Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes
Abstract Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing $ sp^{2} $ as well as $ sp^{3} $ carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applic...
Ausführliche Beschreibung
Autor*in: |
Li, Jie [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2023 |
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Schlagwörter: |
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Anmerkung: |
© The Korean Institute of Chemical Engineers 2023 |
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Übergeordnetes Werk: |
Enthalten in: The Korean journal of chemical engineering - Seoul : Inst., 1984, 40(2023), 6 vom: 17. Mai, Seite 1268-1276 |
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Übergeordnetes Werk: |
volume:40 ; year:2023 ; number:6 ; day:17 ; month:05 ; pages:1268-1276 |
Links: |
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DOI / URN: |
10.1007/s11814-023-1443-x |
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Katalog-ID: |
SPR051897601 |
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520 | |a Abstract Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing $ sp^{2} $ as well as $ sp^{3} $ carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the $ sp^{2} $/$ sp^{3} $ carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H are investigated and summarized. | ||
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650 | 4 | |a Plasma Characteristics |7 (dpeaa)DE-He213 | |
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10.1007/s11814-023-1443-x doi (DE-627)SPR051897601 (SPR)s11814-023-1443-x-e DE-627 ger DE-627 rakwb eng Li, Jie verfasserin aut Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Korean Institute of Chemical Engineers 2023 Abstract Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing $ sp^{2} $ as well as $ sp^{3} $ carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the $ sp^{2} $/$ sp^{3} $ carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H are investigated and summarized. Hydrogenated Amorphous Carbon (dpeaa)DE-He213 sp (dpeaa)DE-He213 /sp (dpeaa)DE-He213 Ratio (dpeaa)DE-He213 Plasma Deposition (dpeaa)DE-He213 Plasma Characteristics (dpeaa)DE-He213 Chae, Heeyeop aut Enthalten in The Korean journal of chemical engineering Seoul : Inst., 1984 40(2023), 6 vom: 17. Mai, Seite 1268-1276 (DE-627)391337246 (DE-600)2152566-3 1975-7220 nnns volume:40 year:2023 number:6 day:17 month:05 pages:1268-1276 https://dx.doi.org/10.1007/s11814-023-1443-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 40 2023 6 17 05 1268-1276 |
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10.1007/s11814-023-1443-x doi (DE-627)SPR051897601 (SPR)s11814-023-1443-x-e DE-627 ger DE-627 rakwb eng Li, Jie verfasserin aut Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Korean Institute of Chemical Engineers 2023 Abstract Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing $ sp^{2} $ as well as $ sp^{3} $ carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the $ sp^{2} $/$ sp^{3} $ carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H are investigated and summarized. Hydrogenated Amorphous Carbon (dpeaa)DE-He213 sp (dpeaa)DE-He213 /sp (dpeaa)DE-He213 Ratio (dpeaa)DE-He213 Plasma Deposition (dpeaa)DE-He213 Plasma Characteristics (dpeaa)DE-He213 Chae, Heeyeop aut Enthalten in The Korean journal of chemical engineering Seoul : Inst., 1984 40(2023), 6 vom: 17. Mai, Seite 1268-1276 (DE-627)391337246 (DE-600)2152566-3 1975-7220 nnns volume:40 year:2023 number:6 day:17 month:05 pages:1268-1276 https://dx.doi.org/10.1007/s11814-023-1443-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 40 2023 6 17 05 1268-1276 |
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10.1007/s11814-023-1443-x doi (DE-627)SPR051897601 (SPR)s11814-023-1443-x-e DE-627 ger DE-627 rakwb eng Li, Jie verfasserin aut Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Korean Institute of Chemical Engineers 2023 Abstract Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing $ sp^{2} $ as well as $ sp^{3} $ carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the $ sp^{2} $/$ sp^{3} $ carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H are investigated and summarized. Hydrogenated Amorphous Carbon (dpeaa)DE-He213 sp (dpeaa)DE-He213 /sp (dpeaa)DE-He213 Ratio (dpeaa)DE-He213 Plasma Deposition (dpeaa)DE-He213 Plasma Characteristics (dpeaa)DE-He213 Chae, Heeyeop aut Enthalten in The Korean journal of chemical engineering Seoul : Inst., 1984 40(2023), 6 vom: 17. Mai, Seite 1268-1276 (DE-627)391337246 (DE-600)2152566-3 1975-7220 nnns volume:40 year:2023 number:6 day:17 month:05 pages:1268-1276 https://dx.doi.org/10.1007/s11814-023-1443-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 40 2023 6 17 05 1268-1276 |
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10.1007/s11814-023-1443-x doi (DE-627)SPR051897601 (SPR)s11814-023-1443-x-e DE-627 ger DE-627 rakwb eng Li, Jie verfasserin aut Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Korean Institute of Chemical Engineers 2023 Abstract Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing $ sp^{2} $ as well as $ sp^{3} $ carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the $ sp^{2} $/$ sp^{3} $ carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H are investigated and summarized. Hydrogenated Amorphous Carbon (dpeaa)DE-He213 sp (dpeaa)DE-He213 /sp (dpeaa)DE-He213 Ratio (dpeaa)DE-He213 Plasma Deposition (dpeaa)DE-He213 Plasma Characteristics (dpeaa)DE-He213 Chae, Heeyeop aut Enthalten in The Korean journal of chemical engineering Seoul : Inst., 1984 40(2023), 6 vom: 17. Mai, Seite 1268-1276 (DE-627)391337246 (DE-600)2152566-3 1975-7220 nnns volume:40 year:2023 number:6 day:17 month:05 pages:1268-1276 https://dx.doi.org/10.1007/s11814-023-1443-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 40 2023 6 17 05 1268-1276 |
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10.1007/s11814-023-1443-x doi (DE-627)SPR051897601 (SPR)s11814-023-1443-x-e DE-627 ger DE-627 rakwb eng Li, Jie verfasserin aut Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Korean Institute of Chemical Engineers 2023 Abstract Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing $ sp^{2} $ as well as $ sp^{3} $ carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the $ sp^{2} $/$ sp^{3} $ carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H are investigated and summarized. Hydrogenated Amorphous Carbon (dpeaa)DE-He213 sp (dpeaa)DE-He213 /sp (dpeaa)DE-He213 Ratio (dpeaa)DE-He213 Plasma Deposition (dpeaa)DE-He213 Plasma Characteristics (dpeaa)DE-He213 Chae, Heeyeop aut Enthalten in The Korean journal of chemical engineering Seoul : Inst., 1984 40(2023), 6 vom: 17. Mai, Seite 1268-1276 (DE-627)391337246 (DE-600)2152566-3 1975-7220 nnns volume:40 year:2023 number:6 day:17 month:05 pages:1268-1276 https://dx.doi.org/10.1007/s11814-023-1443-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 40 2023 6 17 05 1268-1276 |
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Enthalten in The Korean journal of chemical engineering 40(2023), 6 vom: 17. Mai, Seite 1268-1276 volume:40 year:2023 number:6 day:17 month:05 pages:1268-1276 |
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Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes Hydrogenated Amorphous Carbon (dpeaa)DE-He213 sp (dpeaa)DE-He213 /sp (dpeaa)DE-He213 Ratio (dpeaa)DE-He213 Plasma Deposition (dpeaa)DE-He213 Plasma Characteristics (dpeaa)DE-He213 |
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hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes |
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Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes |
abstract |
Abstract Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing $ sp^{2} $ as well as $ sp^{3} $ carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the $ sp^{2} $/$ sp^{3} $ carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H are investigated and summarized. © The Korean Institute of Chemical Engineers 2023 |
abstractGer |
Abstract Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing $ sp^{2} $ as well as $ sp^{3} $ carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the $ sp^{2} $/$ sp^{3} $ carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H are investigated and summarized. © The Korean Institute of Chemical Engineers 2023 |
abstract_unstemmed |
Abstract Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing $ sp^{2} $ as well as $ sp^{3} $ carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the $ sp^{2} $/$ sp^{3} $ carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the $ sp^{2} $/$ sp^{3} $ ratio of a-C:H are investigated and summarized. © The Korean Institute of Chemical Engineers 2023 |
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Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes |
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