Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer

Abstract Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. I...
Ausführliche Beschreibung

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Autor*in:	Chen, Gang [verfasserIn] Lin, Xin Liu, Yuan Wang, Fang Hu, Kai Shan, Xin Wu, ZeYu Zhang, YuPeng Nie, WeiCan Zhong, JiXiang Ren, TianLing Zhang, KaiLiang

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Anmerkung:	© Science China Press 2023

Übergeordnetes Werk:	Enthalten in: Science in China - Heidelberg : Springer, 1997, 66(2023), 6 vom: 24. Apr., Seite 1831-1840
Übergeordnetes Werk:	volume:66 ; year:2023 ; number:6 ; day:24 ; month:04 ; pages:1831-1840

Links:	Volltext

DOI / URN:	10.1007/s11431-022-2330-3

Katalog-ID:	SPR051814552

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520			\|a Abstract Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer $ MoS_{2} $ films with high crystalline quality were prepared by chemical vapor deposition method on $ SiO_{2} $/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin $ Al_{2} %$ O_{3} $ interlayer between the metal electrodes and $ MoS_{2} $ nanosheets. With the addition of an ultrathin 0.8 nm $ Al_{2} %$ O_{3} $ interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the $ Al_{2} %$ O_{3} $ interlayer. At the same time, the switching ratio increased from ∼$ 10^{6} $ to ∼$ 10^{8} $, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin $ Al_{2} %$ O_{3} $ interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with $ Al_{2} %$ O_{3} $ interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices.
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700	1		\|a Shan, Xin \|4 aut
700	1		\|a Wu, ZeYu \|4 aut
700	1		\|a Zhang, YuPeng \|4 aut
700	1		\|a Nie, WeiCan \|4 aut
700	1		\|a Zhong, JiXiang \|4 aut
700	1		\|a Ren, TianLing \|4 aut
700	1		\|a Zhang, KaiLiang \|4 aut
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allfields	10.1007/s11431-022-2330-3 doi (DE-627)SPR051814552 (SPR)s11431-022-2330-3-e DE-627 ger DE-627 rakwb eng Chen, Gang verfasserin aut Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press 2023 Abstract Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer $ MoS_{2} $ films with high crystalline quality were prepared by chemical vapor deposition method on $ SiO_{2} $/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin $ Al_{2} %$ O_{3} $ interlayer between the metal electrodes and $ MoS_{2} $ nanosheets. With the addition of an ultrathin 0.8 nm $ Al_{2} %$ O_{3} $ interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the $ Al_{2} %$ O_{3} $ interlayer. At the same time, the switching ratio increased from ∼$ 10^{6} $ to ∼$ 10^{8} $, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin $ Al_{2} %$ O_{3} $ interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with $ Al_{2} %$ O_{3} $ interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices. Lin, Xin aut Liu, Yuan aut Wang, Fang aut Hu, Kai aut Shan, Xin aut Wu, ZeYu aut Zhang, YuPeng aut Nie, WeiCan aut Zhong, JiXiang aut Ren, TianLing aut Zhang, KaiLiang aut Enthalten in Science in China Heidelberg : Springer, 1997 66(2023), 6 vom: 24. Apr., Seite 1831-1840 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:66 year:2023 number:6 day:24 month:04 pages:1831-1840 https://dx.doi.org/10.1007/s11431-022-2330-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 AR 66 2023 6 24 04 1831-1840
spelling	10.1007/s11431-022-2330-3 doi (DE-627)SPR051814552 (SPR)s11431-022-2330-3-e DE-627 ger DE-627 rakwb eng Chen, Gang verfasserin aut Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press 2023 Abstract Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer $ MoS_{2} $ films with high crystalline quality were prepared by chemical vapor deposition method on $ SiO_{2} $/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin $ Al_{2} %$ O_{3} $ interlayer between the metal electrodes and $ MoS_{2} $ nanosheets. With the addition of an ultrathin 0.8 nm $ Al_{2} %$ O_{3} $ interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the $ Al_{2} %$ O_{3} $ interlayer. At the same time, the switching ratio increased from ∼$ 10^{6} $ to ∼$ 10^{8} $, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin $ Al_{2} %$ O_{3} $ interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with $ Al_{2} %$ O_{3} $ interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices. Lin, Xin aut Liu, Yuan aut Wang, Fang aut Hu, Kai aut Shan, Xin aut Wu, ZeYu aut Zhang, YuPeng aut Nie, WeiCan aut Zhong, JiXiang aut Ren, TianLing aut Zhang, KaiLiang aut Enthalten in Science in China Heidelberg : Springer, 1997 66(2023), 6 vom: 24. Apr., Seite 1831-1840 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:66 year:2023 number:6 day:24 month:04 pages:1831-1840 https://dx.doi.org/10.1007/s11431-022-2330-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 AR 66 2023 6 24 04 1831-1840
allfields_unstemmed	10.1007/s11431-022-2330-3 doi (DE-627)SPR051814552 (SPR)s11431-022-2330-3-e DE-627 ger DE-627 rakwb eng Chen, Gang verfasserin aut Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press 2023 Abstract Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer $ MoS_{2} $ films with high crystalline quality were prepared by chemical vapor deposition method on $ SiO_{2} $/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin $ Al_{2} %$ O_{3} $ interlayer between the metal electrodes and $ MoS_{2} $ nanosheets. With the addition of an ultrathin 0.8 nm $ Al_{2} %$ O_{3} $ interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the $ Al_{2} %$ O_{3} $ interlayer. At the same time, the switching ratio increased from ∼$ 10^{6} $ to ∼$ 10^{8} $, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin $ Al_{2} %$ O_{3} $ interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with $ Al_{2} %$ O_{3} $ interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices. Lin, Xin aut Liu, Yuan aut Wang, Fang aut Hu, Kai aut Shan, Xin aut Wu, ZeYu aut Zhang, YuPeng aut Nie, WeiCan aut Zhong, JiXiang aut Ren, TianLing aut Zhang, KaiLiang aut Enthalten in Science in China Heidelberg : Springer, 1997 66(2023), 6 vom: 24. Apr., Seite 1831-1840 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:66 year:2023 number:6 day:24 month:04 pages:1831-1840 https://dx.doi.org/10.1007/s11431-022-2330-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 AR 66 2023 6 24 04 1831-1840
allfieldsGer	10.1007/s11431-022-2330-3 doi (DE-627)SPR051814552 (SPR)s11431-022-2330-3-e DE-627 ger DE-627 rakwb eng Chen, Gang verfasserin aut Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press 2023 Abstract Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer $ MoS_{2} $ films with high crystalline quality were prepared by chemical vapor deposition method on $ SiO_{2} $/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin $ Al_{2} %$ O_{3} $ interlayer between the metal electrodes and $ MoS_{2} $ nanosheets. With the addition of an ultrathin 0.8 nm $ Al_{2} %$ O_{3} $ interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the $ Al_{2} %$ O_{3} $ interlayer. At the same time, the switching ratio increased from ∼$ 10^{6} $ to ∼$ 10^{8} $, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin $ Al_{2} %$ O_{3} $ interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with $ Al_{2} %$ O_{3} $ interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices. Lin, Xin aut Liu, Yuan aut Wang, Fang aut Hu, Kai aut Shan, Xin aut Wu, ZeYu aut Zhang, YuPeng aut Nie, WeiCan aut Zhong, JiXiang aut Ren, TianLing aut Zhang, KaiLiang aut Enthalten in Science in China Heidelberg : Springer, 1997 66(2023), 6 vom: 24. Apr., Seite 1831-1840 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:66 year:2023 number:6 day:24 month:04 pages:1831-1840 https://dx.doi.org/10.1007/s11431-022-2330-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 AR 66 2023 6 24 04 1831-1840
allfieldsSound	10.1007/s11431-022-2330-3 doi (DE-627)SPR051814552 (SPR)s11431-022-2330-3-e DE-627 ger DE-627 rakwb eng Chen, Gang verfasserin aut Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Science China Press 2023 Abstract Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer $ MoS_{2} $ films with high crystalline quality were prepared by chemical vapor deposition method on $ SiO_{2} $/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin $ Al_{2} %$ O_{3} $ interlayer between the metal electrodes and $ MoS_{2} $ nanosheets. With the addition of an ultrathin 0.8 nm $ Al_{2} %$ O_{3} $ interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the $ Al_{2} %$ O_{3} $ interlayer. At the same time, the switching ratio increased from ∼$ 10^{6} $ to ∼$ 10^{8} $, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin $ Al_{2} %$ O_{3} $ interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with $ Al_{2} %$ O_{3} $ interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices. Lin, Xin aut Liu, Yuan aut Wang, Fang aut Hu, Kai aut Shan, Xin aut Wu, ZeYu aut Zhang, YuPeng aut Nie, WeiCan aut Zhong, JiXiang aut Ren, TianLing aut Zhang, KaiLiang aut Enthalten in Science in China Heidelberg : Springer, 1997 66(2023), 6 vom: 24. Apr., Seite 1831-1840 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:66 year:2023 number:6 day:24 month:04 pages:1831-1840 https://dx.doi.org/10.1007/s11431-022-2330-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 AR 66 2023 6 24 04 1831-1840
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source	Enthalten in Science in China 66(2023), 6 vom: 24. Apr., Seite 1831-1840 volume:66 year:2023 number:6 day:24 month:04 pages:1831-1840
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However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer $ MoS_{2} $ films with high crystalline quality were prepared by chemical vapor deposition method on $ SiO_{2} $/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin $ Al_{2} %$ O_{3} $ interlayer between the metal electrodes and $ MoS_{2} $ nanosheets. With the addition of an ultrathin 0.8 nm $ Al_{2} %$ O_{3} $ interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the $ Al_{2} %$ O_{3} $ interlayer. At the same time, the switching ratio increased from ∼$ 10^{6} $ to ∼$ 10^{8} $, and both the on-current and field-effect mobility were greatly improved. 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author	Chen, Gang
spellingShingle	Chen, Gang Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer
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topic_title	Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer
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title	Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer
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title_full	Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer
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author_browse	Chen, Gang Lin, Xin Liu, Yuan Wang, Fang Hu, Kai Shan, Xin Wu, ZeYu Zhang, YuPeng Nie, WeiCan Zhong, JiXiang Ren, TianLing Zhang, KaiLiang
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doi_str_mv	10.1007/s11431-022-2330-3
title_sort	monolayer $ mos_{2} $-based transistors with low contact resistance by inserting ultrathin $ al_{2} %$ o_{3} $ interfacial layer
title_auth	Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer
abstract	Abstract Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer $ MoS_{2} $ films with high crystalline quality were prepared by chemical vapor deposition method on $ SiO_{2} $/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin $ Al_{2} %$ O_{3} $ interlayer between the metal electrodes and $ MoS_{2} $ nanosheets. With the addition of an ultrathin 0.8 nm $ Al_{2} %$ O_{3} $ interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the $ Al_{2} %$ O_{3} $ interlayer. At the same time, the switching ratio increased from ∼$ 10^{6} $ to ∼$ 10^{8} $, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin $ Al_{2} %$ O_{3} $ interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with $ Al_{2} %$ O_{3} $ interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices. © Science China Press 2023
abstractGer	Abstract Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer $ MoS_{2} $ films with high crystalline quality were prepared by chemical vapor deposition method on $ SiO_{2} $/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin $ Al_{2} %$ O_{3} $ interlayer between the metal electrodes and $ MoS_{2} $ nanosheets. With the addition of an ultrathin 0.8 nm $ Al_{2} %$ O_{3} $ interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the $ Al_{2} %$ O_{3} $ interlayer. At the same time, the switching ratio increased from ∼$ 10^{6} $ to ∼$ 10^{8} $, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin $ Al_{2} %$ O_{3} $ interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with $ Al_{2} %$ O_{3} $ interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices. © Science China Press 2023
abstract_unstemmed	Abstract Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer $ MoS_{2} $ films with high crystalline quality were prepared by chemical vapor deposition method on $ SiO_{2} $/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin $ Al_{2} %$ O_{3} $ interlayer between the metal electrodes and $ MoS_{2} $ nanosheets. With the addition of an ultrathin 0.8 nm $ Al_{2} %$ O_{3} $ interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the $ Al_{2} %$ O_{3} $ interlayer. At the same time, the switching ratio increased from ∼$ 10^{6} $ to ∼$ 10^{8} $, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin $ Al_{2} %$ O_{3} $ interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with $ Al_{2} %$ O_{3} $ interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices. © Science China Press 2023
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title_short	Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer
url	https://dx.doi.org/10.1007/s11431-022-2330-3
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author2	Lin, Xin Liu, Yuan Wang, Fang Hu, Kai Shan, Xin Wu, ZeYu Zhang, YuPeng Nie, WeiCan Zhong, JiXiang Ren, TianLing Zhang, KaiLiang
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We find that the ultrathin $ Al_{2} %$ O_{3} $ interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the $ Al_{2} %$ O_{3} $/$ MoS_{2} $ film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with $ Al_{2} %$ O_{3} $ interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lin, Xin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Yuan</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Fang</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hu, Kai</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shan, Xin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wu, ZeYu</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, YuPeng</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nie, WeiCan</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhong, JiXiang</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ren, TianLing</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, KaiLiang</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Science in China</subfield><subfield code="d">Heidelberg : Springer, 1997</subfield><subfield code="g">66(2023), 6 vom: 24. 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Monolayer $ MoS_{2} $-based transistors with low contact resistance by inserting ultrathin $ Al_{2} %$ O_{3} $ interfacial layer

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