Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation

The paper focuses on the photoconductive semiconductor switch (PCSS) triggered by the laser diode. The pulse edge of the output voltage of about 760 picoseconds generates nanosecond pulsed laser irradiation (λ = 532 nm) with periodic light distribution.

Gespeichert in:

Autor*in:	Barmin, V. V. [verfasserIn] Puchikin, A. V. Romanchenko, I. V.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	semi-insulating GaAs lock-on effect nanosecond pulse laser trigger high voltage

Anmerkung:	© The Author(s), under exclusive licence to Springer Nature Switzlerland AG 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Übergeordnetes Werk:	Enthalten in: Russian physics journal - New York, NY [u.a.] : Consultants Bureau, 1965, 66(2023), 8 vom: 23. Nov., Seite 875-879
Übergeordnetes Werk:	volume:66 ; year:2023 ; number:8 ; day:23 ; month:11 ; pages:875-879

Links:	Volltext

DOI / URN:	10.1007/s11182-023-03017-9

Katalog-ID:	SPR05399888X

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520			\|a The paper focuses on the photoconductive semiconductor switch (PCSS) triggered by the laser diode. The pulse edge of the output voltage of about 760 picoseconds generates nanosecond pulsed laser irradiation (λ = 532 nm) with periodic light distribution.
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allfields	10.1007/s11182-023-03017-9 doi (DE-627)SPR05399888X (SPR)s11182-023-03017-9-e DE-627 ger DE-627 rakwb eng Barmin, V. V. verfasserin aut Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Nature Switzlerland AG 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. The paper focuses on the photoconductive semiconductor switch (PCSS) triggered by the laser diode. The pulse edge of the output voltage of about 760 picoseconds generates nanosecond pulsed laser irradiation (λ = 532 nm) with periodic light distribution. semi-insulating GaAs (dpeaa)DE-He213 lock-on effect (dpeaa)DE-He213 nanosecond pulse (dpeaa)DE-He213 laser trigger (dpeaa)DE-He213 high voltage (dpeaa)DE-He213 Puchikin, A. V. aut Romanchenko, I. V. aut Enthalten in Russian physics journal New York, NY [u.a.] : Consultants Bureau, 1965 66(2023), 8 vom: 23. Nov., Seite 875-879 (DE-627)325572518 (DE-600)2037572-4 1573-9228 nnns volume:66 year:2023 number:8 day:23 month:11 pages:875-879 https://dx.doi.org/10.1007/s11182-023-03017-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2023 8 23 11 875-879
spelling	10.1007/s11182-023-03017-9 doi (DE-627)SPR05399888X (SPR)s11182-023-03017-9-e DE-627 ger DE-627 rakwb eng Barmin, V. V. verfasserin aut Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Nature Switzlerland AG 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. The paper focuses on the photoconductive semiconductor switch (PCSS) triggered by the laser diode. The pulse edge of the output voltage of about 760 picoseconds generates nanosecond pulsed laser irradiation (λ = 532 nm) with periodic light distribution. semi-insulating GaAs (dpeaa)DE-He213 lock-on effect (dpeaa)DE-He213 nanosecond pulse (dpeaa)DE-He213 laser trigger (dpeaa)DE-He213 high voltage (dpeaa)DE-He213 Puchikin, A. V. aut Romanchenko, I. V. aut Enthalten in Russian physics journal New York, NY [u.a.] : Consultants Bureau, 1965 66(2023), 8 vom: 23. Nov., Seite 875-879 (DE-627)325572518 (DE-600)2037572-4 1573-9228 nnns volume:66 year:2023 number:8 day:23 month:11 pages:875-879 https://dx.doi.org/10.1007/s11182-023-03017-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2023 8 23 11 875-879
allfields_unstemmed	10.1007/s11182-023-03017-9 doi (DE-627)SPR05399888X (SPR)s11182-023-03017-9-e DE-627 ger DE-627 rakwb eng Barmin, V. V. verfasserin aut Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Nature Switzlerland AG 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. The paper focuses on the photoconductive semiconductor switch (PCSS) triggered by the laser diode. The pulse edge of the output voltage of about 760 picoseconds generates nanosecond pulsed laser irradiation (λ = 532 nm) with periodic light distribution. semi-insulating GaAs (dpeaa)DE-He213 lock-on effect (dpeaa)DE-He213 nanosecond pulse (dpeaa)DE-He213 laser trigger (dpeaa)DE-He213 high voltage (dpeaa)DE-He213 Puchikin, A. V. aut Romanchenko, I. V. aut Enthalten in Russian physics journal New York, NY [u.a.] : Consultants Bureau, 1965 66(2023), 8 vom: 23. Nov., Seite 875-879 (DE-627)325572518 (DE-600)2037572-4 1573-9228 nnns volume:66 year:2023 number:8 day:23 month:11 pages:875-879 https://dx.doi.org/10.1007/s11182-023-03017-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2023 8 23 11 875-879
allfieldsGer	10.1007/s11182-023-03017-9 doi (DE-627)SPR05399888X (SPR)s11182-023-03017-9-e DE-627 ger DE-627 rakwb eng Barmin, V. V. verfasserin aut Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Nature Switzlerland AG 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. The paper focuses on the photoconductive semiconductor switch (PCSS) triggered by the laser diode. The pulse edge of the output voltage of about 760 picoseconds generates nanosecond pulsed laser irradiation (λ = 532 nm) with periodic light distribution. semi-insulating GaAs (dpeaa)DE-He213 lock-on effect (dpeaa)DE-He213 nanosecond pulse (dpeaa)DE-He213 laser trigger (dpeaa)DE-He213 high voltage (dpeaa)DE-He213 Puchikin, A. V. aut Romanchenko, I. V. aut Enthalten in Russian physics journal New York, NY [u.a.] : Consultants Bureau, 1965 66(2023), 8 vom: 23. Nov., Seite 875-879 (DE-627)325572518 (DE-600)2037572-4 1573-9228 nnns volume:66 year:2023 number:8 day:23 month:11 pages:875-879 https://dx.doi.org/10.1007/s11182-023-03017-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2023 8 23 11 875-879
allfieldsSound	10.1007/s11182-023-03017-9 doi (DE-627)SPR05399888X (SPR)s11182-023-03017-9-e DE-627 ger DE-627 rakwb eng Barmin, V. V. verfasserin aut Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s), under exclusive licence to Springer Nature Switzlerland AG 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. The paper focuses on the photoconductive semiconductor switch (PCSS) triggered by the laser diode. The pulse edge of the output voltage of about 760 picoseconds generates nanosecond pulsed laser irradiation (λ = 532 nm) with periodic light distribution. semi-insulating GaAs (dpeaa)DE-He213 lock-on effect (dpeaa)DE-He213 nanosecond pulse (dpeaa)DE-He213 laser trigger (dpeaa)DE-He213 high voltage (dpeaa)DE-He213 Puchikin, A. V. aut Romanchenko, I. V. aut Enthalten in Russian physics journal New York, NY [u.a.] : Consultants Bureau, 1965 66(2023), 8 vom: 23. Nov., Seite 875-879 (DE-627)325572518 (DE-600)2037572-4 1573-9228 nnns volume:66 year:2023 number:8 day:23 month:11 pages:875-879 https://dx.doi.org/10.1007/s11182-023-03017-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 66 2023 8 23 11 875-879
language	English
source	Enthalten in Russian physics journal 66(2023), 8 vom: 23. Nov., Seite 875-879 volume:66 year:2023 number:8 day:23 month:11 pages:875-879
sourceStr	Enthalten in Russian physics journal 66(2023), 8 vom: 23. Nov., Seite 875-879 volume:66 year:2023 number:8 day:23 month:11 pages:875-879
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	semi-insulating GaAs lock-on effect nanosecond pulse laser trigger high voltage
isfreeaccess_bool	false
container_title	Russian physics journal
authorswithroles_txt_mv	Barmin, V. V. @@aut@@ Puchikin, A. V. @@aut@@ Romanchenko, I. V. @@aut@@
publishDateDaySort_date	2023-11-23T00:00:00Z
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author	Barmin, V. V.
spellingShingle	Barmin, V. V. misc semi-insulating GaAs misc lock-on effect misc nanosecond pulse misc laser trigger misc high voltage Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation
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topic_title	Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation semi-insulating GaAs (dpeaa)DE-He213 lock-on effect (dpeaa)DE-He213 nanosecond pulse (dpeaa)DE-He213 laser trigger (dpeaa)DE-He213 high voltage (dpeaa)DE-He213
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title	Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation
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title_full	Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation
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author_browse	Barmin, V. V. Puchikin, A. V. Romanchenko, I. V.
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title_sort	photoconductive semiconductor switch behavior in multifilament mode under 532 nm laser irradiation
title_auth	Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation
abstract	The paper focuses on the photoconductive semiconductor switch (PCSS) triggered by the laser diode. The pulse edge of the output voltage of about 760 picoseconds generates nanosecond pulsed laser irradiation (λ = 532 nm) with periodic light distribution. © The Author(s), under exclusive licence to Springer Nature Switzlerland AG 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
abstractGer	The paper focuses on the photoconductive semiconductor switch (PCSS) triggered by the laser diode. The pulse edge of the output voltage of about 760 picoseconds generates nanosecond pulsed laser irradiation (λ = 532 nm) with periodic light distribution. © The Author(s), under exclusive licence to Springer Nature Switzlerland AG 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
abstract_unstemmed	The paper focuses on the photoconductive semiconductor switch (PCSS) triggered by the laser diode. The pulse edge of the output voltage of about 760 picoseconds generates nanosecond pulsed laser irradiation (λ = 532 nm) with periodic light distribution. © The Author(s), under exclusive licence to Springer Nature Switzlerland AG 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
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title_short	Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation
url	https://dx.doi.org/10.1007/s11182-023-03017-9
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up_date	2024-07-03T23:22:11.741Z
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Photoconductive Semiconductor Switch Behavior in Multifilament Mode Under 532 nm Laser Irradiation

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