Synaptic devices based on semiconductor nanocrystals

Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabricatio...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Bu, Mingxuan [verfasserIn] Wang, Yue Yin, Lei Tong, Zhouyu Zhang, Yiqiang Yang, Deren Pi, Xiaodong

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	Semiconductor nanocrystal Synaptic devices Neuromorphic computing

Anmerkung:	© Zhejiang University Press 2022

Übergeordnetes Werk:	Enthalten in: Journal of Zhejiang University - Hangzhou : Zhejiang Univ. Press, 2010, 23(2022), 11 vom: 06. Sept., Seite 1579-1601
Übergeordnetes Werk:	volume:23 ; year:2022 ; number:11 ; day:06 ; month:09 ; pages:1579-1601

Links:	Volltext

DOI / URN:	10.1631/FITEE.2100551

Katalog-ID:	SPR051086328

Internformat


LEADER	01000caa a22002652 4500
001	SPR051086328
003	DE-627
005	20230509114647.0
007	cr uuu---uuuuu
008	230508s2022 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1631/FITEE.2100551 \|2 doi
035			\|a (DE-627)SPR051086328
035			\|a (SPR)FITEE.2100551-e
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
100	1		\|a Bu, Mingxuan \|e verfasserin \|0 (orcid)0000-0001-7929-4870 \|4 aut
245	1	0	\|a Synaptic devices based on semiconductor nanocrystals
264		1	\|c 2022
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
500			\|a © Zhejiang University Press 2022
520			\|a Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs.
650		4	\|a Semiconductor nanocrystal \|7 (dpeaa)DE-He213
650		4	\|a Synaptic devices \|7 (dpeaa)DE-He213
650		4	\|a Neuromorphic computing \|7 (dpeaa)DE-He213
700	1		\|a Wang, Yue \|4 aut
700	1		\|a Yin, Lei \|4 aut
700	1		\|a Tong, Zhouyu \|4 aut
700	1		\|a Zhang, Yiqiang \|4 aut
700	1		\|a Yang, Deren \|4 aut
700	1		\|a Pi, Xiaodong \|0 (orcid)0000-0002-4233-6181 \|4 aut
773	0	8	\|i Enthalten in \|t Journal of Zhejiang University \|d Hangzhou : Zhejiang Univ. Press, 2010 \|g 23(2022), 11 vom: 06. Sept., Seite 1579-1601 \|w (DE-627)618789693 \|w (DE-600)2537865-X \|x 1869-196X \|7 nnns
773	1	8	\|g volume:23 \|g year:2022 \|g number:11 \|g day:06 \|g month:09 \|g pages:1579-1601
856	4	0	\|u https://dx.doi.org/10.1631/FITEE.2100551 \|z lizenzpflichtig \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_SPRINGER
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_121
912			\|a GBV_ILN_138
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_206
912			\|a GBV_ILN_224
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_647
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2018
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2144
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
951			\|a AR
952			\|d 23 \|j 2022 \|e 11 \|b 06 \|c 09 \|h 1579-1601

Indexfelder

author_variant	m b mb y w yw l y ly z t zt y z yz d y dy x p xp
matchkey_str	article:1869196X:2022----::yatceiebsdneiodc
hierarchy_sort_str	2022
publishDate	2022
allfields	10.1631/FITEE.2100551 doi (DE-627)SPR051086328 (SPR)FITEE.2100551-e DE-627 ger DE-627 rakwb eng Bu, Mingxuan verfasserin (orcid)0000-0001-7929-4870 aut Synaptic devices based on semiconductor nanocrystals 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Zhejiang University Press 2022 Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs. Semiconductor nanocrystal (dpeaa)DE-He213 Synaptic devices (dpeaa)DE-He213 Neuromorphic computing (dpeaa)DE-He213 Wang, Yue aut Yin, Lei aut Tong, Zhouyu aut Zhang, Yiqiang aut Yang, Deren aut Pi, Xiaodong (orcid)0000-0002-4233-6181 aut Enthalten in Journal of Zhejiang University Hangzhou : Zhejiang Univ. Press, 2010 23(2022), 11 vom: 06. Sept., Seite 1579-1601 (DE-627)618789693 (DE-600)2537865-X 1869-196X nnns volume:23 year:2022 number:11 day:06 month:09 pages:1579-1601 https://dx.doi.org/10.1631/FITEE.2100551 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 23 2022 11 06 09 1579-1601
spelling	10.1631/FITEE.2100551 doi (DE-627)SPR051086328 (SPR)FITEE.2100551-e DE-627 ger DE-627 rakwb eng Bu, Mingxuan verfasserin (orcid)0000-0001-7929-4870 aut Synaptic devices based on semiconductor nanocrystals 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Zhejiang University Press 2022 Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs. Semiconductor nanocrystal (dpeaa)DE-He213 Synaptic devices (dpeaa)DE-He213 Neuromorphic computing (dpeaa)DE-He213 Wang, Yue aut Yin, Lei aut Tong, Zhouyu aut Zhang, Yiqiang aut Yang, Deren aut Pi, Xiaodong (orcid)0000-0002-4233-6181 aut Enthalten in Journal of Zhejiang University Hangzhou : Zhejiang Univ. Press, 2010 23(2022), 11 vom: 06. Sept., Seite 1579-1601 (DE-627)618789693 (DE-600)2537865-X 1869-196X nnns volume:23 year:2022 number:11 day:06 month:09 pages:1579-1601 https://dx.doi.org/10.1631/FITEE.2100551 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 23 2022 11 06 09 1579-1601
allfields_unstemmed	10.1631/FITEE.2100551 doi (DE-627)SPR051086328 (SPR)FITEE.2100551-e DE-627 ger DE-627 rakwb eng Bu, Mingxuan verfasserin (orcid)0000-0001-7929-4870 aut Synaptic devices based on semiconductor nanocrystals 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Zhejiang University Press 2022 Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs. Semiconductor nanocrystal (dpeaa)DE-He213 Synaptic devices (dpeaa)DE-He213 Neuromorphic computing (dpeaa)DE-He213 Wang, Yue aut Yin, Lei aut Tong, Zhouyu aut Zhang, Yiqiang aut Yang, Deren aut Pi, Xiaodong (orcid)0000-0002-4233-6181 aut Enthalten in Journal of Zhejiang University Hangzhou : Zhejiang Univ. Press, 2010 23(2022), 11 vom: 06. Sept., Seite 1579-1601 (DE-627)618789693 (DE-600)2537865-X 1869-196X nnns volume:23 year:2022 number:11 day:06 month:09 pages:1579-1601 https://dx.doi.org/10.1631/FITEE.2100551 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 23 2022 11 06 09 1579-1601
allfieldsGer	10.1631/FITEE.2100551 doi (DE-627)SPR051086328 (SPR)FITEE.2100551-e DE-627 ger DE-627 rakwb eng Bu, Mingxuan verfasserin (orcid)0000-0001-7929-4870 aut Synaptic devices based on semiconductor nanocrystals 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Zhejiang University Press 2022 Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs. Semiconductor nanocrystal (dpeaa)DE-He213 Synaptic devices (dpeaa)DE-He213 Neuromorphic computing (dpeaa)DE-He213 Wang, Yue aut Yin, Lei aut Tong, Zhouyu aut Zhang, Yiqiang aut Yang, Deren aut Pi, Xiaodong (orcid)0000-0002-4233-6181 aut Enthalten in Journal of Zhejiang University Hangzhou : Zhejiang Univ. Press, 2010 23(2022), 11 vom: 06. Sept., Seite 1579-1601 (DE-627)618789693 (DE-600)2537865-X 1869-196X nnns volume:23 year:2022 number:11 day:06 month:09 pages:1579-1601 https://dx.doi.org/10.1631/FITEE.2100551 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 23 2022 11 06 09 1579-1601
allfieldsSound	10.1631/FITEE.2100551 doi (DE-627)SPR051086328 (SPR)FITEE.2100551-e DE-627 ger DE-627 rakwb eng Bu, Mingxuan verfasserin (orcid)0000-0001-7929-4870 aut Synaptic devices based on semiconductor nanocrystals 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Zhejiang University Press 2022 Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs. Semiconductor nanocrystal (dpeaa)DE-He213 Synaptic devices (dpeaa)DE-He213 Neuromorphic computing (dpeaa)DE-He213 Wang, Yue aut Yin, Lei aut Tong, Zhouyu aut Zhang, Yiqiang aut Yang, Deren aut Pi, Xiaodong (orcid)0000-0002-4233-6181 aut Enthalten in Journal of Zhejiang University Hangzhou : Zhejiang Univ. Press, 2010 23(2022), 11 vom: 06. Sept., Seite 1579-1601 (DE-627)618789693 (DE-600)2537865-X 1869-196X nnns volume:23 year:2022 number:11 day:06 month:09 pages:1579-1601 https://dx.doi.org/10.1631/FITEE.2100551 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 23 2022 11 06 09 1579-1601
language	English
source	Enthalten in Journal of Zhejiang University 23(2022), 11 vom: 06. Sept., Seite 1579-1601 volume:23 year:2022 number:11 day:06 month:09 pages:1579-1601
sourceStr	Enthalten in Journal of Zhejiang University 23(2022), 11 vom: 06. Sept., Seite 1579-1601 volume:23 year:2022 number:11 day:06 month:09 pages:1579-1601
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Semiconductor nanocrystal Synaptic devices Neuromorphic computing
isfreeaccess_bool	false
container_title	Journal of Zhejiang University
authorswithroles_txt_mv	Bu, Mingxuan @@aut@@ Wang, Yue @@aut@@ Yin, Lei @@aut@@ Tong, Zhouyu @@aut@@ Zhang, Yiqiang @@aut@@ Yang, Deren @@aut@@ Pi, Xiaodong @@aut@@
publishDateDaySort_date	2022-09-06T00:00:00Z
hierarchy_top_id	618789693
id	SPR051086328
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR051086328</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230509114647.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230508s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1631/FITEE.2100551</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR051086328</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)FITEE.2100551-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bu, Mingxuan</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0001-7929-4870</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Synaptic devices based on semiconductor nanocrystals</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Zhejiang University Press 2022</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor nanocrystal</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Synaptic devices</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Neuromorphic computing</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Yue</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yin, Lei</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tong, Zhouyu</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Yiqiang</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Deren</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pi, Xiaodong</subfield><subfield code="0">(orcid)0000-0002-4233-6181</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of Zhejiang University</subfield><subfield code="d">Hangzhou : Zhejiang Univ. Press, 2010</subfield><subfield code="g">23(2022), 11 vom: 06. Sept., Seite 1579-1601</subfield><subfield code="w">(DE-627)618789693</subfield><subfield code="w">(DE-600)2537865-X</subfield><subfield code="x">1869-196X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:23</subfield><subfield code="g">year:2022</subfield><subfield code="g">number:11</subfield><subfield code="g">day:06</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:1579-1601</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1631/FITEE.2100551</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_121</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_206</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_647</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2031</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2039</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2116</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2144</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">23</subfield><subfield code="j">2022</subfield><subfield code="e">11</subfield><subfield code="b">06</subfield><subfield code="c">09</subfield><subfield code="h">1579-1601</subfield></datafield></record></collection>
author	Bu, Mingxuan
spellingShingle	Bu, Mingxuan misc Semiconductor nanocrystal misc Synaptic devices misc Neuromorphic computing Synaptic devices based on semiconductor nanocrystals
authorStr	Bu, Mingxuan
ppnlink_with_tag_str_mv	@@773@@(DE-627)618789693
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut
collection	springer
remote_str	true
illustrated	Not Illustrated
issn	1869-196X
topic_title	Synaptic devices based on semiconductor nanocrystals Semiconductor nanocrystal (dpeaa)DE-He213 Synaptic devices (dpeaa)DE-He213 Neuromorphic computing (dpeaa)DE-He213
topic	misc Semiconductor nanocrystal misc Synaptic devices misc Neuromorphic computing
topic_unstemmed	misc Semiconductor nanocrystal misc Synaptic devices misc Neuromorphic computing
topic_browse	misc Semiconductor nanocrystal misc Synaptic devices misc Neuromorphic computing
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Journal of Zhejiang University
hierarchy_parent_id	618789693
hierarchy_top_title	Journal of Zhejiang University
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)618789693 (DE-600)2537865-X
title	Synaptic devices based on semiconductor nanocrystals
ctrlnum	(DE-627)SPR051086328 (SPR)FITEE.2100551-e
title_full	Synaptic devices based on semiconductor nanocrystals
author_sort	Bu, Mingxuan
journal	Journal of Zhejiang University
journalStr	Journal of Zhejiang University
lang_code	eng
isOA_bool	false
recordtype	marc
publishDateSort	2022
contenttype_str_mv	txt
container_start_page	1579
author_browse	Bu, Mingxuan Wang, Yue Yin, Lei Tong, Zhouyu Zhang, Yiqiang Yang, Deren Pi, Xiaodong
container_volume	23
format_se	Elektronische Aufsätze
author-letter	Bu, Mingxuan
doi_str_mv	10.1631/FITEE.2100551
normlink	(ORCID)0000-0001-7929-4870 (ORCID)0000-0002-4233-6181
normlink_prefix_str_mv	(orcid)0000-0001-7929-4870 (orcid)0000-0002-4233-6181
title_sort	synaptic devices based on semiconductor nanocrystals
title_auth	Synaptic devices based on semiconductor nanocrystals
abstract	Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs. © Zhejiang University Press 2022
abstractGer	Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs. © Zhejiang University Press 2022
abstract_unstemmed	Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs. © Zhejiang University Press 2022
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190
container_issue	11
title_short	Synaptic devices based on semiconductor nanocrystals
url	https://dx.doi.org/10.1631/FITEE.2100551
remote_bool	true
author2	Wang, Yue Yin, Lei Tong, Zhouyu Zhang, Yiqiang Yang, Deren Pi, Xiaodong
author2Str	Wang, Yue Yin, Lei Tong, Zhouyu Zhang, Yiqiang Yang, Deren Pi, Xiaodong
ppnlink	618789693
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1631/FITEE.2100551
up_date	2024-07-03T19:41:20.061Z
_version_	1803588133256691712
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR051086328</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230509114647.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230508s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1631/FITEE.2100551</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR051086328</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)FITEE.2100551-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bu, Mingxuan</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0001-7929-4870</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Synaptic devices based on semiconductor nanocrystals</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Zhejiang University Press 2022</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor nanocrystal</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Synaptic devices</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Neuromorphic computing</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Yue</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yin, Lei</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tong, Zhouyu</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Yiqiang</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Deren</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pi, Xiaodong</subfield><subfield code="0">(orcid)0000-0002-4233-6181</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of Zhejiang University</subfield><subfield code="d">Hangzhou : Zhejiang Univ. Press, 2010</subfield><subfield code="g">23(2022), 11 vom: 06. Sept., Seite 1579-1601</subfield><subfield code="w">(DE-627)618789693</subfield><subfield code="w">(DE-600)2537865-X</subfield><subfield code="x">1869-196X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:23</subfield><subfield code="g">year:2022</subfield><subfield code="g">number:11</subfield><subfield code="g">day:06</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:1579-1601</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1631/FITEE.2100551</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_121</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_206</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_647</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2031</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2039</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2116</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2144</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">23</subfield><subfield code="j">2022</subfield><subfield code="e">11</subfield><subfield code="b">06</subfield><subfield code="c">09</subfield><subfield code="h">1579-1601</subfield></datafield></record></collection>
score	7.4005814

Nicht das Richtige dabei?

Schreiben Sie uns!

Synaptic devices based on semiconductor nanocrystals

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?