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electron-microscopy study of the grain structure of a low-temperature gaas epitaxial layer grown on si(100) substrate |
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Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate |
| abstract |
Abstract Transmission electron microscopy is used to study the crystalline granular structure of a low-temperature GaAs epitaxial layer grown on a Si(100) substrate. The grain sizes are determined using a series of electron-microscopy images acquired in a small range of tilt angles of a plan-view specimen around the Si[110] and Si[1%$\bar {1}%$0] directions. The grain boundaries can be unambiguously identified by the digital processing of images obtained by bright-field transmission electron microscopy and using electrons scattered at small angles by scanning transmission electron microscopy. The effectiveness of a semi-automated method for detecting grain boundaries is demonstrated; the method is used to plot and analyze a histogram of the grain distribution by their lateral sizes. © Pleiades Publishing, Ltd. 2022. ISSN 1027-4510, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2022, Vol. 16, No. 4, pp. 490–496. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2022, published in Poverkhnost’, 2022, No. 7, pp. 57–64. |
| abstractGer |
Abstract Transmission electron microscopy is used to study the crystalline granular structure of a low-temperature GaAs epitaxial layer grown on a Si(100) substrate. The grain sizes are determined using a series of electron-microscopy images acquired in a small range of tilt angles of a plan-view specimen around the Si[110] and Si[1%$\bar {1}%$0] directions. The grain boundaries can be unambiguously identified by the digital processing of images obtained by bright-field transmission electron microscopy and using electrons scattered at small angles by scanning transmission electron microscopy. The effectiveness of a semi-automated method for detecting grain boundaries is demonstrated; the method is used to plot and analyze a histogram of the grain distribution by their lateral sizes. © Pleiades Publishing, Ltd. 2022. ISSN 1027-4510, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2022, Vol. 16, No. 4, pp. 490–496. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2022, published in Poverkhnost’, 2022, No. 7, pp. 57–64. |
| abstract_unstemmed |
Abstract Transmission electron microscopy is used to study the crystalline granular structure of a low-temperature GaAs epitaxial layer grown on a Si(100) substrate. The grain sizes are determined using a series of electron-microscopy images acquired in a small range of tilt angles of a plan-view specimen around the Si[110] and Si[1%$\bar {1}%$0] directions. The grain boundaries can be unambiguously identified by the digital processing of images obtained by bright-field transmission electron microscopy and using electrons scattered at small angles by scanning transmission electron microscopy. The effectiveness of a semi-automated method for detecting grain boundaries is demonstrated; the method is used to plot and analyze a histogram of the grain distribution by their lateral sizes. © Pleiades Publishing, Ltd. 2022. ISSN 1027-4510, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2022, Vol. 16, No. 4, pp. 490–496. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2022, published in Poverkhnost’, 2022, No. 7, pp. 57–64. |
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Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate |
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A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Ltd. 2022. 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