Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers
Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HL...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Nishio, Johji [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2023 |
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| Schlagwörter: |
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| Anmerkung: |
© The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 52(2023), 8 vom: 29. März, Seite 5084-5092 |
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| Übergeordnetes Werk: |
volume:52 ; year:2023 ; number:8 ; day:29 ; month:03 ; pages:5084-5092 |
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| DOI / URN: |
10.1007/s11664-023-10343-8 |
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SPR052158519 |
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| 245 | 1 | 0 | |a Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers |
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| 520 | |a Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type. | ||
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| 650 | 4 | |a partial dislocation |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a photoluminescence imaging |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Ota, Chiharu |0 (orcid)0000-0002-7359-0983 |4 aut | |
| 700 | 1 | |a Iijima, Ryosuke |4 aut | |
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10.1007/s11664-023-10343-8 doi (DE-627)SPR052158519 (SPR)s11664-023-10343-8-e DE-627 ger DE-627 rakwb eng Nishio, Johji verfasserin (orcid)0000-0002-9691-2308 aut Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type. 4H-SiC (dpeaa)DE-He213 forward degradation (dpeaa)DE-He213 single Shockley stacking fault (dpeaa)DE-He213 partial dislocation (dpeaa)DE-He213 photoluminescence imaging (dpeaa)DE-He213 Ota, Chiharu (orcid)0000-0002-7359-0983 aut Iijima, Ryosuke aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 52(2023), 8 vom: 29. März, Seite 5084-5092 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:52 year:2023 number:8 day:29 month:03 pages:5084-5092 https://dx.doi.org/10.1007/s11664-023-10343-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 52 2023 8 29 03 5084-5092 |
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10.1007/s11664-023-10343-8 doi (DE-627)SPR052158519 (SPR)s11664-023-10343-8-e DE-627 ger DE-627 rakwb eng Nishio, Johji verfasserin (orcid)0000-0002-9691-2308 aut Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type. 4H-SiC (dpeaa)DE-He213 forward degradation (dpeaa)DE-He213 single Shockley stacking fault (dpeaa)DE-He213 partial dislocation (dpeaa)DE-He213 photoluminescence imaging (dpeaa)DE-He213 Ota, Chiharu (orcid)0000-0002-7359-0983 aut Iijima, Ryosuke aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 52(2023), 8 vom: 29. März, Seite 5084-5092 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:52 year:2023 number:8 day:29 month:03 pages:5084-5092 https://dx.doi.org/10.1007/s11664-023-10343-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 52 2023 8 29 03 5084-5092 |
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10.1007/s11664-023-10343-8 doi (DE-627)SPR052158519 (SPR)s11664-023-10343-8-e DE-627 ger DE-627 rakwb eng Nishio, Johji verfasserin (orcid)0000-0002-9691-2308 aut Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type. 4H-SiC (dpeaa)DE-He213 forward degradation (dpeaa)DE-He213 single Shockley stacking fault (dpeaa)DE-He213 partial dislocation (dpeaa)DE-He213 photoluminescence imaging (dpeaa)DE-He213 Ota, Chiharu (orcid)0000-0002-7359-0983 aut Iijima, Ryosuke aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 52(2023), 8 vom: 29. März, Seite 5084-5092 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:52 year:2023 number:8 day:29 month:03 pages:5084-5092 https://dx.doi.org/10.1007/s11664-023-10343-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 52 2023 8 29 03 5084-5092 |
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10.1007/s11664-023-10343-8 doi (DE-627)SPR052158519 (SPR)s11664-023-10343-8-e DE-627 ger DE-627 rakwb eng Nishio, Johji verfasserin (orcid)0000-0002-9691-2308 aut Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type. 4H-SiC (dpeaa)DE-He213 forward degradation (dpeaa)DE-He213 single Shockley stacking fault (dpeaa)DE-He213 partial dislocation (dpeaa)DE-He213 photoluminescence imaging (dpeaa)DE-He213 Ota, Chiharu (orcid)0000-0002-7359-0983 aut Iijima, Ryosuke aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 52(2023), 8 vom: 29. März, Seite 5084-5092 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:52 year:2023 number:8 day:29 month:03 pages:5084-5092 https://dx.doi.org/10.1007/s11664-023-10343-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 52 2023 8 29 03 5084-5092 |
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10.1007/s11664-023-10343-8 doi (DE-627)SPR052158519 (SPR)s11664-023-10343-8-e DE-627 ger DE-627 rakwb eng Nishio, Johji verfasserin (orcid)0000-0002-9691-2308 aut Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type. 4H-SiC (dpeaa)DE-He213 forward degradation (dpeaa)DE-He213 single Shockley stacking fault (dpeaa)DE-He213 partial dislocation (dpeaa)DE-He213 photoluminescence imaging (dpeaa)DE-He213 Ota, Chiharu (orcid)0000-0002-7359-0983 aut Iijima, Ryosuke aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 52(2023), 8 vom: 29. März, Seite 5084-5092 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:52 year:2023 number:8 day:29 month:03 pages:5084-5092 https://dx.doi.org/10.1007/s11664-023-10343-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 52 2023 8 29 03 5084-5092 |
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Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. 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Nishio, Johji |
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Nishio, Johji misc 4H-SiC misc forward degradation misc single Shockley stacking fault misc partial dislocation misc photoluminescence imaging Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers |
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Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers 4H-SiC (dpeaa)DE-He213 forward degradation (dpeaa)DE-He213 single Shockley stacking fault (dpeaa)DE-He213 partial dislocation (dpeaa)DE-He213 photoluminescence imaging (dpeaa)DE-He213 |
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Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers |
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Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers |
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contribution of 90° si-core partial dislocation to asymmetric double-rhombic single shockley-type stacking faults in 4h-sic epitaxial layers |
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Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers |
| abstract |
Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type. © The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| abstractGer |
Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type. © The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| abstract_unstemmed |
Abstract The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type. © The Minerals, Metals & Materials Society 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
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Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers |
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https://dx.doi.org/10.1007/s11664-023-10343-8 |
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Ota, Chiharu Iijima, Ryosuke |
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10.1007/s11664-023-10343-8 |
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2024-07-04T01:33:32.358Z |
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| score |
7.402916 |