Defect Structure of α-$ Ga_{2} $$ O_{3} $ Film Grown on a m-face Sapphire Substrate, According to Transmission Electron Microscopy Investigation

Abstract The results of a study by transmission electron microscopy of the structural state of α-$ Ga_{2} $$ O_{3} $ film with a thickness of about 1 micron, grown on the prismatic m-face sapphire by the method of chloride vapor phase epitaxy, are presented. The influence of the substrate orientatio...
Ausführliche Beschreibung

Gespeichert in:
Autor*in:

Myasoedov, A. V. [verfasserIn]

Pavlov, I. S.

Pechnikov, A. I.

Stepanov, S. I.

Nikolaev, V. I.

Format:

E-Artikel

Sprache:

Englisch

Erschienen:

2023

Anmerkung:

© Pleiades Publishing, Ltd. 2023. ISSN 1063-7850, Technical Physics Letters, 2023, Vol. 49, Suppl. 2, pp. S90–S93. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2023, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2023, Vol. 49, No. 2, pp. 26–29. English Text © Ioffe Institute, 2023.

Übergeordnetes Werk:

Enthalten in: Technical physics letters - Pleiades Publishing, 1993, 49(2023), Suppl 2 vom: Dez., Seite S90-S93

Übergeordnetes Werk:

volume:49 ; year:2023 ; number:Suppl 2 ; month:12 ; pages:S90-S93

Links:

Volltext

DOI / URN:

10.1134/S1063785023900455

Katalog-ID:

SPR055146589

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