Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment

Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the...
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Autor*in:	Karaseov, P. A. [verfasserIn] Karabeshkin, K. V. Struchkov, A. I. Pechnikov, A. I. Nikolaev, V. I. Andreeva, V. D. Titov, A. I.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Anmerkung:	© Pleiades Publishing, Ltd. 2023. ISSN 1063-7826, Semiconductors, 2023, Vol. 57, No. 10, pp. 459–464. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 9, pp. 882–887. English Text © Ioffe Institute, 2022.

Übergeordnetes Werk:	Enthalten in: Semiconductors - Pleiades Publishing, 1997, 57(2023), 10 vom: Okt., Seite 459-464
Übergeordnetes Werk:	volume:57 ; year:2023 ; number:10 ; month:10 ; pages:459-464

Links:	Volltext

DOI / URN:	10.1134/S1063782623070102

Katalog-ID:	SPR055146236

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520			\|a Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under $ PF_{4} $ ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable α-. Mechanisms of damage formation in these polymorphs are different.
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700	1		\|a Titov, A. I. \|4 aut
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allfields	10.1134/S1063782623070102 doi (DE-627)SPR055146236 (SPR)S1063782623070102-e DE-627 ger DE-627 rakwb eng 530 VZ 53.00 bkl 33.00 bkl Karaseov, P. A. verfasserin aut Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7826, Semiconductors, 2023, Vol. 57, No. 10, pp. 459–464. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 9, pp. 882–887. English Text © Ioffe Institute, 2022. Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under $ PF_{4} $ ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable α-. Mechanisms of damage formation in these polymorphs are different. Karabeshkin, K. V. aut Struchkov, A. I. aut Pechnikov, A. I. aut Nikolaev, V. I. aut Andreeva, V. D. aut Titov, A. I. aut Enthalten in Semiconductors Pleiades Publishing, 1997 57(2023), 10 vom: Okt., Seite 459-464 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:57 year:2023 number:10 month:10 pages:459-464 https://dx.doi.org/10.1134/S1063782623070102 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 VZ 33.00 VZ AR 57 2023 10 10 459-464
spelling	10.1134/S1063782623070102 doi (DE-627)SPR055146236 (SPR)S1063782623070102-e DE-627 ger DE-627 rakwb eng 530 VZ 53.00 bkl 33.00 bkl Karaseov, P. A. verfasserin aut Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7826, Semiconductors, 2023, Vol. 57, No. 10, pp. 459–464. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 9, pp. 882–887. English Text © Ioffe Institute, 2022. Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under $ PF_{4} $ ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable α-. Mechanisms of damage formation in these polymorphs are different. Karabeshkin, K. V. aut Struchkov, A. I. aut Pechnikov, A. I. aut Nikolaev, V. I. aut Andreeva, V. D. aut Titov, A. I. aut Enthalten in Semiconductors Pleiades Publishing, 1997 57(2023), 10 vom: Okt., Seite 459-464 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:57 year:2023 number:10 month:10 pages:459-464 https://dx.doi.org/10.1134/S1063782623070102 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 VZ 33.00 VZ AR 57 2023 10 10 459-464
allfields_unstemmed	10.1134/S1063782623070102 doi (DE-627)SPR055146236 (SPR)S1063782623070102-e DE-627 ger DE-627 rakwb eng 530 VZ 53.00 bkl 33.00 bkl Karaseov, P. A. verfasserin aut Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7826, Semiconductors, 2023, Vol. 57, No. 10, pp. 459–464. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 9, pp. 882–887. English Text © Ioffe Institute, 2022. Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under $ PF_{4} $ ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable α-. Mechanisms of damage formation in these polymorphs are different. Karabeshkin, K. V. aut Struchkov, A. I. aut Pechnikov, A. I. aut Nikolaev, V. I. aut Andreeva, V. D. aut Titov, A. I. aut Enthalten in Semiconductors Pleiades Publishing, 1997 57(2023), 10 vom: Okt., Seite 459-464 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:57 year:2023 number:10 month:10 pages:459-464 https://dx.doi.org/10.1134/S1063782623070102 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 VZ 33.00 VZ AR 57 2023 10 10 459-464
allfieldsGer	10.1134/S1063782623070102 doi (DE-627)SPR055146236 (SPR)S1063782623070102-e DE-627 ger DE-627 rakwb eng 530 VZ 53.00 bkl 33.00 bkl Karaseov, P. A. verfasserin aut Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7826, Semiconductors, 2023, Vol. 57, No. 10, pp. 459–464. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 9, pp. 882–887. English Text © Ioffe Institute, 2022. Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under $ PF_{4} $ ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable α-. Mechanisms of damage formation in these polymorphs are different. Karabeshkin, K. V. aut Struchkov, A. I. aut Pechnikov, A. I. aut Nikolaev, V. I. aut Andreeva, V. D. aut Titov, A. I. aut Enthalten in Semiconductors Pleiades Publishing, 1997 57(2023), 10 vom: Okt., Seite 459-464 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:57 year:2023 number:10 month:10 pages:459-464 https://dx.doi.org/10.1134/S1063782623070102 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 VZ 33.00 VZ AR 57 2023 10 10 459-464
allfieldsSound	10.1134/S1063782623070102 doi (DE-627)SPR055146236 (SPR)S1063782623070102-e DE-627 ger DE-627 rakwb eng 530 VZ 53.00 bkl 33.00 bkl Karaseov, P. A. verfasserin aut Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7826, Semiconductors, 2023, Vol. 57, No. 10, pp. 459–464. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 9, pp. 882–887. English Text © Ioffe Institute, 2022. Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under $ PF_{4} $ ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable α-. Mechanisms of damage formation in these polymorphs are different. Karabeshkin, K. V. aut Struchkov, A. I. aut Pechnikov, A. I. aut Nikolaev, V. I. aut Andreeva, V. D. aut Titov, A. I. aut Enthalten in Semiconductors Pleiades Publishing, 1997 57(2023), 10 vom: Okt., Seite 459-464 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:57 year:2023 number:10 month:10 pages:459-464 https://dx.doi.org/10.1134/S1063782623070102 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 VZ 33.00 VZ AR 57 2023 10 10 459-464
language	English
source	Enthalten in Semiconductors 57(2023), 10 vom: Okt., Seite 459-464 volume:57 year:2023 number:10 month:10 pages:459-464
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authorswithroles_txt_mv	Karaseov, P. A. @@aut@@ Karabeshkin, K. V. @@aut@@ Struchkov, A. I. @@aut@@ Pechnikov, A. I. @@aut@@ Nikolaev, V. I. @@aut@@ Andreeva, V. D. @@aut@@ Titov, A. I. @@aut@@
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A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Ltd. 2023. ISSN 1063-7826, Semiconductors, 2023, Vol. 57, No. 10, pp. 459–464. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 9, pp. 882–887. English Text © Ioffe Institute, 2022.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under $ PF_{4} $ ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. 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author	Karaseov, P. A.
spellingShingle	Karaseov, P. A. ddc 530 bkl 53.00 bkl 33.00 Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment
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title	Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment
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title_full	Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment
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title_sort	radiation damage accumulation in α-$ ga_{2} $$ o_{3} $ under p and $ pf_{4} $ ion bombardment
title_auth	Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment
abstract	Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under $ PF_{4} $ ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable α-. Mechanisms of damage formation in these polymorphs are different. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7826, Semiconductors, 2023, Vol. 57, No. 10, pp. 459–464. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 9, pp. 882–887. English Text © Ioffe Institute, 2022.
abstractGer	Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under $ PF_{4} $ ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable α-. Mechanisms of damage formation in these polymorphs are different. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7826, Semiconductors, 2023, Vol. 57, No. 10, pp. 459–464. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 9, pp. 882–887. English Text © Ioffe Institute, 2022.
abstract_unstemmed	Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-$ Ga_{2} $$ O_{3} $) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular $ PF_{4} $ ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under $ PF_{4} $ ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable α-. Mechanisms of damage formation in these polymorphs are different. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7826, Semiconductors, 2023, Vol. 57, No. 10, pp. 459–464. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Fizika i Tekhnika Poluprovodnikov, 2022, Vol. 56, No. 9, pp. 882–887. English Text © Ioffe Institute, 2022.
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container_issue	10
title_short	Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment
url	https://dx.doi.org/10.1134/S1063782623070102
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author2	Karabeshkin, K. V. Struchkov, A. I. Pechnikov, A. I. Nikolaev, V. I. Andreeva, V. D. Titov, A. I.
author2Str	Karabeshkin, K. V. Struchkov, A. I. Pechnikov, A. I. Nikolaev, V. I. Andreeva, V. D. Titov, A. I.
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doi_str	10.1134/S1063782623070102
up_date	2024-07-03T13:40:27.255Z
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Radiation Damage Accumulation in α-$ Ga_{2} $$ O_{3} $ under P and $ PF_{4} $ Ion Bombardment

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