Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells

Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of n...
Ausführliche Beschreibung

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Autor*in:	Jia, Wenbo [verfasserIn] Jing, Yi Zhang, Han Tian, Baoyan Huang, Huabo Wang, Changlei Xu, Ligang

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Lead-free perovskite solar cells Deep-level traps Power conversion efficiency Semicarbazide hydrochloride Stability

Anmerkung:	© The Author(s) 2023

Übergeordnetes Werk:	Enthalten in: Frontiers of optoelectronics in China - [Beijing] : Higher Education Press, 2008, 16(2023), 1 vom: 29. Dez.
Übergeordnetes Werk:	volume:16 ; year:2023 ; number:1 ; day:29 ; month:12

Links:	Volltext

DOI / URN:	10.1007/s12200-023-00103-1

Katalog-ID:	SPR054200156

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520			\|a Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic $ O_{2} $ molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N–C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device’s operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions. Graphical Abstract
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allfields	10.1007/s12200-023-00103-1 doi (DE-627)SPR054200156 (SPR)s12200-023-00103-1-e DE-627 ger DE-627 rakwb eng Jia, Wenbo verfasserin aut Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2023 Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic $ O_{2} $ molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N–C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device’s operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions. Graphical Abstract Lead-free perovskite solar cells (dpeaa)DE-He213 Deep-level traps (dpeaa)DE-He213 Power conversion efficiency (dpeaa)DE-He213 Semicarbazide hydrochloride (dpeaa)DE-He213 Stability (dpeaa)DE-He213 Jing, Yi aut Zhang, Han aut Tian, Baoyan aut Huang, Huabo aut Wang, Changlei aut Xu, Ligang aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 16(2023), 1 vom: 29. Dez. (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:16 year:2023 number:1 day:29 month:12 https://dx.doi.org/10.1007/s12200-023-00103-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 16 2023 1 29 12
spelling	10.1007/s12200-023-00103-1 doi (DE-627)SPR054200156 (SPR)s12200-023-00103-1-e DE-627 ger DE-627 rakwb eng Jia, Wenbo verfasserin aut Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2023 Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic $ O_{2} $ molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N–C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device’s operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions. Graphical Abstract Lead-free perovskite solar cells (dpeaa)DE-He213 Deep-level traps (dpeaa)DE-He213 Power conversion efficiency (dpeaa)DE-He213 Semicarbazide hydrochloride (dpeaa)DE-He213 Stability (dpeaa)DE-He213 Jing, Yi aut Zhang, Han aut Tian, Baoyan aut Huang, Huabo aut Wang, Changlei aut Xu, Ligang aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 16(2023), 1 vom: 29. Dez. (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:16 year:2023 number:1 day:29 month:12 https://dx.doi.org/10.1007/s12200-023-00103-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 16 2023 1 29 12
allfields_unstemmed	10.1007/s12200-023-00103-1 doi (DE-627)SPR054200156 (SPR)s12200-023-00103-1-e DE-627 ger DE-627 rakwb eng Jia, Wenbo verfasserin aut Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2023 Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic $ O_{2} $ molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N–C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device’s operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions. Graphical Abstract Lead-free perovskite solar cells (dpeaa)DE-He213 Deep-level traps (dpeaa)DE-He213 Power conversion efficiency (dpeaa)DE-He213 Semicarbazide hydrochloride (dpeaa)DE-He213 Stability (dpeaa)DE-He213 Jing, Yi aut Zhang, Han aut Tian, Baoyan aut Huang, Huabo aut Wang, Changlei aut Xu, Ligang aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 16(2023), 1 vom: 29. Dez. (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:16 year:2023 number:1 day:29 month:12 https://dx.doi.org/10.1007/s12200-023-00103-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 16 2023 1 29 12
allfieldsGer	10.1007/s12200-023-00103-1 doi (DE-627)SPR054200156 (SPR)s12200-023-00103-1-e DE-627 ger DE-627 rakwb eng Jia, Wenbo verfasserin aut Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2023 Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic $ O_{2} $ molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N–C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device’s operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions. Graphical Abstract Lead-free perovskite solar cells (dpeaa)DE-He213 Deep-level traps (dpeaa)DE-He213 Power conversion efficiency (dpeaa)DE-He213 Semicarbazide hydrochloride (dpeaa)DE-He213 Stability (dpeaa)DE-He213 Jing, Yi aut Zhang, Han aut Tian, Baoyan aut Huang, Huabo aut Wang, Changlei aut Xu, Ligang aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 16(2023), 1 vom: 29. Dez. (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:16 year:2023 number:1 day:29 month:12 https://dx.doi.org/10.1007/s12200-023-00103-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 16 2023 1 29 12
allfieldsSound	10.1007/s12200-023-00103-1 doi (DE-627)SPR054200156 (SPR)s12200-023-00103-1-e DE-627 ger DE-627 rakwb eng Jia, Wenbo verfasserin aut Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2023 Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic $ O_{2} $ molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N–C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device’s operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions. Graphical Abstract Lead-free perovskite solar cells (dpeaa)DE-He213 Deep-level traps (dpeaa)DE-He213 Power conversion efficiency (dpeaa)DE-He213 Semicarbazide hydrochloride (dpeaa)DE-He213 Stability (dpeaa)DE-He213 Jing, Yi aut Zhang, Han aut Tian, Baoyan aut Huang, Huabo aut Wang, Changlei aut Xu, Ligang aut Enthalten in Frontiers of optoelectronics in China [Beijing] : Higher Education Press, 2008 16(2023), 1 vom: 29. Dez. (DE-627)587886420 (DE-600)2468689-X 1674-4594 nnns volume:16 year:2023 number:1 day:29 month:12 https://dx.doi.org/10.1007/s12200-023-00103-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 AR 16 2023 1 29 12
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author	Jia, Wenbo
spellingShingle	Jia, Wenbo misc Lead-free perovskite solar cells misc Deep-level traps misc Power conversion efficiency misc Semicarbazide hydrochloride misc Stability Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells
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topic_title	Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells Lead-free perovskite solar cells (dpeaa)DE-He213 Deep-level traps (dpeaa)DE-He213 Power conversion efficiency (dpeaa)DE-He213 Semicarbazide hydrochloride (dpeaa)DE-He213 Stability (dpeaa)DE-He213
topic	misc Lead-free perovskite solar cells misc Deep-level traps misc Power conversion efficiency misc Semicarbazide hydrochloride misc Stability
topic_unstemmed	misc Lead-free perovskite solar cells misc Deep-level traps misc Power conversion efficiency misc Semicarbazide hydrochloride misc Stability
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title	Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells
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title_full	Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells
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author_browse	Jia, Wenbo Jing, Yi Zhang, Han Tian, Baoyan Huang, Huabo Wang, Changlei Xu, Ligang
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title_sort	suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells
title_auth	Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells
abstract	Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic $ O_{2} $ molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N–C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device’s operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions. Graphical Abstract © The Author(s) 2023
abstractGer	Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic $ O_{2} $ molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N–C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device’s operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions. Graphical Abstract © The Author(s) 2023
abstract_unstemmed	Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic $ O_{2} $ molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N–C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device’s operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions. Graphical Abstract © The Author(s) 2023
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title_short	Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells
url	https://dx.doi.org/10.1007/s12200-023-00103-1
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">SPR054200156</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231229064640.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">231229s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s12200-023-00103-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR054200156</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s12200-023-00103-1-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jia, Wenbo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Author(s) 2023</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic $ O_{2} $ molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N–C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device’s operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions. Graphical Abstract</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Lead-free perovskite solar cells</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Deep-level traps</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Power conversion efficiency</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semicarbazide hydrochloride</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Stability</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jing, Yi</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Han</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tian, Baoyan</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Huang, Huabo</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Changlei</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Xu, Ligang</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Frontiers of optoelectronics in China</subfield><subfield code="d">[Beijing] : Higher Education Press, 2008</subfield><subfield code="g">16(2023), 1 vom: 29. 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Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells

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