Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators
Abstract Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ramazanoglu, Semih [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2023 |
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| Schlagwörter: |
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| Anmerkung: |
© The Author(s) 2023 |
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| Übergeordnetes Werk: |
Enthalten in: Elektrotechnik und Informationstechnik - Wien [u.a.] : Springer, 1997, 141(2023), 1 vom: 21. Dez., Seite 37-46 |
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| Übergeordnetes Werk: |
volume:141 ; year:2023 ; number:1 ; day:21 ; month:12 ; pages:37-46 |
| Links: |
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| DOI / URN: |
10.1007/s00502-023-01197-3 |
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| Katalog-ID: |
SPR055039766 |
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| 245 | 1 | 0 | |a Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators |
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| 520 | |a Abstract Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% %$\Delta f/f_{\text{mean}}%$ is found in 60% of cells in the array. Further, the capture and emission time constant %$\tau_{e//c}%$ can be extracted from the measurements, the values observed ranging from 0.2 %$\mu%$s to 10 ms. | ||
| 650 | 4 | |a Random telegraph noise |7 (dpeaa)DE-He213 | |
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| 650 | 4 | |a Jitter |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Ring oscillator |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Oxide trap |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Michalowska-Forsyth, Alicja |4 aut | |
| 700 | 1 | |a Deutschmann, Bernd |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Elektrotechnik und Informationstechnik |d Wien [u.a.] : Springer, 1997 |g 141(2023), 1 vom: 21. Dez., Seite 37-46 |w (DE-627)523199740 |w (DE-600)2266983-8 |x 1613-7620 |7 nnns |
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10.1007/s00502-023-01197-3 doi (DE-627)SPR055039766 (SPR)s00502-023-01197-3-e DE-627 ger DE-627 rakwb eng Ramazanoglu, Semih verfasserin (orcid)0000-0002-1553-6567 aut Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2023 Abstract Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% %$\Delta f/f_{\text{mean}}%$ is found in 60% of cells in the array. Further, the capture and emission time constant %$\tau_{e//c}%$ can be extracted from the measurements, the values observed ranging from 0.2 %$\mu%$s to 10 ms. Random telegraph noise (dpeaa)DE-He213 RTN (dpeaa)DE-He213 Jitter (dpeaa)DE-He213 Ring oscillator (dpeaa)DE-He213 Oxide trap (dpeaa)DE-He213 Michalowska-Forsyth, Alicja aut Deutschmann, Bernd aut Enthalten in Elektrotechnik und Informationstechnik Wien [u.a.] : Springer, 1997 141(2023), 1 vom: 21. Dez., Seite 37-46 (DE-627)523199740 (DE-600)2266983-8 1613-7620 nnns volume:141 year:2023 number:1 day:21 month:12 pages:37-46 https://dx.doi.org/10.1007/s00502-023-01197-3 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 141 2023 1 21 12 37-46 |
| spelling |
10.1007/s00502-023-01197-3 doi (DE-627)SPR055039766 (SPR)s00502-023-01197-3-e DE-627 ger DE-627 rakwb eng Ramazanoglu, Semih verfasserin (orcid)0000-0002-1553-6567 aut Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2023 Abstract Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% %$\Delta f/f_{\text{mean}}%$ is found in 60% of cells in the array. Further, the capture and emission time constant %$\tau_{e//c}%$ can be extracted from the measurements, the values observed ranging from 0.2 %$\mu%$s to 10 ms. Random telegraph noise (dpeaa)DE-He213 RTN (dpeaa)DE-He213 Jitter (dpeaa)DE-He213 Ring oscillator (dpeaa)DE-He213 Oxide trap (dpeaa)DE-He213 Michalowska-Forsyth, Alicja aut Deutschmann, Bernd aut Enthalten in Elektrotechnik und Informationstechnik Wien [u.a.] : Springer, 1997 141(2023), 1 vom: 21. Dez., Seite 37-46 (DE-627)523199740 (DE-600)2266983-8 1613-7620 nnns volume:141 year:2023 number:1 day:21 month:12 pages:37-46 https://dx.doi.org/10.1007/s00502-023-01197-3 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 141 2023 1 21 12 37-46 |
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10.1007/s00502-023-01197-3 doi (DE-627)SPR055039766 (SPR)s00502-023-01197-3-e DE-627 ger DE-627 rakwb eng Ramazanoglu, Semih verfasserin (orcid)0000-0002-1553-6567 aut Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2023 Abstract Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% %$\Delta f/f_{\text{mean}}%$ is found in 60% of cells in the array. Further, the capture and emission time constant %$\tau_{e//c}%$ can be extracted from the measurements, the values observed ranging from 0.2 %$\mu%$s to 10 ms. Random telegraph noise (dpeaa)DE-He213 RTN (dpeaa)DE-He213 Jitter (dpeaa)DE-He213 Ring oscillator (dpeaa)DE-He213 Oxide trap (dpeaa)DE-He213 Michalowska-Forsyth, Alicja aut Deutschmann, Bernd aut Enthalten in Elektrotechnik und Informationstechnik Wien [u.a.] : Springer, 1997 141(2023), 1 vom: 21. Dez., Seite 37-46 (DE-627)523199740 (DE-600)2266983-8 1613-7620 nnns volume:141 year:2023 number:1 day:21 month:12 pages:37-46 https://dx.doi.org/10.1007/s00502-023-01197-3 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 141 2023 1 21 12 37-46 |
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10.1007/s00502-023-01197-3 doi (DE-627)SPR055039766 (SPR)s00502-023-01197-3-e DE-627 ger DE-627 rakwb eng Ramazanoglu, Semih verfasserin (orcid)0000-0002-1553-6567 aut Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2023 Abstract Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% %$\Delta f/f_{\text{mean}}%$ is found in 60% of cells in the array. Further, the capture and emission time constant %$\tau_{e//c}%$ can be extracted from the measurements, the values observed ranging from 0.2 %$\mu%$s to 10 ms. Random telegraph noise (dpeaa)DE-He213 RTN (dpeaa)DE-He213 Jitter (dpeaa)DE-He213 Ring oscillator (dpeaa)DE-He213 Oxide trap (dpeaa)DE-He213 Michalowska-Forsyth, Alicja aut Deutschmann, Bernd aut Enthalten in Elektrotechnik und Informationstechnik Wien [u.a.] : Springer, 1997 141(2023), 1 vom: 21. Dez., Seite 37-46 (DE-627)523199740 (DE-600)2266983-8 1613-7620 nnns volume:141 year:2023 number:1 day:21 month:12 pages:37-46 https://dx.doi.org/10.1007/s00502-023-01197-3 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 141 2023 1 21 12 37-46 |
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10.1007/s00502-023-01197-3 doi (DE-627)SPR055039766 (SPR)s00502-023-01197-3-e DE-627 ger DE-627 rakwb eng Ramazanoglu, Semih verfasserin (orcid)0000-0002-1553-6567 aut Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2023 Abstract Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% %$\Delta f/f_{\text{mean}}%$ is found in 60% of cells in the array. Further, the capture and emission time constant %$\tau_{e//c}%$ can be extracted from the measurements, the values observed ranging from 0.2 %$\mu%$s to 10 ms. Random telegraph noise (dpeaa)DE-He213 RTN (dpeaa)DE-He213 Jitter (dpeaa)DE-He213 Ring oscillator (dpeaa)DE-He213 Oxide trap (dpeaa)DE-He213 Michalowska-Forsyth, Alicja aut Deutschmann, Bernd aut Enthalten in Elektrotechnik und Informationstechnik Wien [u.a.] : Springer, 1997 141(2023), 1 vom: 21. Dez., Seite 37-46 (DE-627)523199740 (DE-600)2266983-8 1613-7620 nnns volume:141 year:2023 number:1 day:21 month:12 pages:37-46 https://dx.doi.org/10.1007/s00502-023-01197-3 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 141 2023 1 21 12 37-46 |
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Enthalten in Elektrotechnik und Informationstechnik 141(2023), 1 vom: 21. Dez., Seite 37-46 volume:141 year:2023 number:1 day:21 month:12 pages:37-46 |
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Ramazanoglu, Semih @@aut@@ Michalowska-Forsyth, Alicja @@aut@@ Deutschmann, Bernd @@aut@@ |
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Ramazanoglu, Semih |
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Ramazanoglu, Semih misc Random telegraph noise misc RTN misc Jitter misc Ring oscillator misc Oxide trap Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators |
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Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators Random telegraph noise (dpeaa)DE-He213 RTN (dpeaa)DE-He213 Jitter (dpeaa)DE-He213 Ring oscillator (dpeaa)DE-He213 Oxide trap (dpeaa)DE-He213 |
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Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators |
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Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators |
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Ramazanoglu, Semih |
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bias dependence in statistical random telegraph noise analysis based on nanoscale cmos ring oscillators |
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Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators |
| abstract |
Abstract Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% %$\Delta f/f_{\text{mean}}%$ is found in 60% of cells in the array. Further, the capture and emission time constant %$\tau_{e//c}%$ can be extracted from the measurements, the values observed ranging from 0.2 %$\mu%$s to 10 ms. © The Author(s) 2023 |
| abstractGer |
Abstract Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% %$\Delta f/f_{\text{mean}}%$ is found in 60% of cells in the array. Further, the capture and emission time constant %$\tau_{e//c}%$ can be extracted from the measurements, the values observed ranging from 0.2 %$\mu%$s to 10 ms. © The Author(s) 2023 |
| abstract_unstemmed |
Abstract Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% %$\Delta f/f_{\text{mean}}%$ is found in 60% of cells in the array. Further, the capture and emission time constant %$\tau_{e//c}%$ can be extracted from the measurements, the values observed ranging from 0.2 %$\mu%$s to 10 ms. © The Author(s) 2023 |
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1 |
| title_short |
Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators |
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https://dx.doi.org/10.1007/s00502-023-01197-3 |
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| author2 |
Michalowska-Forsyth, Alicja Deutschmann, Bernd |
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Michalowska-Forsyth, Alicja Deutschmann, Bernd |
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| doi_str |
10.1007/s00502-023-01197-3 |
| up_date |
2024-07-04T03:56:52.829Z |
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