Dark current modeling of thick perovskite X-ray detectors

Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integratio...
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Autor*in:	Zhao, Shan [verfasserIn] Du, Xinyuan Pang, Jincong Wu, Haodi Song, Zihao Zheng, Zhiping Xu, Ling Tang, Jiang Niu, Guangda

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	Perovskite X-ray detection Dark current Semiconductor simulation Junction device

Anmerkung:	© The Author(s) 2022

Übergeordnetes Werk:	Enthalten in: Frontiers of optoelectronics in China - [Beijing] : Higher Education Press, 2008, 15(2022), 1 vom: 31. Okt.
Übergeordnetes Werk:	volume:15 ; year:2022 ; number:1 ; day:31 ; month:10

Links:	Volltext

DOI / URN:	10.1007/s12200-022-00044-1

Katalog-ID:	SPR051095394

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520			\|a Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as $ 10^{−9} $ A/$ cm^{2} $ for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. Graphical Abstract
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allfields	10.1007/s12200-022-00044-1 doi (DE-627)SPR051095394 (SPR)s12200-022-00044-1-e DE-627 ger DE-627 rakwb eng Zhao, Shan verfasserin aut Dark current modeling of thick perovskite X-ray detectors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2022 Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as $ 10^{−9} $ A/$ cm^{2} $ for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. Graphical Abstract Perovskite (dpeaa)DE-He213 X-ray detection (dpeaa)DE-He213 Dark current (dpeaa)DE-He213 Semiconductor simulation (dpeaa)DE-He213 Junction device (dpeaa)DE-He213 Du, Xinyuan aut Pang, Jincong aut Wu, Haodi aut Song, Zihao aut Zheng, Zhiping aut Xu, Ling aut Tang, Jiang aut Niu, Guangda aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 15(2022), 1 vom: 31. Okt. (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:15 year:2022 number:1 day:31 month:10 https://dx.doi.org/10.1007/s12200-022-00044-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 15 2022 1 31 10
spelling	10.1007/s12200-022-00044-1 doi (DE-627)SPR051095394 (SPR)s12200-022-00044-1-e DE-627 ger DE-627 rakwb eng Zhao, Shan verfasserin aut Dark current modeling of thick perovskite X-ray detectors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2022 Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as $ 10^{−9} $ A/$ cm^{2} $ for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. Graphical Abstract Perovskite (dpeaa)DE-He213 X-ray detection (dpeaa)DE-He213 Dark current (dpeaa)DE-He213 Semiconductor simulation (dpeaa)DE-He213 Junction device (dpeaa)DE-He213 Du, Xinyuan aut Pang, Jincong aut Wu, Haodi aut Song, Zihao aut Zheng, Zhiping aut Xu, Ling aut Tang, Jiang aut Niu, Guangda aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 15(2022), 1 vom: 31. Okt. (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:15 year:2022 number:1 day:31 month:10 https://dx.doi.org/10.1007/s12200-022-00044-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 15 2022 1 31 10
allfields_unstemmed	10.1007/s12200-022-00044-1 doi (DE-627)SPR051095394 (SPR)s12200-022-00044-1-e DE-627 ger DE-627 rakwb eng Zhao, Shan verfasserin aut Dark current modeling of thick perovskite X-ray detectors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2022 Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as $ 10^{−9} $ A/$ cm^{2} $ for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. Graphical Abstract Perovskite (dpeaa)DE-He213 X-ray detection (dpeaa)DE-He213 Dark current (dpeaa)DE-He213 Semiconductor simulation (dpeaa)DE-He213 Junction device (dpeaa)DE-He213 Du, Xinyuan aut Pang, Jincong aut Wu, Haodi aut Song, Zihao aut Zheng, Zhiping aut Xu, Ling aut Tang, Jiang aut Niu, Guangda aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 15(2022), 1 vom: 31. Okt. (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:15 year:2022 number:1 day:31 month:10 https://dx.doi.org/10.1007/s12200-022-00044-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 15 2022 1 31 10
allfieldsGer	10.1007/s12200-022-00044-1 doi (DE-627)SPR051095394 (SPR)s12200-022-00044-1-e DE-627 ger DE-627 rakwb eng Zhao, Shan verfasserin aut Dark current modeling of thick perovskite X-ray detectors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2022 Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as $ 10^{−9} $ A/$ cm^{2} $ for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. Graphical Abstract Perovskite (dpeaa)DE-He213 X-ray detection (dpeaa)DE-He213 Dark current (dpeaa)DE-He213 Semiconductor simulation (dpeaa)DE-He213 Junction device (dpeaa)DE-He213 Du, Xinyuan aut Pang, Jincong aut Wu, Haodi aut Song, Zihao aut Zheng, Zhiping aut Xu, Ling aut Tang, Jiang aut Niu, Guangda aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 15(2022), 1 vom: 31. Okt. (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:15 year:2022 number:1 day:31 month:10 https://dx.doi.org/10.1007/s12200-022-00044-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 15 2022 1 31 10
allfieldsSound	10.1007/s12200-022-00044-1 doi (DE-627)SPR051095394 (SPR)s12200-022-00044-1-e DE-627 ger DE-627 rakwb eng Zhao, Shan verfasserin aut Dark current modeling of thick perovskite X-ray detectors 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2022 Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as $ 10^{−9} $ A/$ cm^{2} $ for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. Graphical Abstract Perovskite (dpeaa)DE-He213 X-ray detection (dpeaa)DE-He213 Dark current (dpeaa)DE-He213 Semiconductor simulation (dpeaa)DE-He213 Junction device (dpeaa)DE-He213 Du, Xinyuan aut Pang, Jincong aut Wu, Haodi aut Song, Zihao aut Zheng, Zhiping aut Xu, Ling aut Tang, Jiang aut Niu, Guangda aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 15(2022), 1 vom: 31. Okt. (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:15 year:2022 number:1 day:31 month:10 https://dx.doi.org/10.1007/s12200-022-00044-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 15 2022 1 31 10
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authorswithroles_txt_mv	Zhao, Shan @@aut@@ Du, Xinyuan @@aut@@ Pang, Jincong @@aut@@ Wu, Haodi @@aut@@ Song, Zihao @@aut@@ Zheng, Zhiping @@aut@@ Xu, Ling @@aut@@ Tang, Jiang @@aut@@ Niu, Guangda @@aut@@
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author	Zhao, Shan
spellingShingle	Zhao, Shan misc Perovskite misc X-ray detection misc Dark current misc Semiconductor simulation misc Junction device Dark current modeling of thick perovskite X-ray detectors
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topic_title	Dark current modeling of thick perovskite X-ray detectors Perovskite (dpeaa)DE-He213 X-ray detection (dpeaa)DE-He213 Dark current (dpeaa)DE-He213 Semiconductor simulation (dpeaa)DE-He213 Junction device (dpeaa)DE-He213
topic	misc Perovskite misc X-ray detection misc Dark current misc Semiconductor simulation misc Junction device
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title	Dark current modeling of thick perovskite X-ray detectors
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title_full	Dark current modeling of thick perovskite X-ray detectors
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author_browse	Zhao, Shan Du, Xinyuan Pang, Jincong Wu, Haodi Song, Zihao Zheng, Zhiping Xu, Ling Tang, Jiang Niu, Guangda
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title_sort	dark current modeling of thick perovskite x-ray detectors
title_auth	Dark current modeling of thick perovskite X-ray detectors
abstract	Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as $ 10^{−9} $ A/$ cm^{2} $ for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. Graphical Abstract © The Author(s) 2022
abstractGer	Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as $ 10^{−9} $ A/$ cm^{2} $ for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. Graphical Abstract © The Author(s) 2022
abstract_unstemmed	Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as $ 10^{−9} $ A/$ cm^{2} $ for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. Graphical Abstract © The Author(s) 2022
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title_short	Dark current modeling of thick perovskite X-ray detectors
url	https://dx.doi.org/10.1007/s12200-022-00044-1
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author2	Du, Xinyuan Pang, Jincong Wu, Haodi Song, Zihao Zheng, Zhiping Xu, Ling Tang, Jiang Niu, Guangda
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up_date	2024-07-03T19:44:56.715Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">SPR051095394</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230508082620.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230508s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12200-022-00044-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR051095394</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s12200-022-00044-1-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhao, Shan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Dark current modeling of thick perovskite X-ray detectors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s) 2022</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as $ 10^{−9} $ A/$ cm^{2} $ for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors. 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Dark current modeling of thick perovskite X-ray detectors

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